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1. 发明授权

US4270959A Method for the heat treatment of metal strip 失效
标题翻译：金属条的热处理方法
公开(公告)号：US4270959A
公开(公告)日：1981-06-02
申请号：US63508
申请日：1979-08-03
申请人： Masahiro Matsumoto , Kenji Kawate , Hidenobu Jinnouchi
发明人： Masahiro Matsumoto , Kenji Kawate , Hidenobu Jinnouchi
IPC分类号： C21D9/56 , C21D9/573 , C21D9/63 , F27B9/28 , C22F1/04 , C21D9/46
CPC分类号： C21D9/63 , C21D9/56 , F27B9/28
摘要： During the process in which a metal strip is moved in a floating condition, the metal strip is first heated, and thereafter cooled and annealed. In heating the metal strip, the metal strip is heated so that a central portion widthwise thereof is increased in temperature more than that of both edges widthwise thereof. The metal strip is heated in a manner as described whereby a great thermal stress is not introduced in the metal strip and consequently, there is less possibility to produce wrinkles in the metal strip.
摘要翻译：在金属带在浮动状态下移动的过程中，首先加热金属带，然后冷却和退火。在加热金属带时，金属带被加热，使得其宽度方向的中心部分的温度比其宽度方向的两个边缘的温度高。金属条以如上所述的方式加热，由此在金属带中不引入大的热应力，因此在金属带中产生皱纹的可能性较小。

2. 发明授权

US4288258A Method for cooling a metal strip during the process of heat treatment 失效
标题翻译：在热处理过程中冷却金属带的方法
公开(公告)号：US4288258A
公开(公告)日：1981-09-08
申请号：US063509
申请日：1979-08-03
申请人： Seiichiro Sekiwa , Kenji Kawate , Hidenobu Jinnouchi
发明人： Seiichiro Sekiwa , Kenji Kawate , Hidenobu Jinnouchi
IPC分类号： C21D9/573 , C21D9/63 , C21D9/52 , C22F1/00
CPC分类号： C21D9/573 , C21D9/63
摘要： During the process in which a metal strip is moved in a floating condition, the metal strip is first heated, and thereafter cooled and annealed. In cooling the metal strip, the metal strip is cooled so that both edges widthwise thereof are lowered in temperature more quickly than the temperature of a central portion widthwise thereof. The metal strip is cooled in a manner as described whereby a great thermal stress is not introduced in the metal strip and consequently, the metal strip is cooled without being wrinkled.
摘要翻译：在金属带在浮动状态下移动的过程中，首先加热金属带，然后冷却和退火。在冷却金属带时，金属条被冷却，使得其宽度方向的两个边缘的温度比其宽度方向的中心部分的温度更快地降低。金属条以如上所述的方式冷却，由此在金属带中不引入大的热应力，因此金属条被冷却而不起皱。

3. 发明授权

US4649248A Annealing furnace for annealing magnetic cores in a magnetic field 失效
标题翻译：用于在磁场中退火磁芯的退火炉
公开(公告)号：US4649248A
公开(公告)日：1987-03-10
申请号：US741255
申请日：1985-06-04
申请人： Hiroshi Yamaguchi , Teruaki Tanaka , Masatake Hirai , Tadashi Kohketsu , Masahiro Matsumoto , Kenji Kawate
发明人： Hiroshi Yamaguchi , Teruaki Tanaka , Masatake Hirai , Tadashi Kohketsu , Masahiro Matsumoto , Kenji Kawate
IPC分类号： C21D1/04 , H01F41/02 , H05B6/02 , H05B6/10
CPC分类号： H01F41/0213 , C21D1/04
摘要： An annealing furnace for annealing magnetic cores therein. Each magnetic core is placed on a tray on which the core is transferred on rollers through the furnace along with a conductive magnetizing conductor or shaft positioned inside the core and a current source for supplying a current to the conductive magnetizing shaft. After the tray, core and current source pass through the furnace, the annealed core is removed from the tray, and the tray and current source are returned to the furnace entrance for reuse with another core.
摘要翻译：一种用于退火磁芯的退火炉。每个磁芯被放置在托盘上，在该托盘上，核心在辊子上传送通过炉子以及位于芯体内部的导电磁化导体或轴以及用于向导电磁化轴提供电流的电流源。在托盘，核心和电流源通过炉子之后，将退火的芯从托盘移除，并将托盘和电流源返回到炉入口以与另一个核重新使用。

4. 发明授权

US6043156A Method of making semiconductor wafers 失效
标题翻译：制造半导体晶圆的方法
公开(公告)号：US6043156A
公开(公告)日：2000-03-28
申请号：US960000
申请日：1997-10-29
申请人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
发明人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
IPC分类号： H01L21/304 , C30B33/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/02008 , C30B33/00
摘要： It is an object of the present invention to provide a method for efficiently making semiconductor wafers that prevents the production of metal pollution. It is another object of the present invention to provide a method where the back side of the wafer does not influence the front side, thereof, and where the front and back sides of the wafer can be distinguished are polishing.This invention provides a method for efficiently making semiconductor wafers having uniform thickness where the thickness of the back side does not influence the front side and where the front side of the wafer is capable of being distinguished from the back side. A semiconductor ingot is sliced to obtain wafers. The sliced surfaces of the wafers are flattened. The flattened wafer is etched in alkaline etching solution. Both the front and back sides of the etched wafer are polished using a double sided polishing apparatus so that the front side is a mirror surface and an unevenness remains on the back side to distinguish the front and back sides, thereof. The polished wafer is cleaned.
摘要翻译：本发明的目的是提供一种有效地制造防止金属污染的半导体晶片的方法。本发明的另一个目的是提供一种方法，其中晶片的背面不影响其前侧，并且可以区分晶片的正面和背面正在进行抛光。本发明提供了一种有效地制造具有均匀厚度的半导体晶片的方法，其中背面的厚度不影响前侧，并且晶片的前侧能够与背面区分开。将半导体锭切片以获得晶片。晶片的切片表面变平。在碱性蚀刻溶液中蚀刻扁平晶片。使用双面抛光装置对被蚀刻的晶片的正面和背面进行抛光，使得前侧是镜面，并且在背面保留凹凸以区分其正面和背面。抛光的晶圆被清洁。

5. 发明授权

US5963821A Method of making semiconductor wafers 失效
标题翻译：制造半导体晶圆的方法
公开(公告)号：US5963821A
公开(公告)日：1999-10-05
申请号：US960517
申请日：1997-10-29
申请人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
发明人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
IPC分类号： C30B33/10 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： H01L21/02008 , B24B37/08 , C30B33/00 , Y10S438/906 , Y10S438/928 , Y10S438/959 , Y10S438/964 , Y10S438/974 , Y10S438/977
摘要： This invention provides a method for efficiently making semiconductor wafers having uniform thickness where the thickness of the back side does not influence the front side and where the front side of the wafer is capable of being distinguished from the back side. A semiconductor ingot is sliced to obtain wafers. The sliced surfaces of the wafers are flattened. The flattened wafer is etched in alkaline etching solution. Both the front and back sides of the etched wafer are polished using a double sided polishing apparatus so that the front side is a mirror surface and an unevenness remains on the back side to distinguish the front and back sides, thereof. The polished wafer is cleaned.
摘要翻译：本发明提供了一种有效地制造具有均匀厚度的半导体晶片的方法，其中背面的厚度不影响前侧，并且晶片的前侧能够与背面区分开。将半导体锭切片以获得晶片。晶片的切片表面变平。在碱性蚀刻溶液中蚀刻扁平晶片。使用双面抛光装置对被蚀刻的晶片的正面和背面进行抛光，使得前侧是镜面，并且在背面保留凹凸以区分其正面和背面。抛光的晶圆被清洁。

6. 发明授权

US5888685A Electrophotographic photoconductor 失效
标题翻译：电子照相感光体
公开(公告)号：US5888685A
公开(公告)日：1999-03-30
申请号：US881264
申请日：1997-06-24
申请人： Masami Kuroda , Ayako Tutui , Yoshimasa Tomiuchi , Kenji Kawate
发明人： Masami Kuroda , Ayako Tutui , Yoshimasa Tomiuchi , Kenji Kawate
IPC分类号： G03G5/06 , G03G5/09
CPC分类号： G03G5/067 , G03G5/0629 , G03G5/0674
摘要： An electrophotographic photoconductor contains at least a furan derivate or a thiophene derivate as the charge transport agent in a photoconductive layer thereof.
摘要翻译：电子照相感光体在其光电导层中至少含有呋喃衍生物或噻吩衍生物作为电荷输送剂。

7. 发明授权

US4288261A Method for the heat treatment of aluminum strip 失效
标题翻译：铝条热处理方法
公开(公告)号：US4288261A
公开(公告)日：1981-09-08
申请号：US57474
申请日：1979-07-13
申请人： Hiromu Yoshimoto , Michitoshi Okumura , Kenji Kawate
发明人： Hiromu Yoshimoto , Michitoshi Okumura , Kenji Kawate
IPC分类号： C21D9/63 , C22F1/04
CPC分类号： C22F1/04 , C21D9/63
摘要： During the process in which an aluminum strip is moved in a floating mode, the strip is first heated, then cooled and annealed. When the aluminum strip is cooled, the strip is moved while being curved into a wave-like form toward the moving direction thereof. The aluminum strip is curved in a manner as described, and as a result, the aluminum strip increases in antibuckling stress. The increased antibuckling stress overcomes a thermal stress produced in the direction of the width of the aluminum strip during the process of cooling. Accordingly, the aluminum strip is cooled without formation of wrinkle parallel to the longitudinal direction of the strip.
摘要翻译：在铝条以浮动模式移动的过程中，首先将条带加热，然后冷却并退火。当铝条被冷却时，条带沿着其移动方向弯曲成波状形状移动。铝条以所述的方式弯曲，结果，铝带的抗皱应力增加。增加的抗皱应力克服了在冷却过程中铝带的宽度方向产生的热应力。因此，铝条被冷却而不形成平行于条的纵向的褶皱。

8. 发明授权

US4496312A Heat-treatment system and process 失效
标题翻译：热处理系统和工艺
公开(公告)号：US4496312A
公开(公告)日：1985-01-29
申请号：US502779
申请日：1983-06-01
申请人： Shunsuke Yamada , Kenji Kawate , Takashi Ono , Hideo Arakawa , Tsuyoshi Suda
发明人： Shunsuke Yamada , Kenji Kawate , Takashi Ono , Hideo Arakawa , Tsuyoshi Suda
IPC分类号： C21D1/00 , B23Q7/14 , C21D1/32 , C21D9/00 , F27B9/16 , F27D3/00 , F27B9/02
CPC分类号： F27B9/16 , C21D1/32 , C21D9/0037
摘要： Inside a furnace body a number of material-stay spaces are set along a predetermined circular locus of travel of materials to be treated. The furnace body is divided into a heating chamber and a cooling chamber, and some of the stay spaces are located in the former chamber while the others are in the latter. A material is placed into one of the stay spaces located in the heating chamber, and heated therein. Then the material is moved into and stopped at one of the stay spaces located in the cooling chamber, and cooled therein. This process of heating and cooling the material is repeated a predetermined number of times so as to treat the material as desired.
摘要翻译：在炉体内，沿着要处理的材料的预定的行进轨迹设置许多材料停留空间。炉体分为加热室和冷却室，一些停留空间位于前室中，而其余位于后室。将材料放置在位于加热室中的一个停留空间中，并在其中加热。然后将材料移入并停在位于冷却室中的一个停留空间中，并在其中冷却。将该材料的加热和冷却过程重复预定次数，以便根据需要处理该材料。

9. 发明授权

US4401484A Method for heat treatment of metal strips 失效
标题翻译：金属条热处理方法
公开(公告)号：US4401484A
公开(公告)日：1983-08-30
申请号：US225224
申请日：1981-01-15
申请人： Hiromu Yoshimoto , Michitoshi Okumura , Kenji Kawate
发明人： Hiromu Yoshimoto , Michitoshi Okumura , Kenji Kawate
IPC分类号： C21D9/56 , C21D9/63 , C22F1/00 , C22F1/04
CPC分类号： C21D9/63
摘要： A method for the heat treatment of metal strips which comprises heating and cooling a metal strip while allowing the strip to pass through a heat treatment apparatus in a floating manner. When passing through the apparatus in such a manner, the strip is curved in the wave forms in the direction of feed thereof. Such curvatures given to the strip increase the resistance of the strip against buckling stress. The increased resistance of the strip against buckling stress is stronger than the thermal stress produced therein during the heating and cooling treatment so that the strip can be heated and cooled without any wrinkles produced therein.
摘要翻译：一种用于热处理金属带的方法，其包括加热和冷却金属条，同时允许条以浮动方式通过热处理装置。当以这种方式穿过设备时，条带沿其进给方向以波形弯曲。赋予带材的这种曲率增加了带材抗弯曲应力的阻力。条带对抗弯曲应力的增加的阻力比在加热和冷却处理期间产生的热应力强得多，使得条可以被加热和冷却而没有其中产生任何皱纹。

10. 发明授权

US5899731A Method of fabricating a semiconductor wafer 失效
标题翻译：制造半导体晶片的方法
公开(公告)号：US5899731A
公开(公告)日：1999-05-04
申请号：US927034
申请日：1997-09-10
申请人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
发明人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
IPC分类号： H01L21/308 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/306 , C02F1/461
CPC分类号： H01L21/02052 , C30B33/00 , H01L21/02008
摘要： A method of fabricating a semiconductor wafers, which can prevent metal contamination when alkali etching is used. A semiconductor ingot is cut into wafers. The peripheral portion of the sliced wafers is chamfered. The chamfered wafers are then planarized by lapping. The planarized wafers are alkali etched. The alkali etched wafers are subjected to acid washing by using diluted mixed acid solution. The surface of the acid-washed wafers are then polished. The polished wafers are washed again.
摘要翻译：一种制造半导体晶片的方法，其可以在使用碱蚀刻时防止金属污染。将半导体晶锭切成晶圆。切片晶片的周边部分被倒角。然后通过研磨将倒角的晶片平坦化。平面化的晶片是碱蚀刻的。通过使用稀释的混合酸溶液对碱蚀刻的晶片进行酸洗。然后将酸洗晶片的表面抛光。抛光的晶片再次被洗涤。

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