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1. 发明授权

US08675704B2 Single ridge N-P-N diode laser 有权
标题翻译：单脊N-P-N二极管激光器
公开(公告)号：US08675704B2
公开(公告)日：2014-03-18
申请号：US13098248
申请日：2011-04-29
申请人： Joseph Hy Abeles , Zane Alan Shellenbarger , Winston Kong Chan , Alan Michael Braun
发明人： Joseph Hy Abeles , Zane Alan Shellenbarger , Winston Kong Chan , Alan Michael Braun
IPC分类号： H01S5/026 , H01S5/323
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0421 , H01S5/2036 , H01S5/22 , H01S5/3409 , H01S2301/166
摘要： The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.
摘要翻译：本发明涉及一种二极管激光器及其制造方法。在一个实施例中，二极管激光器包括无源基座层结构，位于无源基座层结构上方的有源脊层结构，接触有源脊层结构的顶侧的p接触，设置在所述有源脊层结构的第一侧，设置在所述有源脊层结构的第二侧上的第二n型触点，以及连接所述第一n型接触金属和所述第二n型接触金属的n型金属层，其中所述n最终金属层在所述有源脊层结构上是连续的。

2. 发明申请

US20070247241A1 BATCH-FABRICATED, RF-INTERROGATED, END TRANSITION, CHIP-SCALE ATOMIC CLOCK 失效
标题翻译：批量制造，射频内插，终端转换，芯片尺寸原子钟
公开(公告)号：US20070247241A1
公开(公告)日：2007-10-25
申请号：US11736657
申请日：2007-04-18
申请人： Alan Michael Braun , Joseph Hy Abeles , Winston Kong Chan , Martin Kwakernaak , Timothy James Davis
发明人： Alan Michael Braun , Joseph Hy Abeles , Winston Kong Chan , Martin Kwakernaak , Timothy James Davis
IPC分类号： H01S1/06
CPC分类号： G04F5/14 , H01S5/141
摘要： A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition. The atomic time/frequency reference includes an alkali vapor cell containing alkali atoms, preferably cesium atoms, flex circuits for physically supporting, heating, and thermally isolating the alkali vapor cell, a laser source for pumping alkali atoms within the alkali vapor cell into an end resonance state by applying an optical signal along a first axis, a photodetector for detecting a second optical signal emanating from the alkali vapor cell along the first axis, a pair of RF excitation coils for applying an RF-interrogation signal to the alkali atoms along a second axis perpendicular to the first axis, a pair of bias coils for applying a uniform DC magnetic field along the first axis, and a pair of Zeeman coils for applying a Zeeman interrogation signal to the alkali atoms and oriented and configured to apply a time-varying magnetic field along the second axis through the alkali vapor cell. Another flex circuit is used for physically supporting the laser source, for heating the laser source, and for providing thermal isolation of the laser source. The laser source can be a vertical cavity surface emitting laser (VSCEL). The bias coils can be Helmholtz coils.
摘要翻译：公开了一种芯片级原子钟，其提供在终端状态转换时采用直接RF询问的低功率原子时间/频率参考。原子时间/频率参考值包括含有碱金属，优选铯原子的碱性蒸汽池，用于物理支撑，加热和热分离碱性蒸汽池的柔性电路，用于将碱性蒸气室内的碱性原子泵送到末端的激光源通过沿着第一轴施加光信号的共振状态，用于检测沿着第一轴从碱蒸气单元发出的第二光信号的光检测器，一对RF激励线圈，用于沿着第一轴向碱金属原子施加RF询问信号与第一轴垂直的第二轴，用于沿着第一轴施加均匀的DC磁场的一对偏置线圈，以及一对塞曼线圈，用于向碱原子施加塞曼询问信号，并且被定向和配置为施加时间 - 沿着第二轴的变化的磁场通过碱性蒸汽池。另一个柔性电路用于物理支撑激光源，用于加热激光源，并提供激光源的热隔离。激光源可以是垂直腔表面发射激光器（VSCEL）。偏置线圈可以是亥姆霍兹线圈。

3. 发明申请

US20110274130A1 SINGLE RIDGE N-P-N DIODE LASER 有权
标题翻译：单路N-P-N二极管激光器
公开(公告)号：US20110274130A1
公开(公告)日：2011-11-10
申请号：US13098248
申请日：2011-04-29
申请人： Joseph Hy Abeles , Zane Alan Shellenbarger , Winston Kong Chan , Alan Michael Braun
发明人： Joseph Hy Abeles , Zane Alan Shellenbarger , Winston Kong Chan , Alan Michael Braun
IPC分类号： H01S5/22 , H01L21/28
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0421 , H01S5/2036 , H01S5/22 , H01S5/3409 , H01S2301/166
摘要： The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.
摘要翻译：本发明涉及一种二极管激光器及其制造方法。在一个实施例中，二极管激光器包括无源基座层结构，位于无源基座层结构上方的有源脊层结构，接触有源脊层结构的顶侧的p接触，设置在所述有源脊层结构的第一侧，设置在所述有源脊层结构的第二侧上的第二n型触点，以及连接所述第一n型接触金属和所述第二n型接触金属的n型金属层，其中所述n最终金属层在所述有源脊层结构上是连续的。

4. 发明授权

US07773840B2 Interface for a-Si waveguides and III/V waveguides 失效
标题翻译：用于a-Si波导和III / V波导的接口
公开(公告)号：US07773840B2
公开(公告)日：2010-08-10
申请号：US11545061
申请日：2006-10-06
申请人： Martin H. Kwakernaak , Winston Kong Chan , David Capewell , Hooman Mohseni
发明人： Martin H. Kwakernaak , Winston Kong Chan , David Capewell , Hooman Mohseni
IPC分类号： G02B6/26
CPC分类号： G02B6/12002 , B82Y20/00 , G02B6/12004 , G02B6/136 , G02B2006/12121 , G02B2006/12147 , H01S5/026 , H01S5/34306
摘要： A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.
摘要翻译：描述了将波导耦合到衬底上的多层有源器件结构的方法。该方法包括通过蚀刻有源器件结构形成接合区域以相对于衬底形成倾斜的蚀刻轮廓，通过与多层有源器件结构相邻的蚀刻停止来对准多层有源器件结构的多个层，以及在所述蚀刻的有源器件结构上沉积所述波导，其中在所述接合区域处形成倾斜的有源无源结，以减少所形成的耦合器件中的残余界面反射。还描述了用于去除形成无源非晶硅波导的倾斜结区域中的至少一个激光层的方法。这包括沉积用作蚀刻掩模的SiN层，图案化光致抗蚀剂掩模，通过反应离子蚀刻图案化SiN层，剥离光致抗蚀剂掩模和蚀刻至少一个激光层。

5. 发明申请

US20090066430A1 BATCH-FABRICATED, RF-INTERROGATED, END TRANSITION, CHIP-SCALE ATOMIC CLOCK 有权
标题翻译：批量制造，射频内插，终端转换，芯片尺寸原子钟
公开(公告)号：US20090066430A1
公开(公告)日：2009-03-12
申请号：US12273852
申请日：2008-11-19
申请人： Alan Michael Braun , Joseph Hy Abeles , Winston Kong Chan , Martin Kwakernaak , Timothy James Davis
发明人： Alan Michael Braun , Joseph Hy Abeles , Winston Kong Chan , Martin Kwakernaak , Timothy James Davis
IPC分类号： H03B17/00 , H03L7/26
CPC分类号： G04F5/14 , H01S5/141
摘要： A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition. The atomic time/frequency reference includes an alkali vapor cell containing alkali atoms, preferably cesium atoms, flex circuits for physically supporting, heating, and thermally isolating the alkali vapor cell, a laser source for pumping alkali atoms within the alkali vapor cell into an end resonance state by applying an optical signal along a first axis, a photodetector for detecting a second optical signal emanating from the alkali vapor cell along the first axis, a pair of RF excitation coils for applying an RF-interrogation signal to the alkali atoms along a second axis perpendicular to the first axis, a pair of bias coils for applying a uniform DC magnetic field along the first axis, and a pair of Zeeman coils for applying a Zeeman interrogation signal to the alkali atoms and oriented and configured to apply a time-varying magnetic field along the second axis through the alkali vapor cell. Another flex circuit is used for physically supporting the laser source, for heating the laser source, and for providing thermal isolation of the laser source. The laser source can be a vertical cavity surface emitting laser (VSCEL). The bias coils can be Helmholtz coils.
摘要翻译：公开了一种芯片级原子钟，其提供在终端状态转换时采用直接RF询问的低功率原子时间/频率参考。原子时间/频率参考值包括含有碱金属，优选铯原子的碱性蒸汽池，用于物理支撑，加热和热分离碱性蒸汽池的柔性电路，用于将碱性蒸气室内的碱性原子泵送到末端的激光源通过沿着第一轴施加光信号的共振状态，用于检测沿着第一轴从碱蒸气单元发出的第二光信号的光检测器，一对RF激励线圈，用于沿着第一轴向碱金属原子施加RF询问信号与第一轴垂直的第二轴，用于沿着第一轴施加均匀的DC磁场的一对偏置线圈，以及一对塞曼线圈，用于向碱原子施加塞曼询问信号，并且被定向和配置为施加时间 - 沿着第二轴的变化的磁场通过碱性蒸汽池。另一个柔性电路用于物理支撑激光源，用于加热激光源，并提供激光源的热隔离。激光源可以是垂直腔表面发射激光器（VSCEL）。偏置线圈可以是亥姆霍兹线圈。

6. 发明授权

US07468637B2 Batch-fabricated, RF-interrogated, end transition, chip-scale atomic clock 失效
标题翻译：批量制造，RF询问，终端转换，芯片级原子钟
公开(公告)号：US07468637B2
公开(公告)日：2008-12-23
申请号：US11736657
申请日：2007-04-18
申请人： Alan Michael Braun , Joseph Hy Abeles , Winston Kong Chan , Martin Kwakernaak , Timothy James Davis
发明人： Alan Michael Braun , Joseph Hy Abeles , Winston Kong Chan , Martin Kwakernaak , Timothy James Davis
IPC分类号： H01S1/06 , H03L7/26
CPC分类号： G04F5/14 , H01S5/141
摘要： A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition. The atomic time/frequency reference includes an alkali vapor cell containing alkali atoms, preferably cesium atoms, flex circuits for physically supporting, heating, and thermally isolating the alkali vapor cell, a laser source for pumping alkali atoms within the alkali vapor cell into an end resonance state by applying an optical signal along a first axis, a photodetector for detecting a second optical signal emanating from the alkali vapor cell along the first axis, a pair of RF excitation coils for applying an RF-interrogation signal to the alkali atoms along a second axis perpendicular to the first axis, a pair of bias coils for applying a uniform DC magnetic field along the first axis, and a pair of Zeeman coils for applying a Zeeman interrogation signal to the alkali atoms and oriented and configured to apply a time-varying magnetic field along the second axis through the alkali vapor cell. Another flex circuit is used for physically supporting the laser source, for heating the laser source, and for providing thermal isolation of the laser source. The laser source can be a vertical cavity surface emitting laser (VSCEL). The bias coils can be Helmholtz coils.
摘要翻译：公开了一种芯片级原子钟，其提供在终端状态转换时采用直接RF询问的低功率原子时间/频率参考。原子时间/频率参考值包括含有碱金属，优选铯原子的碱性蒸汽池，用于物理支撑，加热和热分离碱性蒸汽池的柔性电路，用于将碱性蒸气室内的碱性原子泵送到末端的激光源通过沿着第一轴施加光信号的共振状态，用于检测沿着第一轴从碱蒸气单元发出的第二光信号的光检测器，一对RF激励线圈，用于沿着第一轴向碱金属原子施加RF询问信号与第一轴垂直的第二轴，用于沿着第一轴施加均匀的DC磁场的一对偏置线圈，以及一对塞曼线圈，用于向碱原子施加塞曼询问信号，并且被定向和配置为施加时间 - 沿着第二轴的变化的磁场通过碱性蒸汽池。另一个柔性电路用于物理支撑激光源，用于加热激光源，并提供激光源的热隔离。激光源可以是垂直腔表面发射激光器（VSCEL）。偏置线圈可以是亥姆霍兹线圈。

7. 发明授权

US06836597B2 Scannable mirror arrangement for an interferometer 失效
公开(公告)号：US06836597B2
公开(公告)日：2004-12-28
申请号：US10763999
申请日：2004-01-23
申请人： Winston Kong Chan
发明人： Winston Kong Chan
IPC分类号： G02B626
CPC分类号： G01J3/02 , G01J3/0218 , G01J3/4535
摘要： A scannable mirror employs a mirror movable in an optical waveguide. The optical waveguide may be fluid filled and the mirror may be moved by an electromagnetic or electrostatic motor.

8. 发明申请

US20090152533A1 INCREASING THE EXTERNAL EFFICIENCY OF LIGHT EMITTING DIODES 审中-公开
标题翻译：提高发光二极管的外部效率
公开(公告)号：US20090152533A1
公开(公告)日：2009-06-18
申请号：US11958172
申请日：2007-12-17
申请人： Winston Kong Chan , Viktor B. Khalfin
发明人： Winston Kong Chan , Viktor B. Khalfin
IPC分类号： H01L33/00 , H01L51/00 , H01L21/02
CPC分类号： H01L51/5268 , H01L51/5275
摘要： The present disclosure relates to increasing the external efficiency of light emitting diodes, and specifically to increasing the outcoupling of light from an organic light emitting diode utilizing a diffraction grating.
摘要翻译：本公开涉及增加发光二极管的外部效率，并且具体地涉及利用衍射光栅增加来自有机发光二极管的光的耦合。

9. 发明授权

US06943892B2 Instrument having a multi-mode optical element and method 失效
标题翻译：具有多模光学元件和方法的仪器
公开(公告)号：US06943892B2
公开(公告)日：2005-09-13
申请号：US10763982
申请日：2004-01-23
申请人： Winston Kong Chan
发明人： Winston Kong Chan
IPC分类号： G01B9/02
CPC分类号： G02B6/29346 , G01J3/0218 , G01J3/024 , G01J3/26 , G01J3/45 , G01J3/4535
摘要： An instrument including a scannable mirror employs multimode optical fibers and an optical coupler. Modal dispersion, e.g., from the multimode optical fiber, is reduced by a method employing deconvolution. The scannable mirror may employ a mirror movable in an optical waveguide or an optical fiber wound on an expandable core.
摘要翻译：包括可扫描镜的仪器采用多模光纤和光耦合器。通过采用去卷积的方法来减少来自多模光纤的模态色散。可扫描镜可以使用可在光波导中移动的反射镜或缠绕在可扩展芯上的光纤。

10. 发明申请

US20110168236A1 PORTABLE PHOTOVOLTAICS WITH SCALABLE INTEGRATED CONCENTRATOR OF LIGHT ENERGY 审中-公开
标题翻译：便携式照明灯具可放大的光能集中浓缩器
公开(公告)号：US20110168236A1
公开(公告)日：2011-07-14
申请号：US12785070
申请日：2010-05-21
申请人： Winston Kong Chan , Michael G. Kane
发明人： Winston Kong Chan , Michael G. Kane
IPC分类号： H01L31/055 , H01L31/0216 , H01L31/0232
CPC分类号： H01L31/055 , Y02E10/52
摘要： A luminescent solar concentrator (LSC) for receiving electromagnetic radiation of at least a first wavelength is disclosed. The LSC includes a core layer. A lower clad layer substantially underlies the core layer. At least one photovoltaic (PV) cell is partially embedded in at least one of the core layer and the lower clad layer. At least one dye layer substantially overlies the core layer. The at least one dye layer has embedded therein at least one absorption dipole and at least one emission dipole, the at least one emission dipole being coupled to the at least one absorption dipole. The at least one absorption dipole is configured to absorb the electromagnetic radiation of at least a first wavelength incident from any direction and the at least one emission dipole is configured to emit electromagnetic radiation of at least a second wavelength substantially within at least one of the core layer and the lower clad layer so that the electromagnetic radiation of at least a second wavelength is at least partially absorbed by the at least one PV cell. The at least one absorption dipole is coupled to the at least one emission dipole by Forster resonant energy transfer (FRET).
摘要翻译：公开了一种用于接收至少第一波长的电磁辐射的发光太阳能聚光器（LSC）。 LSC包括核心层。下包层基本上在芯层的下面。至少一个光伏（PV）电池部分地嵌入到芯层和下包层中的至少一个中。至少一个染料层基本上覆盖在芯层上。所述至少一个染料层嵌入其中至少一个吸收偶极子和至少一个发射偶极子，所述至少一个发射偶极子耦合到所述至少一个吸收偶极子。所述至少一个吸收偶极被配置为吸收从任何方向入射的至少第一波长的电磁辐射，并且所述至少一个发射偶极被配置为发射基本上至少一个核心内的至少第二波长的电磁辐射层和下包层，使得至少第二波长的电磁辐射至少部分地被至少一个PV电池吸收。所述至少一个吸收偶极子通过Forster共振能量转移（FRET）耦合到所述至少一个发射偶极子。

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