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1. 发明授权

US08415241B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US08415241B2
公开(公告)日：2013-04-09
申请号：US13349293
申请日：2012-01-12
申请人： Shunsuke Yamada
发明人： Shunsuke Yamada
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/0485 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/66901 , H01L29/808
摘要： A silicon carbide substrate having a substrate surface is prepared. An insulating film is formed to cover a part of the substrate surface. A contact electrode is formed on the substrate surface, so as to be in contact with the insulating film. The contact electrode contains Al, Ti, and Si atoms. The contact electrode includes an alloy film made of an alloy containing Al atoms and at least any of Si atoms and Ti atoms. The contact electrode is annealed such that the silicon carbide substrate and the contact electrode establish ohmic connection with each other. Thus, in a case where a contact electrode having Al atoms is employed, insulation reliability of the insulating film can be improved.
摘要翻译：准备具有基板表面的碳化硅基板。形成绝缘膜以覆盖基板表面的一部分。接触电极形成在基板表面上，以便与绝缘膜接触。接触电极含有Al，Ti和Si原子。接触电极包括由包含Al原子并且至少Si原子和Ti原子中的任一种的合金制成的合金膜。接触电极退火，使得碳化硅衬底和接触电极彼此建立欧姆连接。因此，在使用具有Al原子的接触电极的情况下，可以提高绝缘膜的绝缘可靠性。

2. 发明申请

US20120315746A1 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20120315746A1
公开(公告)日：2012-12-13
申请号：US13489152
申请日：2012-06-05
申请人： Shunsuke YAMADA , Takeyoshi MASUDA
发明人： Shunsuke YAMADA , Takeyoshi MASUDA
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/0465 , H01L21/31116 , H01L29/1608 , H01L29/518 , H01L29/66068
摘要： An impurity of a first conductivity type is implanted onto a silicon carbide substrate through an opening in a mask layer. First and second films made of first and second materials respectively are formed. It is sensed that etching of the first material is performed during anisotropic etching, and then anisotropic etching is stopped. An impurity of a second conductivity type is implanted onto the silicon carbide substrate through the opening narrowed by the first and second films. Thus, the impurity regions can be formed in an accurately self-aligned manner.
摘要翻译：通过掩模层中的开口将第一导电类型的杂质注入到碳化硅衬底上。分别形成由第一和第二材料制成的第一和第二薄膜。感测到在各向异性蚀刻期间进行第一材料的蚀刻，然后停止各向异性蚀刻。通过第一和第二薄膜变窄的开口将第二导电类型的杂质注入到碳化硅衬底上。因此，可以精确地自对准地形成杂质区域。

3. 发明授权

US4496312A Heat-treatment system and process 失效
标题翻译：热处理系统和工艺
公开(公告)号：US4496312A
公开(公告)日：1985-01-29
申请号：US502779
申请日：1983-06-01
申请人： Shunsuke Yamada , Kenji Kawate , Takashi Ono , Hideo Arakawa , Tsuyoshi Suda
发明人： Shunsuke Yamada , Kenji Kawate , Takashi Ono , Hideo Arakawa , Tsuyoshi Suda
IPC分类号： C21D1/00 , B23Q7/14 , C21D1/32 , C21D9/00 , F27B9/16 , F27D3/00 , F27B9/02
CPC分类号： F27B9/16 , C21D1/32 , C21D9/0037
摘要： Inside a furnace body a number of material-stay spaces are set along a predetermined circular locus of travel of materials to be treated. The furnace body is divided into a heating chamber and a cooling chamber, and some of the stay spaces are located in the former chamber while the others are in the latter. A material is placed into one of the stay spaces located in the heating chamber, and heated therein. Then the material is moved into and stopped at one of the stay spaces located in the cooling chamber, and cooled therein. This process of heating and cooling the material is repeated a predetermined number of times so as to treat the material as desired.
摘要翻译：在炉体内，沿着要处理的材料的预定的行进轨迹设置许多材料停留空间。炉体分为加热室和冷却室，一些停留空间位于前室中，而其余位于后室。将材料放置在位于加热室中的一个停留空间中，并在其中加热。然后将材料移入并停在位于冷却室中的一个停留空间中，并在其中冷却。将该材料的加热和冷却过程重复预定次数，以便根据需要处理该材料。

4. 发明授权

US08647776B2 Carbon material for lithium ion secondary battery 有权
标题翻译：锂离子二次电池用碳素材料
公开(公告)号：US08647776B2
公开(公告)日：2014-02-11
申请号：US13214356
申请日：2011-08-22
申请人： Shunsuke Yamada , Keita Yamaguchi , Taisuke Nose , Hideharu Sato
发明人： Shunsuke Yamada , Keita Yamaguchi , Taisuke Nose , Hideharu Sato
IPC分类号： H01M4/583 , C01B31/04
CPC分类号： H01M4/133 , C01B32/05 , C01B32/20 , C01P2002/82 , C01P2004/51 , C01P2006/11 , C01P2006/12 , C01P2006/20 , H01M4/1393 , H01M4/587 , H01M10/0525
摘要： To provide a negative electrode material capable of giving a lithium ion secondary battery that is sufficiently small in the charge/discharge irreversible capacity observed at the initial cycle stage, has excellent high-temperature storage characteristics, and reduced in the gas generation at the initial cycle stage as well as during high-temperature storage.A carbon material for lithium ion secondary battery, wherein the surface functional group amount O/C value represented by the following formula 1 is from 1 to 4% and the sum (Cl/C+S165/C) of the surface functional group amount Cl/C value represented by the following formula 2 and the surface functional group amount S165/C value represented by the following formula 3 is from 0.05 to 0.5%: O/C value (%)=O atom concentration determined based on the peak area of the spectrum of O1s in X-ray photoelectron spectroscopy (XPS) analysis/C atom concentration determined based on the peak area of the spectrum of C1s in XPS analysis×100 Formula 1: Cl/C value (%)=Cl atom concentration determined based on the peak area of the spectrum of Cl2p in XPS analysis/C atom concentration determined based on the peak area of the spectrum of C1s in XPS analysis×100 Formula 2: S165/C value (%)=S165 atom concentration based on the peak area of the peak near 165 eV in the spectrum corresponding to S2p in XPS analysis/C atom concentration determined based on the peak area of the spectrum of C1s in XPS analysis×100 Formula 3.
摘要翻译：为了提供能够提供在初始循环阶段观察到的充放电不可逆容量足够小的锂离子二次电池的负极材料，具有优异的高温储存特性，并且在初始循环中减少了气体产生阶段以及高温储存期间。一种锂离子二次电池用碳材料，其中由下式1表示的表面官能团量O / C值为1〜4％，表面官能团量Cl（C 1 / C 6）由下式2表示的/ C值和由下式3表示的表面官能团量S165 / C值为0.05〜0.5％：O / C值（％）=基于峰面积确定的O原子浓度基于XPS分析中的C1s光谱的峰面积确定的X射线光电子能谱（XPS）分析中的O1的光谱/ C原子浓度×100方法1：Cl / C值（％）=基于基于XPS分析中的C1s谱的峰面积确定的XPS分析/ C原子浓度中的Cl2p的峰面积×100第2：S165 / C值（％）= S165原子浓度，基于峰面积在XPS分析中对应于S2p的光谱中，165 eV附近的峰值基于XPS分析中的C1s光谱的峰面积确定sis / C原子浓度×100第3期。

5. 发明申请

US20110200888A1 NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY 审中-公开
标题翻译：非水电解质二次电池
公开(公告)号：US20110200888A1
公开(公告)日：2011-08-18
申请号：US13125242
申请日：2010-08-03
申请人： Yoshiyuki Ozaki , Shinji Kasamatsu , Hideharu Sato , Shunsuke Yamada
发明人： Yoshiyuki Ozaki , Shinji Kasamatsu , Hideharu Sato , Shunsuke Yamada
IPC分类号： H01M10/056 , H01M4/133
CPC分类号： H01M4/133 , H01M4/587 , H01M10/0525 , H01M10/0569
摘要： An object is to provide a high capacity non-aqueous electrolyte secondary battery in which decomposition of propylene carbonate is suppressed. The non-aqueous electrolyte secondary battery includes: a negative electrode including graphite particles as a negative electrode active material; a positive electrode; a separator; and a non-aqueous electrolyte including propylene carbonate as a non-aqueous solvent. Each of the graphite particles has a surface portion including an amorphous region and a crystal region which includes a plurality of carbon hexagonal net planes stacked along a surface of the graphite particle. Ends of the stacked carbon hexagonal net planes form loops exposed on the surface of the graphite particle. At least a part of the loops are stacked, and the average number of the loops stacked is more than 1 and not more than 2.
摘要翻译：目的在于提供抑制碳酸丙烯酯分解的高容量非水电解质二次电池。非水电解质二次电池包括：负极，其包含作为负极活性物质的石墨粒子; 正极; 分隔符以及包含碳酸亚丙酯作为非水溶剂的非水电解质。每个石墨颗粒具有包括非晶区域的表面部分和包括沿着石墨颗粒的表面堆叠的多个碳六方网平面的晶体区域。堆积的碳六角网平面的端部形成露出在石墨颗粒表面上的环。至少一部分环被堆叠，并且堆积的环的平均数大于1且不大于2。

6. 发明授权

US07135232B2 Thermal conductive composition, a heat dissipating putty sheet and heat dissipating structure using the same 有权
标题翻译：导热组合物，散热腻子片和使用其的散热结构
公开(公告)号：US07135232B2
公开(公告)日：2006-11-14
申请号：US10874124
申请日：2004-06-22
申请人： Shunsuke Yamada , Masakazu Hattori , Hajime Funahashi
发明人： Shunsuke Yamada , Masakazu Hattori , Hajime Funahashi
IPC分类号： B32B9/01
CPC分类号： C08L83/04 , C08G77/20 , C08K3/013 , C08K3/014 , C08K3/14 , C08K3/22 , Y10T428/24479 , Y10T428/31663 , C08L83/00
摘要： The present invention provides a thermal conductive composition formed by blending a thermal conductive filler of not less than 600 mass parts to 100 mass parts of a liquid silicone having a viscosity in a range of 20 to 2000 mPa·s. Since the thermal conductive composition is not crosslinked further or cured at a normal temperature of 25° C., it keeps a putty state, and the thermal conductivity is not less than 3 W/m·K. A heat-dissipating putty sheet according to the present invention is formed by applying the thus obtained thermal conductive composition onto a release sheet. The heat-dissipating putty sheet having a thickness ranging from 0.5 mm to 3 mm can be released manually from a release base, or it can be transferred from a release sheet to a heat-generating part or a dissipator so as to be attached to a desired position easily.
摘要翻译：本发明提供一种导热组合物，其通过将粘度为20〜2000mPa·s的不低于600质量份的导热性填料与100质量份的液态硅酮混合而成。由于导热组合物在25℃的常温下不进一步交联或固化，因此保持腻子状态，导热率不低于3W / m·K。通过将这样得到的导热性组合物涂布在剥离片上，形成本发明的散热腻子片。可以从脱模基板手动释放厚度范围为0.5mm至3mm的散热腻子片，或者可以从脱模片转移到发热部件或散发器，以便附着到期望的位置容易。

7. 发明授权

US08796123B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US08796123B2
公开(公告)日：2014-08-05
申请号：US13489152
申请日：2012-06-05
申请人： Shunsuke Yamada , Takeyoshi Masuda
发明人： Shunsuke Yamada , Takeyoshi Masuda
IPC分类号： H01L21/425
CPC分类号： H01L29/7802 , H01L21/0465 , H01L21/31116 , H01L29/1608 , H01L29/518 , H01L29/66068
摘要： An impurity of a first conductivity type is implanted onto a silicon carbide substrate through an opening in a mask layer. First and second films made of first and second materials respectively are formed. It is sensed that etching of the first material is performed during anisotropic etching, and then anisotropic etching is stopped. An impurity of a second conductivity type is implanted onto the silicon carbide substrate through the opening narrowed by the first and second films. Thus, the impurity regions can be formed in an accurately self-aligned manner.
摘要翻译：通过掩模层中的开口将第一导电类型的杂质注入到碳化硅衬底上。分别形成由第一和第二材料制成的第一和第二薄膜。感测到在各向异性蚀刻期间进行第一材料的蚀刻，然后停止各向异性蚀刻。通过第一和第二薄膜变窄的开口将第二导电类型的杂质注入到碳化硅衬底上。因此，可以精确地自对准地形成杂质区域。

8. 发明申请

US20120184094A1 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20120184094A1
公开(公告)日：2012-07-19
申请号：US13349293
申请日：2012-01-12
申请人： Shunsuke YAMADA
发明人： Shunsuke YAMADA
IPC分类号： H01L21/28
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/0485 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/66901 , H01L29/808
摘要： A silicon carbide substrate having a substrate surface is prepared. An insulating film is formed to cover a part of the substrate surface. A contact electrode is formed on the substrate surface, so as to be in contact with the insulating film. The contact electrode contains Al, Ti, and Si atoms. The contact electrode includes an alloy film made of an alloy containing Al atoms and at least any of Si atoms and Ti atoms. The contact electrode is annealed such that the silicon carbide substrate and the contact electrode establish ohmic connection with each other. Thus, in a case where a contact electrode having Al atoms is employed, insulation reliability of the insulating film can be improved.
摘要翻译：准备具有基板表面的碳化硅基板。形成绝缘膜以覆盖基板表面的一部分。接触电极形成在基板表面上，以便与绝缘膜接触。接触电极含有Al，Ti和Si原子。接触电极包括由包含Al原子并且至少Si原子和Ti原子中的任一种的合金制成的合金膜。接触电极退火，使得碳化硅衬底和接触电极彼此建立欧姆连接。因此，在使用具有Al原子的接触电极的情况下，可以提高绝缘膜的绝缘可靠性。

9. 发明申请

US20120070733A1 CARBON MATERIAL FOR LITHIUM ION SECONDARY BATTERY 有权
标题翻译：用于锂离子二次电池的碳材料
公开(公告)号：US20120070733A1
公开(公告)日：2012-03-22
申请号：US13214356
申请日：2011-08-22
申请人： Shunsuke Yamada , Keita Yamaguchi , Taisuke Nose , Hideharu Sato
发明人： Shunsuke Yamada , Keita Yamaguchi , Taisuke Nose , Hideharu Sato
IPC分类号： H01M4/583 , H01M4/64
CPC分类号： H01M4/133 , C01B32/05 , C01B32/20 , C01P2002/82 , C01P2004/51 , C01P2006/11 , C01P2006/12 , C01P2006/20 , H01M4/1393 , H01M4/587 , H01M10/0525
摘要： To provide a negative electrode material capable of giving a lithium ion secondary battery that is sufficiently small in the charge/discharge irreversible capacity observed at the initial cycle stage, has excellent high-temperature storage characteristics, and reduced in the gas generation at the initial cycle stage as well as during high-temperature storage.A carbon material for lithium ion secondary battery, wherein the surface functional group amount O/C value represented by the following formula 1 is from 1 to 4% and the sum (Cl/C+S165/C) of the surface functional group amount Cl/C value represented by the following formula 2 and the surface functional group amount S165/C value represented by the following formula 3 is from 0.05 to 0.5%:Formula 1: O/C value (%)=O atom concentration determined based on the peak area of the spectrum of O1s in X-ray photoelectron spectroscopy (XPS) analysis/C atom concentration determined based on the peak area of the spectrum of C1s in XPS analysis×100 Formula 2: Cl/C value (%)=Cl atom concentration determined based on the peak area of the spectrum of Cl2p in XPS analysis/C atom concentration determined based on the peak area of the spectrum of C1s in XPS analysis×100 Formula 3: S165/C value (%)=S165 atom concentration based on the peak area of the peak near 165 eV in the spectrum corresponding to S2p in XPS analysis/C atom concentration determined based on the peak area of the spectrum of C1s in XPS analysis×100.
摘要翻译：为了提供能够提供在初始循环阶段观察到的充放电不可逆容量足够小的锂离子二次电池的负极材料，具有优异的高温储存特性，并且在初始循环中减少了气体产生阶段以及高温储存期间。一种锂离子二次电池用碳材料，其中由下式1表示的表面官能团量O / C值为1〜4％，表面官能团量Cl（C 1 / C 6） / C值，由下式3表示的表面官能团量S165 / C值为0.05〜0.5％：式1：O / C值（％）=基于 X射线光电子能谱（XPS）分析中的O1谱的峰面积/基于XPS分析中的C1s的光谱峰面积确定的C原子浓度×100式2：Cl / C值（％）= Cl原子基于XPS分析中的C1s谱的峰面积确定的XPS分析/ C原子浓度中的Cl2p的峰面积确定的浓度×100式3：S165 / C值（％）= S165原子浓度在对应于S2p的光谱中，在165eV附近的峰的峰面积在XPS分析中，基于XPS分析中C1s的光谱峰面积确定的X原子浓度×100。

10. 发明授权

US07018701B2 Thermally conductive sheet and method for manufacturing the same 失效
标题翻译：导热片及其制造方法
公开(公告)号：US07018701B2
公开(公告)日：2006-03-28
申请号：US10455460
申请日：2003-06-04
申请人： Shunsuke Yamada , Hajime Funahashi , Junzo Shiomi
发明人： Shunsuke Yamada , Hajime Funahashi , Junzo Shiomi
IPC分类号： B32B3/10 , B32B27/32 , C08K3/22 , C08K3/14 , H05K7/20
CPC分类号： H01L23/3737 , B32B7/06 , H01L2924/0002 , Y10T428/24314 , Y10T428/24322 , Y10T428/24331 , Y10T428/31855 , Y10T428/31931 , Y10T428/31938 , H01L2924/00
摘要： A thermally conductive sheet includes a polyolefin elastomer mixed with a thermally conductive filler. The amount of volatile organic gas generated from the sheet is not more than 1000 μg/cm2 per unit surface area. The amount of volatile corrosive gas generated from the sheet is not more than 10 μg/cm2 per unit surface area. The sheet has a thermal conductivity of 0.5 to 20 W/m·K. This thermally conductive sheet generates fewer volatile substances and can be used even in a closed place.
摘要翻译：导热片包括与导热填料混合的聚烯烃弹性体。从片材产生的挥发性有机气体的量不大于每单位表面积的1000m 2 / cm 2。从片材产生的挥发性腐蚀性气体的量不大于每单位表面积的10mug / cm 2。该片具有0.5至20W / m.K的热导率。这种导热片产生较少的挥发性物质，甚至可以在封闭的地方使用。

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