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1. 发明授权

US3968019A Method of manufacturing low power loss semiconductor device 失效
标题翻译：制造低功耗半导体器件的方法
公开(公告)号：US3968019A
公开(公告)日：1976-07-06
申请号：US560880
申请日：1975-03-21
申请人： Masanobu Hanazono , Osamu Asai , Moriaki Fuyama , Masao Iimura , Hideyuki Yagi , Masahiro Okamura
发明人： Masanobu Hanazono , Osamu Asai , Moriaki Fuyama , Masao Iimura , Hideyuki Yagi , Masahiro Okamura
IPC分类号： H01L29/872 , H01L21/00 , H01L21/263 , H01L29/00 , H01L29/47 , C23C15/00 , H01L29/48
CPC分类号： H01L21/00 , H01L21/2633 , H01L29/00
摘要： By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.
摘要翻译：通过在充分清洁的半导体衬底上通过离子电镀形成金属涂层，获得了与具有扩散结的普通半导体器件不同的低功率损耗和高开关速度的半导体器件。在金属涂层和半导体衬底之间的界面中，向半导体衬底形成相当薄的金属注入层。肖特基势垒器件可以通过本发明的方法形成。

2. 发明授权

US08872127B2 Beam current controller for laser ion source 有权
标题翻译：光束电流控制器用于激光离子源
公开(公告)号：US08872127B2
公开(公告)日：2014-10-28
申请号：US13398553
申请日：2012-02-16
申请人： Masahiro Okamura
发明人： Masahiro Okamura
IPC分类号： H01J27/24 , H05H1/10 , A61N5/10 , H05H7/08
CPC分类号： H01J27/24 , A61N5/10 , A61N2005/1074 , A61N2005/1088 , H05H2007/082
摘要： The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.
摘要翻译：本发明涉及具有用于实验和药用目的的快速束流控制器的离子源的设计和使用。更具体地，本发明涉及具有施加磁场的激光离子源的设计和使用，以限制由激光烧蚀引起的等离子体通量。

3. 发明授权

US06310582B1 Antenna system 失效
标题翻译：天线系统
公开(公告)号：US06310582B1
公开(公告)日：2001-10-30
申请号：US09493658
申请日：2000-01-28
申请人： Tatsuya Uetake , Masahiro Okamura , Midori Taira , Akito Kobayashi , Ken Satou
发明人： Tatsuya Uetake , Masahiro Okamura , Midori Taira , Akito Kobayashi , Ken Satou
IPC分类号： H01A300
CPC分类号： H01Q21/28 , H01Q1/125 , H01Q3/08
摘要： When communication is performed simultaneously with two moving bodies such as a satellite, an antenna construction in which a plurality of antennas do not become an obstacle to each other's communication and the direction (the azimuth angle and the elevation angle) adjusting mechanism thereof can be realized with a simple construction. The two antennas have another movable portion (a rotation mechanism with respect to the axis) independently, while sharing the direction adjusting mechanism for the azimuth angle and the elevation angle. The rotation axis of the rotation mechanism of each antenna faces the same direction on the same plane, and each rotation mechanism is separately arranged in an area defined by a plane obtained by extending the axis of the azimuth angle adjusting mechanism toward the axial direction of the elevation angle adjusting mechanism. The azimuth angle and the elevation angle of respective antennas can be separately adjusted by the rotation mechanism with respect to the axis, hence the antennas can be directed to the communication targets existing in the two different directions simultaneously from the reception point.
摘要翻译：当与诸如卫星的两个移动体同时进行通信时，可以实现多个天线不会成为彼此通信的障碍物的天线结构以及其方向（方位角和仰角）调节机构施工简单。两个天线独立地具有另一个可移动部分（相对于轴线的旋转机构），同时共享用于方位角和仰角的方向调节机构。每个天线的旋转机构的旋转轴线在相同的平面上面向相同的方向，并且每个旋转机构分开布置在由通过使方位角调节机构的轴线朝向轴向方向延伸而获得的平面所限定的区域中仰角调整机构。可以通过旋转机构相对于轴分别调整各个天线的方位角和仰角，从而可以从接收点同时将天线指向存在于两个不同方向上的通信对象。

4. 发明授权

US4210464A Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers 失效
标题翻译：通过钝化玻璃层通过热电子照射同时控制半导体器件寿命和漏电流的方法
公开(公告)号：US4210464A
公开(公告)日：1980-07-01
申请号：US873774
申请日：1978-01-31
申请人： Tomoyuki Tanaka , Masahiro Okamura , Toshikatsu Shirasawa , Takuzo Ogawa
发明人： Tomoyuki Tanaka , Masahiro Okamura , Toshikatsu Shirasawa , Takuzo Ogawa
IPC分类号： H01L29/73 , H01L21/26 , H01L21/263 , H01L21/322 , H01L21/331 , H01L21/56 , H01L23/31 , H01L29/74 , H01L29/861 , C03C3/04
CPC分类号： H01L24/01 , H01L21/26 , H01L21/263 , H01L21/56 , H01L23/3171 , H01L23/3178 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/0103 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10253 , H01L2924/12036 , H01L2924/1301 , H01L2924/3025
摘要： The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.
摘要翻译：以绝缘玻璃覆盖的其pn结露出端的半导体器件的整个体，由于电子束的能量减少而被照射到具有高于0.5MeV的能量的辐射，同时半导体器件保持在更高的温度超过300℃，优选高于350℃。结果，半导体器件中的少数载流子的寿命可以缩短，而不会增加相反方向的泄漏电流。

5. 发明申请

US20120211668A1 Beam Current Controller for Laser Ion Source 有权
标题翻译：光束电流控制器用于激光离子源
公开(公告)号：US20120211668A1
公开(公告)日：2012-08-23
申请号：US13398553
申请日：2012-02-16
申请人： Masahiro Okamura
发明人： Masahiro Okamura
IPC分类号： H01J27/24 , H01J3/26
CPC分类号： H01J27/24 , A61N5/10 , A61N2005/1074 , A61N2005/1088 , H05H2007/082
摘要： The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.
摘要翻译：本发明涉及具有用于实验和医疗目的的快速束流控制器的离子源的设计和使用。更具体地，本发明涉及具有施加磁场的激光离子源的设计和使用，以限制由激光烧蚀引起的等离子体通量。

6. 发明授权

US07043440B2 Play back apparatus 失效
标题翻译：播放设备
公开(公告)号：US07043440B2
公开(公告)日：2006-05-09
申请号：US09829988
申请日：2001-04-11
申请人： Takehiko Shioda , Masami Suzuki , Satoshi Odagawa , Takayuki Akimoto , Masahiro Okamura , Yasuteru Kodama , Manabu Nohara , Katsunori Arakawa , Osamu Yamazaki , Hiroto Inoue
发明人： Takehiko Shioda , Masami Suzuki , Satoshi Odagawa , Takayuki Akimoto , Masahiro Okamura , Yasuteru Kodama , Manabu Nohara , Katsunori Arakawa , Osamu Yamazaki , Hiroto Inoue
IPC分类号： G10L19/00
CPC分类号： G11B20/10527 , G11B20/00007 , G11B27/005 , G11B2020/1062 , G11B2220/61
摘要： When the quick traverse play back command (or, quick returning play back command) of the audio information by the compression audio information is given to the play back apparatus, by the control of the control section, the special audio according to the temporarily stored data stored in the first storage means is repeatedly played back, instead of the play back of the audio by the ordinary play back operation.
摘要翻译：当通过压缩音频信息将音频信息的快速往复播放命令（或快速返回播放命令）提供给播放设备时，通过控制部分的控制，根据临时存储的数据存储在第一存储装置中的是重复播放的，而不是通过普通的回放操作播放音频。

7. 发明授权

US06744225B2 Ion accelerator 失效
标题翻译：离子加速器
公开(公告)号：US06744225B2
公开(公告)日：2004-06-01
申请号：US10135426
申请日：2002-05-01
申请人： Masahiro Okamura , Takeshi Takeuchi , Toshiyuki Hattori
发明人： Masahiro Okamura , Takeshi Takeuchi , Toshiyuki Hattori
IPC分类号： H05H900
CPC分类号： H05H9/00
摘要： The present invention mainly relates to an ion accelerator with significantly simplified construction, for accelerating an much larger amount of ions, wherein that a plasma-generating target 12, a vacuum chamber 16 for extracting ions from plasma generated from the plasma-generating target 12, and an ion linac 30 are connected in series, the vacuum chamber 16 is installed near an ion entrance of the ion linac 30, the ion accelerator also has a high voltage power supply boosting the vacuum chamber 16 to a desired voltage, and ions are directly injected from the vacuum chamber 16 to the ion linac 30. In addition, so as to improve the above-described ion accelerator 20, to greatly simplifying construction, to efficiently extracting all the ions included in accelerable plasma that is generated, and to be able to accelerate an ion beam with large pulse width, an ion accelerator has the construction that a plasma-generating target 112 for generating plasma by radiating a plasma generating laser L, a vacuum chamber 116 that extracts ions from plasma generated in the plasma-generating target 112 and is directly installed in an ion entrance 138 of an ionic linac 130, and an ion linac 130 are serially connected so that ions may be directly injected into the ion linac 130 by using the diffusion velocity of the plasma.
摘要翻译：本发明主要涉及离子加速器，其结构大大简化，用于加速大量离子，其中等离子体产生靶12，用于从等离子体产生靶12产生的等离子体中提取离子的真空室16，并且离子线性加速器30串联连接，真空室16安装在离子线性加速器30的离子入口附近，离子加速器还具有将真空室16升压至期望电压的高压电源，并且离子直接从真空室16喷射到离子线性加速器30.此外，为了改善上述离子加速器20，为了大大简化结构，有效地提取生成的可加速等离子体中包含的所有离子，并且能够为了加速具有大脉冲宽度的离子束，离子加速器具有这样的结构：等离子体产生靶112用于通过辐射等离子体产生的拉伸呃L，一个真空室116，它从在等离子体产生靶112中产生的等离子体中提取离子，并且直接安装在离子线性加速器130的离子入口138中，并且离子线性加速器130串联连接，使得离子可以被直接注入通过使用等离子体的扩散速度进入离子线性加速器130。

8. 发明授权

US5504187A Polymer granules containing little residual solvent 失效
标题翻译：含有少量残留溶剂的聚合物颗粒
公开(公告)号：US5504187A
公开(公告)日：1996-04-02
申请号：US279845
申请日：1994-07-26
申请人： Noriyuki Kunishi , Masahiro Okamura , Takashi Tsukahara , Masahiro Takahashi
发明人： Noriyuki Kunishi , Masahiro Okamura , Takashi Tsukahara , Masahiro Takahashi
IPC分类号： C08J3/14 , C08J3/16 , C08F6/00
CPC分类号： C08J3/14 , C08J2369/00 , Y10T428/2982
摘要： Granules collected from a solution of a polycarbonate, an integrated structure of independent fine particles constituting the granules being formed at least on the surfaces of the granules; and a process for preparing the granules of the polycarbonate which comprises the steps of adding a poor solvent to the polycarbonate solution, and then agitation-granulating fine particles of the polycarbonate into the granules, while stirring involving a shear force-imparting function is carried out under heating. According to the present invention, the polycarbonate or the like can be collected from its organic solvent solution as the granules having good drying properties.
摘要翻译：从聚碳酸酯溶液收集的颗粒，至少在颗粒表面上形成构成颗粒的独立细颗粒的整体结构; 以及制备聚碳酸酯颗粒的方法，该方法包括以下步骤：向聚碳酸酯溶液中加入不良溶剂，然后在进行涉及剪切力赋予功能的搅拌下，将聚碳酸酯的细颗粒搅拌成颗粒。在加热。根据本发明，作为具有良好干燥性能的颗粒，可以从其有机溶剂溶液中收集聚碳酸酯等。

9. 发明授权

US4223328A Field controlled thyristor with dual resistivity field layer 失效
标题翻译：具有双电阻率场层的场控晶闸管
公开(公告)号：US4223328A
公开(公告)日：1980-09-16
申请号：US911311
申请日：1978-06-01
申请人： Yoshio Terasawa , Kenji Miyata , Masayoshi Naito , Takuzo Ogawa , Masahiro Okamura
发明人： Yoshio Terasawa , Kenji Miyata , Masayoshi Naito , Takuzo Ogawa , Masahiro Okamura
IPC分类号： H01L29/80 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/74 , H01L29/744
CPC分类号： H01L29/744 , H01L29/0834 , H01L29/1066 , H01L29/167
摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.
摘要翻译：公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域，连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高到基地区。场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

10. 发明授权

US4201598A Electron irradiation process of glass passivated semiconductor devices for improved reverse characteristics 失效
标题翻译：用于改善反向特性的玻璃钝化半导体器件的电子辐射过程
公开(公告)号：US4201598A
公开(公告)日：1980-05-06
申请号：US820698
申请日：1977-08-01
申请人： Tomoyuki Tanaka , Toshikatsu Shirasawa , Masahiro Okamura
发明人： Tomoyuki Tanaka , Toshikatsu Shirasawa , Masahiro Okamura
IPC分类号： H01L29/73 , H01L21/263 , H01L21/322 , H01L21/331 , H01L21/56 , H01L23/29 , H01L23/31 , H01L29/744 , H01L29/861 , H01L7/54
CPC分类号： H01L21/263 , H01L21/56 , H01L23/291 , H01L23/3107 , H01L23/3171 , H01L2924/0002 , Y10S438/904
摘要： Semiconductor devices with improved reverse characteristics are obtained by exposing the semiconductor bodies of the devices that are passivated by alkali-free glasses to a high energy radiation such as an electron radiation so as to shorten a life time of the bodies down to a predetermined value, while increasing the reverse leakage current of the bodies, and by subjecting the irradiated semiconductor bodies to an annealing treatment at a temperature of 250.degree. to 350.degree. C. for a sufficient time so as to decrease the reverse leakage current down to a predetermined value, while maintaining the order of the shortened life time.
摘要翻译：具有改进的反向特性的半导体器件通过将被无碱玻璃钝化的器件的半导体本体暴露于诸如电子辐射的高能量辐射来获得，以便将物体的寿命缩短到预定值，同时增加体的反向泄漏电流，并且通过在250〜350℃的温度下对照射的半导体体进行退火处理足够的时间，以将反向泄漏电流降低到预定值，同时保持缩短生命周期的顺序。

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