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1. 发明申请

US20130135058A1 TCCT MATCH CIRCUIT FOR PLASMA ETCH CHAMBERS 有权
公开(公告)号：US20130135058A1
公开(公告)日：2013-05-30
申请号：US13751001
申请日：2013-01-25
申请人： Maolin Long , Ricky Marsh , Alex Paterson
发明人： Maolin Long , Ricky Marsh , Alex Paterson
IPC分类号： H03H7/38
CPC分类号： H03H7/38 , H03H7/40
摘要： A match circuit includes the following: a power input circuit coupled to an RF source; an inner coil input circuit coupled between the power input circuit and an input terminal of an inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit; an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection to ground; an outer coil input circuit coupled between the first node and an input terminal of an outer coil; and an outer coil output circuit coupled between an output terminal of the outer coil and ground.

2. 发明申请

US20130186568A1 Faraday Shield Having Plasma Density Decoupling Structure Between TCP Coil Zones 有权
标题翻译：法拉第屏蔽层在TCP线圈区域之间具有等离子体密度去耦结构
公开(公告)号：US20130186568A1
公开(公告)日：2013-07-25
申请号：US13658652
申请日：2012-10-23
申请人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
发明人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
IPC分类号： H01L21/67 , H05K9/00
CPC分类号： H01L21/67069 , H01J37/32651 , H05K9/00
摘要： A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.
摘要翻译：提供了法拉第屏蔽和包含法拉第屏蔽的等离子体处理室。等离子体室包括用于接收基板的静电卡盘，连接到腔室的顶部的介电窗口，设置在静电卡盘上的电介质窗口和法拉第屏蔽件。法拉第屏蔽设置在室内并限定在静电卡盘和电介质窗口之间。法拉第屏蔽包括具有包括第一和第二多个狭槽的内半径范围的内区和具有包括第三多个槽的外半径范围的外区。内部区域与外部区域相邻。法拉第屏蔽还包括分隔内区和外区的带环，使得第一和第二多个槽不与第三多个槽连接。

3. 发明授权

US09293353B2 Faraday shield having plasma density decoupling structure between TCP coil zones 有权
标题翻译：法拉第屏蔽层具有TCP线圈区域之间的等离子体密度去耦结构
公开(公告)号：US09293353B2
公开(公告)日：2016-03-22
申请号：US13658652
申请日：2012-10-23
申请人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
发明人： Maolin Long , Alex Paterson , Ricky Marsh , Ying Wu , John Drewery
IPC分类号： C23C16/00 , H01L21/306 , H01L21/67 , H05K9/00 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32651 , H05K9/00
摘要： A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.
摘要翻译：提供了法拉第屏蔽和包含法拉第屏蔽的等离子体处理室。等离子体室包括用于接收基板的静电卡盘，连接到腔室的顶部的介电窗口，设置在静电卡盘上的电介质窗口和法拉第屏蔽件。法拉第屏蔽设置在室内并限定在静电卡盘和电介质窗口之间。法拉第屏蔽包括具有包括第一和第二多个狭槽的内半径范围的内区和具有包括第三多个槽的外半径范围的外区。内部区域与外部区域相邻。法拉第屏蔽还包括分隔内区和外区的带环，使得第一和第二多个槽不与第三多个槽连接。

4. 发明授权

US09966236B2 Powered grid for plasma chamber 有权
公开(公告)号：US09966236B2
公开(公告)日：2018-05-08
申请号：US13161372
申请日：2011-06-15
申请人： Maolin Long , Alex Paterson , Richard Marsh , Ying Wu
发明人： Maolin Long , Alex Paterson , Richard Marsh , Ying Wu
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32651 , H01J37/321 , H01J37/32697 , H01L21/6831
摘要： A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

5. 发明授权

US09490106B2 Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil 有权
标题翻译：内部法拉第屏蔽具有相对于外部内部和外部TCP线圈分布的人字形图案和相关定位
公开(公告)号：US09490106B2
公开(公告)日：2016-11-08
申请号：US13198683
申请日：2011-08-04
申请人： John Drewery , Maolin Long , Alex Paterson
发明人： John Drewery , Maolin Long , Alex Paterson
IPC分类号： H01J37/32
CPC分类号： H01J37/32651 , H01J37/321 , H01J37/32633
摘要： Plasma processing chambers having internal Faraday shields with defined groove configurations, are defined. In one example, the chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber, where the dielectric window disposed over the electrostatic chuck. Also included is a Faraday shield disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range, a middle zone having a middle radius range, an outer zone having an outer radius range, where the inner zone is adjacent to the middle zone, and the middle zone being adjacent to the outer zone. Further defining the Faraday shield is a first set of radial slots (A) extending through the inner zone, the middle zone, and the outer zone, a second set of radial slots (C) extending through only the outer zone; and a third set of radial slots (B) extending through the middle zone and outer zone. In this configuration, the first, second and third radial slots are arranged radially around the Faraday shield in a repeating pattern of slots A, C, B, and C.
摘要翻译：定义了具有限定凹槽结构的具有内部法拉第屏蔽的等离子体处理室。在一个示例中，腔室包括用于接收衬底的静电吸盘和连接到室的顶部的介电窗口，其中介电窗设置在静电吸盘上方。还包括设置在室内部并限定在静电卡盘和电介质窗口之间的法拉第屏蔽。法拉第屏蔽包括具有内半径范围的内区域，具有中间半径范围的中间区域，具有外半径范围的外区域，其中内区域与中间区域相邻，中间区域邻近外部区域进一步限定法拉第屏蔽是延伸穿过内部区域，中间区域和外部区域的第一组径向狭槽（A），仅延伸穿过外部区域的第二组径向狭槽（C）; 以及延伸穿过中间区域和外部区域的第三组径向狭槽（B）。在这种构造中，第一，第二和第三径向狭缝围绕法拉第屏蔽件以狭槽A，C，B和C的重复图案径向布置。

6. 发明申请

US20120322270A1 POWERED GRID FOR PLASMA CHAMBER 有权
标题翻译：等离子室用电网
公开(公告)号：US20120322270A1
公开(公告)日：2012-12-20
申请号：US13161372
申请日：2011-06-15
申请人： Maolin Long , Alex Paterson , Richard Marsh , Ying Wu
发明人： Maolin Long , Alex Paterson , Richard Marsh , Ying Wu
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32651 , H01J37/321 , H01J37/32697 , H01L21/6831
摘要： A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.
摘要翻译：提供等离子体处理室和操作室的方法。示例性室包括用于接收基板的静电卡盘和连接到腔室顶部的电介质窗口。电介质窗口的内侧面对位于静电卡盘上方的等离子体处理区域，并且电介质窗口的外侧在等离子体处理区域的外部。内部和外部线圈设置在电介质窗口的外侧上方，内部和外部线圈连接到第一RF电源。电力网格设置在电介质窗口的外侧和内部和外部线圈之间。电网连接到独立于第一RF电源的第二RF电源。

7. 发明授权

US09336996B2 Plasma processing systems including side coils and methods related to the plasma processing systems 有权
标题翻译：等离子体处理系统包括侧线圈和与等离子体处理系统有关的方法
公开(公告)号：US09336996B2
公开(公告)日：2016-05-10
申请号：US13034332
申请日：2011-02-24
申请人： Maolin Long , Alex Paterson
发明人： Maolin Long , Alex Paterson
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , H05H1/46
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32165 , H01J37/32431 , H01J37/3244 , H01J37/32458 , H01J37/32513 , H01J37/32651 , H01J37/32715 , H01J2237/332 , H01J2237/334 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.
摘要翻译：一种用于产生等离子体以处理晶片的等离子体处理系统。等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。室结构包括室壁和电介质构件。电介质构件包括顶部，垂直壁和凸缘。顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。顶部线圈组设置在顶部上方。侧面线圈组围绕垂直壁。垂直壁的垂直内表面被配置为暴露于等离子体。垂直壁的内径小于室壁的内径。

8. 发明申请

US20120273130A1 Internal Faraday Shield Having Distributed Chevron Patterns and Correlated Positioning Relative to External Inner and Outer TCP Coil 有权
标题翻译：内部法拉第屏蔽具有相对于外部内部和外部TCP线圈分布的雪佛龙模式和相关定位
公开(公告)号：US20120273130A1
公开(公告)日：2012-11-01
申请号：US13198683
申请日：2011-08-04
申请人： John Drewery , Maolin Long , Alex Paterson
发明人： John Drewery , Maolin Long , Alex Paterson
IPC分类号： H01L21/3065 , H05K9/00
CPC分类号： H01J37/32651 , H01J37/321 , H01J37/32633
摘要： Plasma processing chambers having internal Faraday shields with defined groove configurations, are defined. In one example, the chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber, where the dielectric window disposed over the electrostatic chuck. Also included is a Faraday shield disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range, a middle zone having a middle radius range, an outer zone having an outer radius range, where the inner zone is adjacent to the middle zone, and the middle zone being adjacent to the outer zone. Further defining the Faraday shield is a first set of radial slots (A) extending through the inner zone, the middle zone, and the outer zone, a second set of radial slots (C) extending through only the outer zone; and a third set of radial slots (B) extending through the middle zone and outer zone. In this configuration, the first, second and third radial slots are arranged radially around the Faraday shield in a repeating pattern of slots A, C, B, and C.
摘要翻译：定义了具有限定凹槽结构的具有内部法拉第屏蔽的等离子体处理室。在一个示例中，腔室包括用于接收衬底的静电吸盘和连接到室的顶部的介电窗口，其中介电窗设置在静电吸盘上方。还包括设置在室内部并限定在静电卡盘和电介质窗口之间的法拉第屏蔽。法拉第屏蔽包括具有内半径范围的内区域，具有中间半径范围的中间区域，具有外半径范围的外区域，其中内区域与中间区域相邻，中间区域邻近外部区域进一步限定法拉第屏蔽是延伸穿过内部区域，中间区域和外部区域的第一组径向狭槽（A），仅延伸穿过外部区域的第二组径向狭槽（C）; 以及延伸穿过中间区域和外部区域的第三组径向狭槽（B）。在这种构造中，第一，第二和第三径向狭缝围绕法拉第屏蔽件以狭槽A，C，B和C的重复图案径向布置。

9. 发明申请

US20120217222A1 PLASMA PROCESSING SYSTEMS INCLUDING SIDE COILS AND METHODS RELATED TO THE PLASMA PROCESSING SYSTEMS 有权
标题翻译：包括侧线的等离子体处理系统和与等离子体处理系统相关的方法
公开(公告)号：US20120217222A1
公开(公告)日：2012-08-30
申请号：US13034332
申请日：2011-02-24
申请人： Maolin Long , Alex Paterson
发明人： Maolin Long , Alex Paterson
IPC分类号： C23F1/08 , C23F1/00 , C23C16/52 , C23C16/458 , C23C16/50
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32165 , H01J37/32431 , H01J37/3244 , H01J37/32458 , H01J37/32513 , H01J37/32651 , H01J37/32715 , H01J2237/332 , H01J2237/334 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.
摘要翻译：一种用于产生等离子体以处理晶片的等离子体处理系统。等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。室结构包括室壁和电介质构件。电介质构件包括顶部，垂直壁和凸缘。顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。顶部线圈组设置在顶部上方。侧面线圈组围绕垂直壁。垂直壁的垂直内表面被配置为暴露于等离子体。垂直壁的内径小于室壁的内径。

10. 发明授权

US09305750B2 Adjusting current ratios in inductively coupled plasma processing systems 有权
标题翻译：在电感耦合等离子体处理系统中调整电流比
公开(公告)号：US09305750B2
公开(公告)日：2016-04-05
申请号：US12728112
申请日：2010-03-19
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3211 , H01J37/32137 , H01J37/32183 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。并联电路可以包括彼此并联电连接的电感器和可变电容器。

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