专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08263490B2 Formation method of metallic electrode of semiconductor device and metallic electrode formation apparatus 有权
标题翻译：半导体器件和金属电极形成装置的金属电极的形成方法
公开(公告)号：US08263490B2
公开(公告)日：2012-09-11
申请号：US12923576
申请日：2010-09-28
申请人： Manabu Tomisaka , Hidetoshi Katou , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki
发明人： Manabu Tomisaka , Hidetoshi Katou , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki
IPC分类号： H01L21/44
CPC分类号： G01B11/06 , G01B11/306 , H01L21/32115 , H01L21/7684 , H01L22/12 , H01L22/20 , H01L24/27 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , Y10T29/52 , H01L2924/01014 , H01L2924/00
摘要： A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.
摘要翻译：公开了半导体器件的金属电极的形成方法。该方法包括：获取关于半导体衬底的表面部分的表面形状的数据; 并且使变形装置基于数据使半导体衬底变形，使得切割平面和表面部分之间的距离落入所需切割量的精度。在使半导体基板变形时，使用多个致动器作为变形装置。多个致动器的间距被设定为大于半导体衬底的厚度分布的空间频率的波长的一半的值，小于或等于该波长的值。

2. 发明申请

US20110207264A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20110207264A1
公开(公告)日：2011-08-25
申请号：US12905395
申请日：2010-10-15
申请人： Manabu TOMISAKA , Akira Tai , Kazuo Akamatsu , Yutaka Fukuda , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
发明人： Manabu TOMISAKA , Akira Tai , Kazuo Akamatsu , Yutaka Fukuda , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
IPC分类号： H01L21/56
CPC分类号： H01L21/304 , H01L29/66333 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes cutting a part of a resin insulating layer formed on a surface of a semiconductor substrate with a cutting tool. The cutting the part of the resin insulating layer includes cutting a portion of the resin insulating layer that has a surface on which a metal layer is disposed. The cutting the portion of the resin insulating layer is performed in such a manner that, in a stress distribution inside the resin insulating layer along an edge portion of the cutting tool and a peripheral portion of the edge portion, a width at 90% of a maximum value is not more than 1.3 μm.
摘要翻译：半导体器件的制造方法包括：利用切削工具切断形成在半导体基板的表面上的树脂绝缘层的一部分。切割树脂绝缘层的一部分包括切割具有设置有金属层的表面的树脂绝缘层的一部分。切割树脂绝缘层的部分是这样一种方式进行的：在树脂绝缘层沿着切削工具的边缘部分和边缘部分的周边部分的应力分布中，90％的宽度最大值不大于1.3μm。

3. 发明申请

US20110198733A1 SEMICONDUCTOR DEVICE AND METHOD OF PATTERNNING RESIN INSULATION LAYER ON SUBSTRATE OF THE SAME 有权
标题翻译：半导体器件及其基片上树脂绝缘层图案的方法
公开(公告)号：US20110198733A1
公开(公告)日：2011-08-18
申请号：US12887874
申请日：2010-09-22
申请人： Manabu Tomisaka , Michio Kameyama , Terukazu Fukaya , Kazuhito Katoh , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
发明人： Manabu Tomisaka , Michio Kameyama , Terukazu Fukaya , Kazuhito Katoh , Yutaka Fukuda , Akira Tai , Kazuo Akamatsu , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
IPC分类号： H01L29/06 , H01L21/66
CPC分类号： H01L21/76804 , H01L23/293 , H01L23/3171 , H01L23/5226 , H01L24/03 , H01L24/11 , H01L24/741 , H01L2224/02166 , H01L2224/0384 , H01L2224/0391 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/0517 , H01L2224/05171 , H01L2224/05172 , H01L2224/05572 , H01L2224/05573 , H01L2224/05582 , H01L2224/05583 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05669 , H01L2224/11505 , H01L2224/131 , H01L2224/16 , H01L2224/749 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L2924/181 , H01L2924/00014 , H01L2924/01026 , H01L2924/01014 , H01L2924/00 , H01L2224/05552
摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.
摘要翻译：在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

4. 发明授权

US5294584A Process for producing a denitration catalyst 失效
标题翻译：制造脱硝催化剂的方法
公开(公告)号：US5294584A
公开(公告)日：1994-03-15
申请号：US771403
申请日：1991-10-02
申请人： Naomi Yoshida , Hitoshi Yamasaki , Ikuhisa Hamada , Yasuyoshi Kato , Kunihiko Konishi , Toshiaki Matsuda , Yuji Fukuda
发明人： Naomi Yoshida , Hitoshi Yamasaki , Ikuhisa Hamada , Yasuyoshi Kato , Kunihiko Konishi , Toshiaki Matsuda , Yuji Fukuda
IPC分类号： B01D53/86 , B01D53/94 , B01J21/06 , B01J23/22 , B01J23/24 , B01J35/06 , B01J37/02 , B01J21/08 , B01J23/16
CPC分类号： B01D53/9431 , B01D53/8628 , B01J35/06 , B01J37/0217 , B01J21/06 , B01J21/063 , B01J23/22 , B01J23/24
摘要： A process for producing a denitration catalyst comprising the following steps of immersing a base material composed of an inorganic fiber cloth in an aqueous slurry containing 5 to 20% by weight of at least one sol-form substance selected from the group consisting of silica sol, titania sol and zirconia sol, as a first component, 20 to 70% by weight of at least one inorganic oxide fine powder selected from the group consisting of those of titania, zirconia and cordierite, as a second component, and 1 to 3% by weight of at least one organic binder selected from the group consisting of polyvinyl alcohol, polyvinyl acetate and carboxymethyl cellulose, as a third component, removing superfluous liquid from the resulting base material, drying the base material, coating catalyst components onto the surface of the dried base material, and drying and calcining the resulting material, are proposed.
摘要翻译： 1.一种脱硝催化剂的制造方法，其特征在于，将由无机纤维布构成的基材浸渍在含有5〜20重量％的至少一种选自二氧化硅溶胶，二氧化钛溶胶和氧化锆溶胶作为第一组分，20至70重量％的至少一种选自二氧化钛，氧化锆和堇青石的无机氧化物细粉末作为第二组分，和1至3重量％作为第三组分的选自聚乙烯醇，聚乙酸乙烯酯和羧甲基纤维素的至少一种有机粘合剂的重量，从所得基材中除去多余的液体，干燥基材，将催化剂组分涂布到干燥基料，干燥和煅烧所得材料。

5. 发明申请

US20120132827A1 ION ACCELERATION METHOD, ION ACCELERATION APPARATUS, ION BEAM IRRADIATION APPARATUS, AND ION BEAM IRRADIATION APPARATUS FOR MEDICAL USE 审中-公开
标题翻译：离子加速方法，离子加速装置，离子束辐照装置和用于医疗用途的离子束辐照装置
公开(公告)号：US20120132827A1
公开(公告)日：2012-05-31
申请号：US13292871
申请日：2011-11-09
申请人： Yuji Fukuda , Tatsufumi Nakamura
发明人： Yuji Fukuda , Tatsufumi Nakamura
IPC分类号： H01J27/24
CPC分类号： H01J27/24 , A61N2005/1088 , H01J37/08 , H01J2237/0815 , H05H15/00 , H05H2007/082 , H05H2277/10
摘要： A laser light is emitted from a laser light source and focused inside a cluster-gas. A nozzle is installed in a vacuum. The nozzle is configured so that a jet of gas can be jetted from its top into the vacuum. The gas is a mixed gas of helium and carbon dioxide. The gas jetted into the vacuum undergoes adiabatic expansion with a steep cooling, which produces the cluster-gas. In the cluster gas, a large number of CO2 molecules aggregate into nanosized CO2 clusters which suspend in the gas of He atoms. It is preferred that the light focal point be located in a rear part of the cluster-gas. The most preferred are 80% to 100% positions of the orifice as seen from the front side.
摘要翻译：激光从激光光源发射并集中在集束气体内。喷嘴安装在真空中。喷嘴被配置为使得气体喷射从其顶部喷射到真空中。气体是氦和二氧化碳的混合气体。喷射到真空中的气体经过绝热膨胀，陡峭的冷却，产生簇气。在簇气体中，大量的二氧化碳分子聚集成悬浮在He原子气体中的纳米二氧化碳簇。优选的是，光焦点位于簇 - 气体的后部。最优选的是从前侧观察的孔口的80％至100％的位置。

6. 发明授权

US4345537A Apparatus for restraining and berthing a floating body 失效
标题翻译：用于限制和停泊浮体的装置
公开(公告)号：US4345537A
公开(公告)日：1982-08-24
申请号：US198397
申请日：1980-10-20
申请人： Shigeo Ueda , Yuji Fukuda
发明人： Shigeo Ueda , Yuji Fukuda
IPC分类号： B63B21/00 , E02B3/26 , B63B59/02
CPC分类号： E02B3/26 , B63B21/00
摘要： An apparatus for restraining and berthing a floating body or vessel on a water surface at a quay wall, comprises a driving subsystem, a movable member driven by the driving subsystem and forwardly and backwardly guided by guide members, and an elastic end piece such as a marine fender secured to the movable member and projecting away from the quay wall. The apparatus according to the invention can exactly move the end piece to a desired position for restraining the floating body and can utilize precompressive forces arising in the end piece, thereby accommodating tolerances or unintensional errors of the quay wall in construction and absorbing rocking energy of the floating body to hold it firmly in place in a harbor. The apparatus according to the invention retracts its elastic piece in a rest or inoperative position and extends it in an operative position to be in contact with a floating body such as a ship or boat to serve as a marine fender.
摘要翻译：一种用于限制和停泊在码头墙上的水面上的浮体或容器的装置，包括驱动子系统，由驱动子系统驱动并由引导构件向前和向后引导的可动构件，以及弹性端件，例如船用挡泥板固定在活动件上并远离码头墙。根据本发明的装置可以将端件精确地移动到用于限制浮体的所需位置，并且可以利用出现在端件中的预压力，从而适应建筑中的码头壁的公差或无意的误差并吸收摇摆能量漂浮的身体将其牢固地固定在港口。根据本发明的装置将其弹性件缩回到休息或不工作的位置，并将其延伸在与诸如船或船的浮动体接触的操作位置中，以用作海洋挡泥板。

7. 发明授权

US06431769B1 Substrate processing system and substrate processing method 有权
公开(公告)号：US06431769B1
公开(公告)日：2002-08-13
申请号：US09694820
申请日：2000-10-24
申请人： Yuji Fukuda , Kunie Ogata
发明人： Yuji Fukuda , Kunie Ogata
IPC分类号： G03B500
CPC分类号： H01L21/67253 , G03F7/162 , H01L21/6715 , H01L21/681
摘要： A coating unit for coating a substrate with a treatment solution and a peripheral aligner, which has a mounting table rotatable and movable in at least one direction and irradiates the peripheral portion of the substrate on the mounting table with light from an irradiating portion to expose a coating film on the substrate, are provided in a substrate processing system. The peripheral aligner has film thickness measuring means provided with a sensor member for measuring a film thickness of the coating film. It is not necessary to separately provide a unit for measuring the film thickness outside of the system, thus preventing the substrate from being contaminated or dropped to be damaged when the film thickness is measured.

8. 发明授权

US6004047A Method of and apparatus for processing photoresist, method of evaluating photoresist film, and processing apparatus using the evaluation method 失效
标题翻译：用于处理光致抗蚀剂的方法和设备，光致抗蚀剂膜的评价方法以及使用该评价方法的处理装置
公开(公告)号：US6004047A
公开(公告)日：1999-12-21
申请号：US34335
申请日：1998-03-04
申请人： Masami Akimoto , Kosuke Yoshihara , Yuji Fukuda
发明人： Masami Akimoto , Kosuke Yoshihara , Yuji Fukuda
IPC分类号： G03F7/16 , H01L21/00 , G03D5/00
CPC分类号： G03F7/162 , H01L21/00
摘要： A resist processing method includes setting a substrate at a specific temperature, forming a resist film on the substrate by applying a resist solution onto the substrate while turning the substrate set at the specific temperature, heating the substrate on which the resist film has been formed, cooling the substrate a specific temperature after the heating process, wherein the thickness of the resist film on the substrate is measured between the heating process and the cooling process.
摘要翻译：抗蚀剂处理方法包括：在特定温度下设置基板，在基板上形成抗蚀剂膜，同时在基板上施加抗蚀剂溶液，同时转动具有特定温度的基板，加热形成有抗蚀剂膜的基板，在加热处理之后将衬底冷却到特定温度，其中在加热过程和冷却过程之间测量衬底上的抗蚀剂膜的厚度。

9. 外观设计

USD260387S Dock fender 失效
公开(公告)号：USD260387S
公开(公告)日：1981-08-25
申请号：US967453
申请日：1978-12-07
申请人： Yuji Fukuda , Shinichi Kajigaya
设计人： Yuji Fukuda , Shinichi Kajigaya

10. 发明授权

US09316310B2 Working machine 有权
标题翻译：工作机
公开(公告)号：US09316310B2
公开(公告)日：2016-04-19
申请号：US13570490
申请日：2012-08-09
申请人： Ryosuke Kinugawa , Keisuke Miura , Isao Tanaka , Kazuyoshi Arii , Yuji Fukuda
发明人： Ryosuke Kinugawa , Keisuke Miura , Isao Tanaka , Kazuyoshi Arii , Yuji Fukuda
IPC分类号： F16H61/421 , F16H61/468
CPC分类号： F16H61/421 , B60Y2200/411 , F16H61/468
摘要： A pressure control valve for controlling a travel primary side pressure that is a pressure of a primary side of a travel operation device is controlled by a control unit, thus the travel primary side pressure is controlled, and thereby a traveling speed is intended to be increased, preventing an engine stall.
摘要翻译：用于控制作为行驶操作装置的初级侧的行驶压力的行驶一次侧压力的压力控制阀由控制单元控制，从而控制行驶一次侧压力，从而提高行驶速度，防止发动机失速。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式