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1. 发明申请

US20070147762A1 Interface for a-Si waveguides and III/V waveguides 失效
标题翻译：用于a-Si波导和III / V波导的接口
公开(公告)号：US20070147762A1
公开(公告)日：2007-06-28
申请号：US11545061
申请日：2006-10-06
申请人： Martin Kwakernaak , Winston Chan , David Capewell , Hooman Mohseni
发明人： Martin Kwakernaak , Winston Chan , David Capewell , Hooman Mohseni
IPC分类号： G02B6/10
CPC分类号： G02B6/12002 , B82Y20/00 , G02B6/12004 , G02B6/136 , G02B2006/12121 , G02B2006/12147 , H01S5/026 , H01S5/34306
摘要： A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.
摘要翻译：描述了将波导耦合到衬底上的多层有源器件结构的方法。该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓，通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层，以及在所述蚀刻的有源器件结构上沉积所述波导，其中在所述接合区域处形成倾斜的有源无源结，以减少所形成的耦合器件中的残余界面反射。还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。这包括沉积用作蚀刻掩模的SiN层，图案化光致抗蚀剂掩模，通过反应离子蚀刻图案化SiN层，剥离光致抗蚀剂掩模和蚀刻至少一个激光层。

2. 发明申请

US20050117844A1 Method and system for coupling waveguides 审中-公开
标题翻译：用于耦合波导的方法和系统
公开(公告)号：US20050117844A1
公开(公告)日：2005-06-02
申请号：US10831535
申请日：2004-04-23
申请人： Joseph Abeles , David Capewell , Lou DiMarco , Martin Kwakernaak , Nagendranath Maley , Hooman Mohseni , Ralph Whaley , Liyou Yang
发明人： Joseph Abeles , David Capewell , Lou DiMarco , Martin Kwakernaak , Nagendranath Maley , Hooman Mohseni , Ralph Whaley , Liyou Yang
IPC分类号： G02B6/12 , G02B6/122 , G02B6/132 , G02B6/42 , G02B6/26
CPC分类号： G02B6/132 , B82Y20/00 , G02B6/12004 , G02B6/122 , G02B6/1223 , G02B6/424 , G02B2006/12121 , G02B2006/12123 , G02B2006/12142
摘要： A method for photonically coupling to at least one active photonic device structure formed on a substrate, the method including: etching the active device structure with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to the substrate; and, depositing at least one waveguide over the etched terminice and at least a portion of the substrate; wherein, the waveguide is photonically coupled to the etched active device structure to provide photonic interconnectivity for the etched active device structure.
摘要翻译：一种用于光子耦合到在衬底上形成的至少一个有源光子器件结构的方法，所述方法包括：以高选择性向结晶平面蚀刻有源器件结构，以相对于衬底形成倾斜的终端; 以及在蚀刻的端子和衬底的至少一部分上沉积至少一个波导; 其中，所述波导光学耦合到所述蚀刻的有源器件结构，以为蚀刻的有源器件结构提供光子互连。

3. 发明授权

US07773840B2 Interface for a-Si waveguides and III/V waveguides 失效
标题翻译：用于a-Si波导和III / V波导的接口
公开(公告)号：US07773840B2
公开(公告)日：2010-08-10
申请号：US11545061
申请日：2006-10-06
申请人： Martin H. Kwakernaak , Winston Kong Chan , David Capewell , Hooman Mohseni
发明人： Martin H. Kwakernaak , Winston Kong Chan , David Capewell , Hooman Mohseni
IPC分类号： G02B6/26
CPC分类号： G02B6/12002 , B82Y20/00 , G02B6/12004 , G02B6/136 , G02B2006/12121 , G02B2006/12147 , H01S5/026 , H01S5/34306
摘要： A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.
摘要翻译：描述了将波导耦合到衬底上的多层有源器件结构的方法。该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓，通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层，以及在所述蚀刻的有源器件结构上沉积所述波导，其中在所述接合区域处形成倾斜的有源无源结，以减少所形成的耦合器件中的残余界面反射。还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。这包括沉积用作蚀刻掩模的SiN层，图案化光致抗蚀剂掩模，通过反应离子蚀刻图案化SiN层，剥离光致抗蚀剂掩模和蚀刻至少一个激光层。

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