专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06579363B2 Semiconductor single crystal pulling apparatus 有权
公开(公告)号：US06579363B2
公开(公告)日：2003-06-17
申请号：US09978206
申请日：2001-10-17
申请人： Souroku Kawanishi , Masahito Watanabe , Minoru Eguchi
发明人： Souroku Kawanishi , Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B1520
CPC分类号： C30B15/305 , C30B15/30 , Y10S117/917 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： By using a semiconductor single crystal pulling apparatus for growing single crystals by the Czochralski method while rotating the melt by a magnetic field and electric current, namely by the EMCZ method, which comprises a main pulling means for pulling a single crystal, a holding mechanism for gripping an engaging stepped portion formed on the single crystal through engaging members and a sub pulling means for moving the holding mechanism up and down and in which an electric current is passed through the main pulling means and through the sub pulling means, it is possible to prevent heavy single crystals from undergoing a falling accident and, at the same time, effectively reduce the power consumption. In this pulling apparatus, it is effective to feed an electric current to the sub pulling means alone and it is desirable to dispose two or more electrodes whether the pulling means is of a shaft type or wire type.

2. 发明授权

US06527852B1 Semiconductor crystal growing apparatus and crystal growing method 有权
标题翻译：半导体晶体生长装置和晶体生长方法
公开(公告)号：US06527852B1
公开(公告)日：2003-03-04
申请号：US09762469
申请日：2001-04-18
申请人： Masahito Watanabe , Minoru Eguchi
发明人： Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/20 , C30B15/305 , Y10S117/917
摘要： A semiconductor crystal growing apparatus includes a device for applying a magnetic field to inside a semiconductor melt and a device for passing a current through the semiconductor melt. An electrode for applying the current to the inside of the semiconductor melt extends through a tube surrounding the electrode.
摘要翻译：半导体晶体生长装置包括用于向半导体熔体内部施加磁场的装置和使电流通过半导体熔体的装置。用于将电流施加到半导体熔体内部的电极延伸穿过围绕电极的管。

3. 发明授权

US06497761B2 Apparatus and method of growing single crystal of semiconductor 有权
标题翻译：生长半导体单晶的装置和方法
公开(公告)号：US06497761B2
公开(公告)日：2002-12-24
申请号：US09800027
申请日：2001-03-06
申请人： Masahito Watanabe , Minoru Eguchi
发明人： Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B1520
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/10
摘要： An apparatus for growing a single crystal of semiconductor is provided, which makes it possible to grow a heavy single crystal of semiconductor of 100 kg or greater in weight even if a growing single crystal contains a neck. In the apparatus, the first and second electrodes are provided such that the first ends of the first and second electrodes are electrically connected to the power supply and the second ends of the first and second electrodes are contacted with the melt in the crucible. During the growth process, a specific voltage is applied across the first ends of the first and second electrodes, thereby forming the electrical current path interconnecting the second ends of the first and second electrodes in the melt. The magnetic field is generated with the magnetic field generator to intersect with the electrical current path in the melt. No electric current flows through the growing single crystal from the melt.
摘要翻译：提供了用于生长半导体单晶的装置，这使得即使生长的单晶含有颈部，也可以生长重量为100kg或更大的重型半导体单晶。在该装置中，第一和第二电极设置成使得第一和第二电极的第一端电连接到电源，并且第一和第二电极的第二端与坩埚中的熔体接触。在生长过程中，在第一和第二电极的第一端上施加特定电压，从而形成将熔融物中的第一和第二电极的第二端互连的电流通路。磁场发生器产生的磁场与熔体中的电流通路相交。没有电流从熔体流过生长的单晶。

4. 发明授权

US06432198B1 Method for growing a semiconductor crystal from a semiconductor melt 有权
公开(公告)号：US06432198B1
公开(公告)日：2002-08-13
申请号：US09775177
申请日：2001-02-01
申请人： Masahito Watanabe , Minoru Eguchi
发明人： Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B1500
摘要： In an apparatus for growing a semiconductor single crystal from semiconductor melt, a crucible retains the semiconductor melt. An electrode contacts with the semiconductor melt and applies current to the semiconductor melt. The electrode is formed of the same material as the semiconductor crystal.

5. 发明授权

US06221156B1 Apparatus for growing a semiconductor crystal 有权
标题翻译：用于生长半导体晶体的装置
公开(公告)号：US06221156B1
公开(公告)日：2001-04-24
申请号：US09268615
申请日：1999-03-15
申请人： Masahito Watanabe , Minoru Eguchi
发明人： Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B1500
CPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B29/42 , Y10S117/917 , Y10T117/1032
摘要： In an apparatus for growing a semiconductor crystal from semiconductor melt, a crucible retains the semiconductor melt. An electrode contacts with the semiconductor melt and applies current to the semiconductor melt. The electrode is formed of the same material as the semiconductor crystal.
摘要翻译：在用于从半导体熔体生长半导体晶体的装置中，坩埚保持半导体熔体。电极与半导体熔体接触并向半导体熔体施加电流。电极由与半导体晶体相同的材料形成。

6. 发明授权

US6077346A Semiconductor single crystal growing apparatus and crystal growing method 有权
标题翻译：半导体单晶生长装置和晶体生长方法
公开(公告)号：US6077346A
公开(公告)日：2000-06-20
申请号：US209770
申请日：1998-12-11
申请人： Masahito Watanabe , Minoru Eguchi
发明人： Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B15/20 , C30B15/00 , C30B15/30 , C30B29/06 , H01L21/208
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1032
摘要： In the growth of a semiconductor single crystal according to the Czochralski method, a magnetic field is generated in a semiconductor melt and a current is supplied in the semiconductor melt in a direction perpendicular to the magnetic field. This makes it possible to cause the semiconductor melt to rotate spontaneously without rotating the crucible, thereby to grow a single crystal of semiconductor without striation even when growing a single crystal of semiconductor having a large diameter. Also it is made possible to exactly control the rotation rate of the semiconductor melt by changing the intensity of the magnetic field and the magnitude of the current independently. Further, the distribution of the rotation rates in the semiconductor melt can also be varied by changing the position of electrodes or electrode protecting tubes for immersing in the semiconductor melt.
摘要翻译：在根据Czochralski方法的半导体单晶的生长中，在半导体熔体中产生磁场，并且在垂直于磁场的方向上在半导体熔体中供应电流。这使得可以使半导体熔体自发旋转而不转动坩埚，从而即使在生长具有大直径的半导体的单晶时，也无需条纹地生长半导体的单晶。此外，通过独立地改变磁场的强度和电流的大小，可以精确地控制半导体熔体的旋转速度。此外，也可以通过改变用于浸入半导体熔体中的电极或电极保护管的位置来改变半导体熔体中旋转速率的分布。

7. 发明授权

US6048779A Method of growing silicon monocrystal 有权
标题翻译：生长硅单晶的方法
公开(公告)号：US6048779A
公开(公告)日：2000-04-11
申请号：US186284
申请日：1998-11-05
申请人： Masahito Watanabe , Minoru Eguchi
发明人： Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B15/00 , C30B15/30
CPC分类号： C30B15/305
摘要： There is provided a method of growing silicon monocrystal by Czochralski method where cusp field is applied to molten silicon, including the step of applying cusp field to molten silicon so that a center of the cusp field is situated at a depth of one-third or greater of an entire depth of the molten silicon, the depth being defined as a distance from a surface level of the molten silicon. The method makes it possible to eliminate growth slits in all regions in a growth direction of grown silicon monocrystal, and in addition, to accomplish uniform oxygen concentration profile where a difference in an oxygen concentration in a direction of a diameter of crystal is equal to or smaller than 5%. Furthermore, the method makes it possible to eliminate growth slits in all regions in a growth direction in a large-diameter silicon monocrystal, for instance, having a 40 cm-diameter.
摘要翻译：提供了一种通过Czochralski法生长硅单晶的方法，其中将尖点场应用于熔融硅，包括将尖点场应用于熔融硅，使得尖点场的中心位于三分之一或更大的深度的熔融硅的整个深度，深度被定义为距离熔融硅的表面水平的距离。该方法可以消除所生长的单晶生长方向上的所有区域中的生长狭缝，此外，为了实现均匀的氧浓度分布，其中晶体直径方向的氧浓度差等于或等于小于5％。此外，该方法使得可以消除大直径硅单晶中的生长方向上的生长狭缝，例如具有40cm直径的生长狭缝。

8. 发明授权

US5367979A Monocrystal growing method 失效
标题翻译：单晶生长法
公开(公告)号：US5367979A
公开(公告)日：1994-11-29
申请号：US4439
申请日：1993-01-14
申请人： Masahito Watanabe , Minoru Eguchi
发明人： Masahito Watanabe , Minoru Eguchi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30
CPC分类号： C30B29/06 , C30B15/00
摘要： In a method of growing a monocrystalline silicon based on the Czochralski method, the thermal Rossby number is set to at least 80 to develop the convection of a liquid of melted silicon in an axially symmetric form. A tube made of quartz is inserted in the silicon liquid to supply oxygen thereto to control the oxygen density of a resultant crystal. According to this method, there can be grown a silicon monocrystal which contains oxygen in an arbitrary density range from 10.sup.15 /cm.sup.3 to 10.sup.18 /cm.sup.3 and which has a uniform oxygen density variation not exceeding 5% in a plane vertical to a direction of the crystal growth.
摘要翻译：在基于Czochralski方法生长单晶硅的方法中，将热罗斯比数设定为至少80以形成轴向对称形式的熔融硅液体的对流。将由石英制成的管插入硅液体中以供应氧气以控制所得晶体的氧气密度。根据该方法，可以生长含有1015 / cm3〜1018 / cm3的任意密度范围的氧的单晶硅，并且在垂直于晶体的方向的平面内具有不超过5％的均匀的氧浓度变化成长。

9. 发明申请

US20130150586A1 PROCESS FOR PRODUCING 1-TRIAZOLE-2-BUTANOL DERIVATIVES 有权
标题翻译：生产1-三唑-2-丁醇衍生物的方法
公开(公告)号：US20130150586A1
公开(公告)日：2013-06-13
申请号：US13818897
申请日：2011-08-31
申请人： Mitsuo Mimura , Masahito Watanabe , Nobuo Ishiyama , Takuya Yamada
发明人： Mitsuo Mimura , Masahito Watanabe , Nobuo Ishiyama , Takuya Yamada
IPC分类号： C07D401/06
CPC分类号： C07D401/06
摘要： An object is to provide a process for producing the compound of formula 1 in higher yield by the ring-opening addition reaction of epoxytriazole with amine under mild conditions without using a large excess of 4-methylenepiperidine. The process for producing (2R,3R)-2-(2,4-difluorophenyl)-3-(4-methylenepiperidin-1-yl)-1-(1H-1,2,4-triazol-1-yl)butan-2-ol or an acid addition salt thereof comprises reacting (2R,3S)-2-(2,4-difluorophenyl)-3-methyl-2-[(1H-1,2,4-triazol-1-yl)methyl]oxirane with an acid addition salt of 4-methylenepiperidine in a reaction solvent in the presence of a hydroxide of an alkali metal or an alkaline earth metal selected from the group consisting of lithium, sodium, calcium, and strontium, or a hydrate thereof.
摘要翻译：本发明的目的是提供一种通过在温和条件下环氧三唑与胺的开环加成反应而不使用大量过量的4-亚甲基哌啶，以更高的产率制备式1化合物的方法。（2R，3R）-2-（2,4-二氟苯基）-3-（4-亚甲基哌啶-1-基）-1-（1H-1,2,4-三唑-1-基）丁烷 -2-醇或其酸加成盐包括使（2R，3S）-2-（2,4-二氟苯基）-3-甲基-2 - [（1H-1,2,4-三唑-1-基）甲基]环氧乙烷与4-亚甲基哌啶的酸加成盐在反应溶剂中，在选自锂，钠，钙和锶的碱金属或碱土金属的氢氧化物或其水合物存在下，。

10. 发明授权

US08159532B2 Electronic image pickup apparatus 有权
标题翻译：电子摄像装置
公开(公告)号：US08159532B2
公开(公告)日：2012-04-17
申请号：US12077994
申请日：2008-03-21
申请人： Hiroshi Kodama , Masahito Watanabe
发明人： Hiroshi Kodama , Masahito Watanabe
IPC分类号： H04N5/225
CPC分类号： G03B17/00
摘要： An electronic image pickup apparatus includes a zoom lens system which is a taking optical system, an electronic image pickup element which is disposed at an image side of the taking optical system (zoom lens system), and which converts an image formed by the taking optical system (zoom lens system) to an electric signal, and an image restoring section which restores electrically a photographed image according to a difference in occurrence of an aberration by the taking optical system (zoom lens system) in an air environment photography and in a underwater environment photography.
摘要翻译：电子摄像装置包括作为拍摄光学系统的变焦透镜系统，设置在拍摄光学系统（变焦透镜系统）的像侧的电子摄像元件，并且将由拍摄光学部件形成的图像系统（变焦透镜系统）到电信号，以及图像恢复部，其根据在空气环境摄影和水中的拍摄光学系统（变焦透镜系统）发生的像差的差异而电摄影拍摄的图像环境摄影。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式