专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08736175B2 Current control in plasma processing systems 有权
标题翻译：等离子体处理系统中的电流控制
公开(公告)号：US08736175B2
公开(公告)日：2014-05-27
申请号：US12908468
申请日：2010-10-20
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
IPC分类号： H05B31/26
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32935
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统包括用于传导用于维持等离子体的至少一部分的电流的线圈。等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量相关的信息，并且用于提供用于控制提供电流和/或总电流的大小。

2. 发明申请

US20110115379A1 CURRENT CONTROL IN PLASMA PROCESSING SYSTEMS 有权
标题翻译：等离子体处理系统中的电流控制
公开(公告)号：US20110115379A1
公开(公告)日：2011-05-19
申请号：US12908468
申请日：2010-10-20
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
IPC分类号： H05H1/24
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32935
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统包括用于传导用于维持等离子体的至少一部分的电流的线圈。等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量有关的信息，并且用于提供用于控制提供电流和/或总电流的大小。

3. 发明授权

US08449174B2 Method and apparatus for chuck thermal calibration 有权
标题翻译：卡盘热校准的方法和装置
公开(公告)号：US08449174B2
公开(公告)日：2013-05-28
申请号：US12858408
申请日：2010-08-17
申请人： Keith William Gaff , Neil Martin Paul Benjamin
发明人： Keith William Gaff , Neil Martin Paul Benjamin
IPC分类号： G01K7/00 , G01K17/00
CPC分类号： H01L21/6833 , H01L21/67248
摘要： Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process.
摘要翻译：在去除晶片暴露的热源之后，测量晶片温度作为时间的函数。在晶片温度测量期间，在晶片和支撑晶片的卡盘之间的界面处以基本恒定的压力供应气体。根据测量的晶片温度作为时间的函数确定与所施加的气体压力相对应的卡盘热表征参数值。对于多个施加的气体压力测量晶片温度，以产生作为气体压力的函数的一组卡盘热表征参数值。卡盘的热校准曲线是从测量卡盘热特性参数值和相应气体压力的集合中产生的。卡盘的热校准曲线可用于调节气体压力，以在制造过程中获得特定的晶片温度。

4. 发明申请

US20130009545A1 SYNCHRONIZED AND SHORTENED MASTER-SLAVE RF PULSING IN A PLASMA PROCESSING CHAMBER 有权
标题翻译：等离子体处理室中的同步和短路主从射频脉冲
公开(公告)号：US20130009545A1
公开(公告)日：2013-01-10
申请号：US13177486
申请日：2011-07-06
申请人： Neil Martin Paul Benjamin , Arthur H. Sato
发明人： Neil Martin Paul Benjamin , Arthur H. Sato
IPC分类号： H05H1/24
CPC分类号： H01J37/32082 , H01J37/32137 , H01J37/32146 , H01J37/32935
摘要： Plasma processing apparatuses and techniques for processing substrates, which include the use of synchronized RF pulsing of a first RF signal and a delayed-and-shortened second RF signal. The first RF signal may be the primary plasma-generating RF signal and the second RF signal may be the RF bias signal or vice versa. Alternatively or additionally, the first RF signal may be the high frequency RF signal and the second RF signal may be the lower frequency RF signal. Either the first RF signal or the second RF signal may act as the master, with the other acting as the slave signal. Alternatively, an external circuit may be employed as a master to control both the first RF signal and the second RF signal as slave signals. Track-and-hold techniques and circuits are provided to ensure accurate measurement for process control and other purposes.
摘要翻译：用于处理衬底的等离子体处理装置和技术，其包括使用第一RF信号的同步RF脉冲和延迟和缩短的第二RF信号。第一RF信号可以是主等离子体产生RF信号，第二RF信号可以是RF偏置信号，反之亦然。或者或另外，第一RF信号可以是高频RF信号，第二RF信号可以是较低频率的RF信号。第一RF信号或第二RF信号可以用作主机，另一个作为从机信号。或者，可以使用外部电路作为主器件来控制第一RF信号和第二RF信号作为从属信号。提供跟踪和保持技术和电路，以确保过程控制和其他目的的准确测量。

5. 发明授权

US07578616B2 Apparatus for determining a temperature of a substrate and methods therefor 有权
标题翻译：用于确定衬底的温度的装置及其方法
公开(公告)号：US07578616B2
公开(公告)日：2009-08-25
申请号：US11233561
申请日：2005-09-22
申请人： Keith Gaff , Neil Martin Paul Benjamin
发明人： Keith Gaff , Neil Martin Paul Benjamin
IPC分类号： G01K11/00 , G01K1/14 , G01K13/00
CPC分类号： G01K11/20 , G01K11/3213
摘要： An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in thermal contact to the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to a electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when exposed to a plasma. The apparatus also includes a barrier window positioned between the phosphor material and a plasma, wherein the barrier window allows at least a portion of the first wavelength and the second wavelength to be transmitted, and wherein the barrier window produces a second set of non volatile byproducts that is less than the first set of non volatile byproducts when exposed to the plasma, wherein when the electromagnetic radiation is transmitted to the phosphor material through the barrier window, the temperature is determined from the decay rate of the fluorescent response.
摘要翻译：公开了一种用于测量衬底温度的装置。该装置包括与衬底热接触的磷光体材料，当暴露于第二波长范围内的电磁辐射时，荧光体材料在第一波长范围内产生荧光响应，荧光响应以衰减速率衰减，其衰减速率与荧光体材料的温度，以及当暴露于等离子体时产生第一组非挥发性副产物的荧光体材料。该设备还包括位于荧光体材料和等离子体之间的屏障窗口，其中屏障窗口允许第一波长和第二波长的至少一部分被传输，并且其中屏障窗口产生第二组非挥发性副产物当暴露于等离子体时，其小于第一组非挥发性副产物，其中当电磁辐射通过屏障窗口传输到荧光体材料时，根据荧光响应的衰减速率来确定温度。

6. 发明申请

US20100309604A1 Method and Apparatus for Chuck Thermal Calibration 有权
标题翻译：卡盘热校准方法与装置
公开(公告)号：US20100309604A1
公开(公告)日：2010-12-09
申请号：US12858408
申请日：2010-08-17
申请人： Keith William Gaff , Neil Martin Paul Benjamin
发明人： Keith William Gaff , Neil Martin Paul Benjamin
IPC分类号： H01L21/683 , G01K13/00 , G01K15/00 , G06F17/10
CPC分类号： H01L21/6833 , H01L21/67248
摘要： Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process.
摘要翻译：在去除晶片暴露的热源之后，测量晶片温度作为时间的函数。在晶片温度测量期间，在晶片和支撑晶片的卡盘之间的界面处以基本恒定的压力供应气体。根据测量的晶片温度作为时间的函数确定与所施加的气体压力相对应的卡盘热表征参数值。对于多个施加的气体压力测量晶片温度，以产生作为气体压力的函数的一组卡盘热表征参数值。卡盘的热校准曲线是从测量卡盘热特性参数值和相应气体压力的集合中产生的。卡盘的热校准曲线可用于调节气体压力，以在制造过程中获得特定的晶片温度。

7. 发明授权

US09174296B2 Plasma ignition and sustaining methods and apparatuses 有权
标题翻译：等离子体点火和维持方法和装置
公开(公告)号：US09174296B2
公开(公告)日：2015-11-03
申请号：US12908459
申请日：2010-10-20
申请人： Neil Martin Paul Benjamin , Andreas Fischer
发明人： Neil Martin Paul Benjamin , Andreas Fischer
IPC分类号： B23K9/00 , B23K10/00 , B23K9/013
CPC分类号： H01J37/32541 , B23K9/013 , B23K10/00 , B23K2101/40 , H01J37/3211
摘要： An apparatus for generating plasma including a plasma generating vessel and a coil having a coil length and a first set of partially enclosing, longitudinally oriented conductive (PELOC) fingers and a second set of PELOC fingers. The PELOC finger sets are oriented along a longitudinal axis of the vessel with each partially enclosing a periphery of the vessel. The two sets of PELOC fingers are oriented fingertips facing fingertips and separated by an inter-set distance that is less than the coil length.
摘要翻译：一种用于产生等离子体的装置，包括等离子体发生容器和具有线圈长度的线圈和第一组部分封闭的纵向导电（PELOC）指状物和第二组PELOC指状物。 PELOC手指组沿着容器的纵向轴线定向，每个部分包围容器的周边。两组PELOC手指是面向指尖的定向指尖，并且以小于线圈长度的间隔距离分开。

8. 发明授权

US07497614B2 Apparatus for determining a temperature of a substrate and methods therefor 有权
标题翻译：用于确定衬底的温度的装置及其方法
公开(公告)号：US07497614B2
公开(公告)日：2009-03-03
申请号：US11829833
申请日：2007-07-27
申请人： Keith Gaff , Neil Martin Paul Benjamin
发明人： Keith Gaff , Neil Martin Paul Benjamin
IPC分类号： G01K11/00 , G01K13/00
CPC分类号： G01K11/20 , G01K11/3213
摘要： An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in direct contact with the substrate and in thermal contact with the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to a electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when expose to a plasma.
摘要翻译：公开了一种用于测量衬底温度的装置。该设备包括与衬底直接接触并与衬底热接触的磷光体材料，当暴露于第二波长范围内的电磁辐射时，磷光体材料在第一波长范围内产生荧光响应，荧光反应在与荧光体材料的温度有关的衰减速率，以及在暴露于等离子体时产生第一组非挥发性副产物的荧光体材料。

9. 发明授权

US5793192A Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system 失效
标题翻译：用于在晶片处理系统中夹持和放大半导体晶片的方法和装置
公开(公告)号：US5793192A
公开(公告)日：1998-08-11
申请号：US671752
申请日：1996-06-28
申请人： Marc B. Kubly , Neil Martin Paul Benjamin , Steven Douglas Germain
发明人： Marc B. Kubly , Neil Martin Paul Benjamin , Steven Douglas Germain
IPC分类号： B25J15/06 , H01L21/68 , H01L21/683 , H02N13/00 , G05F3/04 , B23B5/22 , H01G23/00
CPC分类号： H02N13/00 , H01L21/6833 , Y10T279/23
摘要： A method for clamping a wafer to an electrostatic chuck having a substantially resistive dielectric layer disposed thereon. The method includes the step of providing a build-up voltage having a first polarity to a pole of the electrostatic chuck to cause a potential difference to build up between a first region of the substantially resistive dielectric layer and a second region of the wafer that overlies at least a portion of the first region. This potential difference gives rise to a clamping force to clamp the wafer to the electrostatic chuck. The method further includes the step of terminating the build-up voltage when the clamping force substantially reaches a predefined level. There is further included the step of providing a holding voltage to the pole of the electrostatic chuck to substantially maintain the clamping force at the predefined level. This holding voltage has the first polarity and a magnitude that is lower than a magnitude of the build-up voltage. There is further included the step of providing a declamping voltage to the pole of the electrostatic chuck to substantially remove the clamping force, the declamping voltage having a polarity that is opposite to the first polarity.
摘要翻译：一种用于将晶片夹持到其上布置有基本上电阻的介电层的静电卡盘的方法。该方法包括以下步骤：向静电卡盘的极点提供具有第一极性的积聚电压，以在基本上电阻的电介质层的第一区域和晶片的第二区域之间形成电位差，第一区域的至少一部分。该电位差产生夹紧力以将晶片夹紧到静电卡盘。该方法还包括当夹紧力基本达到预定水平时终止积聚电压的步骤。还包括向静电卡盘的极提供保持电压以将夹持力基本保持在预定水平的步骤。该保持电压具有第一极性和低于积聚电压的幅度的幅度。另外还包括向静电卡盘的磁极提供降低电压以基本上消除夹紧力的步骤，该电压具有与第一极性相反的极性。

10. 发明授权

US08884178B2 Methods and apparatus for igniting and sustaining plasma 有权
标题翻译：用于点燃和维持血浆的方法和装置
公开(公告)号：US08884178B2
公开(公告)日：2014-11-11
申请号：US12908462
申请日：2010-10-20
申请人： Andreas Fischer , Neil Martin Paul Benjamin
发明人： Andreas Fischer , Neil Martin Paul Benjamin
IPC分类号： B23K10/00 , H05H1/46 , H01J37/32 , B23K9/013
CPC分类号： B23K10/00 , B23K9/013 , B23K2101/40 , H01J37/321 , H01J37/3211 , H01J37/32366 , H01J37/32825 , H05H1/46 , H05H2001/4667
摘要： Atmospheric inductively coupled plasma torch comprising a vessel within which the plasma is generated and a coil wound around the periphery of the vessel. The coil has at least two spaced-apart winding layers. The coil is constructed such that all winding layers of a given multi-turn is wound before an adjacent multi-turn is wound. A first end of the coil is coupled to ground, and a second end of the coil is coupled to receive a RF driver signal that is configured to ignite the plasma to facilitate processing.
摘要翻译：大气感应耦合等离子体焰炬，其包括在其内产生等离子体的容器和缠绕在容器外围的线圈。线圈具有至少两个间隔开的绕组层。线圈被构造成使得在相邻的多匝卷绕之前，给定多匝的所有绕组层被卷绕。线圈的第一端耦合到地，并且线圈的第二端被耦合以接收被配置为点燃等离子体以促进处理的RF驱动器信号。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式