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1. 发明授权

US08425786B2 Plasma etching method and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US08425786B2
公开(公告)日：2013-04-23
申请号：US12700903
申请日：2010-02-05
申请人： Makoto Satake , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
发明人： Makoto Satake , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
IPC分类号： B44C1/22 , C25F3/00
CPC分类号： G11B5/84 , C23F4/00 , H01F10/14 , H01F10/16 , H01J37/321 , H01J37/32146 , H01J37/32449 , H01L43/12
摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
摘要翻译：在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属，用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

2. 发明申请

US20110100954A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20110100954A1
公开(公告)日：2011-05-05
申请号：US12700903
申请日：2010-02-05
申请人： Makoto SATAKE , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
发明人： Makoto SATAKE , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： G11B5/84 , C23F4/00 , H01F10/14 , H01F10/16 , H01J37/321 , H01J37/32146 , H01J37/32449 , H01L43/12
摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
摘要翻译：在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属，用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

3. 发明授权

US06180019B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06180019B2
公开(公告)日：2001-01-30
申请号：US08979949
申请日：1997-11-26
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H102
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

4. 发明授权

US06499424B2 Plasma processing apparatus and method 有权
公开(公告)号：US06499424B2
公开(公告)日：2002-12-31
申请号：US09909879
申请日：2001-07-23
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H100
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

5. 发明授权

US06846363B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06846363B2
公开(公告)日：2005-01-25
申请号：US10139302
申请日：2002-05-07
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H01J37/32 , C23C16/00 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

6. 发明授权

US06833051B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06833051B2
公开(公告)日：2004-12-21
申请号：US10139281
申请日：2002-05-07
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： H05H100
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma processing apparatus includes a vacuum chamber having a structure that surrounds a space where plasma is generated, a sample stage disposed in the chamber on which a sample to be processed is placed and coil antenna providing an electric field to the space. The structure has a non-conductive member surrounding the space and a conductive member covering the non-conductive member, both of which are disposed between the antenna and the space. The conductive member is electrically floated at least when the plasma is generated.
摘要翻译：等离子体处理装置包括具有围绕产生等离子体的空间的结构的真空室，设置在其上放置待处理样品的室中的样品台和向该空间提供电场的线圈天线。该结构具有围绕空间的非导电构件和覆盖非导电构件的导电构件，两者都设置在天线和空间之间。至少当产生等离子体时，导电构件电漂浮。

7. 发明授权

US06481370B2 Plasma processsing apparatus 有权
标题翻译：等离子处理装置
公开(公告)号：US06481370B2
公开(公告)日：2002-11-19
申请号：US09732307
申请日：2000-12-08
申请人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
发明人： Hideyuki Kazumi , Tsutomu Tetsuka , Ryoji Nishio , Masatsugu Arai , Ken Yoshioka , Tsunehiko Tsubone , Akira Doi , Manabu Edamura , Kenji Maeda , Saburo Kanai
IPC分类号： C23C1600
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/321
摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要翻译：通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除等离子体点火后。在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

8. 发明授权

US08496781B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08496781B2
公开(公告)日：2013-07-30
申请号：US11182793
申请日：2005-07-18
申请人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
发明人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/32082
摘要： The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation. The plasma processing apparatus according to the invention is based upon the dry etching apparatus having parallel plate structure and is characterized in that a low-pass filter having high impedance to a frequency of a high frequency power source for generating discharge, having small resistance to direct current and grounded is connected to an electrode for generating discharge which is arranged in a position opposite to the work piece and to which the high frequency power source for generating discharge is connected or a low-pass filter having small resistance to direct current and grounded and a direct-current power source connected in series with it are connected to the electrode for generating discharge.
摘要翻译：本发明提供了一种基于干蚀刻装置的等离子体处理装置，其可以抑制由溅射引起的工件对真空室的壁的污染，异物的发生，运行成本的增加更换真空室的壁和操作速度的恶化。根据本发明的等离子体处理装置基于具有平行板结构的干式蚀刻装置，其特征在于，具有高阻抗频率的低通滤波器，用于产生放电的高频电源的频率，具有较小的直接阻抗电流和接地连接到用于产生放电的电极，其布置在与工件相对的位置，并且用于产生放电的高频电源被连接到该电极上，或者具有对直流电阻和接地电阻小的低通滤波器，与其串联连接的直流电源连接到用于产生放电的电极。

9. 发明授权

US08029874B2 Plasma processing apparatus and method for venting the same to atmosphere 有权
标题翻译：等离子体处理装置和方法，用于将其排放到大气中
公开(公告)号：US08029874B2
公开(公告)日：2011-10-04
申请号：US12035759
申请日：2008-02-22
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H05H1/24
CPC分类号： C23C16/4401
摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
摘要翻译：在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径，并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得淋浴板的背侧的压力成为压力这是相对于处理室中的压力的正压力并且小于喷淋板的耐受压力。

10. 发明申请

US20100319854A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100319854A1
公开(公告)日：2010-12-23
申请号：US12546783
申请日：2009-08-25
申请人： Kenetsu YOKOGAWA , Kenji Maeda , Tomoyuki Tamura
发明人： Kenetsu YOKOGAWA , Kenji Maeda , Tomoyuki Tamura
IPC分类号： H01L21/3065
CPC分类号： H01J37/3244 , H01J37/32091 , H01J37/32532 , H01J37/3266
摘要： In a plasma processing apparatus conducting surface processing on a sample to be processed with plasma, an upper electrode includes a shower plate having first gas holes bored through it, a conductor plate disposed at back of the shower plate and having second gas holes bored through it, an insulation plate disposed in a center part of the conductor plate and having third gas holes bored through it, and an antenna basic member unit disposed at back of the conductor plate and having a temperature control function unit and a gass distribution unit. First and second minute gaps are formed in a radial direction at an interface between the shower plate and the insulation plate, and at an interface between the insulation plate and the conductor plate, respectively. Centers of the first gas holes are shifted from centers of the third gas holes in a circumference or radial direction.
摘要翻译：在对等离子体处理的样品进行表面处理的等离子体处理装置中，上部电极包括具有穿过其的第一气孔的喷淋板，布置在喷淋板背面的导体板，并且具有穿过其的第二气孔设置在导体板的中心部分并具有穿过其的第三气孔的绝缘板，以及设置在导体板背面并具有温度控制功能单元和气体分配单元的天线基座部件单元。在喷淋板和绝缘板之间的界面处以及在绝缘板和导体板之间的界面处，分别在径向上形成第一和第二微小间隙。第一气孔的中心在第三气孔的中心沿周向或径向偏移。

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