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1. 发明授权

US08435815B2 Surface-emitting semiconductor laser and manufacturing method thereof 失效
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US08435815B2
公开(公告)日：2013-05-07
申请号：US12926917
申请日：2010-12-17
申请人： Masaki Shiozaki , Osamu Maeda , Takahiro Arakida , Susumu Sato
发明人： Masaki Shiozaki , Osamu Maeda , Takahiro Arakida , Susumu Sato
IPC分类号： B82Y20/00
CPC分类号： H01S5/18355 , H01S5/18313 , H01S5/1833 , H01S5/18338 , H01S5/18358
摘要： A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.
摘要翻译：表面发射半导体激光器的制造方法包括以下步骤：形成具有下层多层膜反射体的层叠结构，所述下多层膜反射体包括具有至少一层的下部可氧化层，具有发光区域的有源层，上部多层膜膜反射器，其依次包括基板上的上部可氧化层和上层; 在上层提供第一凹槽; 并且在所述堆叠结构中设置包括与所述第一凹槽重叠的部分的平面形状的第二凹槽和不与所述第一凹槽重叠的部分。

2. 发明授权

US08098703B2 Laser diode and method of manufacturing the same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08098703B2
公开(公告)日：2012-01-17
申请号：US12656427
申请日：2010-01-29
申请人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Susumu Sato , Takahiro Arakida
发明人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Susumu Sato , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/02276 , H01S5/0425 , H01S5/0607 , H01S5/18311 , H01S5/1833 , H01S5/18355 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/32325 , H01S5/32341 , H01S5/3404 , H01S5/3432 , H01S5/423 , H01S2301/166 , H01S2304/04
摘要： A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in order from a substrate side, in which the laminate configuration includes a columnar mesa section including an upper part of the lower multilayer reflecting mirror, the active layer and the upper multilayer reflecting mirror, and the lower multilayer reflecting mirror includes a plurality of pairs of a low refractive index layer and a high refractive index layer, and a plurality of oxidation layers nonuniformly distributed in a direction rotating around a central axis of the mesa section in a region except for a central region of one or more of the low refractive index layers.
摘要翻译：提供允许在一个方向上稳定激光的偏振方向的激光二极管。激光二极管包括从基板侧起按顺序包括下层多层反射镜，有源层和上多层反射镜的叠层结构，其中层叠结构包括柱状台面部分，该柱状台面部分包括下多层反射镜的上部有源层和上层多层反射镜以及下层多层反射镜包括多对低折射率层和高折射率层，以及多个氧化层，其不均匀分布在围绕中心的方向上旋转在除了一个或多个低折射率层的中心区域之外的区域中的台面部分的轴线。

3. 发明授权

US08582615B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08582615B2
公开(公告)日：2013-11-12
申请号：US13064424
申请日：2011-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
发明人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
IPC分类号： H01S5/026 , H01S5/187
CPC分类号： H01S5/18311 , H01S5/02276 , H01S5/0261 , H01S5/18391 , H01S5/423 , H01S2301/18
摘要： There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.
摘要翻译：提供了一种半导体发光装置，其包括允许精确估计元件温度的温度检测部。半导体发光器件包括：半导体衬底上的一个或多个表面发射半导体发光部分和一个或多个半导体温度检测部分，表面发射半导体发光部分沿方向发光垂直于半导体衬底的半导体温度检测部分不向外部发光。半导体发光部和半导体温度检测部在与半导体基板垂直的方向上具有PN结或PIN结。

4. 发明申请

US20110243174A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20110243174A1
公开(公告)日：2011-10-06
申请号：US13064424
申请日：2011-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
发明人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
IPC分类号： H01S5/32
CPC分类号： H01S5/18311 , H01S5/02276 , H01S5/0261 , H01S5/18391 , H01S5/423 , H01S2301/18
摘要： There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.
摘要翻译：提供了一种半导体发光装置，其包括允许精确估计元件温度的温度检测部。半导体发光器件包括：半导体衬底上的一个或多个表面发射半导体发光部分和一个或多个半导体温度检测部分，表面发射半导体发光部分沿方向发光垂直于半导体衬底的半导体温度检测部分不向外部发光。半导体发光部和半导体温度检测部在与半导体基板垂直的方向上具有PN结或PIN结。

5. 发明申请

US20100226402A1 Laser diode and method of manufacturing the same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20100226402A1
公开(公告)日：2010-09-09
申请号：US12656427
申请日：2010-01-29
申请人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Susumu Sato , Takahiro Arakida
发明人： Osamu Maeda , Yuji Masui , Masaki Shiozaki , Susumu Sato , Takahiro Arakida
IPC分类号： H01S5/323 , H01L21/328 , H01S5/24
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/02276 , H01S5/0425 , H01S5/0607 , H01S5/18311 , H01S5/1833 , H01S5/18355 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/32325 , H01S5/32341 , H01S5/3404 , H01S5/3432 , H01S5/423 , H01S2301/166 , H01S2304/04
摘要： A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in order from a substrate side, in which the laminate configuration includes a columnar mesa section including an upper part of the lower multilayer reflecting mirror, the active layer and the upper multilayer reflecting mirror, and the lower multilayer reflecting mirror includes a plurality of pairs of a low refractive index layer and a high refractive index layer, and a plurality of oxidation layers nonuniformly distributed in a direction rotating around a central axis of the mesa section in a region except for a central region of one or more of the low refractive index layers.
摘要翻译：提供允许在一个方向上稳定激光的偏振方向的激光二极管。激光二极管包括从基板侧起按顺序包括下层多层反射镜，有源层和上多层反射镜的叠层结构，其中层叠结构包括柱状台面部分，该柱状台面部分包括下多层反射镜的上部有源层和上层多层反射镜以及下层多层反射镜包括多对低折射率层和高折射率层，以及多个氧化层，其不均匀分布在围绕中心的方向上旋转在除了一个或多个低折射率层的中心区域之外的区域中的台面部分的轴线。

6. 发明申请

US20110182315A1 Surface-emitting semiconductor laser and manufacturing method thereof 失效
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US20110182315A1
公开(公告)日：2011-07-28
申请号：US12926917
申请日：2010-12-17
申请人： Masaki Shiozaki , Osamu Maeda , Takahiro Arakida , Susumu Sato
发明人： Masaki Shiozaki , Osamu Maeda , Takahiro Arakida , Susumu Sato
IPC分类号： H01S5/24 , H01L33/46
CPC分类号： H01S5/18355 , H01S5/18313 , H01S5/1833 , H01S5/18338 , H01S5/18358
摘要： A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.
摘要翻译：表面发射半导体激光器的制造方法包括以下步骤：形成具有下层多层膜反射体的层叠结构，所述下多层膜反射体包括具有至少一层的下部可氧化层，具有发光区域的有源层，上部多层膜膜反射器，其依次包括基板上的上部可氧化层和上层; 在上层提供第一凹槽; 并且在所述堆叠结构中设置包括与所述第一凹槽重叠的部分的平面形状的第二凹槽和不与所述第一凹槽重叠的部分。

7. 发明授权

US08363689B2 Laser diode array, method of manufacturing same, printer, and optical communication device 有权
公开(公告)号：US08363689B2
公开(公告)日：2013-01-29
申请号：US13064218
申请日：2011-03-11
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/187
CPC分类号： H01S5/423 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/0217 , H01S5/02272 , H01S5/02276 , H01S5/042 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/1838 , H01S5/187 , H01S5/34313 , H01S2304/04 , Y10S438/977
摘要： A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

8. 发明授权

US08488647B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08488647B2
公开(公告)日：2013-07-16
申请号：US12923634
申请日：2010-09-30
申请人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
发明人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
IPC分类号： H01S5/00
CPC分类号： H01S5/0264 , H01S5/18313 , H01S5/18325
摘要： The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
摘要翻译：本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。除了用于变窄的电流的第一氧化层之外，在有源层和半导体光检测元件之间提供一个或多个第二氧化层。由于天然发射光包含许多发散分量，所以天然发射光被第二氧化层反射和散射，并且抑制了将自然发射光传播到半导体光检测元件侧。半导体光检测元件的自然发光的检测水平降低，光检测精度提高。第一和第二氧化层通过单一氧化工艺形成，从而简化了制造工艺。

9. 发明申请

US20110164646A1 Laser diode array, method of manufacturing same, printer, and optical communication device 有权
标题翻译：激光二极管阵列，制造方法，打印机和光通信装置
公开(公告)号：US20110164646A1
公开(公告)日：2011-07-07
申请号：US13064218
申请日：2011-03-11
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/187 , H01S5/42
CPC分类号： H01S5/423 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/0217 , H01S5/02272 , H01S5/02276 , H01S5/042 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/1838 , H01S5/187 , H01S5/34313 , H01S2304/04 , Y10S438/977
摘要： A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.
摘要翻译：提供一种制造能够抑制串扰的激光二极管阵列的方法。制造激光二极管阵列的方法包括以下步骤：通过晶体生长从第一衬底侧顺序地在第一衬底上形成含有可氧化材料和垂直谐振器结构的剥离层，然后选择性地蚀刻剥离层和垂直谐振器结构，从而处理成柱状，从侧面氧化剥离层的剥离步骤，然后从第一基板剥离柱状的垂直共振器结构，以及重新连接步骤，连接多个将通过剥离步骤获得的柱状垂直共振器结构施加到在表面上形成有金属层的第二基板的金属层的表面上。

10. 发明申请

US20110096806A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20110096806A1
公开(公告)日：2011-04-28
申请号：US12923634
申请日：2010-09-30
申请人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
发明人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
IPC分类号： H01S5/02
CPC分类号： H01S5/0264 , H01S5/18313 , H01S5/18325
摘要： The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
摘要翻译：本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。除了用于变窄的电流的第一氧化层之外，在有源层和半导体光检测元件之间提供一个或多个第二氧化层。由于天然发射光包含许多发散分量，所以天然发射光被第二氧化层反射和散射，并且抑制了将自然发射光传播到半导体光检测元件侧。半导体光检测元件的自然发光的检测水平降低，光检测精度提高。第一和第二氧化层通过单一氧化工艺形成，从而简化了制造工艺。

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