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1. 发明授权

US08488647B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08488647B2
公开(公告)日：2013-07-16
申请号：US12923634
申请日：2010-09-30
申请人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
发明人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
IPC分类号： H01S5/00
CPC分类号： H01S5/0264 , H01S5/18313 , H01S5/18325
摘要： The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
摘要翻译：本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。除了用于变窄的电流的第一氧化层之外，在有源层和半导体光检测元件之间提供一个或多个第二氧化层。由于天然发射光包含许多发散分量，所以天然发射光被第二氧化层反射和散射，并且抑制了将自然发射光传播到半导体光检测元件侧。半导体光检测元件的自然发光的检测水平降低，光检测精度提高。第一和第二氧化层通过单一氧化工艺形成，从而简化了制造工艺。

2. 发明申请

US20110096806A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20110096806A1
公开(公告)日：2011-04-28
申请号：US12923634
申请日：2010-09-30
申请人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
发明人： Takahiro Arakida , Shiro Uchida , Masaki Shiozaki , Osamu Maeda
IPC分类号： H01S5/02
CPC分类号： H01S5/0264 , H01S5/18313 , H01S5/18325
摘要： The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
摘要翻译：本发明提供一种通过简单的制造工艺实现增加的光检测精度的半导体发光器件。除了用于变窄的电流的第一氧化层之外，在有源层和半导体光检测元件之间提供一个或多个第二氧化层。由于天然发射光包含许多发散分量，所以天然发射光被第二氧化层反射和散射，并且抑制了将自然发射光传播到半导体光检测元件侧。半导体光检测元件的自然发光的检测水平降低，光检测精度提高。第一和第二氧化层通过单一氧化工艺形成，从而简化了制造工艺。

3. 发明授权

US08582615B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08582615B2
公开(公告)日：2013-11-12
申请号：US13064424
申请日：2011-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
发明人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
IPC分类号： H01S5/026 , H01S5/187
CPC分类号： H01S5/18311 , H01S5/02276 , H01S5/0261 , H01S5/18391 , H01S5/423 , H01S2301/18
摘要： There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.
摘要翻译：提供了一种半导体发光装置，其包括允许精确估计元件温度的温度检测部。半导体发光器件包括：半导体衬底上的一个或多个表面发射半导体发光部分和一个或多个半导体温度检测部分，表面发射半导体发光部分沿方向发光垂直于半导体衬底的半导体温度检测部分不向外部发光。半导体发光部和半导体温度检测部在与半导体基板垂直的方向上具有PN结或PIN结。

4. 发明申请

US20110243174A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20110243174A1
公开(公告)日：2011-10-06
申请号：US13064424
申请日：2011-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
发明人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
IPC分类号： H01S5/32
CPC分类号： H01S5/18311 , H01S5/02276 , H01S5/0261 , H01S5/18391 , H01S5/423 , H01S2301/18
摘要： There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.
摘要翻译：提供了一种半导体发光装置，其包括允许精确估计元件温度的温度检测部。半导体发光器件包括：半导体衬底上的一个或多个表面发射半导体发光部分和一个或多个半导体温度检测部分，表面发射半导体发光部分沿方向发光垂直于半导体衬底的半导体温度检测部分不向外部发光。半导体发光部和半导体温度检测部在与半导体基板垂直的方向上具有PN结或PIN结。

5. 发明申请

US20080108160A1 Semiconductor Light Emitting Device, Its Manufacturing Method, Semiconductor Device and Its Manufacturing Method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US20080108160A1
公开(公告)日：2008-05-08
申请号：US11969088
申请日：2008-01-03
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

6. 发明授权

US07369594B2 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US07369594B2
公开(公告)日：2008-05-06
申请号：US11276040
申请日：2006-02-10
申请人： Shinichi Agatsuma , Shiro Uchida
发明人： Shinichi Agatsuma , Shiro Uchida
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/0655 , H01S5/2219 , H01S5/222 , H01S5/32325
摘要： A semiconductor laser of effective index type which has a lower cladding layer, an active layer, and an upper cladding layer, which are sequentially arranged upward, with said upper cladding layer being formed into the stripe ridge structure, wherein the upper cladding layer forming the foot and slope of said stripe ridge structure is covered with a buried layer of layered structure made up of two or more low refractive index layers to prevent absorption of the laser light, with a light-absorbing layer interposed between them which absorbs the laser light of oscillatory wavelength. This semiconductor laser prevents kinks due to higher-order modes, and hence it realizes a high level of output.
摘要翻译：一种有效折射率类型的半导体激光器，其具有下包层，有源层和上包层，所述下包层依次布置在上方，所述上包层形成为条脊结构，其中形成所述条纹脊结构的脚和斜面被由两个或更多个低折射率层组成的层状结构的掩埋层覆盖以防止激光的吸收，其间插入有吸收光的吸收层，其吸收激光的振荡波长。该半导体激光器防止由于高阶模式引起的扭结，因此实现了高水平的输出。

7. 发明授权

US06954477B2 Semiconductor laser device and fabrication method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06954477B2
公开(公告)日：2005-10-11
申请号：US10821342
申请日：2004-04-09
申请人： Shiro Uchida , Tsuyoshi Tojo
发明人： Shiro Uchida , Tsuyoshi Tojo
IPC分类号： H01S5/042 , H01S5/22 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2213
摘要： A method of fabricating a ridge-waveguide type semiconductor laser device having a large half-value width and a high kink level is provided. First, an effective refractive index difference Δn between an effective refractive index neff1 of the ridge and an effective refractive index neff2 of a portion on each of both sides of the ridge is taken as Δn=neff1−neff2, and a ridge width is taken as W. On such an assumption, constants “a”, “b”, “c”, and “d” of the following three equations are set on X-Y coordinates (X-axis: W, Y-axis: Δn) The first equation is expressed by Δn≦a×W+b, where “a” and “b” are constants determining a kink level. The second equation is expressed by W≧c, where “c” is a constant specifying a minimum ridge width at the time of formation of the ridge. The third equation is expressed by Δn≧d, where “d” is a constant specified by a desired half-width value θpara. Then at least either of a kind and a thickness of an insulating film, a thickness of an electrode film on the insulating film, and a kind and a thickness of a portion, located on each of both the sides of the ridge, of the upper cladding layer is set in such a manner that a combination of Δn and W satisfies the above three equations.
摘要翻译：提供一种制造具有大的半值宽度和高扭结等级的脊 - 波导型半导体激光器件的方法。首先，脊的两侧的部分的有效折射率nλeff1 <！ - SIPO - >的有效折射率差值Deltan，被取为Deltan = n eff1 eff2 ，并且脊宽度取为W.在这样的假设下，常数“a”，“b”，“c 在XY坐标（X轴：W，Y轴：Deltan）上设置以下三个方程的“d”和“d”。第一方程由Deltan <= axW + b表示，其中“a”和“b” 是确定扭结水平的常数。第二方程用W> = c表示，其中“c”是指定形成脊时的最小脊宽度的常数。第三个方程由Deltan> = d表示，其中“d”是由期望的半角值θ指定的常数。然后，将绝缘膜的种类和厚度，绝缘膜上的电极膜的厚度和位于隆起的两侧的每一侧上的部分的种类和厚度中的至少一个，上部以如下方式设置包层：Deltan和W的组合满足上述三个等式。

8. 发明授权

US5953357A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5953357A
公开(公告)日：1999-09-14
申请号：US924453
申请日：1997-08-28
申请人： Shoji Hirata , Shiro Uchida , Koji Iwamoto , Hiroki Nagasaki , Tsuyoshi Tojyo
发明人： Shoji Hirata , Shiro Uchida , Koji Iwamoto , Hiroki Nagasaki , Tsuyoshi Tojyo
IPC分类号： H01S5/00 , H01S5/065 , H01S5/10 , H01S5/223 , H01S5/327 , H01S3/19
CPC分类号： H01S5/065 , H01S5/10 , H01S5/327 , H01S2301/18 , H01S5/0655 , H01S5/0658 , H01S5/1014 , H01S5/1064 , H01S5/2231
摘要： An AlGaInP-based buried-ridge semiconductor laser includes an n-type GaAs current blocking layer 8 buried in opposite sides of a ridge stripe portion 7 which is made of an upper-layer portion of a p-type AlGaInP cladding layer 4, p-type GaInP intermediate layer 5 and p-type GaAs contact layer 6. The ridge stripe portion 7 includes tapered regions 7a having the length of L1 at cavity-lengthwise opposite ends of the ridge stripe portion 7.
摘要翻译：基于AlGaInP的埋脊半导体激光器包括埋置在由p型AlGaInP包覆层4的上层部分形成的脊条部分7的相对侧的n型GaAs电流阻挡层8，型GaInP中间层5和p型GaAs接触层6.脊条部分7包括在脊条部分7的空腔纵向相对端具有L1长度的锥形区域7a。

9. 发明申请

US20060273326A1 Semiconductor Light Emitting Device, its Manufacturing Method, Semiconductor Device and Its Manufacturing Method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US20060273326A1
公开(公告)日：2006-12-07
申请号：US11425595
申请日：2006-06-21
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

10. 发明申请

US20050207462A1 Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：US20050207462A1
公开(公告)日：2005-09-22
申请号：US11053430
申请日：2005-02-08
申请人： Shinichi Agatsuma , Shiro Uchida
发明人： Shinichi Agatsuma , Shiro Uchida
IPC分类号： G11B7/125 , G11B7/00 , G11B7/1275 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/40
CPC分类号： G11B7/1275 , G11B2007/0006 , H01S5/2063 , H01S5/2231 , H01S5/3211 , H01S5/32325 , H01S5/4031 , H01S5/4087
摘要： A semiconductor laser is provided, of a configuration that is capable of correcting a difference between refractive indexes when an epitaxial growth is given in an irregular surface condition. A semiconductor laser is formed, which has a semiconductor laser element of a compound semiconductor containing at least Al and In, and having at least p-type cladding layers, an active layer, and an-type cladding layer, and has a configuration in which at least part of the p-type cladding layers have an Al composition in relatively larger amount as compared with an Al composition of the n-type cladding layer or at least part of the n-type cladding layer has an Al composition in relatively smaller amount as compared with the Al composition of the p-type cladding layers.
摘要翻译：提供了一种能够在不规则表面状态下进行外延生长时校正折射率差的结构的半导体激光器。形成半导体激光器，其具有至少包含Al和In的化合物半导体的半导体激光元件，并且至少具有p型覆层，有源层和类型包层，并且具有其中与n型包覆层的Al组成相比，p型包层的至少一部分具有相对较大量的Al组成，或者n型包覆层的至少一部分具有相对较小量的Al组成与p型覆层的Al组成相比。

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