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1. 发明授权

US07834366B2 Semiconductor device having a group III nitride semiconductor layer 有权
标题翻译：具有III族氮化物半导体层的半导体器件
公开(公告)号：US07834366B2
公开(公告)日：2010-11-16
申请号：US11491261
申请日：2006-07-24
申请人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
发明人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/32 , H01L29/66462 , H01L29/802 , H01L33/007
摘要： A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.
摘要翻译：半导体器件具有衬底，形成在衬底上的第一III族氮化物半导体层，在第一III族氮化物半导体层中存在的缺陷的上部附近形成的第一氧化物层和第二III族氮化物半导体层包括正层，并且形成在第一III族氮化物半导体层和第一氧化物层的每一个上。

2. 发明授权

US06197441B1 Cubic nitride semiconductor device and fabrication method of the same 失效
标题翻译：立方氮化物半导体器件及其制造方法
公开(公告)号：US06197441B1
公开(公告)日：2001-03-06
申请号：US09124889
申请日：1998-07-30
申请人： Masaaki Yuri , Tetsuzo Ueda , Takaaki Baba
发明人： Masaaki Yuri , Tetsuzo Ueda , Takaaki Baba
IPC分类号： H01L21203
CPC分类号： C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/0254 , H01L21/02631 , H01L21/02658
摘要： The object of the present invention is to form a cubic nitride semiconductor layer of excellent surface flatness and crystallization on a cubic III-V family compound semiconductor substrate, featuring a fabrication method that comprises the steps of forming a cubic semiconductor layer 2 containing aluminum, nitriding one surface of the semiconductor layer 2 by heating in an atmosphere of a nitrogen compound and then supplying a nitrogen compound and a compound containing III family elements to form a cubic nitride semiconductor layer 3 on the semiconductor layer 2.
摘要翻译：本发明的目的是在立方体III-V族化合物半导体衬底上形成表面平整度和结晶度优异的立方氮化物半导体层，其特征在于包括以下步骤：形成含铝的立方半导体层2，氮化在氮化合物的气氛中加热半导体层2的一个表面，然后在半导体层2上提供氮化合物和含有III族元素的化合物以形成立方氮化物半导体层3。

3. 发明授权

US07508001B2 Semiconductor laser device and manufacturing method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07508001B2
公开(公告)日：2009-03-24
申请号：US11154807
申请日：2005-06-17
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0422 , H01S5/0655 , H01S5/2009 , H01S5/2206 , H01S5/2218 , H01S5/2232 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN layer 2; an n-type AlGaN cladding layer 3, a first n-type GaN guiding layer 4; and a p-type AlGaN blocking layer 6 (current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer 6, a second n-type GaN guiding layer 5 is formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer 5: an InGaN multiple quantum well active layer 7; an undoped GaN guiding layer 8; a p-type AlGaN electron overflow suppression layer 9, a p-type AlGaN cladding layer 10, and a p-type GaN contact layer 11.
摘要翻译：本发明旨在提供一种具有低阈值电流的长寿命半导体激光器件，并且可用于使用氮化物半导体层的蓝紫色半导体激光器件中的高输出操作。在半导体激光器件中，在GaN衬底1上依次形成以下层：n型GaN层2; n型AlGaN包覆层3，第一n型GaN引导层4，和p型AlGaN阻挡层6（电流阻挡层），另外在p型AlGaN阻挡层6的一部分上形成条状开口，形成第二n型GaN引导层5以覆盖开口并且在第二n型GaN引导层5上依次形成以下层：InGaN多量子阱有源层7; 未掺杂的GaN引导层8; p型AlGaN电子溢出抑制层9，p型AlGaN包覆层10和p型GaN接触层11。

4. 发明申请

US20060255350A1 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US20060255350A1
公开(公告)日：2006-11-16
申请号：US11491261
申请日：2006-07-24
申请人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
发明人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/32 , H01L29/66462 , H01L29/802 , H01L33/007
摘要： A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.

5. 发明申请

US20050280022A1 Semiconductor laser device and manufacturing method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050280022A1
公开(公告)日：2005-12-22
申请号：US11154807
申请日：2005-06-17
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L29/24 , H01S5/02 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0422 , H01S5/0655 , H01S5/2009 , H01S5/2206 , H01S5/2218 , H01S5/2232 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN layer 2; an n-type AlGaN cladding layer 3, a first n-type GaN guiding layer 4; and a p-type AlGaN blocking layer 6 (current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer 6, a second n-type GaN guiding layer 5 is formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer 5: an InGaN multiple quantum well active layer 7; an undoped GaN guiding layer 8; a p-type AlGaN electron overflow suppression layer 9, a p-type AlGaN cladding layer 10, and a p-type GaN contact layer 11.
摘要翻译：本发明旨在提供一种具有低阈值电流的长寿命半导体激光器件，并且可用于使用氮化物半导体层的蓝紫色半导体激光器件中的高输出操作。在半导体激光器件中，在GaN衬底1上依次形成以下的层：n型GaN层2; n型AlGaN包覆层3，第一n型GaN引导层4，和p型AlGaN阻挡层6（电流阻挡层），另外在p型AlGaN阻挡层6的一部分上形成条状开口，形成第二n型GaN引导层5以覆盖开口并且在第二n型GaN引导层5上依次形成以下层：InGaN多量子阱有源层7; 未掺杂的GaN引导层8; p型AlGaN电子溢出抑制层9，p型AlGaN包覆层10和p型GaN接触层11。

6. 发明授权

US06887770B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06887770B2
公开(公告)日：2005-05-03
申请号：US10442301
申请日：2003-05-21
申请人： Tetsuzo Ueda , Masahiro Ishida , Masaaki Yuri
发明人： Tetsuzo Ueda , Masahiro Ishida , Masaaki Yuri
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205 , H01L21/762 , H01L33/06 , H01L33/32 , H01L33/40 , H01S3/00 , H01S5/02 , H01S5/323 , H01S5/343 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76251 , H01L33/0079 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： A polymer film including an adhesive layer, which can be peeled off with heat, is bonded to the upper surface of a semiconductor layer. Then, a KrF excimer laser light beam is applied to a surface of a substrate opposite to the semiconductor layer. This causes local heating at the laser spot, so that the bonding of atoms is cut off at the interface between the semiconductor layer and the substrate, thereby forming a thermal decomposition layer between the substrate and the semiconductor layer. Subsequently, the substrate is heated at a given temperature, so that the adhesive layer foams to lose its adhesive power. As a result, the polymer film is easily peeled off from the semiconductor layer.
摘要翻译：包含能够被热剥离的粘合剂层的聚合物膜结合到半导体层的上表面。然后，将KrF准分子激光束施加到与半导体层相反的基板的表面。这导致在激光点处的局部加热，使得原子的键合在半导体层和衬底之间的界面处被切断，从而在衬底和半导体层之间形成热分解层。随后，将衬底在给定温度下加热，使得粘合剂层发泡以失去其粘合力。结果，聚合物膜容易从半导体层剥离。

7. 发明授权

US07826512B2 Semiconductor laser device including transparent electrode 有权
标题翻译：半导体激光器件包括透明电极
公开(公告)号：US07826512B2
公开(公告)日：2010-11-02
申请号：US11850603
申请日：2007-09-05
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01S5/00 , H01S3/097
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3214 , H01S2304/12 , Y10S438/973 , Y10S438/977
摘要： It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
摘要翻译：本发明的目的是提供一种具有高产量的半导体激光器件，其中在外延生长层中产生的夹克被抑制，并且其制造方法，半导体激光器件包括GaN衬底1，型GaN层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 p型GaN引导层8，SiO 2阻挡层9，作为透明电极的Ni / ITO包层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12。在InGaN多量子阱活性层5的上方形成SiO 2阻挡层9，以具有开口。 Ni / ITO包层电极10形成在开口内部，对于来自InGaN多量子阱有源层的光是透明的，并且用作覆层。

8. 发明申请

US20100019254A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHTING MODULE, LIGHTING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置，照明模块，照明装置和半导体发光装置的制造方法
公开(公告)号：US20100019254A1
公开(公告)日：2010-01-28
申请号：US12569660
申请日：2009-09-29
申请人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
发明人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/385 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2221/68363 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.
摘要翻译：作为一种半导体发光器件（2）的LED裸芯片包括由p-GaN层（12），InGaN / GaN MQW发光层（14）和n（n）组成的多层外延结构（6） -GaN层（16）。在p-GaN层（12）上形成p电极（18），在n-GaN层（16）上形成n电极（20）。在p电极（18）上形成Au镀层（4）。 Au镀层（4）支撑多层外延结构（6）并且传导在发光层（14）中产生的热量。 Au镀层（4）通过聚酰亚胺构件（10）电分成两部分。两个部分（4A）中的一个连接到p电极（18），以构成阳极电源端子，另一部分（4K）通过布线（...）连接到n电极（20） 22）构成为阴极电源端子。

9. 发明授权

US07622743B2 Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device 有权
标题翻译：半导体发光元件，照明模块，照明装置以及半导体发光元件的制造方法
公开(公告)号：US07622743B2
公开(公告)日：2009-11-24
申请号：US10577780
申请日：2004-11-01
申请人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
发明人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/385 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2221/68363 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.
摘要翻译：作为一种半导体发光器件（2）的LED裸芯片包括由p-GaN层（12），InGaN / GaN MQW发光层（14）和n（n）组成的多层外延结构（6） -GaN层（16）。在p-GaN层（12）上形成p电极（18），在n-GaN层（16）上形成n电极（20）。在p电极（18）上形成Au镀层（4）。 Au镀层（4）支撑多层外延结构（6）并传导在发光层（14）中产生的热量。 Au镀层（4）通过聚酰亚胺构件（10）电分成两部分。两个部分（4A）中的一个连接到p电极（18），以构成阳极电源端子，另一部分（4K）通过布线（...）连接到n电极（20） 22）构成为阴极电源端子。

10. 发明申请

US20060202211A1 Method for fabricating light-emitting device utilizing substrate transfer by laser decomposition 审中-公开
标题翻译：利用激光分解利用基片转印制造发光器件的方法
公开(公告)号：US20060202211A1
公开(公告)日：2006-09-14
申请号：US11433555
申请日：2006-05-15
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00 , H01L31/12
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/387 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/14
摘要： A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 μm is formed, using an Au layer in the n-side electrode as an underlying layer.
摘要翻译：发光器件包括具有至少两个具有不同导电类型的半导体层的元件结构。在元件结构上形成ITO的透明p侧电极。在p侧电极的区域上形成接合焊盘。在与p侧电极相反的元件结构的表面上形成由Ti / Au构成的n侧电极。使用n侧电极中的Au层作为下层，形成厚度为50μm左右的由镀金制成的金属膜。

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