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    • 6. 发明授权
    • Reticle sorter
    • 标线分选机
    • US06878895B1
    • 2005-04-12
    • US09383508
    • 1999-08-26
    • Patrick J. RyanMichael R. ConboyStephen P. Hovestol
    • Patrick J. RyanMichael R. ConboyStephen P. Hovestol
    • B07C5/344
    • B07C5/344Y10S209/939
    • A reticle sorter and a semiconductor fabrication facility employing one or more reticle sorters is provided. The reticle sorter(s) generally lies between a reticle storage system and a group of one or more photolithography exposure tools (e.g., steppers) and is configured for sorting reticles in one or more cassettes. The use of the reticle sorter provides sorting functionality apart from the reticle storage system and typically closer to the group of photolithography steppers with which it is associated. This can, for example, significantly increase the throughput of semiconductor wafers through the associated photolithography exposure tools as well as in the semiconductor fabrication plant as a whole.
    • 提供了采用一个或多个掩模版分拣机的掩模版分拣机和半导体制造设备。 掩模版分选机通常位于掩模版存储系统和一组一个或多个光刻曝光工具(例如步进器)之间,并且被配置用于将一个或多个盒中的掩模版分类。 标线分类器的使用提供了除了掩模版存储系统之外的分类功能,并且通常更接近与其相关联的光刻步进组。 例如,这可以通过相关的光刻曝光工具以及整个半导体制造工厂显着提高半导体晶片的生产量。
    • 7. 发明授权
    • Managing a semiconductor fabrication facility using wafer lot and cassette attributes
    • 使用晶圆批次和磁带属性管理半导体制造设备
    • US06449522B1
    • 2002-09-10
    • US09193349
    • 1998-11-17
    • Michael R. ConboyPatrick J. RyanElfido Coss, Jr.
    • Michael R. ConboyPatrick J. RyanElfido Coss, Jr.
    • G06F1900
    • H01L21/67294H01L21/67276Y10S414/135Y10S414/137Y10S414/14
    • Systems and methods for managing automated material handling systems, such as semiconductor fabrication facilities, using material item (e.g., wafer lot) attributes and cassette attributes are provided. A semiconductor fabrication facility typically includes multiple wafer lots and multiple cassettes for storing the wafer lots. A system and method, in one embodiment of the invention, includes setting one or more lot attributes for each wafer lot, setting one or more cassette attributes for each cassette, and selecting a particular cassette for holding a particular wafer lot based on the one or more wafer lot attributes of the particular wafer lot and the one or more cassette attributes of the particular cassette. The wafer lot and cassette attributes may, for example, include an attribute identifying a position in a fabrication sequence and one or more attributes indicative of one or more contaminants. By selecting cassettes in this manner, wafer lots and cassettes may, for example, be classified or logically zoned.
    • 提供了用于管理自动化材料处理系统的系统和方法,例如半导体制造设施,使用材料项目(例如,晶片块)属性和盒子属性。 半导体制造设备通常包括多个晶片批次和用于存储晶片批次的多个盒。 在本发明的一个实施例中的系统和方法包括设置每个晶片批次的一个或多个批次属性,为每个盒设置一个或多个盒属性,并且基于该一个或多个盒子选择用于保持特定晶片批次的特定盒 特定晶片批次的更多晶片批次属性和特定盒的一个或多个盒属性。 晶片块和盒属性可以例如包括识别制造序列中的位置的属性和指示一种或多种污染物的一个或多个属性。 通过以这种方式选择盒式磁带,可以对晶片批次和磁带盒进行分类或逻辑划分。
    • 8. 发明授权
    • Laminated hard magnet in MR sensor
    • MR传感器中的层叠硬磁体
    • US06351357B1
    • 2002-02-26
    • US09665782
    • 2000-09-20
    • Song Sheng XueJames F. DolejsiPatrick J. Ryan
    • Song Sheng XueJames F. DolejsiPatrick J. Ryan
    • G11B539
    • B82Y25/00G01R33/093G11B5/3903G11B5/3932
    • A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.
    • 磁阻传感器具有磁阻元件,其具有对磁通量变化敏感的电阻的有源区域。 磁阻元件的相对侧上的两个硬磁体磁偏置磁阻元件。 每个硬磁体包括在纵向一体层叠的硬磁导电材料的两个磁体层之间的软磁导电材料的种子层,使得晶种层和磁体层表现出统一的磁性。 种子层优选为无定形材料,例如氮化硅铝石。 层压结构允许具有低电阻的较厚的磁体结构,但由于增加的厚度而不降低磁性能。
    • 9. 发明授权
    • Method of fabricating a magnetoresistive read sensor
    • 制造磁阻读取传感器的方法
    • US06235342B1
    • 2001-05-22
    • US09651238
    • 2000-08-30
    • Song Sheng XuePatrick J. RyanJames F. Dolejsi
    • Song Sheng XuePatrick J. RyanJames F. Dolejsi
    • B05D512
    • B82Y25/00G01R33/093G11B5/3116G11B5/3163G11B5/3903G11B5/3932
    • An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard-biasing material (110).
    • 公开了改进的磁阻读取传感器(100)和制造消除膜去除的磁阻读取传感器(100)的方法。 通过将第一掩模(128)定位在由于后续层分裂成三个区域的间隙层(104)上而形成磁阻传感器(100)。 第一掩模(128)位于间隙层(104)的中心区域上,并且第一硬偏压材料(106)沉积在间隙层(104)的外部区域上。 去除第一掩模(128)并且将磁阻元件(116)沉积到第一硬偏压材料(106)的外部区域和间隙层(104)的中心区域上,由此形成有源区域(122) ,磁阻传感器(100)的第一无源区(124)和第二无源区(126)。 在所有三个区域中,隔离层(118)沉积到磁阻元件(116)上,并且在所有三个区域中将软相邻层(120)沉积到间隔层(118)上。 第二掩模(134)被定位在传感器的有源区域(122)上方,并且第二硬偏压材料(110)沉积在第一无源区域(124)中的软相邻层(120)上,并且第二被动 区域(126)。 移除第二掩模(134)并将触头(112,114)定位在第二硬偏置材料(110)上。
    • 10. 发明授权
    • Magnetoresistive read sensor
    • 磁阻读取传感器
    • US06229678B1
    • 2001-05-08
    • US09011631
    • 1999-01-07
    • Song Sheng XuePatrick J. RyanJames F. Dolejsi
    • Song Sheng XuePatrick J. RyanJames F. Dolejsi
    • G11B5139
    • B82Y25/00G01R33/093G11B5/3116G11B5/3163G11B5/3903G11B5/3932
    • An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard- biasing material (110).
    • 公开了改进的磁阻读取传感器(100)和制造消除膜去除的磁阻读取传感器(100)的方法。 通过将第一掩模(128)定位在由于后续层分裂成三个区域的间隙层(104)上而形成磁阻传感器(100)。 第一掩模(128)位于间隙层(104)的中心区域上,并且第一硬偏压材料(106)沉积在间隙层(104)的外部区域上。 去除第一掩模(128)并且将磁阻元件(116)沉积到第一硬偏压材料(106)的外部区域和间隙层(104)的中心区域上,由此形成有源区域(122) ,磁阻传感器(100)的第一无源区(124)和第二无源区(126)。 在所有三个区域中,隔离层(118)沉积到磁阻元件(116)上,并且在所有三个区域中将软相邻层(120)沉积到间隔层(118)上。 第二掩模(134)被定位在传感器的有源区域(122)上方,并且第二硬偏压材料(110)沉积在第一无源区域(124)中的软相邻层(120)上,并且第二被动 区域(126)。 移除第二掩模(134)并将触头(112,114)定位在第二硬质偏置材料(110)上。