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1. 发明申请

US20050287771A1 Liquid precursors for the CVD deposition of amorphous carbon films 有权
标题翻译：用于CVD沉积无定形碳膜的液体前体
公开(公告)号：US20050287771A1
公开(公告)日：2005-12-29
申请号：US11065464
申请日：2005-02-24
申请人： Martin Seamons , Wendy Yeh , Sudha Rathi , Deenesh Padhi , Andy Luan , Sum-Yee Tang , Priya Kulkarni , Visweswaren Sivaramakrishnan , Bok Kim , Hichem M'Saad , Yuxiang Wang , Michael Kwan
发明人： Martin Seamons , Wendy Yeh , Sudha Rathi , Deenesh Padhi , Andy Luan , Sum-Yee Tang , Priya Kulkarni , Visweswaren Sivaramakrishnan , Bok Kim , Hichem M'Saad , Yuxiang Wang , Michael Kwan
IPC分类号： C23C16/505 , H01L21/314 , H01L21/768 , H01L21/20 , H01L21/205 , H01L21/36
CPC分类号： C23C16/505 , H01L21/3146 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76829
摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.
摘要翻译：提供用于沉积无定形碳材料的方法。一方面，本发明提供了一种处理衬底的方法，包括将衬底定位在处理室中，将处理气体引入处理室，其中处理气体包括载气，氢气和一种或多种前体化合物，产生处理气体的等离子体，通过从双频RF源施加电力，以及在基板上沉积无定形碳层。

2. 发明申请

US20050150452A1 Process kit design for deposition chamber 审中-公开
标题翻译：沉积室的工艺套件设计
公开(公告)号：US20050150452A1
公开(公告)日：2005-07-14
申请号：US10757021
申请日：2004-01-14
申请人： Soovo Sen , Mark Fodor , Martin Seamons , Priya Kulkarni , Visweswaren Sivaramakrishnan , Sudha Rathi , Tsutomu Shimayama , Thomas Nowak , Wendy Yeh
发明人： Soovo Sen , Mark Fodor , Martin Seamons , Priya Kulkarni , Visweswaren Sivaramakrishnan , Sudha Rathi , Tsutomu Shimayama , Thomas Nowak , Wendy Yeh
IPC分类号： C23C16/44 , C30B25/14 , C23C16/00
CPC分类号： C23C16/4412
摘要： The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner configured to be placed within the processing region of the processing chamber, and a C-channel liner configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.
摘要翻译：本发明提供了一种用于半导体处理室的处理套件。处理室是真空处理室，其包括限定内部处理区域的室主体。处理区域接收用于处理的基板，并且还支持处理套件的设备件。该处理套件包括构造成放置在处理室的处理区域内的泵送衬套，以及构造成沿着泵送衬套的外径放置的C形通道衬套。泵送衬管和C通道衬管具有新颖的互锁特征，其设计用于抑制来自处理区域的处理或清洁气体的寄生泵送。本发明还提供了一种具有改进的处理工具的半导体处理室，例如所述的套件。在一种布置中，室是串联处理室。

3. 发明申请

US20060014397A1 Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon 失效
公开(公告)号：US20060014397A1
公开(公告)日：2006-01-19
申请号：US10891355
申请日：2004-07-13
申请人： Martin Seamons , Wendy Yeh , Sudha Rathi , Heraldo Botelho
发明人： Martin Seamons , Wendy Yeh , Sudha Rathi , Heraldo Botelho
IPC分类号： H01L21/469
CPC分类号： H01L21/02115 , C23C16/26 , C23C16/4401 , C23C16/4404 , C23C16/4405 , H01L21/02271 , H01L21/02274 , H01L21/3146
摘要： A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.

4. 发明申请

US20060222771A1 METHODS FOR THE REDUCTION AND ELIMINATION OF PARTICULATE CONTAMINATION WITH CVD OF AMORPHOUS CARBON 审中-公开
标题翻译：减少和消除不规则碳化物的颗粒污染的方法
公开(公告)号：US20060222771A1
公开(公告)日：2006-10-05
申请号：US11424712
申请日：2006-06-16
申请人： Martin Seamons , Wendy Yeh , Sudha Rathi , Heraldo Botelho
发明人： Martin Seamons , Wendy Yeh , Sudha Rathi , Heraldo Botelho
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/02115 , C23C16/26 , C23C16/4401 , C23C16/4404 , C23C16/4405 , C23C16/505 , H01L21/02274 , H01L21/3146
摘要： A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.
摘要翻译：提供一种沉积在诸如氧化物，氮化物，碳化硅，碳掺杂氧化物等介电材料上的无定形碳层或诸如钨，铝或多晶硅的金属层的方法。该方法包括使用室调节，调节膜厚度可变，间距更宽，可变工艺气体流动，惰性气体沉积后吹扫和沉积后等离子体吹扫等，使沉积无定形碳膜在低沉积温度下可能没有任何缺陷或颗粒污染。

5. 发明申请

US20060231524A1 TECHNIQUES FOR THE USE OF AMORPHOUS CARBON (APF) FOR VARIOUS ETCH AND LITHO INTEGRATION SCHEMES 失效
标题翻译：使用不规则碳（APF）进行各种ETCH和LITHO积分方案的技术
公开(公告)号：US20060231524A1
公开(公告)日：2006-10-19
申请号：US11422031
申请日：2006-06-02
申请人： Wei Liu , Jim He , Sang Ahn , Meihua Shen , Hichem M'Saad , Wendy Yeh , Christopher Bencher
发明人： Wei Liu , Jim He , Sang Ahn , Meihua Shen , Hichem M'Saad , Wendy Yeh , Christopher Bencher
IPC分类号： C23F1/00 , B44C1/22 , G03C5/00 , H01L21/302 , C03C25/68
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

6. 发明申请

US20050167394A1 Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme 有权
标题翻译：用于无定形碳（APF）的各种蚀刻和光刻积分方案的技术
公开(公告)号：US20050167394A1
公开(公告)日：2005-08-04
申请号：US10768724
申请日：2004-01-30
申请人： Wei liu , Jim He , Sang Ahn , Meihua Shen , Hichem M'Saad , Wendy Yeh , Chistopher Bencher
发明人： Wei liu , Jim He , Sang Ahn , Meihua Shen , Hichem M'Saad , Wendy Yeh , Chistopher Bencher
IPC分类号： H01L21/027 , H01L21/033 , H01L21/308 , H01L21/314 , C23F1/00 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

7. 发明申请

US20060292808A1 ABSORBER LAYER FOR DSA PROCESSING 审中-公开
标题翻译：吸收层用于DSA加工
公开(公告)号：US20060292808A1
公开(公告)日：2006-12-28
申请号：US11467074
申请日：2006-08-24
申请人： Luc Autryve , Chris Bencher , Dean Jennings , Haifan Liang , Abhilash Mayur , Mark Yam , Wendy Yeh , Richard Brough
发明人： Luc Autryve , Chris Bencher , Dean Jennings , Haifan Liang , Abhilash Mayur , Mark Yam , Wendy Yeh , Richard Brough
IPC分类号： H01L21/336
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/02354 , H01L21/0276 , H01L21/26513 , H01L21/268 , H01L21/3146 , H01L21/324
摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.
摘要翻译：提供一种处理衬底的方法，包括在衬底上沉积包含非晶碳的层，然后激光退火衬底。任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。一方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收由激光发射的电磁辐射并退火衬底的顶表面层。

8. 发明申请

US20070072422A1 Hydrogen treatment to improve photoresist adhesion and rework consistency 失效
标题翻译：氢处理以提高光致抗蚀剂的附着力和返修一致性
公开(公告)号：US20070072422A1
公开(公告)日：2007-03-29
申请号：US11235298
申请日：2005-09-26
申请人： Wendy Yeh
发明人： Wendy Yeh
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/0206 , H01L21/3105 , H01L21/31058
摘要： A process for selectively removing photoresist, organic overlayers, and/or polymers/residues from a substrate without altering the surface chemistry and adhesion properties of the underlying substrate layers is provided. Generally, the process includes pretreating the substrate with hydrogen (e.g., by way of a hydrogen-based plasma) prior to deposition of a photoresist layer, and then ashing the substrate with a hydrogen-based plasma to selectively remove the photoresist, organic overlayers, and/or polymers/residues from the substrate during etching, post-etch, rework, etc. The hydrogen-based ashing process of the invention may be used post-etch to remove the residue photoresist, or may be used in a rework stripping process to remove misaligned patterns. The hydrogen-based ashing process following the initial hydrogen surface pretreatment substantially reduces surface chemistry poisoning, while retaining adequate adhesion properties following ashing.
摘要翻译：提供了一种从底物中选择性地除去光致抗蚀剂，有机覆盖层和/或聚合物/残余物而不改变下面的基底层的表面化学性质和粘合性能的方法。通常，该方法包括在沉积光致抗蚀剂层之前用氢（例如，通过基于氢的等离子体）预处理衬底，然后用基于氢的等离子体灰化衬底以选择性地去除光致抗蚀剂，有机覆盖层，和/或在蚀刻，蚀刻后，返工等中的来自衬底的聚合物/残余物。本发明的基于氢的灰化方法可以在蚀刻后用于除去残留光致抗蚀剂，或者可以用于返工剥离过程去除不对齐的图案。在初始氢表面预处理之后的氢基灰化过程基本上减少了表面化学中毒，同时在灰化后保持了足够的粘附性能。

9. 发明申请

US20080096138A1 Method of reducing critical dimension bias during fabrication of a semiconductor device 有权
标题翻译：在半导体器件制造期间减小临界尺寸偏压的方法
公开(公告)号：US20080096138A1
公开(公告)日：2008-04-24
申请号：US11983450
申请日：2007-11-09
申请人： Christopher Bencher , Melvin Montgomery , Alexander Buxbaum , Yung-Hee Lee , Jian Ding , Gilad Almogy , Wendy Yeh
发明人： Christopher Bencher , Melvin Montgomery , Alexander Buxbaum , Yung-Hee Lee , Jian Ding , Gilad Almogy , Wendy Yeh
IPC分类号： G03F7/00
CPC分类号： G03F1/68 , G03F1/46 , G03F1/80
摘要： An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.
摘要翻译：当在半导体器件制造工艺中使用掩模版时，在掩模版的制造期间留在辐射阻挡层上的抗反射硬掩模层提供了功能。

10. 发明申请

US20050170655A1 Reticle fabrication using a removable hard mask 有权
标题翻译：使用可移除的硬掩模的标线制造
公开(公告)号：US20050170655A1
公开(公告)日：2005-08-04
申请号：US10768919
申请日：2004-01-30
申请人： Christopher Bencher , Melvin Montgomery , Alexander Buxbaum , Yung-Hee Lee , Jian Ding , Gilad Almogy , Wendy Yeh
发明人： Christopher Bencher , Melvin Montgomery , Alexander Buxbaum , Yung-Hee Lee , Jian Ding , Gilad Almogy , Wendy Yeh
IPC分类号： G03F1/08 , G03F7/09 , H01L21/311
CPC分类号： G03F1/68 , G03F1/46 , G03F1/80
摘要： We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.
摘要翻译：我们已经减少了标线制造的临界尺寸偏差。图案转印到掩模版基板的辐射阻挡层基本上取决于使用从光致抗蚀剂转移图案的硬掩模。在图案转印到硬掩模期间发生的光致抗蚀剂拉回最小化。此外，具有与防辐射层的反射特性相匹配的抗反射性能的硬掩模材料能够降低临界尺寸尺寸并改善硬掩模本身中图案特征的完整性。当在半导体器件制造工艺中使用掩模版时，留在辐射阻挡层上的抗反射硬掩模层提供功能。

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