会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Interface for a-Si waveguides and III/V waveguides
    • 用于a-Si波导和III / V波导的接口
    • US07773840B2
    • 2010-08-10
    • US11545061
    • 2006-10-06
    • Martin H. KwakernaakWinston Kong ChanDavid CapewellHooman Mohseni
    • Martin H. KwakernaakWinston Kong ChanDavid CapewellHooman Mohseni
    • G02B6/26
    • G02B6/12002B82Y20/00G02B6/12004G02B6/136G02B2006/12121G02B2006/12147H01S5/026H01S5/34306
    • A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.
    • 描述了将波导耦合到衬底上的多层有源器件结构的方法。 该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓,通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层,以及 在所述蚀刻的有源器件结构上沉积所述波导,其中在所述接合区域处形成倾斜的有源无源结,以减少所形成的耦合器件中的残余界面反射。 还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。 这包括沉积用作蚀刻掩模的SiN层,图案化光致抗蚀剂掩模,通过反应离子蚀刻图案化SiN层,剥离光致抗蚀剂掩模和蚀刻至少一个激光层。
    • 2. 发明申请
    • Interface for a-Si waveguides and III/V waveguides
    • 用于a-Si波导和III / V波导的接口
    • US20070147762A1
    • 2007-06-28
    • US11545061
    • 2006-10-06
    • Martin KwakernaakWinston ChanDavid CapewellHooman Mohseni
    • Martin KwakernaakWinston ChanDavid CapewellHooman Mohseni
    • G02B6/10
    • G02B6/12002B82Y20/00G02B6/12004G02B6/136G02B2006/12121G02B2006/12147H01S5/026H01S5/34306
    • A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.
    • 描述了将波导耦合到衬底上的多层有源器件结构的方法。 该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓,通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层,以及 在所述蚀刻的有源器件结构上沉积所述波导,其中在所述接合区域处形成倾斜的有源无源结,以减少所形成的耦合器件中的残余界面反射。 还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。 这包括沉积用作蚀刻掩模的SiN层,图案化光致抗蚀剂掩模,通过反应离子蚀刻图案化SiN层,剥离光致抗蚀剂掩模和蚀刻至少一个激光层。