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    • 5. 发明授权
    • Inspection apparatus, probe card and inspection method
    • 检验仪器,探针卡及检验方法
    • US07586317B2
    • 2009-09-08
    • US12174014
    • 2008-07-16
    • Shigekazu KomatsuDai ShinozakiKatsuaki Sakamoto
    • Shigekazu KomatsuDai ShinozakiKatsuaki Sakamoto
    • G01R1/073
    • G01R31/2886G01R1/06766G01R31/31926
    • By allowing an electrical conduction between a probe and an electrode by a fritting phenomenon before inspection, simplification of circuit configuration and shortening of inspection time is achieved. A fritting circuit is formed in a probe card of an inspection apparatus for each probe pair consisting of two probes. A capacitor is connected to each fritting circuit. Each fritting circuit is connected in parallel to a power supply circuit having a charging power supply. Each capacitor is charged at one time by the power supply circuit. The probe pair is brought into contact with an electrode of a wafer, and a high-voltage is applied to the probe pair by a power charged in the capacitor, thereby achieving an electrical connection between each probe and the electrode by a fritting phenomenon. Then, an inspection of electrical characteristics is performed by using an electric inspection signal transmitted to each probe.
    • 通过在检查之前通过烧结现象允许探针和电极之间的导电,实现电路结构的简化和检查时间的缩短。 在由两个探针组成的每个探针对的检查装置的探针卡中形成烧结电路。 电容器连接到每个熔接电路。 每个熔接电路与具有充电电源的电源电路并联连接。 每个电容器由电源电路一次充电。 使探针对与晶片的电极接触,并且通过在电容器中充电的电力将高电压施加到探针对,从而通过烧结现象实现每个探针与电极之间的电连接。 然后,通过使用发送到每个探针的电检查信号来执行电特性的检查。
    • 6. 发明申请
    • Method for evaluating semiconductor device
    • 半导体器件评估方法
    • US20110050269A1
    • 2011-03-03
    • US12805273
    • 2010-07-21
    • Mitsuyoshi MiyazonoShigekazu KomatsuDai ShinozakiMasahiro KatoAtsushi Yoshida
    • Mitsuyoshi MiyazonoShigekazu KomatsuDai ShinozakiMasahiro KatoAtsushi Yoshida
    • G01R31/26
    • H01L22/20G01R31/2831H01L22/14
    • A yield and productivity of a semiconductor module are improved. A sheet having electrical conductivity is fixed to a main surface of a semiconductor substrate on which a plurality of semiconductor devices having a surface structure and a rear surface electrode are arranged. The semiconductor substrate is divided into semiconductor chips on a first support stage in the state where the sheet is fixed to its main surface. The plurality of divided semiconductor chips are mounted on a second support stage via the sheet and further, the plurality of mounted semiconductor chips are continuously subjected to a dynamic characteristic test on the second support stage. The proposed semiconductor device evaluation method permits a fissure growing and propagating from a crack occurring in the dynamic characteristic test of the vertical semiconductor devices to be suppressed, and the yield and productivity of the semiconductor module to be improved.
    • 提高半导体模块的产量和生产率。 具有导电性的片材固定在其上布置有多个具有表面结构的半导体器件和背面电极的半导体衬底的主表面上。 半导体衬底在片材固定到其主表面的状态下在第一支撑台上分成半导体芯片。 多个划分的半导体芯片通过片材安装在第二支撑台上,并且多个安装的半导体芯片在第二支撑台上连续进行动态特性测试。 所提出的半导体器件评估方法允许抑制在垂直半导体器件的动态特性测试中发生的裂纹的裂缝生长和传播,并且提高半导体模块的产量和生产率。
    • 9. 发明授权
    • Method for evaluating semiconductor device
    • 半导体器件评估方法
    • US08471585B2
    • 2013-06-25
    • US12805273
    • 2010-07-21
    • Mitsuyoshi MiyazonoShigekazu KomatsuDai ShinozakiMasahiro KatoAtsushi Yoshida
    • Mitsuyoshi MiyazonoShigekazu KomatsuDai ShinozakiMasahiro KatoAtsushi Yoshida
    • G01R31/26
    • H01L22/20G01R31/2831H01L22/14
    • A yield and productivity of a semiconductor module are improved. A sheet having electrical conductivity is fixed to a main surface of a semiconductor substrate on which a plurality of semiconductor devices having a surface structure and a rear surface electrode are arranged. The semiconductor substrate is divided into semiconductor chips on a first support stage in the state where the sheet is fixed to its main surface. The plurality of divided semiconductor chips are mounted on a second support stage via the sheet and further, the plurality of mounted semiconductor chips are continuously subjected to a dynamic characteristic test on the second support stage. The proposed semiconductor device evaluation method permits a fissure growing and propagating from a crack occurring in the dynamic characteristic test of the vertical semiconductor devices to be suppressed, and the yield and productivity of the semiconductor module to be improved.
    • 提高半导体模块的产量和生产率。 具有导电性的片材固定在其上布置有多个具有表面结构的半导体器件和背面电极的半导体衬底的主表面上。 半导体衬底在片材固定到其主表面的状态下在第一支撑台上分成半导体芯片。 多个划分的半导体芯片通过片材安装在第二支撑台上,并且多个安装的半导体芯片在第二支撑台上连续进行动态特性测试。 所提出的半导体器件评估方法允许抑制在垂直半导体器件的动态特性测试中发生的裂纹的裂缝生长和传播,并且提高半导体模块的产量和生产率。
    • 10. 发明申请
    • INSPECTION APPARATUS, PROBE CARD AND INSPECTION METHOD
    • 检查装置,检测卡和检查方法
    • US20090021272A1
    • 2009-01-22
    • US12174014
    • 2008-07-16
    • Shigekazu KomatsuDai ShinozakiKatsuaki Sakamoto
    • Shigekazu KomatsuDai ShinozakiKatsuaki Sakamoto
    • G01R1/073
    • G01R31/2886G01R1/06766G01R31/31926
    • By allowing an electrical conduction between a probe and an electrode by a fritting phenomenon before inspection, simplification of circuit configuration and shortening of inspection time is achieved. A fritting circuit is formed in a probe card of an inspection apparatus for each probe pair consisting of two probes. A capacitor is connected to each fritting circuit. Each fritting circuit is connected in parallel to a power supply circuit having a charging power supply. Each capacitor is charged at one time by the power supply circuit. The probe pair is brought into contact with an electrode of a wafer, and a high-voltage is applied to the probe pair by a power charged in the capacitor, thereby achieving an electrical connection between each probe and the electrode by a fritting phenomenon. Then, an inspection of electrical characteristics is performed by using an electric inspection signal transmitted to each probe.
    • 通过在检查之前通过烧结现象允许探针和电极之间的导电,实现电路结构的简化和检查时间的缩短。 在由两个探针组成的每个探针对的检查装置的探针卡中形成烧结电路。 电容器连接到每个熔接电路。 每个熔接电路与具有充电电源的电源电路并联连接。 每个电容器由电源电路一次充电。 使探针对与晶片的电极接触,并且通过在电容器中充电的电力将高电压施加到探针对,从而通过烧结现象实现每个探针与电极之间的电连接。 然后,通过使用发送到每个探针的电检查信号来执行电特性的检查。