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1. 发明授权

US6066864A Thyristor with integrated dU/dt protection 有权
标题翻译：具有集成dU / dt保护的晶闸管
公开(公告)号：US6066864A
公开(公告)日：2000-05-23
申请号：US194178
申请日：1998-11-20
申请人： Martin Ruff , Hans-Joachim Schulze , Frank Pfirsch
发明人： Martin Ruff , Hans-Joachim Schulze , Frank Pfirsch
IPC分类号： H01L29/10 , H01L29/74
CPC分类号： H01L29/7424 , H01L29/102 , H01L29/7428
摘要： Given too great a dU/dt load of a thyristor, this can trigger in uncontrolled fashion in the region of the cathode surface. Since the plasma only propagates poorly there and the current density consequently reaches critical values very quickly, there is the risk of destruction of the thyristor due to local overheating. The proposed thyristor has a centrally placed BOD structure and a plurality of auxiliary thyristors (1.-5. AG) annularly surrounding the BOD structure. The resistance of the cathode-side base (8) is locally increased under the emitter region (11) allocated to the innermost auxiliary thyristor (1. AG). Since the width (L) and the sheet resistivity of this annular zone (15) critically influences the dU/dt loadability of the first auxiliary thyristor (1. AG), a suitable dimensioning of these parameters assures that the central thyristor region comprises the smallest dU/dt sensitivity of the system and, accordingly, it also ignites first given upward transgression of a critical value of the voltage steepness.
摘要翻译： PCT No.PCT / DE97 / 00927 Sec。 371日期：1998年11月20日 102（e）1998年11月20日日期PCT提交1997年5月7日PCT公布。公开号WO97 / 44827 日期1997年11月27日由于晶闸管的dU / dt负载太大，这可能会在阴极表面的区域以不受控制的方式触发。由于等离子体仅在那里传播不良，电流密度因此很快达到临界值，所以存在由于局部过热而导致晶闸管损坏的风险。所提出的晶闸管具有中心放置的BOD结构和环绕着BOD结构的多个辅助晶闸管（1.-5·AG）。在分配给最内侧辅助晶闸管（1.AG）的发射极区域（11）处，阴极侧基极（8）的电阻局部增加。由于该环形区域（15）的宽度（L）和薄层电阻率严重影响第一辅助晶闸管（1.AG）的dU / dt负载能力，所以这些参数的合适尺寸确保了中央晶闸管区域包括最小系统的dU / dt灵敏度，因此也会首先给出电压陡度的临界值的向上偏移。

2. 发明授权

US10566462B2 Bipolar semiconductor device and manufacturing method 有权
公开(公告)号：US10566462B2
公开(公告)日：2020-02-18
申请号：US12512285
申请日：2009-07-30
申请人： Hans-Joachim Schulze , Frank Pfirsch , Franz-Josef Niedernostheide
发明人： Hans-Joachim Schulze , Frank Pfirsch , Franz-Josef Niedernostheide
IPC分类号： H01L29/861
摘要： A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure.

3. 发明授权

US08809971B2 Semiconductor component 有权
标题翻译：半导体元件
公开(公告)号：US08809971B2
公开(公告)日：2014-08-19
申请号：US12861153
申请日：2010-08-23
申请人： Hans-Joachim Schulze , Frank Pfirsch
发明人： Hans-Joachim Schulze , Frank Pfirsch
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/51 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/7395 , H01L29/7397 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component comprising a semiconductor body, a channel zone in the semiconductor body, a channel control electrode adjacent to the channel zone, and a dielectric layer between the channel zone and the channel control electrode, wherein the dielectric layer has a relative dielectric constant ∈r with a negative temperature coefficient.
摘要翻译：一种半导体元件，包括半导体本体，半导体主体中的沟道区，与沟道区相邻的沟道控制电极，以及沟道区和沟道控制电极之间的介电层，其中介电层具有相对介电常数ε r具有负温度系数。

4. 发明授权

US08482062B2 Semiconductor device having a floating semiconductor zone 有权
标题翻译：具有浮动半导体区的半导体器件
公开(公告)号：US08482062B2
公开(公告)日：2013-07-09
申请号：US13610240
申请日：2012-09-11
申请人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
发明人： Frank Pfirsch , Maria Cotorogea , Franz Hirler , Franz-Josef Niedernostheide , Thomas Raker , Hans-Joachim Schulze , Hans Peter Felsl
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.
摘要翻译：半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性。通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

5. 发明授权

US08461648B2 Semiconductor component with a drift region and a drift control region 有权
公开(公告)号：US08461648B2
公开(公告)日：2013-06-11
申请号：US11996906
申请日：2006-07-27
申请人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
发明人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
IPC分类号： H01L29/732
CPC分类号： H01L29/7803 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4916 , H01L29/66734 , H01L29/7802 , H01L29/7804 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

6. 发明申请

US20110215858A1 CONTROLLING THE RECOMBINATION RATE IN A BIPOLAR SEMICONDUCTOR COMPONENT 有权
标题翻译：控制双极半导体元件的重构速率
公开(公告)号：US20110215858A1
公开(公告)日：2011-09-08
申请号：US12718381
申请日：2010-03-05
申请人： Anton Mauder , Franz Hirler , Frank Pfirsch , Hans-Joachim Schulze
发明人： Anton Mauder , Franz Hirler , Frank Pfirsch , Hans-Joachim Schulze
IPC分类号： H03K17/0412 , H01L29/739
CPC分类号： H01L29/739 , H03K17/0412
摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.
摘要翻译：公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。

7. 发明授权

US07696600B2 IGBT device and related device having robustness under extreme conditions 有权
标题翻译： IGBT器件及相关器件在极端条件下具有鲁棒性
公开(公告)号：US07696600B2
公开(公告)日：2010-04-13
申请号：US11713226
申请日：2007-03-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
IPC分类号： H01L29/10 , H01L29/72
CPC分类号： H01L29/0834 , H01L29/7395 , H01L29/861
摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.
摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。多个半导体区域位于场停止层内。

8. 发明申请

US20090130806A1 POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AND METHOD FOR THE FABRICATION THEREOF 有权
标题翻译：具有电荷补偿结构的功率半导体元件及其制造方法
公开(公告)号：US20090130806A1
公开(公告)日：2009-05-21
申请号：US12350776
申请日：2009-01-08
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L21/336
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要翻译：具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂壁，形成电荷补偿区的互补掺杂壁。

9. 发明申请

US20090032851A1 Method for Producing a Semiconductor Body Having a Recombination Zone, Semiconductor Component Having a Recombination Zone, and Method for Producing Such a Semiconductor Component 有权
标题翻译：具有重组区域的半导体本体的制造方法，具有重组区域的半导体元件及其制造方法
公开(公告)号：US20090032851A1
公开(公告)日：2009-02-05
申请号：US12170470
申请日：2008-07-10
申请人： Frank Pfirsch , Hans-Joachim Schulze
发明人： Frank Pfirsch , Hans-Joachim Schulze
IPC分类号： H01L21/22 , H01L29/78
CPC分类号： H01L29/0623 , H01L21/221 , H01L21/26506 , H01L29/0634 , H01L29/0834 , H01L29/1095 , H01L29/167 , H01L29/36 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7811 , H01L29/861 , H01L29/8611
摘要： In a method for producing a semiconductor body, impurities which act as recombination centers in the semiconductor body and form a recombination zone are introduced into the semiconductor body during the process of producing the semiconductor body. In a semiconductor component, comprising a semiconductor body having a front surface and an opposite rear surface, and also a recombination zone formed by impurities between the front and rear surfaces, wherein the impurities act as recombination centres, the surface state density at the front and rear surfaces of the semiconductor body is just as high as the surface state density at a front and rear surface of an identical semiconductor body without a recombination zone.
摘要翻译：在制造半导体体的方法中，在制造半导体体的过程中，在半导体本体中作为复合中心并形成复合区的杂质被引入半导体本体。在半导体元件中，包括具有前表面和相对后表面的半导体本体，以及由前表面和后表面之间的杂质形成的复合区，其中杂质作为复合中心，前面的表面状态密度和半导体本体的后表面与没有复合区的同一半导体主体的前表面和后表面的表面状态密度一样高。

10. 发明授权

US06963088B2 Semiconductor component 有权
标题翻译：半导体元件
公开(公告)号：US06963088B2
公开(公告)日：2005-11-08
申请号：US10797246
申请日：2004-03-10
申请人： Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Frank Pfirsch
发明人： Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Frank Pfirsch
IPC分类号： H01L21/822 , H01L27/04 , H01L29/74 , H01L29/8605
CPC分类号： H01L29/7408 , H01L29/8605
摘要： A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial dependence of which is preferably configured such that the differential resistance dR is radially constant or the power dissipated in the resistance is radially constant.
摘要翻译：半导体部件布置在半导体本体中并且具有至少一个具有位置相关薄片电阻的集成的径向对称横向电阻，其径向相关性优选地构造成使得差动电阻dR是径向恒定的或在电阻是径向恒定的。

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