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1. 发明授权

US07118995B2 Yield improvement in silicon-germanium epitaxial growth 失效
标题翻译：硅锗外延生长的产量提高
公开(公告)号：US07118995B2
公开(公告)日：2006-10-10
申请号：US10709644
申请日：2004-05-19
申请人： Mark D. Dupuis , Wade J. Hodge , Daniel T. Kelly , Ryan W. Wuthrich
发明人： Mark D. Dupuis , Wade J. Hodge , Daniel T. Kelly , Ryan W. Wuthrich
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
摘要翻译：一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。半导体结构的制造以单晶硅（Si）层开始。然后，在单晶Si层中形成第一和第二浅沟槽隔离（STI）区域。 STI区域夹持并限定第一单晶Si区域。接下来，硅锗（SiGe）混合物以SiGe沉积条件沉积在结构的顶部，以便生长（i）第二单晶硅区域从第一单晶硅区域的顶表面生长，（ii）分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内，可以确定满足SiGe沉积条件以进行大规模生产。

2. 发明授权

US07413967B2 Yield improvement in silicon-germanium epitaxial growth 有权
标题翻译：硅锗外延生长的产量提高
公开(公告)号：US07413967B2
公开(公告)日：2008-08-19
申请号：US11468030
申请日：2006-08-29
申请人： Mark D. Dupuis , Wade J. Hodge , Daniel T. Kelly , Ryan W. Wuthrich
发明人： Mark D. Dupuis , Wade J. Hodge , Daniel T. Kelly , Ryan W. Wuthrich
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
摘要翻译：一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。半导体结构的制造以单晶硅（Si）层开始。然后，在单晶Si层中形成第一和第二浅沟槽隔离（STI）区域。 STI区域夹持并限定第一单晶Si区域。接下来，硅锗（SiGe）混合物以SiGe沉积条件沉积在结构的顶部，以便生长（i）第二单晶硅区域从第一单晶硅区域的顶表面生长，（ii）分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内，可以确定满足SiGe沉积条件以进行大规模生产。

3. 发明授权

US06887797B2 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer 失效
标题翻译：在半导体晶片上形成氧氮化物绝缘层的装置和方法
公开(公告)号：US06887797B2
公开(公告)日：2005-05-03
申请号：US10199542
申请日：2002-07-19
申请人： Douglas A. Buchanan , Evgeni P. Gousev , Carol J. Heenan , Wade J. Hodge , Steven M. Shank , Patrick R. Varekamp
发明人： Douglas A. Buchanan , Evgeni P. Gousev , Carol J. Heenan , Wade J. Hodge , Steven M. Shank , Patrick R. Varekamp
IPC分类号： C23C16/30 , C23C16/40 , C23C16/452 , C23C16/453 , H01L21/28 , H01L21/3115 , H01L21/314 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , C23C16/308 , C23C16/401 , C23C16/452 , C23C16/453 , H01L21/28202 , H01L21/28211 , H01L21/2822 , H01L21/3115 , H01L21/3144 , H01L29/518
摘要： An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube. Gas injection orifices on the order of several millimeters then distribute the pre-decomposed gas to the wafers, producing a more uniformly N-doped wafer load in a batch furnace.
摘要翻译：一种在基板上形成氧氮化物绝缘层的装置和方法，其通过将基板放置在炉的主室内的第一温度下，在高于第一温度的第二温度下将基板暴露于含氮气体，并在存在后燃烧气体的情况下在主室内的衬底上生长氧氮化物层。较高温度的含氮气体在主室外的室内燃烧。较高的温度在800至1200℃的范围内，优选950℃。在第二实施例中，主室内的分布式N 2 O气体喷射器输送含氮气体。含氮气体在室外预加热。然后将含氮气体输送到气体歧管，气体歧管分裂气体流并将气体引导到主处理管内的多个气体喷射器，优选两至四个喷射器。大约数毫米的气体注入孔然后将预分解的气体分配到晶片，在间歇炉中产生更均匀的N掺杂晶片负载。

4. 发明授权

US08299500B2 Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region 有权
标题翻译：硅锗异质结双极晶体管在基极区域具有间隙捕获层
公开(公告)号：US08299500B2
公开(公告)日：2012-10-30
申请号：US11161936
申请日：2005-08-23
申请人： Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
发明人： Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
IPC分类号： H01L29/737
CPC分类号： H01L29/7378 , H01L21/8249 , H01L29/1004
摘要： A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.
摘要翻译：异质结双极晶体管（HBT），包括至少一个HBT的集成电路（IC）芯片和形成IC的方法。 HBT包括具有一个或多个掩埋间隙屏障层的外在基底。外部基极可以用硼重掺杂，并且每个掩埋的间隙势垒层掺杂含有碳的掺杂剂，例如碳或SiGe：C。外基的表面可以被硅化。

5. 发明授权

US06436196B1 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer 失效
公开(公告)号：US06436196B1
公开(公告)日：2002-08-20
申请号：US09887505
申请日：2001-06-22
申请人： Douglas A. Buchanan , Evgeni P. Gousev , Carol J. Heenan , Wade J. Hodge , Steven M. Shank , Patrick R. Varekamp
发明人： Douglas A. Buchanan , Evgeni P. Gousev , Carol J. Heenan , Wade J. Hodge , Steven M. Shank , Patrick R. Varekamp
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , C23C16/308 , C23C16/401 , C23C16/452 , C23C16/453 , H01L21/28202 , H01L21/28211 , H01L21/2822 , H01L21/3115 , H01L21/3144 , H01L29/518
摘要： An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube. Gas injection orifices on the order of several millimeters then distribute the pre-decomposed gas to the wafers, producing a more uniformly N-doped wafer load in a batch furnace.

6. 发明申请

US20130005108A1 SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) 有权
标题翻译：硅锗（SiGe）异相双极晶体管（HBT）
公开(公告)号：US20130005108A1
公开(公告)日：2013-01-03
申请号：US13610641
申请日：2012-09-11
申请人： Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
发明人： Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
IPC分类号： H01L21/331
CPC分类号： H01L29/7378 , H01L21/8249 , H01L29/1004
摘要： A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.
摘要翻译：异质结双极晶体管（HBT），包括至少一个HBT的集成电路（IC）芯片和形成IC的方法。 HBT包括具有一个或多个掩埋间隙屏障层的外在基底。外部基极可以用硼重掺杂，并且每个掩埋的间隙势垒层掺杂含有碳的掺杂剂，例如碳或SiGe：C。外基的表面可以被硅化。

7. 发明授权

US08853043B2 Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) 有权
标题翻译：硅锗（SiGe）异质结双极晶体管（HBT）
公开(公告)号：US08853043B2
公开(公告)日：2014-10-07
申请号：US13610641
申请日：2012-09-11
申请人： Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
发明人： Wade J. Hodge , Alvin J. Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley A. Orner
IPC分类号： H01L21/331 , H01L21/8222 , H01L29/737 , H01L29/10 , H01L21/8249
CPC分类号： H01L29/7378 , H01L21/8249 , H01L29/1004
摘要： A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.
摘要翻译：异质结双极晶体管（HBT），包括至少一个HBT的集成电路（IC）芯片和形成IC的方法。 HBT包括具有一个或多个掩埋间隙屏障层的外在基底。外部基极可以用硼重掺杂，并且每个掩埋的间隙势垒层掺杂含有碳的掺杂剂，例如碳或SiGe：C。外基的表面可以被硅化。

8. 发明授权

US06346487B1 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer 失效
标题翻译：在半导体晶片上形成氧氮化物绝缘层的装置和方法
公开(公告)号：US06346487B1
公开(公告)日：2002-02-12
申请号：US09803503
申请日：2001-03-10
申请人： Douglas A. Buchanan , Evgeni P. Gousev , Carol J. Heenan , Wade J. Hodge , Steven M. Shank , Patrick R. Varekamp
发明人： Douglas A. Buchanan , Evgeni P. Gousev , Carol J. Heenan , Wade J. Hodge , Steven M. Shank , Patrick R. Varekamp
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , C23C16/308 , C23C16/401 , C23C16/452 , C23C16/453 , H01L21/28202 , H01L21/28211 , H01L21/2822 , H01L21/3115 , H01L21/3144 , H01L29/518
摘要： An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is higher than the first temperature, and growing the oxynitride layer on the substrate within the main chamber in the presence of post-combusted gases. The higher temperature nitrogen containing gases are combusted in a chamber outside the main chamber. The higher temperature is in the range of 800 to 1200° C., and preferably 950° C. In a second embodiment, distributed N2O gas injectors within the main chamber deliver the nitrogen containing gas. The nitrogen containing gas is pre-heated outside the chamber. The nitrogen containing gas is then delivered to a gas manifold that splits the gas flow and directs the gas to a number of gas injectors, preferably two to four injectors within the main process tube. Gas injection orifices on the order of several millimeters then distribute the pre-decomposed gas to the wafers, producing a more uniformly N-doped wafer load in a batch furnace.
摘要翻译：一种在基板上形成氧氮化物绝缘层的装置和方法，其通过将基板置于炉的主室内的第一温度下，在高于第一温度的第二温度下将基板暴露于含氮气体，并在存在后燃烧气体的情况下在主室内的衬底上生长氧氮化物层。较高温度的含氮气体在主室外的室内燃烧。较高的温度在800至1200℃的范围内，优选950℃。在第二实施例中，主室内的分布式N2O气体喷射器输送含氮气体。含氮气体在室外预加热。然后将含氮气体输送到气体歧管，气体歧管分裂气体流并将气体引导到主处理管内的多个气体喷射器，优选两至四个喷射器。大约数毫米的气体注入孔然后将预分解的气体分配到晶片，在间歇炉中产生更均匀的N掺杂晶片负载。

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