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1. 发明授权

US06904068B2 Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device 失效
标题翻译：采用该半导体激光装置的半导体激光装置和多波长激光发光装置
公开(公告)号：US06904068B2
公开(公告)日：2005-06-07
申请号：US09824456
申请日：2001-04-02
申请人： Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
发明人： Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
IPC分类号： A61B18/20 , A61F9/008 , H01S5/00 , H01S5/22 , H01S5/40 , H01S3/13
CPC分类号： A61F9/008 , A61B18/20 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062 , H01S5/4068
摘要： To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional.
摘要翻译：提供能够输出高功率激光并适用于光学记录，光通信，焊接等的半导体激光装置以及采用该半导体激光装置的多波长激光发光装置。半导体激光器件包括至少部分地反射从半导体激光器阵列元件中的激光振荡器的端面发射的激光束的光学元件，使得激光束入射到另一个激光振荡器上。由此，即使在以制造不成问题的间距配置激光振荡器的情况下，从一个激光振荡器的端面发射的激光束和从另一个激光振荡器的端面发射的激光束是锁相的。通过冷凝这些激光束，半导体激光装置可以输出比常规的更高功率的激光。

2. 发明授权

US06826224B2 HIGH-POWER SEMICONDUCTOR LASER ARRAY APPARATUS THAT OUTPUTS LASER LIGHTS MATCHED IN WAVELENGTH AND PHASE, MANUFACTURING METHOD THEREFOR, AND MULTI-WAVELENGTH LASER EMITTING APPARATUS USING SUCH HIGH-POWER SEMICONDUCTOR LASER ARRAY APPARATUS 失效
标题翻译：大功率半导体激光阵列设备，其波长和相位的激光照射，其制造方法以及使用这种大功率半导体激光阵列装置的多波长激光发射装置
公开(公告)号：US06826224B2
公开(公告)日：2004-11-30
申请号：US09818346
申请日：2001-03-27
申请人： Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
发明人： Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
IPC分类号： H01S308
CPC分类号： A61B18/20 , A61F9/008 , A61F9/00802 , A61F9/00825 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062 , H01S5/4068
摘要： A semiconductor laser array apparatus including: a substrate; a plurality of current blocking elements that are stripe shaped and are formed on the substrate; and a plurality of light waveguides that are formed between the plurality of current blocking elements, where at least two adjacent light waveguides are optically connected by removing a part of each current blocking element therebetween.
摘要翻译：一种半导体激光阵列装置，包括：基板; 多个电流阻挡元件，其是条形形状并形成在所述基板上; 以及多个光波导，其形成在所述多个电流阻挡元件之间，其中至少两个相邻的光波导通过去除其间的每个电流阻挡元件的一部分来光学连接。

3. 发明授权

US06556606B2 HIGH-POWERED SEMICONDUCTOR LASER ARRAY APPARATUS IN WHICH THE WAVELENGTH AND PHASE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS ABOVE CAN BE MATCHED THOSE OF LASER BEAMS FROM SEMICONDUCTOR LASER UNITS BELOW, MANUFACTURING METHOD OF THE SEMICONDUCTOR LASER ARRAY APPARATUS AND MULTI-WAVELENGTH LASER EMITTING APPARATUS USING THE SEMICONDUCTOR LASER ARRAY APPARATUSES 有权
标题翻译：高功率半导体激光器阵列，其中来自半导体激光器单元的波长和相位的激光器单元可以与下面的半导体激光器单元匹配激光束，半导体激光阵列设备和多波长激光发射设备的制造方法半导体激光阵列设备
公开(公告)号：US06556606B2
公开(公告)日：2003-04-29
申请号：US09824470
申请日：2001-04-02
申请人： Toru Takayama , Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
发明人： Toru Takayama , Masaaki Yuri , Seiichiro Tamai , Kunio Ito , Masaru Kazumura
IPC分类号： H01S319
CPC分类号： H01S5/4068 , A61B18/20 , A61F9/008 , A61F9/00802 , A61F9/00825 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062
摘要： A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.
摘要翻译：一种半导体激光阵列装置，包括：第一激光阵列结构，其包括以间隔并排布置的多个第一激光振荡单元和填充每对相邻激光振荡单元之间的空间的第一电流阻挡材料，第二激光阵列结构，其包括以间隔并排布置的多个第二激光器阵列结构，以及填充每对相邻的第二激光振荡单元之间的空间的第二电流阻挡材料。这里，来自激活的第一和第二激光器阵列结构的激光束分别泄漏到那些激光阵列结构的外部，以分别形成激光束的第一和第二分布区域，并且第一和第二激光器阵列结构彼此靠近使得第一和第二分配区域彼此接触或重叠。

4. 发明授权

US4747909A Method for manufacturing a perpendicular sidewalled metal layer on a substrate 失效
标题翻译：在基板上制造垂直侧壁金属层的方法
公开(公告)号：US4747909A
公开(公告)日：1988-05-31
申请号：US853762
申请日：1986-04-18
申请人： Kunihiko Kanazawa , Masaru Kazumura
发明人： Kunihiko Kanazawa , Masaru Kazumura
IPC分类号： H01L29/812 , H01L21/02 , H01L21/027 , H01L21/288 , H01L21/311 , H01L21/3205 , H01L21/338 , H01L21/48 , H05K3/00 , H05K3/10 , H05K3/38 , H01L21/312 , C25D5/02
CPC分类号： H01L28/40 , H01L21/0271 , H01L21/288 , H01L21/2885 , H01L21/31138 , H01L21/4846 , H05K3/108 , H05K2201/0175 , H05K2201/0317 , H05K2203/0585 , H05K2203/095 , H05K3/0041 , H05K3/388
摘要： A thick resist layer is formed on a thin metal film and the resist layer is dry-etched by using an SiO.sub.2 mask formed selectively on the resist layer, and a thick wiring metal layer is formed by plating method with using the dry-etched resist layer, which has perpendicular side walls as a mask, thereby to form a low resistance and fine-patterned wiring metal layer.
摘要翻译：在薄金属膜上形成厚的抗蚀剂层，并且通过使用在抗蚀剂层上选择性地形成的SiO 2掩模来干蚀刻抗蚀剂层，并且通过使用干蚀刻抗蚀剂层的电镀方法形成厚的布线金属层其具有垂直侧壁作为掩模，从而形成低电阻和精细图案化的布线金属层。

5. 发明授权

US4338877A Apparatus for making semiconductor devices 失效
标题翻译：用于制造半导体器件的装置
公开(公告)号：US4338877A
公开(公告)日：1982-07-13
申请号：US84297
申请日：1979-10-12
申请人： Haruyoshi Yamanaka , Masaru Kazumura
发明人： Haruyoshi Yamanaka , Masaru Kazumura
IPC分类号： C30B19/06 , C30B19/10 , H01L21/208 , H01L33/28 , H01L33/30 , H01S5/00 , B05C3/09
CPC分类号： C30B19/10 , C30B19/063 , C30B19/068
摘要： An apparatus for making semiconductor devices comprising a block having a slot hole for holding a semiconductor substrate therein, a solution container which has a predetermined number of holes to contain semiconductor solutions therein and is slidably disposed on said block, characterized in that said slot hole has walls having a considerable angle with respect to a horizontal plane and has a solution inlet at the top part of said slot hole and a solution outlet at the bottom part of said slot hole, and has a means to hold said substrate with its principal face substantially parallel to said walls.
摘要翻译：一种用于制造半导体器件的装置，包括具有用于保持半导体衬底的槽孔的块，具有预定数量的孔以容纳半导体溶液并且可滑动地设置在所述块上的溶液容器，其特征在于，所述槽孔具有相对于水平面具有相当角度的壁，并且在所述槽孔的顶部具有溶液入口和在所述槽孔的底部具有溶液出口，并且具有用于将所述基底主要面基本上保持的装置平行于所述墙壁。

6. 发明授权

US4339689A Light emitting diode and method of making the same 失效
标题翻译：发光二极管及其制作方法
公开(公告)号：US4339689A
公开(公告)日：1982-07-13
申请号：US115249
申请日：1980-01-21
申请人： Haruyoshi Yamanaka , Masaru Kazumura
发明人： Haruyoshi Yamanaka , Masaru Kazumura
IPC分类号： G02B6/42 , H01L33/20 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/20 , G02B6/4206 , Y10S438/928
摘要： A light-emitting diode is comprised of:a semiconductor active layer,a semiconductor first clad layer formed on a surface of said semiconductor active layer, anda protrusion formed unitarily on a surface of said first clad layer for facing an input end of a light guide for light coupling therewith.A method of manufacturing the light emitting diode is comprised of the steps offorming a recess on one face of a semiconductor substrate,forming a semiconductor first clad layer on the abovementioned face of the semiconductor substrate, andselectively etching the substrate from the other face thereof so as to form a through-hole reaching said recess on said one face of the semiconductor substrate, thereby exposing at least a protrusion of said semiconductor first clad layer formed in said recess.
摘要翻译：发光二极管包括：半导体有源层，形成在所述半导体有源层的表面上的半导体第一覆盖层和在所述第一覆盖层的与所述第一覆盖层的输入端相对的表面上整体形成的突起导光板与光耦合。一种制造发光二极管的方法包括以下步骤：在半导体衬底的一个面上形成凹槽，在半导体衬底的上述表面上形成半导体第一覆盖层，并从其另一面选择性地蚀刻衬底以形成在半导体衬底的所述一个表面上到达所述凹部的通孔，从而暴露形成在所述凹部中的所述半导体第一包覆层的至少一个凸起。

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