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1. 发明申请

US20110233689A1 SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：半导体器件，用于制造半导体器件的工艺，半导体衬底和用于生产半导体衬底的工艺
公开(公告)号：US20110233689A1
公开(公告)日：2011-09-29
申请号：US13133092
申请日：2009-11-27
申请人： Masahiko Hata , Noboru Fukuhara , Hisashi Yamada , Shinichi Takagi , Masakazu Sugiyama , Mitsuru Takenaka , Tetsuji Yasuda , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii , Akihiro Ohtake , Jun Nara
发明人： Masahiko Hata , Noboru Fukuhara , Hisashi Yamada , Shinichi Takagi , Masakazu Sugiyama , Mitsuru Takenaka , Tetsuji Yasuda , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii , Akihiro Ohtake , Jun Nara
IPC分类号： H01L29/78 , H01L29/04 , H01L21/336 , H01L29/20 , H01L21/20
CPC分类号： H01L29/045 , H01L29/20 , H01L29/7833 , H01L29/78681
摘要： There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material.
摘要翻译：提供了一种半导体器件，其包括具有锌闪光体型晶体结构的III-V族化合物半导体，与III-V族化合物半导体的（111）面接触的绝缘材料，相当于（111）面的III-V族化合物半导体，或相对于（111）面或与（111）面相当的面的偏角的平面，和与MIS接触的MIS型电极具有绝缘材料并且包括金属导电材料。

2. 发明授权

US08779471B2 Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer 失效
标题翻译：场效应晶体管，半导体晶片，场效应晶体管的制造方法及半导体晶片的制造方法
公开(公告)号：US08779471B2
公开(公告)日：2014-07-15
申请号：US13413216
申请日：2012-03-06
申请人： Masahiko Hata , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
发明人： Masahiko Hata , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L21/26553 , H01L29/4966 , H01L29/517 , H01L29/66318 , H01L29/66522
摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0
摘要翻译：提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成的In x Ga 1-x As y 1 P 1-y 1（0

3. 发明申请

US20120228673A1 FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER 失效
标题翻译：场效应晶体管，半导体晶体管，生产场效应晶体管的方法和生产半导体晶体管的方法
公开(公告)号：US20120228673A1
公开(公告)日：2012-09-13
申请号：US13413216
申请日：2012-03-06
申请人： Masahiko HATA , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
发明人： Masahiko HATA , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
IPC分类号： H01L29/78 , H01L21/336 , H01L21/20
CPC分类号： H01L29/7786 , H01L21/26553 , H01L29/4966 , H01L29/517 , H01L29/66318 , H01L29/66522
摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0
摘要翻译：提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成的In x Ga 1-x As y 1 P 1-y 1（0

4. 发明授权

US09112035B2 Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate 有权
标题翻译：半导体衬底，场效晶体管，集成电路以及半导体衬底的制造方法
公开(公告)号：US09112035B2
公开(公告)日：2015-08-18
申请号：US13410872
申请日：2012-03-02
申请人： Hisashi Yamada , Masahiko Hata , Masafumi Yokoyama , Mitsuru Takenaka , Shinichi Takagi , Tetsuji Yasuda , Hideki Takagi , Yuji Urabe
发明人： Hisashi Yamada , Masahiko Hata , Masafumi Yokoyama , Mitsuru Takenaka , Shinichi Takagi , Tetsuji Yasuda , Hideki Takagi , Yuji Urabe
IPC分类号： H01L29/02 , H01L29/786 , H01L21/762 , H01L29/49 , H01L29/51 , H01L29/66
CPC分类号： H01L29/78681 , H01L21/76251 , H01L21/76256 , H01L29/4966 , H01L29/517 , H01L29/66742
摘要： A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.
摘要翻译：半导体衬底包括衬底，绝缘层和半导体层。绝缘层在衬底上并与衬底接触。绝缘层包括无定形金属氧化物和无定形金属氮化物中的至少一种。半导体层在绝缘层上方并与之接触。半导体层通过晶体生长形成。

5. 发明申请

US20080026148A1 Film Forming System And Method For Forming Film 审中-公开
标题翻译：成膜系统及成膜方法
公开(公告)号：US20080026148A1
公开(公告)日：2008-01-31
申请号：US10585267
申请日：2004-12-22
申请人： Koji Tominaga , Tetsuji Yasuda , Toshihide Nabatame , Kunihiko Iwamoto
发明人： Koji Tominaga , Tetsuji Yasuda , Toshihide Nabatame , Kunihiko Iwamoto
IPC分类号： C23C16/00
CPC分类号： C23C16/45527 , C23C16/45531 , C23C16/45544
摘要： A throughput during a process of forming a thin film is improved and a thin film of high quality is produced at low cost.For this purpose, a film forming system comprises a chamber 8, a precursory gas supplying line 2 to supply the chamber 8 with precursory gas, a reactive gas supplying line 1 to supply the chamber 8 with reactive gas, and a purge gas supplying line 3 to supply purge gas that purges the precursory gas and the reactive gas, and forms a thin film on a substrate 82 in the chamber 8 by supplying the precursory gas or the reactive gas and purging alternately, and further comprises a middle line 22 having a certain volume that is arranged on a part or all of the precursor supplying line 2 and into which the precursory gas can be filled at a time when the precursory gas is not supplied, and/or a middle line 12 having a certain volume that is arranged on a part or all of the reactive gas supplying line 1 and into which the reactive gas can be filled at a time when the reactive gas is not supplied.
摘要翻译：在形成薄膜的过程中的生产量得到改善，并且以低成本生产高质量的薄膜。为此，成膜系统包括：腔室8，为腔室8提供前兆气体的前体气体供应管线2;向反应气体供应腔室8的反应气体供应管线1;以及吹扫气体供应管线3 以提供吹扫前体气体和反应性气体的吹扫气体，并且通过供应前体气体或反应性气体并交替进行吹扫而在室8中的基板82上形成薄膜，并且还包括具有一定的中间线22的中间线22 配置在前体供给管线2的一部分或全部的体积，并且在不供给前体气体的时候可以填充前体气体的体积，和/或具有一定体积的中间线12 反应气体供应管线1的一部分或全部，并且在不供应反应气体的时候可以填充反应气体。

6. 发明授权

US06596186B2 Mask for the selective growth of a solid, a manufacturing method for the mask, and a method for selectively growing a solid using the mask 有权
公开(公告)号：US06596186B2
公开(公告)日：2003-07-22
申请号：US09917711
申请日：2001-07-31
申请人： Tetsuji Yasuda , Kazuyuki Ikuta , Satoshi Yamasaki , Kazunobu Tanaka , Doo-sup Hwang
发明人： Tetsuji Yasuda , Kazuyuki Ikuta , Satoshi Yamasaki , Kazunobu Tanaka , Doo-sup Hwang
IPC分类号： B44C122
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L31/18 , Y10T428/24926
摘要： A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.

7. 发明授权

US07387686B2 Film formation apparatus 失效
标题翻译：成膜装置
公开(公告)号：US07387686B2
公开(公告)日：2008-06-17
申请号：US10550753
申请日：2004-03-24
申请人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
发明人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
IPC分类号： C23C16/00
CPC分类号： H01L21/3141 , C23C16/45527 , C23C16/45529 , C23C16/56 , H01L21/3143 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691
摘要： A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.
摘要翻译：通过ALD依次形成金属原子层和氧原子层，然后通过RTA（快速热退火）快速加热。重复该步骤循环以形成高介电常数膜。

8. 发明申请

US20070077776A1 Method for forming an insulating film in a semiconductor device 审中-公开
标题翻译：在半导体器件中形成绝缘膜的方法
公开(公告)号：US20070077776A1
公开(公告)日：2007-04-05
申请号：US10550805
申请日：2004-03-18
申请人： Tominaga Koji , Tetsuji Yasuda , Toshihide Nabatame , Kunihiko Iwamoto
发明人： Tominaga Koji , Tetsuji Yasuda , Toshihide Nabatame , Kunihiko Iwamoto
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00
CPC分类号： H01L21/0228 , C23C16/45531 , C23C16/56 , H01L21/02337 , H01L21/0234 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3105 , H01L21/314 , H01L29/517
摘要： This invention provides a method for forming a semiconductor device, capable of preventing as many impurities as possible, which cause deterioration in film quality, from existing in an gate insulating film. In this invention, a step of forming an insulating film so as to have a thickness in the range of 0.3 to 2 nm and a step of removing impurities from the insulating film are repeated a plurality of times, to form an insulating film having a prescribed thickness.
摘要翻译：本发明提供一种形成半导体器件的方法，该方法能够防止存在于栅极绝缘膜中的尽可能多的导致膜质量劣化的杂质。在本发明中，将绝缘膜形成厚度在0.3nm至2nm范围内的步骤和从绝缘膜上除去杂质的步骤重复多次，以形成具有规定的绝缘膜的绝缘膜厚度。

9. 发明申请

US20060180877A1 Semiconductor device, process for producing the same and process for producing metal conmpound thin film 有权
标题翻译：半导体装置及其制造方法以及生产金属薄膜的方法
公开(公告)号：US20060180877A1
公开(公告)日：2006-08-17
申请号：US10550643
申请日：2005-03-24
申请人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
发明人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
IPC分类号： H01L29/94 , H01L21/8238
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.
摘要翻译：具有高氮层，低氮层和高氮层的结构的高介电栅极绝缘膜从硅衬底侧依次层叠。

10. 发明授权

US06747748B2 Manufacturing method for a field-effect transistor, manufacturing method for a semiconductor device, and apparatus therefor 失效
标题翻译：场效晶体管的制造方法，半导体装置的制造方法及其装置
公开(公告)号：US06747748B2
公开(公告)日：2004-06-08
申请号：US09974195
申请日：2001-10-10
申请人： Tatsuo Matsudo , Tomohiro Ohta , Tetsuji Yasuda , Masakazu Ichikawa , Takashi Nakayama
发明人： Tatsuo Matsudo , Tomohiro Ohta , Tetsuji Yasuda , Masakazu Ichikawa , Takashi Nakayama
IPC分类号： G01B1106
CPC分类号： H01L21/67167 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L21/67253 , H01L22/26 , H01L29/511 , H01L29/513 , H01L29/517
摘要： In a process of forming a film on a surface of a wafer by thermal processing, laser light generated by a light source is depolarized by a depolarizer and the deporlarized light is irradiated upon the surface of wafer. As for the light reflected from the surface of wafer, polarization components in predetermined two directions perpendicular to each other are extracted by a beam splitter, and optical sensors receive the extracted light components to detect each intensity. An analytical processing unit determines a thickness of a formed film based on a change in a difference in intensity.
摘要翻译：在通过热处理在晶片的表面上形成膜的过程中，由光源产生的激光由去偏振器去极化，并且去角化的光被照射在晶片的表面上。对于从晶片表面反射的光，通过分束器提取彼此垂直的预定的两个方向的偏振分量，并且光学传感器接收提取的光分量以检测每个强度。分析处理单元基于强度差的变化来确定成膜的厚度。

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