专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08888912B2 Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal 有权
标题翻译： III族氮化物晶体的制造方法，III族氮化物晶体的制造装置和III族氮化物晶体
公开(公告)号：US08888912B2
公开(公告)日：2014-11-18
申请号：US11914193
申请日：2006-05-12
申请人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B9/00 , C30B11/00 , C30B17/00 , C30B21/02 , C30B28/06 , C30B29/40 , C30B35/00 , C30B9/12
CPC分类号： C30B9/12 , C30B29/403 , C30B35/00 , Y10T117/1024
摘要： In a method of producing a group III nitride crystal in which a melt holding vessel where a melt containing a group III metal and flux is held is accommodated in a reaction vessel and a group III nitride crystal is produced as a substance containing nitrogen is supplied from an outside to the reaction vessel through a pipe, the method includes a step of forming an accumulated part of a liquid in the pipe to thereby temporarily close the pipe before growing the group III nitride crystal in the melt holding vessel.
摘要翻译：在制造其中保持含有III族金属和助熔剂的熔体的熔融保持容器的III族氮化物晶体的方法被容纳在反应容器中，并且作为含有氮的物质产生III族氮化物晶体，通过管道到达反应容器的外部，该方法包括在熔融容器内生长III族氮化物晶体之前，在管中形成液体的积聚部分以暂时封闭管道的步骤。

2. 发明申请

US20090249997A1 METHOD OF PRODUCING GROUP III NITRIDE CRYSTAL, APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND GROUP III NITRIDE CRYSTAL 有权
标题翻译：生产III族氮化物晶体的方法，用于生产III族氮化物晶体的装置和III族氮化物晶体
公开(公告)号：US20090249997A1
公开(公告)日：2009-10-08
申请号：US11914193
申请日：2006-05-12
申请人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B11/04
CPC分类号： C30B9/12 , C30B29/403 , C30B35/00 , Y10T117/1024
摘要： In a method of producing a group III nitride crystal in which a melt holding vessel where a melt containing a group III metal and flux is held is accommodated in a reaction vessel and a group III nitride crystal is produced as a substance containing nitrogen is supplied from an outside to the reaction vessel through a pipe, the method includes a step of forming an accumulated part of a liquid in the pipe to thereby temporarily close the pipe before growing the group III nitride crystal in the melt holding vessel.
摘要翻译：在制造其中保持含有III族金属和助熔剂的熔体的熔融保持容器的III族氮化物晶体的方法被容纳在反应容器中，并且作为含有氮的物质产生III族氮化物晶体，通过管道到达反应容器的外部，该方法包括在熔融容器内生长III族氮化物晶体之前，在管中形成液体的积聚部分以暂时封闭管道的步骤。

3. 发明授权

US4792510A Electrophotographic element with silicide treated porous Al.sub.2 O.sub.3 sublayer 失效
标题翻译：具有硅化物处理的多孔Al2O3子层的电子照相元件
公开(公告)号：US4792510A
公开(公告)日：1988-12-20
申请号：US142286
申请日：1987-12-30
申请人： Masafumi Kumano , Yasuyuki Shindoh , Yutaka Sano , Koichi Haga , Akihiro Fuse
发明人： Masafumi Kumano , Yasuyuki Shindoh , Yutaka Sano , Koichi Haga , Akihiro Fuse
IPC分类号： G03G5/082 , G03G5/14
CPC分类号： G03G5/144 , G03G5/08221
摘要： This invention relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer between said substrate and said amorphous silicon layer.This invention further relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer having the surface treated with a silicide material between said substrate and said amorphous silicon layer.
摘要翻译：本发明涉及一种用于电子照相的感光材料，其在基底上具有包含硅原子作为基质并含有氢原子，卤素原子和重氢原子中的至少一个的非晶硅层，其特征在于具有多孔氧化铝层在所述衬底和所述非晶硅层之间。本发明还涉及一种用于电子照相的感光材料，其在基底上具有包含硅原子作为基质并含有氢原子，卤素原子和重氢原子中的至少一个的非晶硅层，其特征在于具有多孔氧化铝层，其具有在所述衬底和所述非晶硅层之间用硅化物材料处理的表面。

4. 发明申请

US20160002818A1 CRYSTAL GROWTH APPARATUS AND MANUFACTURING METHOD OF GROUP III NITRIDE CRYSTAL 审中-公开
标题翻译：第III组氮化物晶体的晶体生长装置和制造方法
公开(公告)号：US20160002818A1
公开(公告)日：2016-01-07
申请号：US14853133
申请日：2015-09-14
申请人： Seiji SARAYAMA , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji SARAYAMA , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B9/12 , C30B29/40
CPC分类号： C30B9/12 , C30B9/00 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/062 , C30B19/106 , C30B29/40 , C30B29/403 , C30B29/406 , Y10T117/1092
摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.
摘要翻译：晶体生长装置包括保持含有碱金属和III族金属的熔融混合物的反应容器，向暴露于反应容器内的熔融混合物的容器空间供给氮源气体的供气装置，加热单元熔融混合物至晶体生长温度，以及支撑单元，其在熔融混合物内支撑III族氮化物晶体的籽晶。

5. 发明授权

US09163325B2 Crystal growth apparatus and manufacturing method of group III nitride crystal 有权
标题翻译：晶体生长装置及III族氮化物晶体的制造方法
公开(公告)号：US09163325B2
公开(公告)日：2015-10-20
申请号：US13313359
申请日：2011-12-07
申请人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B29/40 , C30B9/00 , C30B17/00
CPC分类号： C30B9/12 , C30B9/00 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/062 , C30B19/106 , C30B29/40 , C30B29/403 , C30B29/406 , Y10T117/1092
摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.
摘要翻译：晶体生长装置包括保持含有碱金属和III族金属的熔融混合物的反应容器，向暴露于反应容器内的熔融混合物的容器空间供给氮源气体的供气装置，加热单元熔融混合物至晶体生长温度，以及支撑单元，其在熔融混合物内支撑III族氮化物晶体的籽晶。

6. 发明授权

US08552720B2 Mobile information terminal apparatus and magnetic sensor, including magnetoresistive detecting device 有权
标题翻译：移动信息终端装置和磁传感器，包括磁阻检测装置
公开(公告)号：US08552720B2
公开(公告)日：2013-10-08
申请号：US12403424
申请日：2009-03-13
申请人： Futoyoshi Kou , Akihiro Fuse , Junichi Azumi
发明人： Futoyoshi Kou , Akihiro Fuse , Junichi Azumi
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , H01L43/08
摘要： A disclosed magnetic sensor includes a substrate having a plane surface and multiple sloping surfaces; multiple soft magnetic films each disposed on a different one of the sloping surfaces and magnetized according to strength of a magnetic field; and multiple detecting devices each disposed on the plane surface, including a free layer and a pinned layer and configured to produce a detection output according to magnetization of the free layer and the pinned layer. Each of the soft magnetic films is magnetically coupled with the free layer of a different one of the detecting devices. The pinned layers of the detecting devices have magnetization directions different from each other.
摘要翻译：所公开的磁传感器包括具有平面和多个倾斜表面的基板; 多个软磁膜各自设置在不同的一个倾斜表面上，并且根据磁场的强度被磁化; 以及多个检测装置，每个检测装置均设置在平面上，包括自由层和被钉扎层，并被配置为根据自由层和钉扎层的磁化产生检测输出。每个软磁膜与不同的检测装置的自由层磁耦合。检测装置的固定层具有彼此不同的磁化方向。

7. 发明申请

US20090015251A1 MAGNETIC SENSOR AND PRODUCTION METHOD THEREOF 有权
标题翻译：磁传感器及其生产方法
公开(公告)号：US20090015251A1
公开(公告)日：2009-01-15
申请号：US12137902
申请日：2008-06-12
申请人： Junichi AZUMI , Futoyoshi Kou , Akihiro Fuse
发明人： Junichi AZUMI , Futoyoshi Kou , Akihiro Fuse
IPC分类号： G01R33/09 , G01R3/00
CPC分类号： G01R33/093 , B82Y25/00 , Y10T29/49002
摘要： A magnetic sensor is disclosed that has plural axes at the same time, able to be fabricated in a small number of steps. The magnetic sensor includes a substrate; and plural sensor bridge circuits each including a pair of magnetic field detectors and a pair of fixed resistors on the substrate, the pair of the magnetic field detectors and the pair of the fixed resistors being connected to form a bridge circuit, each of the magnetic field detectors being formed of a magneto-resistance effect element, and magnetization directions of the magnetic field detectors intersect with each other in a three-dimensional manner. The substrate has plural inclined surfaces, normal directions of the inclined surfaces intersect with each other in a three-dimensional manner, and the pair of the magnetic field detectors in each of the sensor bridge circuits is arranged on the same inclined surface.
摘要翻译：公开了一种磁传感器，其同时具有多个轴，能够以少量的步骤制造。磁传感器包括基板; 以及多个传感器桥接电路，每个包括一对磁场检测器和一对固定电阻器，所述一对磁场检测器和一对固定电阻器被连接以形成桥接电路，每个磁场检测器由磁阻效应元件形成，并且磁场检测器的磁化方向以三维方式彼此相交。基板具有多个倾斜面，倾斜面的法线方向以三维方式相交，并且每个传感器桥接电路中的一对磁场检测器配置在同一倾斜面上。

8. 发明授权

US08475593B2 Crystal preparing device, crystal preparing method, and crystal 有权
标题翻译：晶体制备装置，晶体制备方法和晶体
公开(公告)号：US08475593B2
公开(公告)日：2013-07-02
申请号：US13170431
申请日：2011-06-28
申请人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
发明人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
IPC分类号： C30B9/00 , C30B11/00
CPC分类号： C30B9/10 , C30B17/00 , C30B29/403 , C30B29/406 , Y10T117/1024
摘要： In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.
摘要翻译：在晶体制备装置中，坩埚保持含有碱金属和III族金属的混合熔融金属。容器具有与混合熔融金属接触的容器空间，并且在容器空间和容器外部之间保持熔融碱金属，熔融碱金属与容器空间接触。气体供给装置向容器空间供给氮气。加热装置将坩埚加热至晶体生长温度。提供了晶体制备装置，使得从熔融碱金属蒸发的碱金属的蒸汽压基本上等于从混合的熔融金属蒸发的碱金属的蒸气压。

9. 发明申请

US20120085279A1 CRYSTAL GROWTH APPARATUS AND MANUFACTURING METHOD OF GROUP III NITRIDE CRYSTAL 审中-公开
标题翻译：第III组氮化物晶体的晶体生长装置和制造方法
公开(公告)号：US20120085279A1
公开(公告)日：2012-04-12
申请号：US13313359
申请日：2011-12-07
申请人： Seiji SARAYAMA , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji SARAYAMA , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B9/00
CPC分类号： C30B9/12 , C30B9/00 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/062 , C30B19/106 , C30B29/40 , C30B29/403 , C30B29/406 , Y10T117/1092
摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.
摘要翻译：晶体生长装置包括保持含有碱金属和III族金属的熔融混合物的反应容器，向暴露于反应容器内的熔融混合物的容器空间供给氮源气体的供气装置，加热单元熔融混合物至晶体生长温度，以及支撑单元，其在熔融混合物内支撑III族氮化物晶体的籽晶。

10. 发明申请

US20090237074A1 MAGNETIC SENSOR AND MOBILE INFORMATION TERMINAL APPARATUS 有权
标题翻译：磁传感器和移动信息终端设备
公开(公告)号：US20090237074A1
公开(公告)日：2009-09-24
申请号：US12403424
申请日：2009-03-13
申请人： Futoyoshi KOU , Akihiro Fuse , Junichi Azumi
发明人： Futoyoshi KOU , Akihiro Fuse , Junichi Azumi
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , H01L43/08
摘要： A disclosed magnetic sensor includes a substrate having a plane surface and multiple sloping surfaces; multiple soft magnetic films each disposed on a different one of the sloping surfaces and magnetized according to strength of a magnetic field; and multiple detecting devices each disposed on the plane surface, including a free layer and a pinned layer and configured to produce a detection output according to magnetization of the free layer and the pinned layer. Each of the soft magnetic films is magnetically coupled with the free layer of a different one of the detecting devices. The pinned layers of the detecting devices have magnetization directions different from each other.
摘要翻译：所公开的磁传感器包括具有平面和多个倾斜表面的基板; 多个软磁膜各自设置在不同的一个倾斜表面上，并根据磁场的强度被磁化; 以及多个检测装置，每个检测装置均设置在平面上，包括自由层和被钉扎层，并被配置为根据自由层和钉扎层的磁化产生检测输出。每个软磁膜与不同的检测装置的自由层磁耦合。检测装置的固定层具有彼此不同的磁化方向。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式