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1. 发明授权

US5664316A Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer 失效
标题翻译：制造具有连续纵向偏置层的磁阻读取传感器的方法
公开(公告)号：US5664316A
公开(公告)日：1997-09-09
申请号：US438430
申请日：1995-05-10
申请人： Mao-Min Chen , Robert Edward Fontana , Mohamad Towfik Krounbi , Kenneth Ting-Yuan Kung , James Hsi-Tang Lee , Jyh-Shiliey Jerry Lo , Ching Hwa Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Robert Edward Fontana , Mohamad Towfik Krounbi , Kenneth Ting-Yuan Kung , James Hsi-Tang Lee , Jyh-Shiliey Jerry Lo , Ching Hwa Tsang , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G11B5/3932 , G11B5/399 , G11B5/3163 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A magnetoresistive (MR) read transducer having passive end regions separated by a central active region in which an MR layer is formed over substantially only the central active region and in which a magnetic bias layers is formed in each passive end region. Each of the magnetic bias layers includes a layer of ferromagnetic material and a layer of antiferromagnetic material overlaying and in contact with the ferromagnetic layer to provide an exchange-coupled magnetic bias field. Each of the magnetic bias layers form an abutting junction having magnetic and electrically continuity with the MR layer to produce a longitudinal magnetic bias field in the transducer.
摘要翻译：磁阻（MR）读取传感器，其具有被中心有源区隔开的被动端区，其中MR层基本上仅形成在中心有源区上，并且在每个被动端区中形成磁偏置层。每个磁偏置层包括铁磁材料层和叠层并与铁磁层接触的反铁磁材料层，以提供交换耦合磁偏置场。每个磁偏置层形成与MR层具有磁性和电连续性的邻接结，以在换能器中产生纵向磁偏置场。

2. 发明授权

US5668523A Magnetoresistive sensor employing an exchange-bias enhancing layer 失效
标题翻译：使用交换偏置增强层的磁阻传感器
公开(公告)号：US5668523A
公开(公告)日：1997-09-16
申请号：US449605
申请日：1995-05-23
申请人： Mao-Min Chen , Kenneth Ting-Yuan Kung , Ching Hwa Tsang
发明人： Mao-Min Chen , Kenneth Ting-Yuan Kung , Ching Hwa Tsang
IPC分类号： G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , G11B5/3903 , G11B5/399 , H01F10/3218
摘要： An exchange-biased magnetoresistive (MR) read transducer in which the MR layer composition is changed at the interface with an antiferromagnetic layer, which is in direct contact with the ferromagnetic MR layer. The exchange-bias field strength H.sub.UA in the MR layer is increased at room temperature by adding a specially-optimized transition region in the ferromagnetic MR layer at the interface. The percentage of iron in the ferromagnetic alloy varies from a higher value at the interface to a lower value at the opposite end of the transition region. The higher iron ratio at the antiferromagnetic interface enhances the exchange-bias field H.sub.UA and the lower iron ratio throughout the bulk of the ferromagnetic MR layer maintains the lower coercivity preferred in the layer, thereby enhancing the longitudinal bias field with respect to the MR coercivity. Advantageously, the enhanced longitudinal bias effect of the special ferromagnetic transition region does not reduce the critical temperature T.sub.cr at which the temperature-dependent exchange-bias field H.sub.UA (T) approaches zero.
摘要翻译：交换偏置磁阻（MR）读取传感器，其中MR层组成在与铁磁MR层直接接触的反铁磁层的界面处改变。 MR层中的交换偏置场强HUA在室温下通过在界面处的铁磁性MR层中加入特别优化的过渡区而增加。铁磁合金中铁的百分比从界面处的较高值到过渡区域相对端的较低值变化。反铁磁性界面处铁含量越高，交换偏置场HUA越大，铁磁MR层整体的铁含量越低，维持层中优选的矫顽力越低，从而增强纵向偏磁场相对于MR矫顽力。有利的是，特殊铁磁过渡区的增强的纵向偏置效应不会降低温度相关的交换偏置场HUA（T）接近零的临界温度Tcr。

3. 发明授权

US5668687A Magnetoresistive sensor employing an exchange-bias enhancing layer with a variable-composition transition region 失效
标题翻译：采用具有可变成分过渡区域的交换偏置增强层的磁阻传感器
公开(公告)号：US5668687A
公开(公告)日：1997-09-16
申请号：US593654
申请日：1996-01-29
申请人： Mao-Min Chen , Kenneth Ting-Yuan Kung , Ching Hwa Tsang
发明人： Mao-Min Chen , Kenneth Ting-Yuan Kung , Ching Hwa Tsang
IPC分类号： G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , G11B5/3903 , G11B5/399 , H01F10/3218
摘要： An exchange-biased magnetoresistive (MR) read transducer in which the MR layer composition is changed at the interface with an antiferromagnetic layer, which is in direct contact with the ferromagnetic MR layer. The exchange-bias field strength H.sub.UA in the MR layer is increased at room temperature by adding a specially-optimized transition region in the ferromagnetic MR layer at the interface. The percentage of iron in the ferromagnetic alloy varies from a higher value at the interface to a lower value at the opposite end of the transition region. The higher iron ratio at the antiferromagnetic interface enhances the exchange-bias field H.sub.UA and the lower iron ratio throughout the bulk of the ferromagnetic MR layer maintains the lower coercivity preferred in the layer, thereby enhancing the longitudinal bias field with respect to the MR coercivity. Advantageously, the enhanced longitudinal bias effect of the special ferromagnetic transition region does not reduce the critical temperature T.sub.cr at which the temperature-dependent exchange-bias field H.sub.UA (T) approaches zero.
摘要翻译：交换偏置磁阻（MR）读取传感器，其中MR层组成在与铁磁MR层直接接触的反铁磁层的界面处改变。 MR层中的交换偏置场强HUA在室温下通过在界面处的铁磁性MR层中加入特别优化的过渡区而增加。铁磁合金中铁的百分比从界面处的较高值到过渡区域相对端的较低值变化。反铁磁性界面处铁含量越高，交换偏置场HUA越大，铁磁MR层整体的铁含量越低，维持层中优选的矫顽力越低，从而增强纵向偏磁场相对于MR矫顽力。有利的是，特殊铁磁过渡区的增强的纵向偏置效应不会降低温度相关的交换偏置场HUA（T）接近零的临界温度Tcr。

4. 发明授权

US07047625B2 Planarizing process 有权
标题翻译：平面化过程
公开(公告)号：US07047625B2
公开(公告)日：2006-05-23
申请号：US10647762
申请日：2003-08-25
申请人： Cherng-Chyi Han , Mao-Min Chen , Po Kang Wang
发明人： Cherng-Chyi Han , Mao-Min Chen , Po Kang Wang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/295 , G11B5/11 , G11B5/17 , G11B5/1871 , Y10T29/49002 , Y10T29/49021 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.
摘要翻译：用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。这增加了线圈的直流电阻。在本发明中，腔和线圈被光致抗蚀剂过度填充，然后被硬烘烤。然后将一层氧化铝沉积到多余光致抗蚀剂的表面上，随后开始CMP。氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。

5. 发明授权

US06960281B2 Method to make a wider trailing pole structure by self-aligned pole trim process 失效
标题翻译：通过自对准极修剪工艺制作更宽的尾柱结构的方法
公开(公告)号：US06960281B2
公开(公告)日：2005-11-01
申请号：US10394098
申请日：2003-03-21
申请人： Cherng-Chyi Han , Mao-Min Chen , Po Kang Wang , Fenglin Liu
发明人： Cherng-Chyi Han , Mao-Min Chen , Po Kang Wang , Fenglin Liu
IPC分类号： G11B5/31 , G11B5/39 , C23C14/34
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3967 , Y10T29/49032
摘要： A method for forming a trimmed upper pole piece for a magnetic write head, said pole piece having a tapered profile that is widest at its trailing edge. Such a pole piece is capable of writing narrow tracks with sharply and well defined patterns and minimal overwriting of adjacent tracks. The present method produces the necessary taper by using NiCr, NiFeCr, Rh or Ru as write gap filling materials which have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and are highly corrosion resistant. As a result, the write gap does not protrude to mask the effects of the ion-beam etch used to form the taper.
摘要翻译：一种用于形成用于磁性写入头的修整的上极片的方法，所述极片具有在其后缘处最宽的锥形轮廓。这样的极片能够以清晰明确的图案和相邻轨迹的最小重写来写入窄轨道。本方法通过使用NiCr，NiFeCr，Rh或Ru作为写入间隙填充材料产生必要的锥度，其具有基本上等于形成极片的其它层的蚀刻速率的蚀刻速率，并且具有高耐腐蚀性。结果，写入间隙不突出以掩盖用于形成锥形的离子束蚀刻的效果。

6. 发明申请

US20050047011A1 Short yoke stitched writer with low DC coil resistance 有权
标题翻译：具有低直流线圈电阻的短轭缝编写器
公开(公告)号：US20050047011A1
公开(公告)日：2005-03-03
申请号：US10647762
申请日：2003-08-25
申请人： Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wang
发明人： Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wang
IPC分类号： G11B5/11 , G11B5/147 , G11B5/17 , G11B5/187 , G11B5/29
CPC分类号： G11B5/295 , G11B5/11 , G11B5/17 , G11B5/1871 , Y10T29/49002 , Y10T29/49021 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.
摘要翻译：用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。这增加了线圈的直流电阻。在本发明中，腔和线圈被光致抗蚀剂过度填充，然后被硬烘烤。然后将一层氧化铝沉积到多余光致抗蚀剂的表面上，随后开始CMP。氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。

7. 发明授权

US06668443B2 Process for manufacturing a spin valve recording head 失效
标题翻译：制造旋转阀记录头的方法
公开(公告)号：US06668443B2
公开(公告)日：2003-12-30
申请号：US09917347
申请日：2001-07-30
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , G11B5/313 , G11B5/3903 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.
摘要翻译：通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。还描述了用于制造该结构的方法。

8. 发明授权

US06556377B2 Stitched write head design having a sunken shared pole 失效
公开(公告)号：US06556377B2
公开(公告)日：2003-04-29
申请号：US10236580
申请日：2002-09-06
申请人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
IPC分类号： G11B5147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49048
摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.

9. 发明授权

US06879474B2 Junction stability and yield for spin valve heads 失效
标题翻译：自旋阀头的结点稳定性和产量
公开(公告)号：US06879474B2
公开(公告)日：2005-04-12
申请号：US10718878
申请日：2003-11-21
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： B82Y10/00 , G11B5/313 , G11B5/3903 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.
摘要翻译：通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。还描述了用于制造该结构的方法。

10. 发明授权

US06469875B1 Stitched write head design having a sunken shared pole 失效
标题翻译：拼接写头设计有一个凹陷的共享极点
公开(公告)号：US06469875B1
公开(公告)日：2002-10-22
申请号：US09525672
申请日：2000-03-15
申请人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49048
摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.
摘要翻译：一种具有凹陷的共享极的缝合写头的结构和方法。该方法包括在第一半共享极上形成底部线圈电介质层。线圈形成在底部线圈电介质层上。接下来，在第一半共享极（S2）上形成第二半共享极（P1）。我们在结构上形成顶层线圈介电层。在关键步骤中，我们化学机械抛光顶层线圈介电层。写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。在写间隙层上形成上极（P3）和硬掩模。我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。

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