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    • 8. 发明授权
    • Substrate biasing circuit and semiconductor integrated circuit device
    • 基板偏置电路和半导体集成电路器件
    • US6075404A
    • 2000-06-13
    • US56748
    • 1998-04-08
    • Yasuyuki ShindohHirofumi Watanabe
    • Yasuyuki ShindohHirofumi Watanabe
    • G11C11/413G05F3/20G11C11/408H01L21/822H01L27/04H02M3/07H03K19/094G05F3/02
    • G05F3/205
    • A substrate biasing circuit includes a logical threshold potential output circuit including transistors formed on a semiconductor substrate and generating a logical threshold potential. A potential compare control circuit compares the logical threshold potential with a reference potential and generating a control potential based on a comparison result. A substrate bias generating circuit generates, as long as the control potential indicates that the logical threshold potential is not equal to the reference potential, a substrate potential applied to the semiconductor substrate so that the logical threshold potential is equal to the reference potential, and stops operating after the logical threshold potential becomes equal to the reference potential. A switch circuit breaks a pass-through current path formed in the logical threshold potential output circuit when the control potential indicates that the logical threshold potential becomes equal to the reference potential.
    • 衬底偏置电路包括逻辑阈值电位输出电路,其包括形成在半导体衬底上并产生逻辑阈值电位的晶体管。 潜在的比较控制电路将逻辑阈值电位与参考电位进行比较,并且基于比较结果产生控制电位。 衬底偏置产生电路只要控制电位指示逻辑阈值电位不等于参考电位就产生施加到半导体衬底的衬底电位,使得逻辑阈值电位等于参考电位,并且停止 在逻辑阈值电位变得等于参考电位之后运行。 当控制电位指示逻辑阈值电位变得等于参考电位时,开关电路断开形成在逻辑阈值电位输出电路中的通过电流路径。