专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140091421A1 SOLID-STATE IMAGE PICKUP ELEMENT AND SOLID-STATE IMAGE PICKUP ELEMENT MOUNTING STRUCTURE 有权
标题翻译：固态图像拾取元件和固态图像拾取元件安装结构
公开(公告)号：US20140091421A1
公开(公告)日：2014-04-03
申请号：US14116852
申请日：2012-06-19
申请人： Tomohiro Ikeya , Toshiyuki Fukui , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Toshiyuki Fukui , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14618 , H01L2224/02373 , H01L2224/02375 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05548 , H01L2224/05553 , H01L2224/05555 , H01L2224/0603 , H01L2224/06051 , H01L2224/06135 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/15151 , H01L2924/15192 , H01L2924/16195 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode pads are arrayed, on the principal face of the semiconductor substrate, and a plurality of interconnections connecting the plurality of first electrode pads and the plurality of second electrode pads in one-to-one correspondence. The plurality of interconnections connect the first and second electrode pads so that each interconnection connects the first electrode pad and the second electrode pad in a positional relation of line symmetry with respect to a center line perpendicular to the array directions of the plurality of first and second electrode pads.
摘要翻译：固体摄像元件设置有具有感光区域的半导体衬底，排列在半导体衬底的主面上的多个第一电极焊盘，沿着沿着该半导体衬底的方向的方向排列的多个第二电极焊盘，多个第一电极焊盘排列在半导体衬底的主面上，并且一对一对应连接多个第一电极焊盘和多个第二电极焊盘的多个互连。多个互连件连接第一和第二电极焊盘，使得每个互连以相对于垂直于多个第一和第二电极焊盘和第二电极焊盘的阵列方向的中心线的线对称的位置关系连接第一电极焊盘和第二电极焊盘电极垫

2. 发明授权

US09583526B2 Solid-state image pickup element and solid-state image pickup element mounting structure 有权
标题翻译：固态摄像元件和固态摄像元件安装结构
公开(公告)号：US09583526B2
公开(公告)日：2017-02-28
申请号：US14116852
申请日：2012-06-19
申请人： Tomohiro Ikeya , Toshiyuki Fukui , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Toshiyuki Fukui , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L27/146 , H01L23/00
CPC分类号： H01L27/14636 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14618 , H01L2224/02373 , H01L2224/02375 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05548 , H01L2224/05553 , H01L2224/05555 , H01L2224/0603 , H01L2224/06051 , H01L2224/06135 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/15151 , H01L2924/15192 , H01L2924/16195 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode pads are arrayed, on the principal face of the semiconductor substrate, and a plurality of interconnections connecting the plurality of first electrode pads and the plurality of second electrode pads in one-to-one correspondence. The plurality of interconnections connect the first and second electrode pads so that each interconnection connects the first electrode pad and the second electrode pad in a positional relation of line symmetry with respect to a center line perpendicular to the array directions of the plurality of first and second electrode pads.
摘要翻译：固体摄像元件设置有具有感光区域的半导体衬底，排列在半导体衬底的主面上的多个第一电极焊盘，沿着沿着该半导体衬底的方向的方向排列的多个第二电极焊盘，多个第一电极焊盘排列在半导体衬底的主面上，并且一对一对应连接多个第一电极焊盘和多个第二电极焊盘的多个互连。多个互连件连接第一和第二电极焊盘，使得每个互连以相对于垂直于多个第一和第二电极焊盘和第二电极焊盘的阵列方向的中心线的线对称的位置关系连接第一电极焊盘和第二电极焊盘电极垫

3. 发明授权

US09299860B2 Solid state imaging device including photoelectric conversion portion 有权
标题翻译：固态成像装置包括光电转换部分
公开(公告)号：US09299860B2
公开(公告)日：2016-03-29
申请号：US13977976
申请日：2011-11-11
申请人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L31/00 , H01L31/02 , H01L27/148
CPC分类号： H01L31/02 , H01L27/14806 , H01L27/14825 , H01L27/14831 , H01L27/14887
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13, and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13. A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.
摘要翻译：固态成像装置1设置有具有感光区域13的光电转换部分2和与感光区域13相对设置的电位梯度形成部分3.每个光敏区域13的平面形状是由两个长边和两边。感光区域13在与长边相交的第一方向上并列。电位梯度形成部分3具有第一电位梯度形成区域，以形成沿着从短边中的一个短边到另一个的第二方向变低的电位梯度;以及第二电位梯度形成区域，以形成电位梯度沿着第二个方向变得更高。第二电位梯度形成区域沿着第二方向布置在第一电位梯度形成区域的旁边。

4. 发明申请

US20130285188A1 SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20130285188A1
公开(公告)日：2013-10-31
申请号：US13977976
申请日：2011-11-11
申请人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L31/02
CPC分类号： H01L31/02 , H01L27/14806 , H01L27/14825 , H01L27/14831 , H01L27/14887
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13, and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13. A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.
摘要翻译：固态成像装置1设置有具有感光区域13的光电转换部分2和与感光区域13相对设置的电位梯度形成部分3.每个光敏区域13的平面形状是由两个长边和两边。感光区域13在与长边相交的第一方向上并列。电位梯度形成部分3具有第一电位梯度形成区域，以形成沿着从短边中的一个短边到另一个的第二方向变低的电位梯度，以及第二电位梯度形成区域，以形成电位梯度沿着第二个方向变得更高。第二电位梯度形成区域沿着第二方向布置在第一电位梯度形成区域的旁边。

5. 发明授权

US08841714B2 Solid state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08841714B2
公开(公告)日：2014-09-23
申请号：US13979172
申请日：2011-11-11
申请人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L31/02 , H01L27/148 , H04N5/372 , H01L27/146
CPC分类号： H01L27/14806 , H01L27/14601 , H01L27/14825 , H01L27/14831 , H04N5/37213
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.
摘要翻译：固态成像装置1具有具有多个感光区域7的光电转换部分2和具有与感光区域7相对布置的导电部件8的电位梯度形成部分3.每个光敏区域7的平面形状是大致矩形的形状。感光区域7在与长边相交的第一方向上并列。电位梯度形成部分3形成沿着从感光区域7的短边中的一个短边到另一个的第二方向变得更高的电位梯度。导电部件8包括沿第二方向延伸的第一区域8a和具有第一电阻率，第二区域8b沿第二方向延伸并具有小于第一电阻率的第二电阻率。

6. 发明申请

US20130292742A1 SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20130292742A1
公开(公告)日：2013-11-07
申请号：US13979172
申请日：2011-11-11
申请人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14601 , H01L27/14825 , H01L27/14831 , H04N5/37213
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.
摘要翻译：固态成像装置1具有具有多个感光区域7的光电转换部分2和具有与感光区域7相对布置的导电部件8的电位梯度形成部分3.每个光敏区域7的平面形状是大致矩形的形状。感光区域7在与长边相交的第一方向上并列。电位梯度形成部分3形成沿着从感光区域7的短边中的一个短边到另一个的第二方向变得更高的电位梯度。导电部件8包括沿第二方向延伸的第一区域8a和具有第一电阻率，第二区域8b沿第二方向延伸并具有小于第一电阻率的第二电阻率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式