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1. 发明授权

US06703598B2 Semiconductor photo-detecting apparatus 有权
标题翻译：半导体光检测装置
公开(公告)号：US06703598B2
公开(公告)日：2004-03-09
申请号：US10266690
申请日：2002-10-09
申请人： Masaharu Muramatsu , Katsumi Shibayama , Tomohisa Itoh
发明人： Masaharu Muramatsu , Katsumi Shibayama , Tomohisa Itoh
IPC分类号： H01L3100
CPC分类号： H01L27/14618 , H01L27/14601 , H01L27/14623 , H01L31/0203 , H01L2224/48091 , H01L2924/10253 , H01L2924/15153 , H01L2924/15165 , H01L2924/15312 , H01L2924/1532 , H01L2924/15787 , H01L2924/16195 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor photodetecting apparatus 1 comprises a base 2 and a CCD chip 4. The CCD chip 4 is secured to the base 2 when a resin 8 is supplied and cured. The base 2 is formed with a gas supply path 15 and a gas exhaust path 16. Each of the gas supply path 15 and gas exhaust path 16 has one end opening to the upper face 2d of the base 2, and the other end opening to an end face of a mounting portion 2a. A gas storage section 19 and a gas supply pump 20 are connected to the gas supply path 15, whereby the gas supply pump 20 supplies N2 gas stored in the gas storage section 19 to a space within the base 2 by way of the gas supply path 15. The N2 gas supplied to the space is discharged from the gas exhaust path 16 after being refluxed through the space.
摘要翻译：半导体光检测装置1包括基座2和CCD芯片4.当提供树脂8并固化时，CCD芯片4固定到基座2。基座2形成有气体供给路径15和排气路径16.气体供给路径15和排气路径16中的每一个都具有通向基座2的上表面2d的一端，另一端开口安装部分2a的端面。气体储存部19和气体供给泵20与气体供给路径15连接，由此，气体供给泵20通过气体供给路径将储存在气体收纳部19内的N 2气体供给到基部2内的空间供给到该空间的N 2气体在通过空间回流后从排气路径16排出。

2. 发明授权

US09609247B2 Solid-state imaging device performing feed-forward control of multiplication factor of multiplication register to match dynamic range of the device with the intensity distribution of incident light 有权
公开(公告)号：US09609247B2
公开(公告)日：2017-03-28
申请号：US13144741
申请日：2010-01-22
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H04N5/372 , H01L27/146 , H01L27/148
CPC分类号： H04N5/37213 , H01L27/14609 , H01L27/14812
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, and a multiplication register unit 28 that multiplies the charge from the output register 20, and performs feed-forward control of the multiplication factor of the multiplication register unit 28 according to the charge amount from the imaging area 10.

3. 发明授权

US08841714B2 Solid state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08841714B2
公开(公告)日：2014-09-23
申请号：US13979172
申请日：2011-11-11
申请人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L31/02 , H01L27/148 , H04N5/372 , H01L27/146
CPC分类号： H01L27/14806 , H01L27/14601 , H01L27/14825 , H01L27/14831 , H04N5/37213
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.
摘要翻译：固态成像装置1具有具有多个感光区域7的光电转换部分2和具有与感光区域7相对布置的导电部件8的电位梯度形成部分3.每个光敏区域7的平面形状是大致矩形的形状。感光区域7在与长边相交的第一方向上并列。电位梯度形成部分3形成沿着从感光区域7的短边中的一个短边到另一个的第二方向变得更高的电位梯度。导电部件8包括沿第二方向延伸的第一区域8a和具有第一电阻率，第二区域8b沿第二方向延伸并具有小于第一电阻率的第二电阻率。

4. 发明申请

US20140091421A1 SOLID-STATE IMAGE PICKUP ELEMENT AND SOLID-STATE IMAGE PICKUP ELEMENT MOUNTING STRUCTURE 有权
标题翻译：固态图像拾取元件和固态图像拾取元件安装结构
公开(公告)号：US20140091421A1
公开(公告)日：2014-04-03
申请号：US14116852
申请日：2012-06-19
申请人： Tomohiro Ikeya , Toshiyuki Fukui , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Toshiyuki Fukui , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14618 , H01L2224/02373 , H01L2224/02375 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05548 , H01L2224/05553 , H01L2224/05555 , H01L2224/0603 , H01L2224/06051 , H01L2224/06135 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/15151 , H01L2924/15192 , H01L2924/16195 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode pads are arrayed, on the principal face of the semiconductor substrate, and a plurality of interconnections connecting the plurality of first electrode pads and the plurality of second electrode pads in one-to-one correspondence. The plurality of interconnections connect the first and second electrode pads so that each interconnection connects the first electrode pad and the second electrode pad in a positional relation of line symmetry with respect to a center line perpendicular to the array directions of the plurality of first and second electrode pads.
摘要翻译：固体摄像元件设置有具有感光区域的半导体衬底，排列在半导体衬底的主面上的多个第一电极焊盘，沿着沿着该半导体衬底的方向的方向排列的多个第二电极焊盘，多个第一电极焊盘排列在半导体衬底的主面上，并且一对一对应连接多个第一电极焊盘和多个第二电极焊盘的多个互连。多个互连件连接第一和第二电极焊盘，使得每个互连以相对于垂直于多个第一和第二电极焊盘和第二电极焊盘的阵列方向的中心线的线对称的位置关系连接第一电极焊盘和第二电极焊盘电极垫

5. 发明授权

US08446500B2 Solid-state imaging device having photoelectric converting portions and first and second transfer portions 有权
标题翻译：具有光电转换部分和第一和第二转印部分的固态成像装置
公开(公告)号：US08446500B2
公开(公告)日：2013-05-21
申请号：US12990051
申请日：2009-04-22
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Masaharu Muramatsu
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L27/14831 , H01L27/14825 , H04N5/37213
摘要： A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3 and first and second shift registers 9, 13. Each photoelectric converting portion 3 has a photosensitive region 15 which generates a charge according to incidence of light and which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 17 which forms a potential gradient increasing along a predetermined direction parallel to the long sides forming the planar shape of the photosensitive region 15, in the photosensitive region, 15. The plurality of photoelectric converting portions 3 are juxtaposed along a direction intersecting with the predetermined direction. The first and second shift registers 9, 13 acquire charges transferred from the respective photoelectric converting portions 3 and transfer them in the direction intersecting with the predetermined direction to output them. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.
摘要翻译：固态成像装置1设置有多个光电转换部分3和第一和第二移位寄存器9,13。每个光电转换部分3具有光敏区域15，其根据光的入射产生电荷，并且具有由两个长边和两个短边组成的近似矩形形状的平面形状以及形成沿着平行于形成感光区域15的平面形状的长边的预定方向增加的电位梯度的电位梯度形成区域17 感光区域15.多个光电转换部分3沿着与预定方向相交的方向并置。第一移位寄存器9和第二移位寄存器13获取从各个光电转换部分3传送的电荷并沿与预定方向相交的方向传送它们以输出它们。这实现了能够快速读出感光区域中产生的电荷的固态成像装置，而不会使图像处理复杂化。

6. 发明授权

US08334918B2 Solid-state imaging element 有权
标题翻译：具有不必要的电荷放电漏极的固态摄像装置
公开(公告)号：US08334918B2
公开(公告)日：2012-12-18
申请号：US12516411
申请日：2007-11-28
申请人： Shinya Otsuka , Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu
发明人： Shinya Otsuka , Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14887 , H01L27/14601 , H01L27/14656 , H04N5/335 , H04N5/3591
摘要： A solid-state image pickup device 1 includes: a plurality of photoelectric converters 2 which are aligned in a predetermined direction and have a potential made higher toward one side of a direction crossing the predetermined direction; a transferring section 6 which is provided on one side of the photoelectric converters 2 in the direction crossing the predetermined direction and transfers charges generated in the photoelectric converters 2 in the predetermined direction; an unnecessary charge discharging drain 7 which is provided adjacent to the photoelectric converter 2 along the direction crossing the predetermined direction and discharges unnecessary charges generated in the photoelectric converter 2 from the photoelectric converter 2; and an unnecessary charge discharging gate 8 which is provided between the photoelectric converter 2 and the unnecessary charge discharging drain 7 and selectively performs cutting-off and release of the flow of unnecessary charges from the photoelectric converter 2 to the unnecessary charge discharging drain 7.
摘要翻译：固体摄像装置1包括：多个光电转换器2，其沿预定方向排列并且具有朝向与预定方向交叉的方向的一侧较高的电位; 传送部分6，其沿着与预定方向交叉的方向设置在光电转换器2的一侧上，并沿预定方向传送在光电转换器2中产生的电荷; 沿着与规定方向交叉的方向与光电转换器2相邻设置的不需要的电荷排出漏极7，并从光电转换器2放出在光电转换器2中产生的不必要的电荷; 以及设置在光电转换器2和不需要的电荷排出漏极7之间的不必要的电荷放电栅极8，并且选择性地执行切断和释放从光电转换器2到不需要的电荷排放漏极7的不必要电荷的流动。

7. 发明授权

US08188417B2 Light detecting device 有权
标题翻译：光检测装置
公开(公告)号：US08188417B2
公开(公告)日：2012-05-29
申请号：US12444967
申请日：2007-10-09
申请人： Hiroya Kobayashi , Yasuhito Miyazaki , Masaharu Muramatsu
发明人： Hiroya Kobayashi , Yasuhito Miyazaki , Masaharu Muramatsu
IPC分类号： H01L27/00 , H01L31/00 , H01L31/0203 , H01L23/48
CPC分类号： H01L31/024 , H01L25/042 , H01L27/14618 , H01L31/0203 , H01L2224/05553 , H01L2224/48091 , H01L2224/4824 , H01L2224/49175 , H04N5/2253 , H01L2924/00014
摘要： In a photodetecting device 3, a wiring board 12 is provided at the front surface side of a photodetecting element 11 so that a first bonding pad region 15 formed on the front surface of the photodetecting element 11 is exposed, and second bonding pads 17B are formed, of the wiring board 12, in the region on a further inner side than first bonding pads 17A. Thereby, in the photodetecting device 3, a forming space for wire bonding can be located at the inside of the photodetecting element 11, so that the wiring board 12 and the photodetecting element 11 can be made almost equal in size. As a result, in the photodetecting device 3, the area that the photodetecting element 11 occupies relative to the photodetecting device 3 can be sufficiently secured, and minimization of the non-sensitive region in the case of a buttable arrangement of the photodetecting devices 3 on a cold plate 2 can be realized.
摘要翻译：在光电检测装置3中，在受光元件11的正面侧设置配线基板12，使得形成在受光元件11的表面上的第一焊盘区域15露出，形成第二接合焊盘17B 在比第一接合焊盘17A更靠内侧的区域中。因此，在光检测装置3中，用于引线接合的形成空间可以位于受光元件11的内部，使得布线板12和光电检测元件11的尺寸几乎相等。结果，在光检测装置3中，可以充分确保光检测元件11相对于受光器件3占有的面积，并且在光检测装置3的可放置配置的情况下，非敏感区域的最小化可以实现冷板2。

8. 发明申请

US20120007149A1 SOLID IMAGING DEVICE 有权
标题翻译：固体成像装置
公开(公告)号：US20120007149A1
公开(公告)日：2012-01-12
申请号：US13258344
申请日：2010-03-25
申请人： Hisanori Suzuki , Yasuhito Yoneta , Kentaro Maeta , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H01L31/113
CPC分类号： H04N5/37206 , H01L27/14831 , H01L27/14856 , H01L27/14887 , H01L31/113 , H04N5/3592
摘要： In a solid-state imaging device 1, an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 161 to 165 are electrically connected to the OFG 5 at connecting parts 171 to 175. Therefore, when voltage values V1 to V5 applied to the connecting parts 171 to 175 by the voltage application units 161 to 165 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4, whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.
摘要翻译：在固态成像装置1中，溢出门（OFG）5具有预定的电阻值，而施加电压单元161至165在连接部分171至175处与OFG5电连接。因此，当电压值V1 通过电压施加单元161〜165对应用于连接部171〜175的V5进行调整，OFG5可以分别在其较早和较晚的阶段部分产生较高和较低的电压值。结果，在较早阶段和较后阶段部分中的势垒级（电位）变得越来越高，使得可以使在光电转换单元2的较早级侧区域中产生的所有电荷流出到溢出漏极（OFD）4，由此只能在光电转换单元2的后级侧区域中产生的电荷被TDI转印。

9. 发明申请

US20110298958A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110298958A1
公开(公告)日：2011-12-08
申请号：US13147046
申请日：2010-01-22
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H04N5/335
CPC分类号： H01L27/14806 , H01L29/76816
摘要： A solid-state imaging device according to one embodiment is a multi-port solid-state imaging device, and includes an imaging region and a plurality of units. The imaging region includes a plurality of pixel columns. The units generate signals based on charges from the imaging region. Each of the units has an output register, a plurality of multiplication registers, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns out of the plurality of pixel columns. The multiplication registers are provided in parallel, and receive the charge from the output register to generate multiplied charges individually. The amplifier generates a signal based on the multiplied charges from the multiplication registers.
摘要翻译：根据一个实施例的固态成像装置是多端口固态成像装置，并且包括成像区域和多个单元。成像区域包括多个像素列。这些单元基于来自成像区域的电荷产生信号。每个单元具有输出寄存器，多个乘法寄存器和放大器。输出寄存器从多个像素列中的一个或多个对应的像素列传送电荷。乘法寄存器并行提供，并从输出寄存器接收电荷，以分别产生相乘电荷。放大器基于乘法寄存器中相乘的电荷产生信号。

10. 发明申请

US20110266644A1 SEMICONDUCTOR PHOTODETECTION ELEMENT 有权
公开(公告)号：US20110266644A1
公开(公告)日：2011-11-03
申请号：US13143765
申请日：2010-02-09
申请人： Kazuhisa Yamamura , Akira Sakamoto , Terumasa Nagano , Yasuhito Miyazaki , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Kazuhisa Yamamura , Akira Sakamoto , Terumasa Nagano , Yasuhito Miyazaki , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L31/02
CPC分类号： H01L31/0236 , H01L27/1462 , H01L27/1464 , H01L31/02327 , H01L31/035281 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetection element SP has a silicon substrate 21 comprised of a semiconductor of a first conductivity type, having a first principal surface 21a and a second principal surface 21b opposed to each other, and having a semiconductor layer 23 of a second conductivity type formed on the first principal surface 21a side; and charge transfer electrodes 25 provided on the first principal surface 21a and adapted to transfer generated charge. In the silicon substrate 21, an accumulation layer 31 of the first conductivity type having a higher impurity concentration than the silicon substrate 21 is formed on the second principal surface 21b side and an irregular asperity 10 is formed in a region opposed to at least the semiconductor region 23, in the second principal surface 21b. The region where the irregular asperity 10 is formed in the second principal surface 21b of the silicon substrate 21 is optically exposed.
摘要翻译：半导体光检测元件SP具有由第一导电类型的半导体构成的硅基板21，第一导电类型的半导体具有彼此相对的第一主表面21a和第二主表面21b，并且具有第二导电类型的半导体层23形成在第一主表面21a侧; 以及设置在第一主表面21a上并适于传送产生的电荷的电荷转移电极25。在硅基板21中，在第二主面21b侧形成有比硅基板21高的杂质浓度的第一导电类型的累积层31，并且在与至少半导体相对的区域中形成不规则的凹凸10 区域23，在第二主表面21b中。在硅衬底21的第二主表面21b中形成不规则凹凸10的区域被光学曝光。

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