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1. 发明授权

US06879474B2 Junction stability and yield for spin valve heads 失效
标题翻译：自旋阀头的结点稳定性和产量
公开(公告)号：US06879474B2
公开(公告)日：2005-04-12
申请号：US10718878
申请日：2003-11-21
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： B82Y10/00 , G11B5/313 , G11B5/3903 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.
摘要翻译：通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。还描述了用于制造该结构的方法。

2. 发明授权

US06668443B2 Process for manufacturing a spin valve recording head 失效
标题翻译：制造旋转阀记录头的方法
公开(公告)号：US06668443B2
公开(公告)日：2003-12-30
申请号：US09917347
申请日：2001-07-30
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , G11B5/313 , G11B5/3903 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.
摘要翻译：通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。还描述了用于制造该结构的方法。

3. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

4. 发明授权

US6103136A Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) 失效
公开(公告)号：US6103136A
公开(公告)日：2000-08-15
申请号：US46007
申请日：1998-03-23
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
IPC分类号： G01R33/09 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

5. 发明授权

US07336452B2 Patterned exchange bias GMR using metallic buffer layer 失效
标题翻译：图案交换偏置GMR使用金属缓冲层
公开(公告)号：US07336452B2
公开(公告)日：2008-02-26
申请号：US11036957
申请日：2005-01-14
申请人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
发明人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49036 , Y10T29/49044 , Y10T29/49046
摘要： In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.
摘要翻译：在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。这样的结构很难制造。本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。还描述了用于制造该结构的方法。

6. 发明申请

US20050128649A1 Patterned exchange bias GMR using metallic buffer layer 失效
标题翻译：图案交换偏置GMR使用金属缓冲层
公开(公告)号：US20050128649A1
公开(公告)日：2005-06-16
申请号：US11036957
申请日：2005-01-14
申请人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
发明人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49036 , Y10T29/49044 , Y10T29/49046
摘要： In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.
摘要翻译：在基于底部旋转阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。这样的结构很难制造。本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。还描述了用于制造该结构的方法。

7. 发明授权

US06842969B2 Process for manufacturing a magnetic read head 失效
标题翻译：磁读头的制造工艺
公开(公告)号：US06842969B2
公开(公告)日：2005-01-18
申请号：US10116984
申请日：2002-04-05
申请人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
发明人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
IPC分类号： G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49036 , Y10T29/49044 , Y10T29/49046
摘要： In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by using a liftoff technique to form, on the free layer, a buffer layer having a trapezoidal cross-section, sloping sidewalls, and a central area of uniform thickness, whose width defines the read track. A suitable bias layer and leads are then deposited on this buffer layer.
摘要翻译：在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。这样的结构很难制造。本发明通过使用提升技术在自由层上形成具有梯形横截面，倾斜侧壁和均匀厚度的中心区域（其宽度限定读取轨迹）的缓冲层来克服该问题。然后将适当的偏置层和引线沉积在该缓冲层上。

8. 发明授权

US08184399B2 Magnetic write head with thin and thick portions for balancing writability and ate 有权
标题翻译：磁性写头，薄而厚的部分，用于平衡书写和吃
公开(公告)号：US08184399B2
公开(公告)日：2012-05-22
申请号：US12924416
申请日：2010-09-27
申请人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng-Chyi Han , Jiun-Ting Lee , Po-Kang Wang
发明人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng-Chyi Han , Jiun-Ting Lee , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.
摘要翻译：制造具有可变厚度的锥形主极的垂直磁记录（PMR）头。极的锥形部分在ABS尖端处，并且其可以由前缘或后缘处的斜面或两者形成。锥形终止形成最大厚度的区域t1，其向近处延伸一定距离。超过该最大厚度的区域t1，然后将极减小到恒定的最小厚度t2。磁轭连接到恒定最小厚度的区域。这个极设计需要更少的通量，因为它附着在磁轭上的磁极的较薄区域，而刚好在锥形ABS之前较厚的区域提供额外的磁通来驱动刚好在ABS之前的极点，因此高清晰度和场增益是实现了，但边缘明显减少。

9. 发明申请

US20120075749A1 Magnetic write head with thin and thick portions for balancing writability and ate 有权
公开(公告)号：US20120075749A1
公开(公告)日：2012-03-29
申请号：US12924416
申请日：2010-09-27
申请人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng Chyi Han , Jiun-Ting Lee , Po-Kang Wang
发明人： Yan Wu , Moris Dovek , Zhigang Bai , Cherng Chyi Han , Jiun-Ting Lee , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/10
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

10. 发明授权

US06469875B1 Stitched write head design having a sunken shared pole 失效
标题翻译：拼接写头设计有一个凹陷的共享极点
公开(公告)号：US06469875B1
公开(公告)日：2002-10-22
申请号：US09525672
申请日：2000-03-15
申请人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49048
摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.
摘要翻译：一种具有凹陷的共享极的缝合写头的结构和方法。该方法包括在第一半共享极上形成底部线圈电介质层。线圈形成在底部线圈电介质层上。接下来，在第一半共享极（S2）上形成第二半共享极（P1）。我们在结构上形成顶层线圈介电层。在关键步骤中，我们化学机械抛光顶层线圈介电层。写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。在写间隙层上形成上极（P3）和硬掩模。我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。

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