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1. 发明授权

US6066864A Thyristor with integrated dU/dt protection 有权
标题翻译：具有集成dU / dt保护的晶闸管
公开(公告)号：US6066864A
公开(公告)日：2000-05-23
申请号：US194178
申请日：1998-11-20
申请人： Martin Ruff , Hans-Joachim Schulze , Frank Pfirsch
发明人： Martin Ruff , Hans-Joachim Schulze , Frank Pfirsch
IPC分类号： H01L29/10 , H01L29/74
CPC分类号： H01L29/7424 , H01L29/102 , H01L29/7428
摘要： Given too great a dU/dt load of a thyristor, this can trigger in uncontrolled fashion in the region of the cathode surface. Since the plasma only propagates poorly there and the current density consequently reaches critical values very quickly, there is the risk of destruction of the thyristor due to local overheating. The proposed thyristor has a centrally placed BOD structure and a plurality of auxiliary thyristors (1.-5. AG) annularly surrounding the BOD structure. The resistance of the cathode-side base (8) is locally increased under the emitter region (11) allocated to the innermost auxiliary thyristor (1. AG). Since the width (L) and the sheet resistivity of this annular zone (15) critically influences the dU/dt loadability of the first auxiliary thyristor (1. AG), a suitable dimensioning of these parameters assures that the central thyristor region comprises the smallest dU/dt sensitivity of the system and, accordingly, it also ignites first given upward transgression of a critical value of the voltage steepness.
摘要翻译： PCT No.PCT / DE97 / 00927 Sec。 371日期：1998年11月20日 102（e）1998年11月20日日期PCT提交1997年5月7日PCT公布。公开号WO97 / 44827 日期1997年11月27日由于晶闸管的dU / dt负载太大，这可能会在阴极表面的区域以不受控制的方式触发。由于等离子体仅在那里传播不良，电流密度因此很快达到临界值，所以存在由于局部过热而导致晶闸管损坏的风险。所提出的晶闸管具有中心放置的BOD结构和环绕着BOD结构的多个辅助晶闸管（1.-5·AG）。在分配给最内侧辅助晶闸管（1.AG）的发射极区域（11）处，阴极侧基极（8）的电阻局部增加。由于该环形区域（15）的宽度（L）和薄层电阻率严重影响第一辅助晶闸管（1.AG）的dU / dt负载能力，所以这些参数的合适尺寸确保了中央晶闸管区域包括最小系统的dU / dt灵敏度，因此也会首先给出电压陡度的临界值的向上偏移。

2. 发明授权

US06373079B1 Thyristor with breakdown region 有权
标题翻译：晶闸管具有击穿区域
公开(公告)号：US06373079B1
公开(公告)日：2002-04-16
申请号：US09281692
申请日：1999-03-30
申请人： Martin Ruff , Hans-Joachim Schulze
发明人： Martin Ruff , Hans-Joachim Schulze
IPC分类号： H01L2974
CPC分类号： H01L21/263 , H01L29/1016 , H01L29/102 , H01L29/32 , H01L29/7424
摘要： The thyristor is based on a semiconductor body with an anode-side base zone of the first conductivity type and one or more cathode-side base zones of the opposite, second conductivity type. Anode-side and cathode-side emitter zones are provided, and at least one region in the cathode-side base zone whose geometry gives it a reduced breakdown voltage as compared with the remaining regions in the cathode-side base zone and the edge of the semiconductor body. At the anode, below the region of reduced breakdown voltage, the thyristor has at least one recombination zone in which the free charge carriers have a reduced lifetime.
摘要翻译：晶闸管基于具有第一导电类型的阳极侧基极区域和相对的第二导电类型的一个或多个阴极侧基极区域的半导体本体。提供阳极侧和阴极侧发射区，阴极侧基区中的至少一个区域与阴极侧基区中的剩余区域和阴极侧基极区域的边缘相比几何形状具有降低的击穿电压半导体体。在阳极处，在降低的击穿电压的区域之下，晶闸管具有至少一个复合区，其中游离载流子具有降低的寿命。

3. 发明授权

US06351024B1 Power semiconductor diode 有权
标题翻译：功率半导体二极管
公开(公告)号：US06351024B1
公开(公告)日：2002-02-26
申请号：US09245207
申请日：1999-02-05
申请人： Martin Ruff , Hans-Joachim Schulze
发明人： Martin Ruff , Hans-Joachim Schulze
IPC分类号： H01L2936
CPC分类号： H01L29/0661 , H01L29/32 , H01L29/861
摘要： A semiconductor body including a first surface, a second surface, and a base doping for electrical conductivity. A first doped region is on the first surface and a second doped is on the second surface. The two doped regions are doped with opposites signs for electrical conductivity. A contact is positioned on each of the two doped regions. Another region is within the semiconductor body and has an outer section in which the charge carrier concentration in the outer section is lower due to the reduction of the concentration of dopant in the first doped region and/or the increase of concentration of recombination centers in the outer section.
摘要翻译：一种半导体本体，包括第一表面，第二表面和用于导电性的基底掺杂。第一掺杂区域在第一表面上，第二掺杂区域位于第二表面上。两个掺杂区域掺杂有相反的电导率符号。接触位于两个掺杂区域中的每一个上。另一区域在半导体本体内，并且具有外部部分，其中由于第一掺杂区域中的掺杂剂的浓度的降低和/或在第二掺杂区域中的复合中心的浓度的增加，外部部分中的载流子浓度较低外部部分。

4. 发明授权

US07521730B1 Thyristor arrangement with turnoff protection 有权
标题翻译：晶闸管布置具有断路保护功能
公开(公告)号：US07521730B1
公开(公告)日：2009-04-21
申请号：US10089303
申请日：2000-09-29
申请人： Franz Josef Niedernostheide , Martin Ruff
发明人： Franz Josef Niedernostheide , Martin Ruff
IPC分类号： H01L29/74
CPC分类号： H01L27/0817 , H01L29/7428 , H03K17/08144 , H03K17/79
摘要： A thyristor arrangement includes a main thyristor, at least one auxiliary thyristor, a resistance device which electrically connects the auxiliary thyristor and the main thyristor to one another, and an optical triggering device for breakover triggering of the main thyristor via the auxiliary thyristor and the resistance device. The resistance device defines a time-dependent ohmic resistance in such a way that the value thereof is relatively large during a switch-on phase of the main thyristor and relatively small during a current-carrying phase of the main thyristor.
摘要翻译：晶闸管装置包括主晶闸管，至少一个辅助晶闸管，将辅助晶闸管和主晶闸管彼此电连接的电阻装置，以及用于通过辅助晶闸管和电阻断开触发主晶闸管的光触发装置设备。电阻器件以这样的方式定义时间依赖欧姆电阻，使得其在主晶闸管的接通阶段期间的值相对较大，并且在主晶闸管的电流承载阶段期间相对较小。

5. 发明授权

US06515531B2 Multichip configuration 有权
公开(公告)号：US06515531B2
公开(公告)日：2003-02-04
申请号：US09894679
申请日：2001-06-28
申请人： Martin Ruff , Benno Weis
发明人： Martin Ruff , Benno Weis
IPC分类号： H03K508
CPC分类号： H03K17/08128 , H03K17/12 , H03K17/127
摘要： A multichip configuration in which a plurality of semiconductor chips in a module are connected together in such a way that the voltage drop across internal gate resistors is minimized, in order in the event of a short circuit to prevent the short circuit current rising with the gate voltage.

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