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1. 发明授权

US5237152A Apparatus for thin-coating processes for treating substrates of great surface area 失效
标题翻译：用于处理大面积基材的薄涂层工艺的设备
公开(公告)号：US5237152A
公开(公告)日：1993-08-17
申请号：US768014
申请日：1991-09-30
申请人： Rainer Gegenwart , Roland Gesche , Karl-Heinz Kretschmer , Jochen Ritter , Sonja Noll
发明人： Rainer Gegenwart , Roland Gesche , Karl-Heinz Kretschmer , Jochen Ritter , Sonja Noll
IPC分类号： C23C14/22 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32229 , H01J37/32192
摘要： Apparatus for thin-coating processes for the treatment of substrates (8) of large surface area using a plasma (6) which is excited by microwaves (M) and the latter are coupled from a source by means of a waveguide (1) consisting of at least one hollow conductor (1), as well as by means of a horn antenna, into a plasma chamber (5), the waveguide (W) having a substantially rectangular aperture, an area is provided at the end of the hollow conductor (Q) with a slit-like constriction (Q), a rectangular horn (2) adjoins this area, and a compensation area (3) is provided between the largest aperture of the rectangular horn (2), as well as of the plasma chamber (5).
摘要翻译：用于使用由微波（M）激发的等离子体（6）和后者的等离子体（6）处理具有大表面积的基板（8）的薄涂层工艺的装置通过波导（1）由源至少一个空心导体（1）以及通过喇叭天线插入到等离子体腔（5）中，所述波导（W）具有基本上矩形的孔，在中空导体的端部设置区域 Q），狭缝状收缩（Q），矩形喇叭（2）邻接该区域，并且在矩形喇叭（2）的最大孔径以及等离子体室之间设置补偿区域（3）（5）。

2. 发明授权

US5224202A Apparatus for the evaporation of liquids 失效
标题翻译：用于液体蒸发的装置
公开(公告)号：US5224202A
公开(公告)日：1993-06-29
申请号：US762932
申请日：1991-09-19
申请人： Manfred Arnold , Rainer Gegenwart , Sonja Noll , Jochen Ritter , Helmut Stoll
发明人： Manfred Arnold , Rainer Gegenwart , Sonja Noll , Jochen Ritter , Helmut Stoll
IPC分类号： C23C14/22 , C23C16/44 , C23C16/448 , C23C16/455 , F22B3/02 , H01L21/205 , H01L21/31
CPC分类号： C23C16/4483 , C23C16/4485 , C23C16/4486
摘要： A heated evaporator housing is provided at its inlet with an ultrasonic atomizer for reducing monomer to small droplets and a permeable porous body completely occupying a cross section of the housing between the inlet and the outlet. A vacuum pump and a reaction chamber for coating substrates are provided downstream of the outlet.
摘要翻译：在其入口处设置有加热的蒸发器壳体，其具有用于将单体降低到小液滴的超声波雾化器，以及在入口和出口之间完全占据壳体的横截面的可渗透多孔体。在出口的下游设置有用于涂布基板的真空泵和反应室。

3. 发明授权

US5423971A Arrangement for coating substrates 失效
标题翻译：涂布基材的布置
公开(公告)号：US5423971A
公开(公告)日：1995-06-13
申请号：US179216
申请日：1994-01-10
申请人： Manfred Arnold , Guido Blang , Rainer Gegenwart , Klaus Michael , Michael Scherer , Jochen Ritter , Oliver Burkhardt
发明人： Manfred Arnold , Guido Blang , Rainer Gegenwart , Klaus Michael , Michael Scherer , Jochen Ritter , Oliver Burkhardt
IPC分类号： C23C16/40 , C23C16/50 , C23C16/509 , C23C16/54 , H01J37/32 , C23C14/34
CPC分类号： H01J37/32091 , H01J37/32577 , H01J37/32706
摘要： The invention relates to an electrode configuration for a device for generating a plasma. RF is coupled contactlessly via a capacitive coupling electrode disposed at the dark space distance into a carrier backside of a coating installation. Dark space shields on the coating side define the plasma zone and prevent the formation of parasitic plasmas. HF substrate bias voltage on the moving substrate carrier is achieved with a defined plasma zone and the development of parasitic plasmas is avoided.
摘要翻译：本发明涉及一种用于产生等离子体的装置的电极配置。 RF通过设置在黑暗空间距离处的电容耦合电极非接触地耦合到涂层设备的载体背面。涂层侧的黑色空间屏蔽限定了等离子体区域，并防止了寄生等离子体的形成。移动衬底载体上的HF衬底偏置电压通过限定的等离子体区域实现，避免了寄生等离子体的发展。

4. 发明授权

US5318928A Method for the surface passivation of sensors using an in situ sputter cleaning step prior to passivation film deposition 失效
标题翻译：在钝化膜沉积之前使用原位溅射清洗步骤进行传感器表面钝化的方法
公开(公告)号：US5318928A
公开(公告)日：1994-06-07
申请号：US897310
申请日：1992-06-11
申请人： Rainer Gegenwart , Jochen Ritter , Helmut Stoll , Norbert Weimer , Hans-Dieter Wurczinger
发明人： Rainer Gegenwart , Jochen Ritter , Helmut Stoll , Norbert Weimer , Hans-Dieter Wurczinger
IPC分类号： C23C16/32 , C23C16/40 , C23C16/52 , G01L1/22 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/463
CPC分类号： H01L21/02164 , C23C16/325 , C23C16/401 , C23C16/52 , G01L1/2293 , H01L21/02126 , H01L21/02167 , H01L21/02274 , H01L21/02301 , H01L21/3121 , H01L21/314 , H01L21/31612 , Y10S438/913 , Y10S438/958
摘要： The method calls for introducing an inert gas into a tank where a high frequency energy source is applied to internal electrodes for the ignition of a plasma within the tank. The sensor surface is cleaned by sputtering away impurities from the sensor surface by means of plasma particles striking the sensor surface. Next, a monomer containing silicon and a reactive gas are introduced into the tank with continuous throttling of the inert gas feed and maintenance of the plasma, while the electric power characteristics fed into the plasma are being controlled. This leads to the deposition on the sensor surface of a compound composed of particles from the monomer containing silicon and from the reactive gas.
摘要翻译：该方法要求将惰性气体引入罐中，其中高频能量源施加到内部电极以使罐内的等离子体点火。通过溅射传感器表面的等离子体颗粒从传感器表面溅射杂质来清洁传感器表面。接下来，在控制供给到等离子体的电功率特性的同时，将含有硅和反应性气体的单体引入到罐中，同时连续地节流惰性气体进料和维持等离子体。这导致在由包含硅的单体和来自反应性气体的颗粒组成的化合物的传感器表面上的沉积。

5. 发明授权

US5498291A Arrangement for coating or etching substrates 失效
标题翻译：涂布或蚀刻基板的布置
公开(公告)号：US5498291A
公开(公告)日：1996-03-12
申请号：US407783
申请日：1995-03-17
申请人： Manfred Arnold , Guido Blang , Rainer Gegenwart , Jochen Ritter , Helmut Stoll
发明人： Manfred Arnold , Guido Blang , Rainer Gegenwart , Jochen Ritter , Helmut Stoll
IPC分类号： C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H05H1/46 , C23C16/00 , C23F1/02
CPC分类号： H01J37/32706 , H01J37/32761 , H05H1/46
摘要： The invention relates to an arrangement for coating or etching substrates. In this arrangement an HF substrate bias voltage is generated without contact. For this purpose plasma sources are equipped with a bias pot which is disposed at the dark space distance from a substrate carrier and acted upon by HF. Depending on the source used, the bias pot can be constructed as an independent unit or as a component part of the source connected so as to be conducting-for example as an HF magnetron. Via this coupled-in HF power the dc potential on the carrier, and consequently the ion bombardment on the substrate, can be set specifically.
摘要翻译：本发明涉及一种用于涂覆或蚀刻基板的布置。在这种布置中，产生HF衬底偏置电压而不接触。为此，等离子体源装备有偏置电位器，该偏置电位器设置在距离衬底载体的黑暗空间距离处并由HF作用。根据所使用的源，偏置电位器可以被构造为独立的单元或作为源极的组成部分而被连接以导通，例如作为HF磁控管。通过这种耦合的HF功率，载体上的直流电势以及因此基板上的离子轰击可以被具体设定。

6. 发明授权

US5144196A Particle source, especially for reactive ionic etching and plasma-supported CVD processes 失效
标题翻译：粒子源，特别是用于反应离子蚀刻和等离子体支持的CVD工艺
公开(公告)号：US5144196A
公开(公告)日：1992-09-01
申请号：US768994
申请日：1991-09-30
申请人： Rainer Gegenwart , Jochen Ritter
发明人： Rainer Gegenwart , Jochen Ritter
IPC分类号： C23C16/50 , C23C16/511 , H01J27/18 , H01J37/08 , H01J37/32 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32266 , H01J37/32678
摘要： Particle source, especially for reactive ion etching and plasma-enhanced CVD processes in pass-through apparatus for the treatment of large-area substrates (4) having a container completely enveloping a first plasma (19), a magnetic field generator (8, 9, 10) which fulfills the electron-cyclotron resonance, a waveguide (15) connected to the container for the delivery of electromagnetic waves, preferably microwaves (17), for the production of the plasma (19), a coupling window (16) as well as a gas feeding system for supplying the plasma process with reactive, and, for example, inert gas, the first plasma (19) being enveloped by a plasma chamber (7), the interior spaces of the plasma chamber (7) and of the adjacent vacuum chamber (2) are connected to one another, an additional guard window (12) is situated in the plasma chamber (7) directly in front of the coupling window and has an approximately constant gap (13) between it and the chamber walls (7c, 7d), a separate feeding is performed of for example inert gas (11) into the space between coupling window (16) and guard window (12) and of reactive gas (6) between guard window (12) and substrate (4), and an intermediate plasma is ignitable between coupling window (16) and guard window (12).
摘要翻译：粒子源，特别是用于处理具有完全包围第一等离子体（19）的容器的大面积基板（4）的通过装置中的反应离子蚀刻和等离子体增强CVD工艺，磁场发生器（8,9 ，10），连接到用于输送等离子体（19）的用于输送电磁波的容器的波导（15），优选地为微波（17）;耦合窗口（16），其形成为电子回旋共振以及作为用于向等离子体处理提供反应性的气体供给系统，例如惰性气体，由等离子体室（7）包围的第一等离子体（19），等离子体室（7）的内部空间和相邻的真空室（2）彼此连接，附加的保护窗口（12）直接位于耦合窗口前方的等离子体室（7）中，并且在其与腔室之间具有大致恒定的间隙（13）墙壁（7c，7d），单独的喂养是执行例如惰性气体（11）进入耦合窗（16）和保护窗（12）之间的空间以及保护窗（12）和衬底（4）之间的反应气体（6）之间，并且中间等离子体可以在耦合窗（16）和保护窗（12）。

7. 发明授权

US5069930A Method for the evaporation of monomers that are liquid at room temperature 失效
标题翻译：蒸发室内液体的方法
公开(公告)号：US5069930A
公开(公告)日：1991-12-03
申请号：US501230
申请日：1990-03-29
申请人： Ingo Hussla , Jochen Ritter
发明人： Ingo Hussla , Jochen Ritter
IPC分类号： C30B25/14 , C23C16/44 , C23C16/448
CPC分类号： C23C16/4485
摘要： Monomers containing silicon and oxygen which are liquid at room temperature and have a low vapor pressure are fed in a liquid state via a mass flow regulator to an evaporator provided with a body having capillary action where the liquid is evaporated by radiant heat. Evaporated monomer is fed to the reaction zone of a vacuum chamber where thin coatings are applied on substrates by chemical vapor deposition.

8. 发明授权

US4947789A Apparatus for vaporizing monomers that flow at room temperature 失效
标题翻译：用于蒸发在室温下流动的单体的装置
公开(公告)号：US4947789A
公开(公告)日：1990-08-14
申请号：US267077
申请日：1988-11-04
申请人： Ingo Hussla , Jochen Ritter
发明人： Ingo Hussla , Jochen Ritter
IPC分类号： C30B25/14 , C23C16/44 , C23C16/448
CPC分类号： C23C16/4485
摘要： An evaporator chamber has an entry end with a conduit connected to the output of a mass flow regulator, an exit end connected to a vacuum, and a wall surface extending therebetween. A body having capillary action is disposed in the chamber and has one end connected to the conduit and a free surface spaced from the wall surface in line of sight thereof. Heating means for the wall surface heats the body radiantly and causes monomer carried thereby to evaporate.
摘要翻译：蒸发器室具有入口端，导管连接到质量流量调节器的输出端，连接到真空的出口端和在其间延伸的壁表面。具有毛细管作用的主体设置在腔室中，并且其一端连接到管道，并且在其视线上与壁表面间隔开的自由表面。用于壁表面的加热装置使身体辐射加热，并使由此携带的单体蒸发。

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