专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5899743A Method for fabricating semiconductor wafers 失效
标题翻译：制造半导体晶圆的方法
公开(公告)号：US5899743A
公开(公告)日：1999-05-04
申请号：US705155
申请日：1996-08-29
申请人： Fumitaka Kai , Masahiko Maeda , Jun-ichi Yamashita , Toshiharu Yubitani , Hirofumi Hajime , Takamitsu Harada
发明人： Fumitaka Kai , Masahiko Maeda , Jun-ichi Yamashita , Toshiharu Yubitani , Hirofumi Hajime , Takamitsu Harada
IPC分类号： B24B37/04 , C30B33/00 , H01L21/302 , H01L21/306 , H01L21/304
CPC分类号： H01L21/02008 , B24B37/042 , B24B37/08 , C30B33/00 , Y10S438/906 , Y10S438/928 , Y10S438/974
摘要： A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.
摘要翻译：公开了一种在不使用高蚀刻速率的化学溶液的情况下有效地制造具有良好平坦化的半导体晶片的方法该方法将单晶锭切成晶片。每个晶片的边缘被倒角。进行研磨步骤以使倒角晶片平坦化。然后抛光晶片的两个侧表面。接下来，晶片表面被镜面抛光。最后，清洁晶片。

2. 发明授权

US6162730A Method for fabricating semiconductor wafers 有权
标题翻译：制造半导体晶圆的方法
公开(公告)号：US6162730A
公开(公告)日：2000-12-19
申请号：US249142
申请日：1999-02-12
申请人： Fumitaka Kai , Masahiko Maeda , Jun-ichi Yamashita , Toshiharu Yubitani , Hirofumi Hajime , Takamitsu Harada
发明人： Fumitaka Kai , Masahiko Maeda , Jun-ichi Yamashita , Toshiharu Yubitani , Hirofumi Hajime , Takamitsu Harada
IPC分类号： B24B1/00 , B28D5/00 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/461
CPC分类号： H01L21/02008 , B24B37/042 , B24B37/08 , C30B33/00 , Y10S438/928 , Y10S438/974
摘要： A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping or grinding step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.
摘要翻译：公开了一种在不使用高蚀刻速率的化学溶液的情况下有效地制造具有良好平坦化的半导体晶片的方法该方法将单晶锭切成晶片。每个晶片的边缘被倒角。进行研磨或磨削步骤以使倒角晶片平坦化。然后抛光晶片的两个侧表面。接下来，晶片表面被镜面抛光。最后，清洁晶片。

3. 发明授权

US5747364A Method of making semiconductor wafers and semiconductor wafers made thereby 失效
标题翻译：由此制造半导体晶片和半导体晶片的方法
公开(公告)号：US5747364A
公开(公告)日：1998-05-05
申请号：US824301
申请日：1997-03-26
申请人： Nobuyuki Akiyama , Fumitaka Kai , Masahiko Maeda , Hirofumi Hajime , Naoki Yamada
发明人： Nobuyuki Akiyama , Fumitaka Kai , Masahiko Maeda , Hirofumi Hajime , Naoki Yamada
IPC分类号： B28D5/00 , C30B33/00 , H01L21/304 , H01L21/322 , H01L21/302
CPC分类号： H01L21/02008 , B28D5/00 , C30B33/00 , Y10S438/974
摘要： A method of making semiconductor wafers can prevent processing strain on peripheral portions of wafers caused by non-wax polishing using a template. This involves mirror chamfering or etching the peripheral portions of the wafers after the non-wax polishing step.
摘要翻译：制造半导体晶片的方法可以防止由使用模板的非蜡抛光引起的晶片的周边部分的加工应变。这在非蜡抛光步骤之后涉及镜面倒角或蚀刻晶片的周边部分。

4. 发明授权

US5899731A Method of fabricating a semiconductor wafer 失效
标题翻译：制造半导体晶片的方法
公开(公告)号：US5899731A
公开(公告)日：1999-05-04
申请号：US927034
申请日：1997-09-10
申请人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
发明人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
IPC分类号： H01L21/308 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/306 , C02F1/461
CPC分类号： H01L21/02052 , C30B33/00 , H01L21/02008
摘要： A method of fabricating a semiconductor wafers, which can prevent metal contamination when alkali etching is used. A semiconductor ingot is cut into wafers. The peripheral portion of the sliced wafers is chamfered. The chamfered wafers are then planarized by lapping. The planarized wafers are alkali etched. The alkali etched wafers are subjected to acid washing by using diluted mixed acid solution. The surface of the acid-washed wafers are then polished. The polished wafers are washed again.
摘要翻译：一种制造半导体晶片的方法，其可以在使用碱蚀刻时防止金属污染。将半导体晶锭切成晶圆。切片晶片的周边部分被倒角。然后通过研磨将倒角的晶片平坦化。平面化的晶片是碱蚀刻的。通过使用稀释的混合酸溶液对碱蚀刻的晶片进行酸洗。然后将酸洗晶片的表面抛光。抛光的晶片再次被洗涤。

5. 发明授权

US6043156A Method of making semiconductor wafers 失效
标题翻译：制造半导体晶圆的方法
公开(公告)号：US6043156A
公开(公告)日：2000-03-28
申请号：US960000
申请日：1997-10-29
申请人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
发明人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
IPC分类号： H01L21/304 , C30B33/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/02008 , C30B33/00
摘要： It is an object of the present invention to provide a method for efficiently making semiconductor wafers that prevents the production of metal pollution. It is another object of the present invention to provide a method where the back side of the wafer does not influence the front side, thereof, and where the front and back sides of the wafer can be distinguished are polishing.This invention provides a method for efficiently making semiconductor wafers having uniform thickness where the thickness of the back side does not influence the front side and where the front side of the wafer is capable of being distinguished from the back side. A semiconductor ingot is sliced to obtain wafers. The sliced surfaces of the wafers are flattened. The flattened wafer is etched in alkaline etching solution. Both the front and back sides of the etched wafer are polished using a double sided polishing apparatus so that the front side is a mirror surface and an unevenness remains on the back side to distinguish the front and back sides, thereof. The polished wafer is cleaned.
摘要翻译：本发明的目的是提供一种有效地制造防止金属污染的半导体晶片的方法。本发明的另一个目的是提供一种方法，其中晶片的背面不影响其前侧，并且可以区分晶片的正面和背面正在进行抛光。本发明提供了一种有效地制造具有均匀厚度的半导体晶片的方法，其中背面的厚度不影响前侧，并且晶片的前侧能够与背面区分开。将半导体锭切片以获得晶片。晶片的切片表面变平。在碱性蚀刻溶液中蚀刻扁平晶片。使用双面抛光装置对被蚀刻的晶片的正面和背面进行抛光，使得前侧是镜面，并且在背面保留凹凸以区分其正面和背面。抛光的晶圆被清洁。

6. 发明授权

US5963821A Method of making semiconductor wafers 失效
标题翻译：制造半导体晶圆的方法
公开(公告)号：US5963821A
公开(公告)日：1999-10-05
申请号：US960517
申请日：1997-10-29
申请人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
发明人： Fumitaka Kai , Masahiko Maeda , Kenji Kawate
IPC分类号： C30B33/10 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： H01L21/02008 , B24B37/08 , C30B33/00 , Y10S438/906 , Y10S438/928 , Y10S438/959 , Y10S438/964 , Y10S438/974 , Y10S438/977
摘要： This invention provides a method for efficiently making semiconductor wafers having uniform thickness where the thickness of the back side does not influence the front side and where the front side of the wafer is capable of being distinguished from the back side. A semiconductor ingot is sliced to obtain wafers. The sliced surfaces of the wafers are flattened. The flattened wafer is etched in alkaline etching solution. Both the front and back sides of the etched wafer are polished using a double sided polishing apparatus so that the front side is a mirror surface and an unevenness remains on the back side to distinguish the front and back sides, thereof. The polished wafer is cleaned.
摘要翻译：本发明提供了一种有效地制造具有均匀厚度的半导体晶片的方法，其中背面的厚度不影响前侧，并且晶片的前侧能够与背面区分开。将半导体锭切片以获得晶片。晶片的切片表面变平。在碱性蚀刻溶液中蚀刻扁平晶片。使用双面抛光装置对被蚀刻的晶片的正面和背面进行抛光，使得前侧是镜面，并且在背面保留凹凸以区分其正面和背面。抛光的晶圆被清洁。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式