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    • 9. 发明授权
    • Multifunctional contactless interconnect technology
    • 多功能非接触式互连技术
    • US5556507A
    • 1996-09-17
    • US206444
    • 1994-03-03
    • Nitin ParekhDominic Massetti
    • Nitin ParekhDominic Massetti
    • H01L21/768H01L21/00
    • H01L21/76895
    • The present invention is a method for providing multifunctional, contactless, interconnect technology that can simultaneously fabricate four features on a silicon wafer within the same metallization level including a diffusion barrier layer, a trim element (fuse), a higher resistivity local interconnect/strap, and a lower resistivity global interconnect. The fabrication only requires two lithographic operations and one metal deposition. A first metal (a refractory metal) film having constant thickness is sputter deposited on the silicon wafer. In the preferred embodiment, the refractory metal is titanitun-tungsten. A second metal fihn may be sputter deposited on the first metal film. The first metal fihn has a higher resistivity than the second metal film. In the preferred embodiment, the second metal is aluminum-copper. Four features may be defined using a first mask. The features are etched and the first mask is removed. Three of the four features may be further defined using a second, non-critical mask. The second metal film of the three features are wet etched and the second mask is removed to provide the four features. An intermetal oxide is deposited. The present invention maintains good barrier integrity, even as devices are scaled down into the submicron and sub-half micron regimes.
    • 本发明是一种用于提供多功能,非接触的互连技术的方法,其可以在同一金属化水平的同时制造硅晶片上的四个特征,包括扩散阻挡层,修剪元件(保险丝),更高电阻率的局部互连/ 和较低电阻率的全局互连。 该制造仅需要两次光刻操作和一次金属沉积。 在硅晶片上溅射沉积具有恒定厚度的第一金属(难熔金属)膜。 在优选实施例中,难熔金属是钛钛矿钨。 第二金属膜可以溅射沉积在第一金属膜上。 第一金属膜具有比第二金属膜更高的电阻率。 在优选实施例中,第二金属是铝 - 铜。 可以使用第一掩码来定义四个特征。 蚀刻特征并移除第一个掩模。 可以使用第二非关键掩模进一步限定四个特征中的三个。 三个特征的第二金属膜被湿蚀刻并且第二掩模被去除以提供四个特征。 沉积金属间氧化物。 本发明保持良好的屏障完整性,即使器件按比例缩小到亚微米和次半微米的方式。