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1. 发明授权

US4699150A Ultrasonic transducer assembly for medical diagnostic examinations 失效
标题翻译：用于医学诊断检查的超声波换能器组件
公开(公告)号：US4699150A
公开(公告)日：1987-10-13
申请号：US864563
申请日：1986-05-16
申请人： Masami Kawabuchi , Koji Matsuo , Fumio Muramatsu , Akira Fukumoto , Koetsu Saito
发明人： Masami Kawabuchi , Koji Matsuo , Fumio Muramatsu , Akira Fukumoto , Koetsu Saito
IPC分类号： A61B8/00 , G01N29/04 , G01N29/24 , G10K11/02 , G10K11/30 , H04R17/00 , A61B10/00
CPC分类号： G10K11/02 , G10K11/30
摘要： An ultrasonic transducer for medical diagnostic examinations which comprises a transducer element having one surface through ultrasonic waves are emitted, an acoustic impedance matcher, and a contact member brought to contact with an object being examined and formed on the one surface of the ultrasonic transducer element. The contact member includes at least a flat plate or an acoustic lens made of a-4-methylpentene-1-base polymer which has high mechanical strength. Transducer arrays and assemblies using such polymer as a member directly contacted with human body are also described.
摘要翻译：发射用于医疗诊断检查的超声波换能器，其包括具有通过超声波的一个表面的换能器元件，声阻抗匹配器和与被检查物体接触并且形成在超声换能器元件的一个表面上的接触构件。接触构件至少包括具有高机械强度的由4-甲基戊烯-1-基聚合物制成的平板或声透镜。还描述了使用这种聚合物作为与人体直接接触的部件的传感器阵列和组件。

2. 发明授权

US4101795A Ultrasonic probe 失效
标题翻译：超声探头
公开(公告)号：US4101795A
公开(公告)日：1978-07-18
申请号：US807600
申请日：1977-06-17
申请人： Akira Fukumoto , Masami Kawabuchi , Hiroshi Fukukita , Jun-ichi Sato
发明人： Akira Fukumoto , Masami Kawabuchi , Hiroshi Fukukita , Jun-ichi Sato
IPC分类号： H04R17/00 , A61B8/00 , B06B1/06 , G01N29/24 , G10K11/02 , H01L41/10
CPC分类号： B06B1/0622 , A61B8/4494 , G10K11/02
摘要： An ultrasonic probe particularly suitable for ultrasonic diagnostic equipments of the electronic scanning type is made up of a multiplicity of piezoelectric transducer elements, each in the shape of a rectangular plate with electrode films coated on both sides, arranged in a row at intervals and an acoustic impedance matching layer placed on the row of the transducer elements. The width-to-thickness ratio of each piezoelectric plate takes a value not greater than 0.8 and preferably between 0.4 and 0.7 so that the plate can vibrate in width expansion mode. It is highly preferable that the impedance matching layer has a laminated structure given by two layers which are different in acoustic impedance of the respective materials and individually have definite thicknesses.

3. 发明授权

US4224829A Two-dimensional linear B-scan ultrasound diagnostic apparatus with phase and amplitude tapering 失效
标题翻译：二维线性B扫描超声诊断仪具有相位和幅度逐渐减小
公开(公告)号：US4224829A
公开(公告)日：1980-09-30
申请号：US962609
申请日：1978-11-21
申请人： Masami Kawabuchi , Jun-ichi Sato , Kiyotaka Nagai , Hiroshi Fukukita , Akira Fukumoto
发明人： Masami Kawabuchi , Jun-ichi Sato , Kiyotaka Nagai , Hiroshi Fukukita , Akira Fukumoto
IPC分类号： A61B8/00 , A61B8/14 , G01N29/04 , G01N29/06 , G01S7/52 , G10K11/34 , G01N29/00
CPC分类号： G10K11/345 , G01N29/06 , G01N29/245 , G01S7/5206
摘要： An ultrasound diagnostic apparatus includes a linear array of piezoelectric transducers or plates with a width-to-thickness ratio of less than 0.8 and a control circuit which includes a transmitter and a receiver. The transmitter comprises a plurality of transmitting channels each including a local oscillator for generating an ultrasonic pulse in response to a clock signal. The plurality of such ultrasonic pulses are applied through a switching network to a selected group of successively arranged piezoelectric transducers to transmit a beam of ultrasonic energy into a human body. Each of the ultrasonic pulses is phase shifted and amplitude modulated with respect to the ultrasonic pulses of the other transmitting channels to provide phase and amplitude taper which results in a narrow width beam through the depth of the body. The ultrasonic energy returned from discontinuities between different tissues is detected by the activated transducers and applied through the switching network to the receiver in which each of the return signals is phase shifted and amplitude modulated with respect to the other signals to provide an output signal which is displayed on a cathode ray tube screen.
摘要翻译：超声波诊断装置包括宽度与厚度比小于0.8的压电换能器或板的线性阵列和包括发射器和接收器的控制电路。发射机包括多个发射信道，每个发射信道包括响应于时钟信号产生超声波脉冲的本地振荡器。多个这样的超声波脉冲通过切换网络施加到所选择的一组连续布置的压电换能器，以将超声能量束传输到人体内。每个超声波脉冲相对于其他发射通道的超声波脉冲进行相移和幅度调制，以提供相位和幅度锥度，这导致通过身体深度的窄宽度束。通过激活的换能器检测从不同组织之间的不连续性返回的超声能量，并通过开关网络将其施加到接收机，其中每个返回信号相对于其他信号被相移和幅度调制以提供输出信号，显示在阴极射线管屏幕上。

4. 发明授权

US07528442B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07528442B2
公开(公告)日：2009-05-05
申请号：US11399441
申请日：2006-04-07
申请人： Akira Fukumoto , Rie Watanabe
发明人： Akira Fukumoto , Rie Watanabe
IPC分类号： H01L29/72
CPC分类号： H01L29/1083 , H01L29/7833
摘要： In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.
摘要翻译：在本发明中，半导体器件设置有形成在栅极绝缘膜上的栅电极，该栅电极由形成在第一导电类型的半导体层上的元件隔离区域和第二导电的源极区域和漏极区域类型。源极区域和漏极区域中的至少一个具有第一低浓度区域和高浓度区域。此外，本发明的半导体器件在第一导电类型的第二低浓度区域之间设置在形成于元件隔离部之下的沟道阻挡区域与源极区域之间以及沟道阻挡区域与漏极区域之间。栅电极正下方的半导体层沿着栅极突出到沟道截止区侧，半导体层和沟道截止区相互接触。

5. 发明授权

US5580471A Apparatus and method for material treatment and inspection using fiber-coupled laser diode 失效
标题翻译：使用光纤耦合激光二极管进行材料处理和检验的装置和方法
公开(公告)号：US5580471A
公开(公告)日：1996-12-03
申请号：US220119
申请日：1994-03-30
申请人： Akira Fukumoto , Paul Laferriere , Abdelkrim Tatah
发明人： Akira Fukumoto , Paul Laferriere , Abdelkrim Tatah
IPC分类号： B23K26/03 , B23K26/04 , B23K26/42 , G02B6/36 , G02B6/42 , B23K26/02 , B23K26/08
CPC分类号： B23K26/032 , B23K26/034 , B23K26/04 , B23K26/702 , G02B6/3636 , G02B6/4249 , G02B6/3652 , G02B6/3676 , G02B6/3692 , G02B6/422
摘要： Apparatus and method for the precision treatment of a material using a semiconductor diode for generating a plurality of laser light beams, optical fibers coupled to the diode for transmitting and combining the light beams, and a scanner for scanning the combined light beams onto the material to be treated. Also, channels micromachined onto a fixture are provided for supporting the fibers in optimum alignment with the diode. Also provided are a camera and a thermal image capturing system for generating optical and thermal images of the material. An image processing unit is provided for receiving and processing the image to generate and transmit control signals to a diode controller to control intensity and timing of the light beams, and to a controller of the scanner to control positioning of the scanner to deflect the laser beam over the material as desired.
摘要翻译：用于使用半导体二极管精密处理产生多个激光束的装置和方法，耦合到用于传输和组合光束的二极管的光纤，以及用于将组合的光束扫描到材料上的扫描仪被处理。此外，微机械加工到夹具上的通道被提供用于支撑与二极管最佳对准的纤维。还提供了用于产生材料的光学和热图像的相机和热图像捕获系统。提供图像处理单元，用于接收和处理图像以产生并发送控制信号到二极管控制器以控制光束的强度和定时，以及扫描仪的控制器，以控制扫描仪的定位以偏转激光束在所需的材料上。

6. 发明授权

US4552152A Ultrasonic diagnostic apparatus using Doppler effect 失效
标题翻译：超声诊断仪使用多普勒效应
公开(公告)号：US4552152A
公开(公告)日：1985-11-12
申请号：US513323
申请日：1983-07-13
申请人： Ryobun Tachita , Tsutomu Yano , Hiroshi Fukukita , Kuniaki Fukaya , Akira Fukumoto
发明人： Ryobun Tachita , Tsutomu Yano , Hiroshi Fukukita , Kuniaki Fukaya , Akira Fukumoto
IPC分类号： A61B8/00 , A61B8/06 , A61B10/00
CPC分类号： A61B8/06
摘要： Ultrasonic echo signals are detected in phase and integrated with a period corresponding to an ultrasonic pulse. The integrated values are sampled and the difference between two integrated values is successively frequency-analyzed.
摘要翻译：超声波回波信号被相位检测并且与对应于超声脉冲的周期集成。对积分值进行采样，并对两个积分值之间的差值进行连续频率分析。

7. 发明授权

US4440025A Arc scan transducer array having a diverging lens 失效
标题翻译：具有发散透镜的弧扫描换能器阵列
公开(公告)号：US4440025A
公开(公告)日：1984-04-03
申请号：US277816
申请日：1981-06-26
申请人： Yoshihiro Hayakawa , Tsutomu Yano , Ryobun Tachita , Hiroshi Fukukita , Kazuyoshi Irioka , Akira Fukumoto
发明人： Yoshihiro Hayakawa , Tsutomu Yano , Ryobun Tachita , Hiroshi Fukukita , Kazuyoshi Irioka , Akira Fukumoto
IPC分类号： H04R17/00 , A61B8/00 , A61B8/14 , B06B1/06 , G01S7/521 , G01S7/523 , G01S15/89 , G10K11/02 , G10K11/30 , G10K11/32 , G10K11/34 , G01N29/00
CPC分类号： G01S15/892 , B06B1/0633 , G10K11/02 , G10K11/32
摘要： An ultrasonic transducer array for arc scan imaging systems comprises a plurality of elongated piezoelectric transducers arranged successively to define a convexed energy radiating surface. A plano-concave acoustic diverging lens is attached to the convexed surface to diverge the acoustic energy transmitted from the transducers in an increased steering angle. The transducers are assembled on an impedance matching layer which defines the convexed radiating surface. The acoustic impedance of the diverging lens is substantially equal to the acoustic impedance of the human body, while the acoustic impedance of the impedance matching layer is greater than that of the human body.
摘要翻译：用于电弧扫描成像系统的超声换能器阵列包括多个细长的压电换能器，其连续布置以限定凸起的能量辐射表面。平凹声扩散透镜附着到凸起的表面上，以在增加的转向角度上分离从换能器传递的声能。换能器组装在限定凸起辐射表面的阻抗匹配层上。发散透镜的声阻抗基本上等于人体的声阻抗，而阻抗匹配层的声阻抗大于人体的声阻抗。

8. 发明申请

US20090203179A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090203179A1
公开(公告)日：2009-08-13
申请号：US12423332
申请日：2009-04-14
申请人： Akira Fukumoto , Rie Watanabe
发明人： Akira Fukumoto , Rie Watanabe
IPC分类号： H01L21/8234
CPC分类号： H01L29/1083 , H01L29/7833
摘要： In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.
摘要翻译：在本发明中，半导体器件设置有形成在栅极绝缘膜上的栅电极，该栅电极由形成在第一导电类型的半导体层上的元件隔离区域和第二导电的源极区域和漏极区域类型。源极区域和漏极区域中的至少一个具有第一低浓度区域和高浓度区域。此外，本发明的半导体器件在第一导电类型的第二低浓度区域之间设置在形成于元件隔离部之下的沟道阻挡区域与源极区域之间以及沟道阻挡区域与漏极区域之间。栅电极正下方的半导体层沿着栅极突出到沟道截止区侧，半导体层和沟道截止区相互接触。

9. 发明申请

US20060231916A1 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20060231916A1
公开(公告)日：2006-10-19
申请号：US11399441
申请日：2006-04-07
申请人： Akira Fukumoto , Rie Watanabe
发明人： Akira Fukumoto , Rie Watanabe
IPC分类号： H01L29/00
CPC分类号： H01L29/1083 , H01L29/7833
摘要： In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

10. 发明授权

US06248133B1 Solid state imaging device and a method of driving the same 失效
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US06248133B1
公开(公告)日：2001-06-19
申请号：US08631834
申请日：1996-04-10
申请人： Hiroyoshi Komobuchi , Akira Fukumoto , Takahiro Yamada , Takao Kuroda , Yuji Matsuda
发明人： Hiroyoshi Komobuchi , Akira Fukumoto , Takahiro Yamada , Takao Kuroda , Yuji Matsuda
IPC分类号： H04M5335
CPC分类号： H01L27/14806
摘要： A solid state imaging device has: a first polysilicon layer 901; a second polysilicon layer 902; a photoelectric converting portion or PD 903; a read gate 904; a read channel 905 (in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer 906 which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer 907 which defines the transfer channel region of a VCCD; and a VCCD 908 which transfers a signal charge in the direction of the arrows. A unit pixel 900 is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V1 911, a driving pulse &phgr;V2 912, a driving pulse &phgr;V3 913, a driving pulse &phgr;V4 914, a driving pulse &phgr;V5 915, a driving pulse &phgr;V6 916, a driving pulse &phgr;V7 917, and a driving pulse &phgr;V8 918.
摘要翻译：固态成像装置具有：第一多晶硅层901; 第二多晶硅层902; 光电转换部分或PD 903; 读门904; 在读取栅极下方形成半导体的读通道905（在这种情况下为N层）; P层906，其防止信号电荷错误地进入水平方向相邻的单位像素的VCCD; 限定VCCD的传输通道区域的P层907; 以及VCCD 908，其沿箭头方向传送信号电荷。单位像素900由单点划线表示。二维排列的固态成像装置由驱动脉冲phiV1 911，驱动脉冲phiV2 912，驱动脉冲phiV3 913，驱动脉冲phiV4 914，驱动脉冲phiV5 驱动脉冲phiV6 916，驱动脉冲phiV7 917，驱动脉冲phiV8 918。

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