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1. 发明授权

US5498291A Arrangement for coating or etching substrates 失效
标题翻译：涂布或蚀刻基板的布置
公开(公告)号：US5498291A
公开(公告)日：1996-03-12
申请号：US407783
申请日：1995-03-17
申请人： Manfred Arnold , Guido Blang , Rainer Gegenwart , Jochen Ritter , Helmut Stoll
发明人： Manfred Arnold , Guido Blang , Rainer Gegenwart , Jochen Ritter , Helmut Stoll
IPC分类号： C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H05H1/46 , C23C16/00 , C23F1/02
CPC分类号： H01J37/32706 , H01J37/32761 , H05H1/46
摘要： The invention relates to an arrangement for coating or etching substrates. In this arrangement an HF substrate bias voltage is generated without contact. For this purpose plasma sources are equipped with a bias pot which is disposed at the dark space distance from a substrate carrier and acted upon by HF. Depending on the source used, the bias pot can be constructed as an independent unit or as a component part of the source connected so as to be conducting-for example as an HF magnetron. Via this coupled-in HF power the dc potential on the carrier, and consequently the ion bombardment on the substrate, can be set specifically.
摘要翻译：本发明涉及一种用于涂覆或蚀刻基板的布置。在这种布置中，产生HF衬底偏置电压而不接触。为此，等离子体源装备有偏置电位器，该偏置电位器设置在距离衬底载体的黑暗空间距离处并由HF作用。根据所使用的源，偏置电位器可以被构造为独立的单元或作为源极的组成部分而被连接以导通，例如作为HF磁控管。通过这种耦合的HF功率，载体上的直流电势以及因此基板上的离子轰击可以被具体设定。

2. 发明授权

US5423971A Arrangement for coating substrates 失效
标题翻译：涂布基材的布置
公开(公告)号：US5423971A
公开(公告)日：1995-06-13
申请号：US179216
申请日：1994-01-10
申请人： Manfred Arnold , Guido Blang , Rainer Gegenwart , Klaus Michael , Michael Scherer , Jochen Ritter , Oliver Burkhardt
发明人： Manfred Arnold , Guido Blang , Rainer Gegenwart , Klaus Michael , Michael Scherer , Jochen Ritter , Oliver Burkhardt
IPC分类号： C23C16/40 , C23C16/50 , C23C16/509 , C23C16/54 , H01J37/32 , C23C14/34
CPC分类号： H01J37/32091 , H01J37/32577 , H01J37/32706
摘要： The invention relates to an electrode configuration for a device for generating a plasma. RF is coupled contactlessly via a capacitive coupling electrode disposed at the dark space distance into a carrier backside of a coating installation. Dark space shields on the coating side define the plasma zone and prevent the formation of parasitic plasmas. HF substrate bias voltage on the moving substrate carrier is achieved with a defined plasma zone and the development of parasitic plasmas is avoided.
摘要翻译：本发明涉及一种用于产生等离子体的装置的电极配置。 RF通过设置在黑暗空间距离处的电容耦合电极非接触地耦合到涂层设备的载体背面。涂层侧的黑色空间屏蔽限定了等离子体区域，并防止了寄生等离子体的形成。移动衬底载体上的HF衬底偏置电压通过限定的等离子体区域实现，避免了寄生等离子体的发展。

3. 发明授权

US5224202A Apparatus for the evaporation of liquids 失效
标题翻译：用于液体蒸发的装置
公开(公告)号：US5224202A
公开(公告)日：1993-06-29
申请号：US762932
申请日：1991-09-19
申请人： Manfred Arnold , Rainer Gegenwart , Sonja Noll , Jochen Ritter , Helmut Stoll
发明人： Manfred Arnold , Rainer Gegenwart , Sonja Noll , Jochen Ritter , Helmut Stoll
IPC分类号： C23C14/22 , C23C16/44 , C23C16/448 , C23C16/455 , F22B3/02 , H01L21/205 , H01L21/31
CPC分类号： C23C16/4483 , C23C16/4485 , C23C16/4486
摘要： A heated evaporator housing is provided at its inlet with an ultrasonic atomizer for reducing monomer to small droplets and a permeable porous body completely occupying a cross section of the housing between the inlet and the outlet. A vacuum pump and a reaction chamber for coating substrates are provided downstream of the outlet.
摘要翻译：在其入口处设置有加热的蒸发器壳体，其具有用于将单体降低到小液滴的超声波雾化器，以及在入口和出口之间完全占据壳体的横截面的可渗透多孔体。在出口的下游设置有用于涂布基板的真空泵和反应室。

4. 发明授权

US5318928A Method for the surface passivation of sensors using an in situ sputter cleaning step prior to passivation film deposition 失效
标题翻译：在钝化膜沉积之前使用原位溅射清洗步骤进行传感器表面钝化的方法
公开(公告)号：US5318928A
公开(公告)日：1994-06-07
申请号：US897310
申请日：1992-06-11
申请人： Rainer Gegenwart , Jochen Ritter , Helmut Stoll , Norbert Weimer , Hans-Dieter Wurczinger
发明人： Rainer Gegenwart , Jochen Ritter , Helmut Stoll , Norbert Weimer , Hans-Dieter Wurczinger
IPC分类号： C23C16/32 , C23C16/40 , C23C16/52 , G01L1/22 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/463
CPC分类号： H01L21/02164 , C23C16/325 , C23C16/401 , C23C16/52 , G01L1/2293 , H01L21/02126 , H01L21/02167 , H01L21/02274 , H01L21/02301 , H01L21/3121 , H01L21/314 , H01L21/31612 , Y10S438/913 , Y10S438/958
摘要： The method calls for introducing an inert gas into a tank where a high frequency energy source is applied to internal electrodes for the ignition of a plasma within the tank. The sensor surface is cleaned by sputtering away impurities from the sensor surface by means of plasma particles striking the sensor surface. Next, a monomer containing silicon and a reactive gas are introduced into the tank with continuous throttling of the inert gas feed and maintenance of the plasma, while the electric power characteristics fed into the plasma are being controlled. This leads to the deposition on the sensor surface of a compound composed of particles from the monomer containing silicon and from the reactive gas.
摘要翻译：该方法要求将惰性气体引入罐中，其中高频能量源施加到内部电极以使罐内的等离子体点火。通过溅射传感器表面的等离子体颗粒从传感器表面溅射杂质来清洁传感器表面。接下来，在控制供给到等离子体的电功率特性的同时，将含有硅和反应性气体的单体引入到罐中，同时连续地节流惰性气体进料和维持等离子体。这导致在由包含硅的单体和来自反应性气体的颗粒组成的化合物的传感器表面上的沉积。

5. 发明授权

US5237152A Apparatus for thin-coating processes for treating substrates of great surface area 失效
标题翻译：用于处理大面积基材的薄涂层工艺的设备
公开(公告)号：US5237152A
公开(公告)日：1993-08-17
申请号：US768014
申请日：1991-09-30
申请人： Rainer Gegenwart , Roland Gesche , Karl-Heinz Kretschmer , Jochen Ritter , Sonja Noll
发明人： Rainer Gegenwart , Roland Gesche , Karl-Heinz Kretschmer , Jochen Ritter , Sonja Noll
IPC分类号： C23C14/22 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32229 , H01J37/32192
摘要： Apparatus for thin-coating processes for the treatment of substrates (8) of large surface area using a plasma (6) which is excited by microwaves (M) and the latter are coupled from a source by means of a waveguide (1) consisting of at least one hollow conductor (1), as well as by means of a horn antenna, into a plasma chamber (5), the waveguide (W) having a substantially rectangular aperture, an area is provided at the end of the hollow conductor (Q) with a slit-like constriction (Q), a rectangular horn (2) adjoins this area, and a compensation area (3) is provided between the largest aperture of the rectangular horn (2), as well as of the plasma chamber (5).
摘要翻译：用于使用由微波（M）激发的等离子体（6）和后者的等离子体（6）处理具有大表面积的基板（8）的薄涂层工艺的装置通过波导（1）由源至少一个空心导体（1）以及通过喇叭天线插入到等离子体腔（5）中，所述波导（W）具有基本上矩形的孔，在中空导体的端部设置区域 Q），狭缝状收缩（Q），矩形喇叭（2）邻接该区域，并且在矩形喇叭（2）的最大孔径以及等离子体室之间设置补偿区域（3）（5）。

6. 发明授权

US5144196A Particle source, especially for reactive ionic etching and plasma-supported CVD processes 失效
标题翻译：粒子源，特别是用于反应离子蚀刻和等离子体支持的CVD工艺
公开(公告)号：US5144196A
公开(公告)日：1992-09-01
申请号：US768994
申请日：1991-09-30
申请人： Rainer Gegenwart , Jochen Ritter
发明人： Rainer Gegenwart , Jochen Ritter
IPC分类号： C23C16/50 , C23C16/511 , H01J27/18 , H01J37/08 , H01J37/32 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32266 , H01J37/32678
摘要： Particle source, especially for reactive ion etching and plasma-enhanced CVD processes in pass-through apparatus for the treatment of large-area substrates (4) having a container completely enveloping a first plasma (19), a magnetic field generator (8, 9, 10) which fulfills the electron-cyclotron resonance, a waveguide (15) connected to the container for the delivery of electromagnetic waves, preferably microwaves (17), for the production of the plasma (19), a coupling window (16) as well as a gas feeding system for supplying the plasma process with reactive, and, for example, inert gas, the first plasma (19) being enveloped by a plasma chamber (7), the interior spaces of the plasma chamber (7) and of the adjacent vacuum chamber (2) are connected to one another, an additional guard window (12) is situated in the plasma chamber (7) directly in front of the coupling window and has an approximately constant gap (13) between it and the chamber walls (7c, 7d), a separate feeding is performed of for example inert gas (11) into the space between coupling window (16) and guard window (12) and of reactive gas (6) between guard window (12) and substrate (4), and an intermediate plasma is ignitable between coupling window (16) and guard window (12).
摘要翻译：粒子源，特别是用于处理具有完全包围第一等离子体（19）的容器的大面积基板（4）的通过装置中的反应离子蚀刻和等离子体增强CVD工艺，磁场发生器（8,9 ，10），连接到用于输送等离子体（19）的用于输送电磁波的容器的波导（15），优选地为微波（17）;耦合窗口（16），其形成为电子回旋共振以及作为用于向等离子体处理提供反应性的气体供给系统，例如惰性气体，由等离子体室（7）包围的第一等离子体（19），等离子体室（7）的内部空间和相邻的真空室（2）彼此连接，附加的保护窗口（12）直接位于耦合窗口前方的等离子体室（7）中，并且在其与腔室之间具有大致恒定的间隙（13）墙壁（7c，7d），单独的喂养是执行例如惰性气体（11）进入耦合窗（16）和保护窗（12）之间的空间以及保护窗（12）和衬底（4）之间的反应气体（6）之间，并且中间等离子体可以在耦合窗（16）和保护窗（12）。

7. 发明授权

US06572782B2 Process for recycling CdTe/Cds thin film solar cell modules 失效
公开(公告)号：US06572782B2
公开(公告)日：2003-06-03
申请号：US09939390
申请日：2001-08-24
申请人： Manuel Diequez Campo , Dieter Bonnet , Rainer Gegenwart , Jutta Beier
发明人： Manuel Diequez Campo , Dieter Bonnet , Rainer Gegenwart , Jutta Beier
IPC分类号： C22B700
CPC分类号： C22B17/02 , C22B7/001 , H01L31/1828 , Y02E10/543 , Y02P10/214 , Y02W30/827
摘要： Recycling process for CdTe/CdS thin film-solar cell modules in which the modules are mechanically disintegrated into module fragments, the module fragments are exposed to an oxygen-containing atmosphere at a temperature of at least 300° C. causing a pyrolysis of adhesive material contained in the module fragments in form of a hydrocarbon based plastics material and the gaseous decomposition products that are generated during the pyrolysis are discharged, and, afterwards, the module fragments freed from the adhesive means are exposed to a chlorine-containing gas atmosphere at a temperature of more than 400° C. causing an etching process wherein the CdCl2 and TeCl4 that are generated in the etching process are made to condense and precipitate by cooling.

8. 发明授权

US5097794A Apparatus for transporting substrates in a vacuum coating system 失效
标题翻译：用于在真空涂料系统中运输基材的装置
公开(公告)号：US5097794A
公开(公告)日：1992-03-24
申请号：US616342
申请日：1990-11-21
申请人： Peter Mahler , Klaus Michael , Rainer Gegenwart , Michael Scherer
发明人： Peter Mahler , Klaus Michael , Rainer Gegenwart , Michael Scherer
IPC分类号： B65G49/07 , C23C14/50 , C23C14/56 , H01L21/677
CPC分类号： H01L21/67706 , C23C14/50 , C23C14/568 , H01L21/67712
摘要： In a device for transporting substrates in vacuum coating systems with several stations, comprising several substrate holders 16 of plate-like configurations which can e moved across the stations along a prescribed path of transportation in a vertical position and which interact with rails 13, 14 being provided in the area of their foot part 15 below the substrates 22, 23 to be mounted to the substrate holders 16, the foot part 15 of the substrate holder 16 has a pair of rails 13, 14 spaced parallel apart and disposed in a vertical plane. The smaller sides thereof, which face one another, have longitudinal grooves 13a, 14 which correspond with rollers 7, 8 or sliding pads being disposed stationary on the bottom part of the device and being provided in rows corresponding to the course of the grooves and in planes that are on top of each other and spaced vertically apart. The substrate holder 16 has a shaft-like recess 24 which extends from the top downward into the area of the foot part 15 parallel to the rails and into which, while passing the station, extends a flat heating device 11 extending vertically toward the bottom and disposed above the substrate holder 16 at the top wall part 4a. The substrate holder 16 surrounds the heating device 11 in a U-shaped manner.
摘要翻译：在用于在具有多个工位的真空涂覆系统中传送衬底的装置中，包括几个板状构造的衬底保持器16，其可以沿着垂直位置的规定的运输路径跨过工位移动，并且与轨道13,14相互作用设置在其底部22,23下方的要安装到基板保持器16的底部部分15的区域中，基板保持器16的底部15具有平行间隔开并且设置在垂直平面中的一对导轨13,14 。其彼此面对的较小侧面具有纵向槽13a，14，其对应于辊7,8或滑动垫片固定地设置在装置的底部上并且设置成与槽的过程相对应的行，并且相互垂直分开的平面。衬底保持器16具有轴状凹部24，其从顶部向下延伸到平行于轨道的脚部15的区域中，并且在通过所述工位的同时延伸朝向底部垂直延伸的平坦加热装置11，设置在顶壁部4a的基板保持件16的上方。基板保持件16以U形的方式围绕加热装置11。

9. 发明授权

US5334298A Sputtering cathode 失效
标题翻译：溅射阴极
公开(公告)号：US5334298A
公开(公告)日：1994-08-02
申请号：US963467
申请日：1992-10-20
申请人： Rainer Gegenwart
发明人： Rainer Gegenwart
IPC分类号： C23C14/34 , H01J37/34 , C23C14/35
CPC分类号： H01J37/3435 , C23C14/3407 , H01J37/3408 , H01J37/3441
摘要： The invention relates to a sputtering cathode operating on the magnetron principle, which has a cathode body equipped with a target having a sputtering surface and a peripheral surface. In back of the target a magnet system is provided which has poles of opposite polarity lying one opposite the other for the production of magnetic lines of force which issue from the target and, after traversing arcuate paths, re-enter the target. The marginal areas of the target lying outside of the erosion zone are covered over by an extension of the dark space shield which runs parallel to the sputtering surface and has an inner margin. The dark space shield 11 is electrically floating and is separated from the target by a gap which is so large that no plasma can ignite between the target and dark space shield, so that only the exposed target is sputtered.
摘要翻译：本发明涉及一种以磁控管原理工作的溅射阴极，其具有装备有具有溅射表面和外围表面的靶的阴极体。在目标的后面，提供磁体系统，其具有相反极性的极性，彼此相反，用于产生从目标发出的磁力线，并且在穿过弧形路径之后重新进入目标。位于侵蚀区外的靶的边缘区域被平行于溅射表面延伸的具有内边缘的暗空间屏蔽的延伸部分覆盖。暗空间屏蔽11是电浮动的并且通过如此大的间隙与目标物分离，使得靶和暗空间屏蔽之间不会发生等离子体点燃，使得仅暴露的靶被溅射。

10. 发明授权

US4966677A Cathode sputtering apparatus on the magnetron principle with a hollow cathode and a cylindrical target 失效
标题翻译：具有空心阴极和圆柱形靶的磁控管原理的阴极溅射装置
公开(公告)号：US4966677A
公开(公告)日：1990-10-30
申请号：US344244
申请日：1989-04-27
申请人： Hans Aichert , Rainer Gegenwart , Reiner Kukla , Klaus Wilmes , Jorg Kieser
发明人： Hans Aichert , Rainer Gegenwart , Reiner Kukla , Klaus Wilmes , Jorg Kieser
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , H01J37/3405
摘要： Cathode sputtering apparatus having a hollow cathode on the magnetron principle with a cathode base (5) in which a hollow target (9) with a cylindrical sputtering surface (10) and a cylindrical outer surface is disposed. The cathode base (5) has a cooling passage (6). The target is externally surrounded by a magnet system (18) with magnet poles for the production of a rotationally symmetrical tunnel of magnetic lines of force closed on the circumference and over the sputtering surface. Outside of the space surrounded by the sputtering surface (10) there is disposed at least one anode (3, 4). A transport path for a substrate to be coated passes through the target (9) and the at least one anode.The cooling passage (6) is sealed off from the target (9) by a wall (7). Due to a narrow clearance, as soon as the target (9) reaches its operating temperature it comes in thermal contact with the wall (7). The [north] pole faces (N) of the magnet system (18) are on one side and the other [south] pole faces (S) lie on the other side of the end faces of the target (9) and radially on a radius which is equal to or greater than the radius of the sputtering surface (10). The magnet system (18) is held at a freely adjustable ("floating") potential in operation by insulating spaces (11, 19, 10).
摘要翻译：在具有阴极基体（5）的磁控管原理上具有空心阴极的阴极溅射装置设置有具有圆柱形溅射表面（10）的中空靶（9）和圆柱形外表面。阴极基座（5）具有冷却通道（6）。目标被具有磁极的磁体系统（18）外部包围，用于产生在圆周上和溅射表面上的磁力线的旋转对称的隧道。在由溅射表面（10）围绕的空间的外部设置有至少一个阳极（3,4）。待涂覆的基底的输送路径穿过靶（9）和至少一个阳极。冷却通道（6）通过壁（7）与靶（9）密封。由于狭窄的间隙，只要目标（9）达到其工作温度，它就与墙壁（7）热接触。磁体系（18）的[北]极面（N）位于一侧，另一[南]极面（S）位于靶（9）端面的另一侧，半径等于或大于溅射表面（10）的半径。磁体系统（18）通过绝缘空间（11,19,10）保持在操作中可自由调节（“浮动”）的电位。

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