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1. 发明授权

US5664316A Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer 失效
标题翻译：制造具有连续纵向偏置层的磁阻读取传感器的方法
公开(公告)号：US5664316A
公开(公告)日：1997-09-09
申请号：US438430
申请日：1995-05-10
申请人： Mao-Min Chen , Robert Edward Fontana , Mohamad Towfik Krounbi , Kenneth Ting-Yuan Kung , James Hsi-Tang Lee , Jyh-Shiliey Jerry Lo , Ching Hwa Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Robert Edward Fontana , Mohamad Towfik Krounbi , Kenneth Ting-Yuan Kung , James Hsi-Tang Lee , Jyh-Shiliey Jerry Lo , Ching Hwa Tsang , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： G11B5/3932 , G11B5/399 , G11B5/3163 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A magnetoresistive (MR) read transducer having passive end regions separated by a central active region in which an MR layer is formed over substantially only the central active region and in which a magnetic bias layers is formed in each passive end region. Each of the magnetic bias layers includes a layer of ferromagnetic material and a layer of antiferromagnetic material overlaying and in contact with the ferromagnetic layer to provide an exchange-coupled magnetic bias field. Each of the magnetic bias layers form an abutting junction having magnetic and electrically continuity with the MR layer to produce a longitudinal magnetic bias field in the transducer.
摘要翻译：磁阻（MR）读取传感器，其具有被中心有源区隔开的被动端区，其中MR层基本上仅形成在中心有源区上，并且在每个被动端区中形成磁偏置层。每个磁偏置层包括铁磁材料层和叠层并与铁磁层接触的反铁磁材料层，以提供交换耦合磁偏置场。每个磁偏置层形成与MR层具有磁性和电连续性的邻接结，以在换能器中产生纵向磁偏置场。

2. 发明授权

US5668687A Magnetoresistive sensor employing an exchange-bias enhancing layer with a variable-composition transition region 失效
标题翻译：采用具有可变成分过渡区域的交换偏置增强层的磁阻传感器
公开(公告)号：US5668687A
公开(公告)日：1997-09-16
申请号：US593654
申请日：1996-01-29
申请人： Mao-Min Chen , Kenneth Ting-Yuan Kung , Ching Hwa Tsang
发明人： Mao-Min Chen , Kenneth Ting-Yuan Kung , Ching Hwa Tsang
IPC分类号： G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , G11B5/3903 , G11B5/399 , H01F10/3218
摘要： An exchange-biased magnetoresistive (MR) read transducer in which the MR layer composition is changed at the interface with an antiferromagnetic layer, which is in direct contact with the ferromagnetic MR layer. The exchange-bias field strength H.sub.UA in the MR layer is increased at room temperature by adding a specially-optimized transition region in the ferromagnetic MR layer at the interface. The percentage of iron in the ferromagnetic alloy varies from a higher value at the interface to a lower value at the opposite end of the transition region. The higher iron ratio at the antiferromagnetic interface enhances the exchange-bias field H.sub.UA and the lower iron ratio throughout the bulk of the ferromagnetic MR layer maintains the lower coercivity preferred in the layer, thereby enhancing the longitudinal bias field with respect to the MR coercivity. Advantageously, the enhanced longitudinal bias effect of the special ferromagnetic transition region does not reduce the critical temperature T.sub.cr at which the temperature-dependent exchange-bias field H.sub.UA (T) approaches zero.
摘要翻译：交换偏置磁阻（MR）读取传感器，其中MR层组成在与铁磁MR层直接接触的反铁磁层的界面处改变。 MR层中的交换偏置场强HUA在室温下通过在界面处的铁磁性MR层中加入特别优化的过渡区而增加。铁磁合金中铁的百分比从界面处的较高值到过渡区域相对端的较低值变化。反铁磁性界面处铁含量越高，交换偏置场HUA越大，铁磁MR层整体的铁含量越低，维持层中优选的矫顽力越低，从而增强纵向偏磁场相对于MR矫顽力。有利的是，特殊铁磁过渡区的增强的纵向偏置效应不会降低温度相关的交换偏置场HUA（T）接近零的临界温度Tcr。

3. 发明授权

US5668523A Magnetoresistive sensor employing an exchange-bias enhancing layer 失效
标题翻译：使用交换偏置增强层的磁阻传感器
公开(公告)号：US5668523A
公开(公告)日：1997-09-16
申请号：US449605
申请日：1995-05-23
申请人： Mao-Min Chen , Kenneth Ting-Yuan Kung , Ching Hwa Tsang
发明人： Mao-Min Chen , Kenneth Ting-Yuan Kung , Ching Hwa Tsang
IPC分类号： G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , G11B5/3903 , G11B5/399 , H01F10/3218
摘要： An exchange-biased magnetoresistive (MR) read transducer in which the MR layer composition is changed at the interface with an antiferromagnetic layer, which is in direct contact with the ferromagnetic MR layer. The exchange-bias field strength H.sub.UA in the MR layer is increased at room temperature by adding a specially-optimized transition region in the ferromagnetic MR layer at the interface. The percentage of iron in the ferromagnetic alloy varies from a higher value at the interface to a lower value at the opposite end of the transition region. The higher iron ratio at the antiferromagnetic interface enhances the exchange-bias field H.sub.UA and the lower iron ratio throughout the bulk of the ferromagnetic MR layer maintains the lower coercivity preferred in the layer, thereby enhancing the longitudinal bias field with respect to the MR coercivity. Advantageously, the enhanced longitudinal bias effect of the special ferromagnetic transition region does not reduce the critical temperature T.sub.cr at which the temperature-dependent exchange-bias field H.sub.UA (T) approaches zero.
摘要翻译：交换偏置磁阻（MR）读取传感器，其中MR层组成在与铁磁MR层直接接触的反铁磁层的界面处改变。 MR层中的交换偏置场强HUA在室温下通过在界面处的铁磁性MR层中加入特别优化的过渡区而增加。铁磁合金中铁的百分比从界面处的较高值到过渡区域相对端的较低值变化。反铁磁性界面处铁含量越高，交换偏置场HUA越大，铁磁MR层整体的铁含量越低，维持层中优选的矫顽力越低，从而增强纵向偏磁场相对于MR矫顽力。有利的是，特殊铁磁过渡区的增强的纵向偏置效应不会降低温度相关的交换偏置场HUA（T）接近零的临界温度Tcr。

4. 发明授权

US5680281A Edge-biased magnetoresistive sensor 失效
标题翻译：边缘偏置磁阻传感器
公开(公告)号：US5680281A
公开(公告)日：1997-10-21
申请号：US482898
申请日：1995-06-07
申请人： Kenneth Ting-Yuan Kung , Po-Kang Wang
发明人： Kenneth Ting-Yuan Kung , Po-Kang Wang
IPC分类号： G01R33/09 , G11B5/127 , G11B5/39 , H01F10/00 , G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/399
摘要： A magnetoresistive (MR) sensor comprising a layer of ferromagnetic material forming an MR sensing element wherein the MR sensor is biased by utilizing only the MR stripe uniaxial anisotropy and the shape anisotropy of the active region of the sensing element. The active region of the MR element has a generally square geometry to provide the desired shape anisotropy. The MR sensor is biased at approximately 45 degrees by defining the magnetization at the four edges of the sense element active region utilizing its shape anisotropy and canting the magnetic easy axis at an appropriate angle during fabrication of the MR sensor. To minimize Barkhausen noise, a single magnetic domain configuration is achieved by reducing the sensor active region dimensions, i.e., stripe height and track width, to less than the characteristic domain wall thickness such that the formation of multiple magnetic domains is no longer energetically favorable. A magnetic biasing material such as a layer of antiferromagnetic material to provide exchange coupling, can be provided at a pair of opposing edges to maintain the magnetization at the edges in the desired orientation and to stabilize the sensor.
摘要翻译：磁阻（MR）传感器包括形成MR感测元件的铁磁材料层，其中通过仅利用感测元件的有源区域的MR条状单轴各向异性和形状各向异性来偏置MR传感器。 MR元件的有源区具有大致正方形的几何形状以提供期望的形状各向异性。通过在感测元件有源区域的四个边缘处利用其形状各向异性限定磁化强度，将MR传感器偏置在大约45度，并且在MR传感器的制造过程中将磁性容易轴倾斜到适当的角度。为了最小化巴克豪森噪声，通过将传感器有源区域尺寸（即条带高度和轨道宽度）减小到小于特征域壁厚度来实现单个磁畴构造，使得多个磁畴的形成不再在能量方面有利。可以在一对相对边缘处提供诸如反铁磁材料层的磁偏置材料，以提供交换耦合，以保持在期望取向的边缘处的磁化并使传感器稳定。

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