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1. 发明授权

US08742666B2 Radio frequency (RF) power filters and plasma processing systems including RF power filters 有权
标题翻译：射频（RF）电源滤波器和等离子体处理系统，包括射频功率滤波器
公开(公告)号：US08742666B2
公开(公告)日：2014-06-03
申请号：US12960706
申请日：2010-12-06
申请人： Maolin Long , Ralph Lu , Fred Egley , Thomas Anderson , Seyed Jafar Jafarian-Tehrani , Michael Giarratano
发明人： Maolin Long , Ralph Lu , Fred Egley , Thomas Anderson , Seyed Jafar Jafarian-Tehrani , Michael Giarratano
IPC分类号： H05H1/46 , H03H1/00 , H03H7/01
CPC分类号： H05H1/46 , H01J37/32174 , H03H1/0007 , H03H7/01 , H03H7/38
摘要： A filter for filtering radio frequency (RF) power transmitted from an electrostatic chuck (ESC) in a plasma processing system. The plasma processing system may include a heating element disposed at the ESC. The plasma processing system may further include a power supply. The filter may include a core member and a cable wound around and wound along the core member to form a set of inductors. The cable may include a plurality of wires, including a first wire and a second wire, a portion of the first wire and a portion of the second wire being twisted together, a first end of the first wire and a first end of the second wire being connected to the heating element, each of a second end of the first wire and a second end of the second wire being connected to a capacitor and being connected to the power supply.
摘要翻译：一种用于过滤在等离子体处理系统中从静电卡盘（ESC）传送的射频（RF）功率的滤波器。等离子体处理系统可以包括设置在ESC处的加热元件。等离子体处理系统还可以包括电源。过滤器可以包括芯部件和缠绕在芯部件上并缠绕的电缆，以形成一组电感器。电缆可以包括多根线，包括第一线和第二线，第一线的一部分和第二线的一部分被扭绞在一起，第一线的第一端和第二线的第一端连接到加热元件，第一线的第二端和第二线的第二端中的每一个连接到电容器并连接到电源。

2. 发明授权

US09305750B2 Adjusting current ratios in inductively coupled plasma processing systems 有权
标题翻译：在电感耦合等离子体处理系统中调整电流比
公开(公告)号：US09305750B2
公开(公告)日：2016-04-05
申请号：US12728112
申请日：2010-03-19
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3211 , H01J37/32137 , H01J37/32183 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。并联电路可以包括彼此并联电连接的电感器和可变电容器。

3. 发明申请

US20110115379A1 CURRENT CONTROL IN PLASMA PROCESSING SYSTEMS 有权
标题翻译：等离子体处理系统中的电流控制
公开(公告)号：US20110115379A1
公开(公告)日：2011-05-19
申请号：US12908468
申请日：2010-10-20
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
IPC分类号： H05H1/24
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32935
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统包括用于传导用于维持等离子体的至少一部分的电流的线圈。等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量有关的信息，并且用于提供用于控制提供电流和/或总电流的大小。

4. 发明授权

US08736175B2 Current control in plasma processing systems 有权
标题翻译：等离子体处理系统中的电流控制
公开(公告)号：US08736175B2
公开(公告)日：2014-05-27
申请号：US12908468
申请日：2010-10-20
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
IPC分类号： H05B31/26
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32935
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统包括用于传导用于维持等离子体的至少一部分的电流的线圈。等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量相关的信息，并且用于提供用于控制提供电流和/或总电流的大小。

5. 发明申请

US20100314048A1 ADJUSTING CURRENT RATIOS IN INDUCTIVELY COUPLED PLASMA PROCESSING SYSTEMS 有权
标题翻译：在电感耦合等离子体处理系统中调整电流比
公开(公告)号：US20100314048A1
公开(公告)日：2010-12-16
申请号：US12728112
申请日：2010-03-19
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani
IPC分类号： H05H1/34 , H01L21/3065 , G05F1/00
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3211 , H01J37/32137 , H01J37/32183 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。并联电路可以包括彼此并联电连接的电感器和可变电容器。

6. 发明申请

US20130135058A1 TCCT MATCH CIRCUIT FOR PLASMA ETCH CHAMBERS 有权
公开(公告)号：US20130135058A1
公开(公告)日：2013-05-30
申请号：US13751001
申请日：2013-01-25
申请人： Maolin Long , Ricky Marsh , Alex Paterson
发明人： Maolin Long , Ricky Marsh , Alex Paterson
IPC分类号： H03H7/38
CPC分类号： H03H7/38 , H03H7/40
摘要： A match circuit includes the following: a power input circuit coupled to an RF source; an inner coil input circuit coupled between the power input circuit and an input terminal of an inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit; an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection to ground; an outer coil input circuit coupled between the first node and an input terminal of an outer coil; and an outer coil output circuit coupled between an output terminal of the outer coil and ground.

7. 发明授权

US07776156B2 Side RF coil and side heater for plasma processing apparatus 有权
标题翻译：用于等离子体处理装置的侧面RF线圈和侧面加热器
公开(公告)号：US07776156B2
公开(公告)日：2010-08-17
申请号：US11055191
申请日：2005-02-10
申请人： Maolin Long , David P. Sun
发明人： Maolin Long , David P. Sun
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： C23C16/507 , C23C16/46 , H01J37/321 , H01J37/32174 , H01L21/67069 , H01L21/67109
摘要： A RF plasma generation and temperature control system for an inductively coupled plasma process chamber. The plasma generation system includes a heater that includes an elongated upper heating element substantially parallel to an elongated lower heating element, where the upper and lower heating elements are joined by one or more posts substantially perpendicular to the upper and lower heating elements. The system also including one or more RF coils featuring a crease at points of overlap with the posts. Also, a RF plasma generation system for an inductively coupled plasma process chamber, where the plasma generation system includes a heater thermally coupled to the chamber, and one or more RF coils coupled to the chamber, where the RF coils include a hollow tube having at least one flat side.
摘要翻译：用于感应耦合等离子体处理室的RF等离子体产生和温度控制系统。等离子体产生系统包括加热器，其包括基本上平行于细长的下部加热元件的细长的上部加热元件，其中上部加热元件和下部加热元件由基本上垂直于上部和下部加热元件的一个或多个支柱连接。该系统还包括一个或多个RF线圈，其具有在与柱重叠的点处的折痕。此外，用于感应耦合等离子体处理室的RF等离子体产生系统，其中等离子体发生系统包括热耦合到腔室的加热器和耦合到腔室的一个或多个RF线圈，其中RF线圈包括中空管，最少一个平面。

8. 发明授权

US07531061B2 Gas temperature control for a plasma process 失效
标题翻译：等离子体工艺的气体温度控制
公开(公告)号：US07531061B2
公开(公告)日：2009-05-12
申请号：US10940019
申请日：2004-09-14
申请人： Maolin Long
发明人： Maolin Long
IPC分类号： H01L21/00 , C23C16/00 , C23F1/00 , F25B29/00
CPC分类号： H01J37/3244 , C23C16/452
摘要： A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an individual gas species or mixed gas species). According to one embodiment, an in-line heat exchanger alters (i.e., increases or decreases) the temperature of passing gas species (either high- or low-density) prior to entering a process chamber, temperature change of the gases is measured by determining a temperature of the gas both upon entrance into the in-line heat exchanger assembly and upon exit.
摘要翻译：一种用于在所述至少一种气体进入处理室之前控制等离子体处理环境中的至少一种气体的温度的方法和系统。该温度控制可以在喷头组件（单独的气体种类或混合气体种类）的不同空间区域中变化。根据一个实施例，直列式热交换器在进入处理室之前改变（即，增加或减少）通过的气体种类（高或低密度）的温度，气体的温度变化通过确定气体在进入直列热交换器组件时和出口时的温度。

9. 发明授权

US09966236B2 Powered grid for plasma chamber 有权
公开(公告)号：US09966236B2
公开(公告)日：2018-05-08
申请号：US13161372
申请日：2011-06-15
申请人： Maolin Long , Alex Paterson , Richard Marsh , Ying Wu
发明人： Maolin Long , Alex Paterson , Richard Marsh , Ying Wu
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32651 , H01J37/321 , H01J37/32697 , H01L21/6831
摘要： A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

10. 发明申请

US20130186568A1 Faraday Shield Having Plasma Density Decoupling Structure Between TCP Coil Zones 有权
标题翻译：法拉第屏蔽层在TCP线圈区域之间具有等离子体密度去耦结构
公开(公告)号：US20130186568A1
公开(公告)日：2013-07-25
申请号：US13658652
申请日：2012-10-23
申请人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
发明人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
IPC分类号： H01L21/67 , H05K9/00
CPC分类号： H01L21/67069 , H01J37/32651 , H05K9/00
摘要： A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.
摘要翻译：提供了法拉第屏蔽和包含法拉第屏蔽的等离子体处理室。等离子体室包括用于接收基板的静电卡盘，连接到腔室的顶部的介电窗口，设置在静电卡盘上的电介质窗口和法拉第屏蔽件。法拉第屏蔽设置在室内并限定在静电卡盘和电介质窗口之间。法拉第屏蔽包括具有包括第一和第二多个狭槽的内半径范围的内区和具有包括第三多个槽的外半径范围的外区。内部区域与外部区域相邻。法拉第屏蔽还包括分隔内区和外区的带环，使得第一和第二多个槽不与第三多个槽连接。

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