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1. 发明授权

US06904068B2 Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device 失效
标题翻译：采用该半导体激光装置的半导体激光装置和多波长激光发光装置
公开(公告)号：US06904068B2
公开(公告)日：2005-06-07
申请号：US09824456
申请日：2001-04-02
申请人： Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
发明人： Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
IPC分类号： A61B18/20 , A61F9/008 , H01S5/00 , H01S5/22 , H01S5/40 , H01S3/13
CPC分类号： A61F9/008 , A61B18/20 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062 , H01S5/4068
摘要： To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional.
摘要翻译：提供能够输出高功率激光并适用于光学记录，光通信，焊接等的半导体激光装置以及采用该半导体激光装置的多波长激光发光装置。半导体激光器件包括至少部分地反射从半导体激光器阵列元件中的激光振荡器的端面发射的激光束的光学元件，使得激光束入射到另一个激光振荡器上。由此，即使在以制造不成问题的间距配置激光振荡器的情况下，从一个激光振荡器的端面发射的激光束和从另一个激光振荡器的端面发射的激光束是锁相的。通过冷凝这些激光束，半导体激光装置可以输出比常规的更高功率的激光。

2. 发明授权

US06826224B2 HIGH-POWER SEMICONDUCTOR LASER ARRAY APPARATUS THAT OUTPUTS LASER LIGHTS MATCHED IN WAVELENGTH AND PHASE, MANUFACTURING METHOD THEREFOR, AND MULTI-WAVELENGTH LASER EMITTING APPARATUS USING SUCH HIGH-POWER SEMICONDUCTOR LASER ARRAY APPARATUS 失效
标题翻译：大功率半导体激光阵列设备，其波长和相位的激光照射，其制造方法以及使用这种大功率半导体激光阵列装置的多波长激光发射装置
公开(公告)号：US06826224B2
公开(公告)日：2004-11-30
申请号：US09818346
申请日：2001-03-27
申请人： Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
发明人： Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
IPC分类号： H01S308
CPC分类号： A61B18/20 , A61F9/008 , A61F9/00802 , A61F9/00825 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062 , H01S5/4068
摘要： A semiconductor laser array apparatus including: a substrate; a plurality of current blocking elements that are stripe shaped and are formed on the substrate; and a plurality of light waveguides that are formed between the plurality of current blocking elements, where at least two adjacent light waveguides are optically connected by removing a part of each current blocking element therebetween.
摘要翻译：一种半导体激光阵列装置，包括：基板; 多个电流阻挡元件，其是条形形状并形成在所述基板上; 以及多个光波导，其形成在所述多个电流阻挡元件之间，其中至少两个相邻的光波导通过去除其间的每个电流阻挡元件的一部分来光学连接。

3. 发明授权

US06556606B2 HIGH-POWERED SEMICONDUCTOR LASER ARRAY APPARATUS IN WHICH THE WAVELENGTH AND PHASE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS ABOVE CAN BE MATCHED THOSE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS BELOW, MANUFACTURING METHOD OF THE SEMICONDUCTOR LASER ARRAY APPARATUS AND MULTI-WAVELENGTH LASER EMITTING APPARATUS USING THE SEMICONDUCTOR LASER ARRAY APPARATUSES 有权
标题翻译：高功率半导体激光器阵列，其中来自半导体激光器单元的波长和相位的激光器单元可以与下面的半导体激光器单元匹配激光束，半导体激光阵列设备和多波长激光发射设备的制造方法半导体激光阵列设备
公开(公告)号：US06556606B2
公开(公告)日：2003-04-29
申请号：US09824470
申请日：2001-04-02
申请人： Toru Takayama , Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
发明人： Toru Takayama , Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
IPC分类号： H01S319
CPC分类号： H01S5/4068 , A61B18/20 , A61F9/008 , A61F9/00802 , A61F9/00825 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062
摘要： A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.
摘要翻译：一种半导体激光阵列装置，包括：第一激光阵列结构，其包括以间隔并排布置的多个第一激光振荡单元和填充每对相邻激光振荡单元之间的空间的第一电流阻挡材料，第二激光阵列结构，其包括以间隔并排布置的多个第二激光器阵列结构，以及填充每对相邻的第二激光振荡单元之间的空间的第二电流阻挡材料。这里，来自激活的第一和第二激光器阵列结构的激光束分别泄漏到那些激光阵列结构的外部，以分别形成激光束的第一和第二分布区域，并且第一和第二激光器阵列结构彼此靠近使得第一和第二分配区域彼此接触或重叠。

4. 发明授权

US07826512B2 Semiconductor laser device including transparent electrode 有权
标题翻译：半导体激光器件包括透明电极
公开(公告)号：US07826512B2
公开(公告)日：2010-11-02
申请号：US11850603
申请日：2007-09-05
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01S5/00 , H01S3/097
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3214 , H01S2304/12 , Y10S438/973 , Y10S438/977
摘要： It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
摘要翻译：本发明的目的是提供一种具有高产量的半导体激光器件，其中在外延生长层中产生的夹克被抑制，并且其制造方法，半导体激光器件包括GaN衬底1，型GaN层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 p型GaN引导层8，SiO 2阻挡层9，作为透明电极的Ni / ITO包层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12。在InGaN多量子阱活性层5的上方形成SiO 2阻挡层9，以具有开口。 Ni / ITO包层电极10形成在开口内部，对于来自InGaN多量子阱有源层的光是透明的，并且用作覆层。

5. 发明授权

US07773646B2 Semiconductor light source and light-emitting device drive circuit 有权
标题翻译：半导体光源和发光装置驱动电路
公开(公告)号：US07773646B2
公开(公告)日：2010-08-10
申请号：US12280603
申请日：2007-03-14
申请人： Daisuke Ueda , Masaaki Yuri , Katsumi Sugiura , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Katsumi Sugiura , Kenichi Matsuda
IPC分类号： H01S3/00
CPC分类号： H01S5/042
摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.
摘要翻译：半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。反向偏压的大小受流过发光器件的反向电流的值的限制。

6. 发明授权

US07738525B2 Semiconductor laser and method for fabricating the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US07738525B2
公开(公告)日：2010-06-15
申请号：US12065991
申请日：2007-07-09
申请人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/162 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3404
摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.
摘要翻译：半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

7. 发明申请

US20100019254A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHTING MODULE, LIGHTING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置，照明模块，照明装置和半导体发光装置的制造方法
公开(公告)号：US20100019254A1
公开(公告)日：2010-01-28
申请号：US12569660
申请日：2009-09-29
申请人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
发明人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/385 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2221/68363 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.
摘要翻译：作为一种半导体发光器件（2）的LED裸芯片包括由p-GaN层（12），InGaN / GaN MQW发光层（14）和n（n）组成的多层外延结构（6） -GaN层（16）。在p-GaN层（12）上形成p电极（18），在n-GaN层（16）上形成n电极（20）。在p电极（18）上形成Au镀层（4）。 Au镀层（4）支撑多层外延结构（6）并且传导在发光层（14）中产生的热量。 Au镀层（4）通过聚酰亚胺构件（10）电分成两部分。两个部分（4A）中的一个连接到p电极（18），以构成阳极电源端子，另一部分（4K）通过布线（...）连接到n电极（20） 22）构成为阴极电源端子。

8. 发明授权

US07622743B2 Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device 有权
标题翻译：半导体发光元件，照明模块，照明装置以及半导体发光元件的制造方法
公开(公告)号：US07622743B2
公开(公告)日：2009-11-24
申请号：US10577780
申请日：2004-11-01
申请人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
发明人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/385 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2221/68363 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.
摘要翻译：作为一种半导体发光器件（2）的LED裸芯片包括由p-GaN层（12），InGaN / GaN MQW发光层（14）和n（n）组成的多层外延结构（6） -GaN层（16）。在p-GaN层（12）上形成p电极（18），在n-GaN层（16）上形成n电极（20）。在p电极（18）上形成Au镀层（4）。 Au镀层（4）支撑多层外延结构（6）并传导在发光层（14）中产生的热量。 Au镀层（4）通过聚酰亚胺构件（10）电分成两部分。两个部分（4A）中的一个连接到p电极（18），以构成阳极电源端子，另一部分（4K）通过布线（...）连接到n电极（20） 22）构成为阴极电源端子。

9. 发明授权

US07306675B2 Method for manufacturing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US07306675B2
公开(公告)日：2007-12-11
申请号：US10145149
申请日：2002-05-15
申请人： Masaaki Yuri
发明人： Masaaki Yuri
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02664 , Y10S117/902 , Y10S117/904
摘要： A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer on the first semiconductor layer; and (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate, wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.
摘要翻译：本发明的半导体衬底的制造方法包括以下步骤：（a）提供支撑衬底; （b）在所述支撑基板上外延生长第一半导体层; （c）在第一半导体层上外延生长第二半导体层; 以及（d）通过去除所述支撑衬底来形成包括所述第一半导体层和所述第二半导体层的半导体衬底，其中所述第一半导体层的原子附着到所述支撑衬底的原子与原子间的原子间距离第二半导体层在外延生长面中相对于第一半导体层的原子的原子间距离具有相同的大小关系。

10. 发明申请

US20060202211A1 Method for fabricating light-emitting device utilizing substrate transfer by laser decomposition 审中-公开
标题翻译：利用激光分解利用基片转印制造发光器件的方法
公开(公告)号：US20060202211A1
公开(公告)日：2006-09-14
申请号：US11433555
申请日：2006-05-15
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00 , H01L31/12
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/387 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/14
摘要： A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 μm is formed, using an Au layer in the n-side electrode as an underlying layer.
摘要翻译：发光器件包括具有至少两个具有不同导电类型的半导体层的元件结构。在元件结构上形成ITO的透明p侧电极。在p侧电极的区域上形成接合焊盘。在与p侧电极相反的元件结构的表面上形成由Ti / Au构成的n侧电极。使用n侧电极中的Au层作为下层，形成厚度为50μm左右的由镀金制成的金属膜。

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