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1. 发明申请

US20060148251A1 Metal etching method for an interconnect structure and metal interconnect structure obtained by such method 有权
标题翻译：通过这种方法获得的互连结构和金属互连结构的金属蚀刻方法
公开(公告)号：US20060148251A1
公开(公告)日：2006-07-06
申请号：US10544607
申请日：2004-02-03
申请人： Marcel Broekaart , Arnoud Fortuin
发明人： Marcel Broekaart , Arnoud Fortuin
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L23/53295 , H01L21/31144 , H01L21/32136 , H01L21/32139 , H01L21/76829 , H01L21/76838 , H01L2924/0002 , H01L2924/00
摘要： A metal interconnects structure, comprises a substrate (11), a dielectric layer (12) lying above the substrate, a stop layer (13) for metal etching lying above the dielectric layer, a metal layer (15′) lying above the stop layer, said metal layer being patterned according to a desired pattern.
摘要翻译：一种金属互连结构，包括基板（11），位于基板上方的电介质层（12），位于电介质层上方的用于金属蚀刻的阻挡层（13），位于阻挡层上方的金属层（15'），所述金属层根据期望的图案进行图案化。

2. 发明申请

US20110097874A1 PROGRESSIVE TRIMMING METHOD 有权
标题翻译：循序渐进的方法
公开(公告)号：US20110097874A1
公开(公告)日：2011-04-28
申请号：US12934026
申请日：2009-07-31
申请人： Marcel Broekaart , Marion Migette , Sebastian Molinari , Eric Neyret
发明人： Marcel Broekaart , Marion Migette , Sebastian Molinari , Eric Neyret
IPC分类号： H01L21/304 , H01L21/306 , B24B1/00
CPC分类号： H01L21/304 , H01L21/76256 , H01L25/50 , H01L2225/06513 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.
摘要翻译：本发明提供了一种修整结构的方法，该结构包括与第二晶片结合的第一晶片，其中第一晶片具有倒角边缘。该方法包括在第一深度上执行的第一修整步骤，该第一深度至少包括第一晶片的厚度以及从第一晶片的边缘确定的第一宽度。然后在包括至少第一晶片的厚度和小于第一宽度的第二宽度的第二深度上进行第二修整步骤。

3. 发明申请

US20110045611A1 METHOD OF INITIATING MOLECULAR BONDING 失效
标题翻译：启动分子结合的方法
公开(公告)号：US20110045611A1
公开(公告)日：2011-02-24
申请号：US12936639
申请日：2009-08-06
申请人： Arnaud Castex , Marcel Broekaart
发明人： Arnaud Castex , Marcel Broekaart
IPC分类号： H01L21/66 , B32B37/10
CPC分类号： H01L21/76251
摘要： The invention relates to a method of initiating molecular bonding, comprising bringing one face (31) of a first wafer (30) to face one face (21) of a second wafer (20) and initiating a point of contact between the two facing faces. The point of contact is initiated by application to one of the two wafers, for example using a bearing element (51) of a tool (50), of a mechanical pressure in the range 0.1 MPa to 33.3 MPa.
摘要翻译：本发明涉及一种引发分子键合的方法，包括使第一晶片（30）的一个面（31）面对第二晶片（20）的一个面（21）并且启动两个相对面之间的接触点。接触点通过应用于两个晶片中的一个，例如使用工具（50）的轴承元件（51），其机械压力范围为0.1MPa至33.3MPa。

4. 发明申请

US20090280595A1 Process for assembling wafers by means of molecular adhesion 失效
标题翻译：通过分子粘附装配晶片的方法
公开(公告)号：US20090280595A1
公开(公告)日：2009-11-12
申请号：US12229248
申请日：2008-08-21
申请人： Marcel Broekaart , Bernard Aspar , Thierry Barge , Chrystelle L. Blanchard
发明人： Marcel Broekaart , Bernard Aspar , Thierry Barge , Chrystelle L. Blanchard
IPC分类号： H01L21/50 , H01L31/00
CPC分类号： H01L21/76256 , C03C27/00 , H01L21/187 , H01L25/0657 , H01L25/50 , H01L27/146 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a process of bonding by molecular adhesion of two layers, such as wafers of semiconductor material, wherein propagation of a first bonding wave is initiated from a pressure point applied to at least one of the two layers, and wherein the first bonding wave step is followed by propagating a second bonding wave over an area, for example, in the vicinity of the pressure point. Propagation of the second bonding wave may be obtained through the interposing of a separation element between the two wafers and the withdrawal of the element, for example, after the beginning of the first bonding wave propagation.
摘要翻译：本发明涉及通过两层分子粘合的方法，例如半导体材料晶片，其中从施加到两层中的至少一层的压力点开始第一结合波的传播，并且其中第一键合随后在例如压力点附近的区域上传播第二结合波。可以通过在两个晶片之间插入分离元件并且例如在第一结合波传播开始之后元件的抽出来获得第二结合波的传播。

5. 发明授权

US09733075B2 System and method for assessing inhomogeneous deformations in multilayer plates 有权
公开(公告)号：US09733075B2
公开(公告)日：2017-08-15
申请号：US13574585
申请日：2011-01-24
申请人： Marcel Broekaart , Arnaud Castex , Laurent Marinier
发明人： Marcel Broekaart , Arnaud Castex , Laurent Marinier
IPC分类号： G01B5/28 , G01B17/06 , G01B21/32 , G01N29/06 , G03F7/20
CPC分类号： G01B17/06 , G01B21/32 , G01N29/0681 , G01N2291/2697 , G03F7/70616 , G03F7/70633
摘要： A method and device for evaluating inhomogeneous deformations in a first wafer bonded by molecular adhesion to a second wafer. This evaluation method includes the steps of making at least one reading of a plurality of measurement points, the reading corresponding to a surface profile of the first wafer along a predefined direction and over a predefined length, computing a second derivative from the measurement points of the surface profile and evaluating a level of inhomogeneous deformations in the first wafer according to the second derivative.

6. 发明授权

US09004135B2 Method and apparatus for bonding together two wafers by molecular adhesion 有权
标题翻译：通过分子粘附将两片晶片粘合在一起的方法和装置
公开(公告)号：US09004135B2
公开(公告)日：2015-04-14
申请号：US13808473
申请日：2011-07-15
申请人： Arnaud Castex , Marcel Broekaart
发明人： Arnaud Castex , Marcel Broekaart
IPC分类号： B32B37/00 , H01L21/67 , H01L21/762
CPC分类号： B32B37/0084 , H01L21/67092 , H01L21/76251 , Y10T156/10
摘要： The invention provides a method of bonding a first wafer onto a second wafer by molecular adhesion, the method comprising applying a point of initiation of a bonding wave between the first and second wafers, the method further comprising projecting a gas stream between the first wafer and the second wafer generally toward the point of initiation of the bonding wave while the bonding wave is propagating between the wafers. The invention also provides a bonding apparatus for carrying out the bonding method.
摘要翻译：本发明提供了一种通过分子粘附将第一晶片接合到第二晶片上的方法，该方法包括在第一和第二晶片之间施加结合波的起始点，该方法还包括将第一晶片和第二晶片通常朝着键合波的起始点移动，同时键合波在晶片之间传播。本发明还提供一种用于实施接合方法的接合装置。

7. 发明申请

US20130054154A1 SYSTEM AND METHOD FOR ASSESSING INHOMOGENEOUS DEFORMATIONS IN MULTILAYER PLATES 有权
标题翻译：用于评估多层板中非均质变形的系统和方法
公开(公告)号：US20130054154A1
公开(公告)日：2013-02-28
申请号：US13574585
申请日：2011-01-24
申请人： Marcel Broekaart , Arnaud Castex , Laurent Marinier
发明人： Marcel Broekaart , Arnaud Castex , Laurent Marinier
IPC分类号： G01B5/30 , G06F19/00
CPC分类号： G01B17/06 , G01B21/32 , G01N29/0681 , G01N2291/2697 , G03F7/70616 , G03F7/70633
摘要： A method and device for evaluating inhomogeneous deformations in a first wafer bonded by molecular adhesion to a second wafer. This evaluation method includes the steps of making at least one reading of a plurality of measurement points, the reading corresponding to a surface profile of the first wafer along a predefined direction and over a predefined length, computing a second derivative from the measurement points of the surface profile and evaluating a level of inhomogeneous deformations in the first wafer according to the second derivative.
摘要翻译：一种用于评估通过分子粘附到第二晶片而接合的第一晶片中的不均匀变形的方法和装置。该评估方法包括以下步骤：沿着预定义的方向和超过预定长度进行多个测量点的至少一次读取，对应于第一晶片的表面轮廓的读数，计算来自第一晶片的测量点的二阶导数表面轮廓和根据二阶导数评估第一晶片中的不均匀变形的水平。

8. 发明申请

US20130032272A1 APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：制造半导体器件的装置
公开(公告)号：US20130032272A1
公开(公告)日：2013-02-07
申请号：US13624470
申请日：2012-09-21
申请人： Marcel Broekaart , Ionut Radu
发明人： Marcel Broekaart , Ionut Radu
IPC分类号： B32B37/10 , B32B38/16 , B32B38/00 , B32B38/18
CPC分类号： H01L25/50 , B32B38/1858 , B32B2309/64 , B32B2309/65 , B32B2309/68 , H01L21/67092 , H01L2924/0002 , Y10T156/10 , H01L2924/00
摘要： The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a vacuum chamber to provide bonding of wafers under pressure below atmospheric pressure; and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. The bonding and loadlock modules remain at a pressure below atmospheric pressure while the wafer is transferred from the loadlock module into the bonding module.
摘要翻译：本发明涉及一种用于制造半导体器件的装置，其中所述装置包括具有真空室的接合模块，以在低于大气压的压力下提供晶片的接合; 以及负载锁模块，其连接到所述接合模块并且被配置为用于晶片转移到所述接合模块。负载锁模块还连接到第一真空泵装置，其被配置成将负载锁模块中的压力降低到低于大气压。接合和负载锁定模块保持在低于大气压力的压力下，同时晶片从负载锁定模块传输到接合模块中。

9. 发明授权

US08932938B2 Method of fabricating a multilayer structure with circuit layer transfer 有权
标题翻译：制造具有电路层转移的多层结构的方法
公开(公告)号：US08932938B2
公开(公告)日：2015-01-13
申请号：US13255670
申请日：2010-03-04
申请人： Arnaud Castex , Marcel Broekaart
发明人： Arnaud Castex , Marcel Broekaart
IPC分类号： H01L21/30 , H01L21/46 , H01L21/20
CPC分类号： H01L21/2007
摘要： A method of producing a composite structure comprises a step of producing a first layer of microcomponents on one face of a first substrate, the first substrate being held flush against a holding surface of a first support during production of the microcomponents, and a step of bonding the face of the first substrate comprising the layer of microcomponents onto a second substrate. During the bonding step, the first substrate is held flush against a second support, the holding surface of which has a flatness that is less than or equal to that of the first support used during production of the first layer of microcomponents.
摘要翻译：制造复合结构体的方法包括在第一基板的一个面上制造第一层微量部件的步骤，在制造微型部件期间，第一基板保持与第一支撑体的保持表面齐平，以及粘合步骤所述第一衬底的表面包括所述微组件层到第二衬底上。在接合步骤期间，第一基板保持与第二支撑件齐平，第二支撑件的保持表面的平面度小于或等于在第一层微量部件的制造期间使用的第一支撑件的平坦度。

10. 发明授权

US08357589B2 Method of thinning a structure 有权
标题翻译：稀释结构的方法
公开(公告)号：US08357589B2
公开(公告)日：2013-01-22
申请号：US13129545
申请日：2009-12-11
申请人： Marcel Broekaart
发明人： Marcel Broekaart
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , H01L27/14683 , Y10T156/1126
摘要： A method for thinning a structure of at least two assembled wafers, where one of the wafers includes channels on its surface facing the other wafer. In order to cause thinning of the structure, a fluid is introduced into the channels in a supercritical state and the fluid is passed from the supercritical state into the gaseous state. The channels do not open to the outside of the structure, such that the method further includes forming at least one access opening to the channels from the outer surface of the structure and before introducing the fluid in the supercritical state.
摘要翻译：一种用于减薄至少两个组装的晶片的结构的方法，其中一个晶片包括在其表面上面对另一个晶片的沟道。为了使结构变薄，将流体以超临界状态引入通道，并且流体从超临界状态进入气态。通道不向结构外部开放，使得该方法还包括从结构的外表面形成至少一个通道，并且将流体引入超临界状态。

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