专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070099426A1 Polishing method, polishing apparatus, and electrolytic polishing apparatus 审中-公开
标题翻译：抛光方法，抛光装置和电解抛光装置
公开(公告)号：US20070099426A1
公开(公告)日：2007-05-03
申请号：US11316845
申请日：2005-12-27
申请人： Manabu Tsujimura , Akira Fukunaga , Yutaka Wada , Itsuki Kobata
发明人： Manabu Tsujimura , Akira Fukunaga , Yutaka Wada , Itsuki Kobata
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C25F7/00 , H01L21/3212 , H01L21/32125
摘要： A polishing method polishes a substrate so as to remove an interconnect metal film and a barrier film formed on portions other than interconnect recesses. The method includes performing a first polishing process of polishing a surface of the substrate After performing the first polishing process, the surface of the substrate is cleaned. After cleaning, a second polishing process is performed for further polishing the surface of the substrate. At least one of performing the first polishing process and performing the second polishing process includes performing electrolytic polishing.
摘要翻译：抛光方法抛光衬底以去除互连金属膜和形成在互连凹槽之外的部分上的阻挡膜。该方法包括进行抛光基板的表面的第一抛光处理。在进行第一抛光处理之后，清洁基板的表面。在清洁之后，执行第二抛光工艺以进一步抛光衬底的表面。执行第一抛光处理并执行第二抛光处理中的至少一个包括进行电解抛光。

2. 发明授权

US06875335B2 Electrolytic machining method and apparatus 有权
标题翻译：电解加工方法及装置
公开(公告)号：US06875335B2
公开(公告)日：2005-04-05
申请号：US10449515
申请日：2003-06-02
申请人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
发明人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
IPC分类号： B23H3/08 , C25D11/02 , C25F3/00 , B23H3/00 , C25B9/00 , C25B13/00 , C25B15/00 , C25D17/00
CPC分类号： C25F3/00 , B23H3/08
摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.
摘要翻译：将作为工件的阳极和与阳极相对的具有预定间隔的阴极置于超纯水中。在工件和阴极之间设置促进超纯水的离解并具有透水性的催化材料。在催化材料内部形成超纯水流，在工件和阴极之间施加电压，将超纯水中的水分子分解为氢离子和氢氧根离子，并将得到的氢氧根离子供给到从而通过化学溶解反应或由氢氧根离子介导的氧化反应来进行工件的去除处理或氧化膜形成。因此，可以通过在超纯水中使用氢氧根离子进行清洁处理，在工件的加工表面上不会留下杂质。

3. 发明授权

US06368493B1 Electrolytic machining method and apparatus 有权
公开(公告)号：US06368493B1
公开(公告)日：2002-04-09
申请号：US09645405
申请日：2000-08-25
申请人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
发明人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
IPC分类号： B23H300
CPC分类号： C25F3/00 , B23H3/08
摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

4. 发明授权

US06602396B2 Electrolytic machining method and apparatus 有权
公开(公告)号：US06602396B2
公开(公告)日：2003-08-05
申请号：US09996674
申请日：2001-11-30
申请人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
发明人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
IPC分类号： B23H300
CPC分类号： C25F3/00 , B23H3/08
摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

5. 发明申请

US20070254558A1 Polishing Apparatus and Polishing Method 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：US20070254558A1
公开(公告)日：2007-11-01
申请号：US11661141
申请日：2005-08-26
申请人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
发明人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
IPC分类号： B24B37/04 , H01L21/00
CPC分类号： H01L21/6708 , B24B37/005 , B24B37/042 , B24B37/046 , B24B49/006 , B24B57/02
摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).
摘要翻译：抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

6. 发明申请

US20060086618A1 Method and apparatus for forming interconnects 审中-公开
标题翻译：用于形成互连的方法和装置
公开(公告)号：US20060086618A1
公开(公告)日：2006-04-27
申请号：US11254789
申请日：2005-10-21
申请人： Akira Fukunaga , Manabu Tsujimura
发明人： Akira Fukunaga , Manabu Tsujimura
IPC分类号： C25D5/02
CPC分类号： H01L21/76873 , C25D7/123 , C25D17/001 , H01L21/288 , H01L21/32115 , H01L21/32125 , H01L21/76849 , H01L21/76877
摘要： An interconnects-forming method can form a film of interconnect material, having a sufficient adhesion, by electroplating uniformly on an entire surface of a substrate and thus can form highly-reliable embedded interconnects even when the design rule is strict, and which can remove an extra interconnect material at a lower pressure. The interconnects-forming method, including: forming a conductive film on a surface of a substrate having interconnect recesses formed in an insulating film, said conductive film being insoluble in an electrolytic plating solution for the formation of a film of an interconnect material; forming a film of the interconnect material by electroplating on a surface of the conductive film serving as a seed film while filling the interconnect recesses with the interconnect material; and removing an extra interconnect material of the film formed on the conductive film, thereby forming interconnects of the interconnect material embedded in the interconnect recesses.
摘要翻译：互连形成方法可以通过均匀地电镀在基板的整个表面上形成具有足够的粘附性的互连材料的膜，并且因此即使设计规则是严格的也可以形成高度可靠的嵌入式互连，并且可以去除额外的互连材料在较低的压力。所述互连形成方法包括：在具有形成在绝缘膜中的互连凹槽的基板的表面上形成导电膜，所述导电膜不溶于用于形成互连材料膜的电解电镀液; 在用所述互连材料填充所述互连凹槽的同时，通过电镀在所述导电膜的表面上形成所述互连材料的膜; 以及除去形成在导电膜上的膜的额外互连材料，从而形成嵌入在互连凹槽中的互连材料的互连。

7. 发明申请

US20070205112A1 Polishing apparatus and polishing method 审中-公开
标题翻译：抛光设备和抛光方法
公开(公告)号：US20070205112A1
公开(公告)日：2007-09-06
申请号：US11797480
申请日：2007-05-03
申请人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
发明人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
IPC分类号： B23H3/00
CPC分类号： B23H5/08 , B24B53/001 , B24B53/017 , C09G1/02 , C25F3/02 , C25F7/00 , H01L21/3212 , H01L21/32125 , H01L21/76814 , H01L21/76825 , H01L21/7684
摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).
摘要翻译：抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

8. 发明申请

US20050282378A1 Interconnects forming method and interconnects forming apparatus 审中-公开
标题翻译：互连形成方法和互连形成装置
公开(公告)号：US20050282378A1
公开(公告)日：2005-12-22
申请号：US10941882
申请日：2004-09-16
申请人： Akira Fukunaga , Manabu Tsujimura , Hiroaki Inoue
发明人： Akira Fukunaga , Manabu Tsujimura , Hiroaki Inoue
IPC分类号： C23C16/00 , C23C16/04 , C23C16/06 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76843 , C23C16/042 , C23C16/045 , C23C16/06 , H01L21/7684 , H01L21/76849
摘要： An interconnects forming method and an interconnects forming apparatus are useful for embedding a conductive material (interconnect material), such as copper or silver, into interconnect recesses provided in a surface of a substrate, such as a semiconductor wafer, to thereby form embedded interconnects, and selectively covering the surfaces of embedded interconnects with a metal film (protective film) to provide a multi-level structure. The interconnects forming method comprises: providing a substrate which has been prepared by forming a barrier layer over a substrate surface having interconnect recesses formed in an insulating film, and then forming a film of an interconnect material in the interconnect recesses and over the substrate surface; removing extra interconnect material formed over the substrate surface, thereby forming interconnects with the interconnect material embedded in the interconnect recesses and making the barrier layer present in the other portion than the interconnect-formed portion exposed; and forming a metal film selectively on surfaces of interconnects.
摘要翻译：互连形成方法和互连形成装置可用于将诸如铜或银的导电材料（互连材料）嵌入设置在诸如半导体晶片的基板的表面中的互连凹槽中，从而形成嵌入式互连，并且用金属膜（保护膜）选择性地覆盖嵌入式互连件的表面以提供多层结构。互连形成方法包括：提供通过在绝缘膜上形成具有互连凹槽的衬底表面上形成阻挡层，然后在互连凹槽中并在衬底表面上形成互连材料的膜而制备的衬底; 去除形成在衬底表面上的额外的互连材料，从而与嵌入在互连凹槽中的互连材料形成互连，并使阻挡层存在于暴露的互连形成部分的另一部分中; 并在互连表面上选择性地形成金属膜。

9. 发明授权

US4906257A Method of and apparatus for treating waste gas from semiconductor manufacturing process 失效
标题翻译：从半导体制造过程中处理废气的方法和设备
公开(公告)号：US4906257A
公开(公告)日：1990-03-06
申请号：US248905
申请日：1988-09-23
申请人： Akira Fukunaga , Manabu Tsujimura , Ohsato, Masaaki
发明人： Akira Fukunaga , Manabu Tsujimura , Ohsato, Masaaki
IPC分类号： B01D53/46
CPC分类号： B01D53/46
摘要： A method of and apparatus for treating waste gas from semiconductor manufacturing equipment with a dry solid absorbent. A bypass pipe which is equipped with a bypass valve is provided between inlet and outlet pipes of a container packed with the absorbent, and when a reaction chamber of the semiconductor manufacturing equipment is evacuated to a level below that of atmospheric pressure, the bypass valve is opened to prevent the large amount of non-toxic gas that is discharged from the reaction chamber during the evacuation from being fed to the absorbent-packed container. Large variations in the flow rate of the gas are thus avoided and safe and efficient waste gas treatment with a dry solid absorbent having a relatively small particle diameter is possible.

10. 发明申请

US20070243797A1 Polishing method and polishing apparatus 审中-公开
标题翻译：抛光方法和抛光装置
公开(公告)号：US20070243797A1
公开(公告)日：2007-10-18
申请号：US11785190
申请日：2007-04-16
申请人： Akira Fukunaga , Noburu Shimizu , Shintaro Kamioka , Manabu Tsujimura
发明人： Akira Fukunaga , Noburu Shimizu , Shintaro Kamioka , Manabu Tsujimura
IPC分类号： B24B49/00 , B24B1/00
CPC分类号： B24B37/042 , B24B49/045 , H01L22/26
摘要： A polishing method for polishing a workpiece using the chemical polishing process endpoint detecting technology is applicable to actual polishing processes and polishing apparatus. The polishing method including pressing the workpiece against a polishing surface of a polishing table, moving the workpiece and the polishing surface relatively to each other to polish the workpiece, and disposing a gas suction pipe having a gas inlet port, directly above the polishing surface, supplying an atmospheric gas from above the polishing surface through the gas inlet port to a gas detector via the gas suction pipe, and monitoring a particular gas contained in the atmospheric gas with the gas detector while the workpiece is being polished.
摘要翻译：使用化学抛光处理终点检测技术对工件进行抛光的抛光方法适用于实际的抛光工艺和抛光装置。抛光方法包括将工件压靠在抛光台的研磨面上，相对移动工件和抛光表面以抛光工件，并且在抛光表面正上方设置具有气体入口的气体吸入管，通过气体吸入管将来自抛光表面上方的大气气体通过气体入口供给到气体检测器，并且在抛光工件时，利用气体检测器监测包含在气体中的特定气体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式