专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08425786B2 Plasma etching method and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US08425786B2
公开(公告)日：2013-04-23
申请号：US12700903
申请日：2010-02-05
申请人： Makoto Satake , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
发明人： Makoto Satake , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
IPC分类号： B44C1/22 , C25F3/00
CPC分类号： G11B5/84 , C23F4/00 , H01F10/14 , H01F10/16 , H01J37/321 , H01J37/32146 , H01J37/32449 , H01L43/12
摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
摘要翻译：在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属，用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

2. 发明申请

US20110100954A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20110100954A1
公开(公告)日：2011-05-05
申请号：US12700903
申请日：2010-02-05
申请人： Makoto SATAKE , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
发明人： Makoto SATAKE , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： G11B5/84 , C23F4/00 , H01F10/14 , H01F10/16 , H01J37/321 , H01J37/32146 , H01J37/32449 , H01L43/12
摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
摘要翻译：在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属，用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

3. 发明申请

US20090159211A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090159211A1
公开(公告)日：2009-06-25
申请号：US12041741
申请日：2008-03-04
申请人： Tatehito Usui , Tsuyoshi Yoshida , Tsuyoshi Matsumoto , Satoru Muto , Kenetsu Yokogawa
发明人： Tatehito Usui , Tsuyoshi Yoshida , Tsuyoshi Matsumoto , Satoru Muto , Kenetsu Yokogawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32972 , G01N21/68 , H01J37/32091 , H01J37/32935
摘要： The invention provides a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously realize long life and ensure sufficient light to be received via a light transmitting unit, to enable long term stable operation and to improve the processing accuracy via accurate etching quantity detection. In a plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light transmitting unit composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained by the light transmitting unit, wherein the end surface of the light transmitting unit through which light is entered is arranged at a distance of five times or greater of the mean free path of gas molecules within the vacuum reactor from the end surface of the shower plate facing the plasma.
摘要翻译：本发明提供了一种用于测量被处理材料的蚀刻量的等离子体处理装置，并且利用正在处理的样品表面上的光学干涉来检测蚀刻终点，以同时实现长寿命并确保足够的光被接收通过光发射单元，能够进行长期稳定的操作，并通过精确的蚀刻量检测来提高加工精度。在用于通过在淋浴板和下部电极之间产生等离子体来处理被处理样品的等离子体处理装置中，用于检测经由淋浴板处理的样品的表面的光的检测器包括：光导体，进入光的分光器和用于分析由光发射单元获得的光的分光镜，其中进入光的光透射单元的端面布置在气体的平均自由程的五倍或更大的距离真空反应器内的分子从淋浴板的端面朝向等离子体。

4. 发明申请

US20090301655A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20090301655A1
公开(公告)日：2009-12-10
申请号：US12484288
申请日：2009-06-15
申请人： Kenetsu Yokogawa , Tatehito Usui
发明人： Kenetsu Yokogawa , Tatehito Usui
IPC分类号： C23F1/08
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/31116 , H01L21/32137
摘要： A plasma processing apparatus includes an upper electrode which allows a source gas to flow into a vacuum chamber via a shower plate, a lower electrode facing the upper electrode, on which a sample to be processed is placed, and a detector which detects light from the surface of the sample to be processed via the shower plate. The detector includes at least one light introducing section made up of a transparent body to which the light is input and a spectroscope which analyzes the light obtained at the light introducing section. A plurality of the light-introducing through holes are provided in the shower plate for the at least one light introducing section, and the at least one light introducing section is made up of two members.
摘要翻译：一种等离子体处理装置，包括：上部电极，其允许源气体经由喷淋板流入真空室;面向上部电极的下部电极，待处理样品被放置在所述上部电极上;以及检测器，通过淋浴板处理样品的表面。检测器包括至少一个由输入光的透明体构成的光导部分和分析光导入部所得的光的分光镜。在用于至少一个光导入部的喷淋板中设置有多个导光孔，并且所述至少一个光导入部由两个部件构成。

5. 发明申请

US20070131354A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070131354A1
公开(公告)日：2007-06-14
申请号：US11353165
申请日：2006-02-14
申请人： Kenetsu Yokogawa , Tatehito Usui
发明人： Kenetsu Yokogawa , Tatehito Usui
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/31116 , H01L21/32137
摘要： The present invention makes an improvement of the sensitivity (accuracy) of monitoring of an amount of etching or remaining amount of etching on the surface of a sample to be processed of a plasma processing apparatus compatible with a long-term continuous stable operation. A transparent body end face of a light introducing section which detects a wavelength of reflected light from the surface of the sample to be processed 3 and a variation in light intensity of each wavelength is placed at a spatial distance equal to or greater than 5 times a mean free path of gas molecules in a vacuum chamber 1 from a boundary of plasma.
摘要翻译：本发明提高了对与长期连续稳定操作兼容的等离子体处理装置的待处理样品的表面上的蚀刻量或残留蚀刻量的监测的灵敏度（精度）的提高。检测来自待处理样品3的表面的反射光的波长和每个波长的光强度变化的光导入部分的透明体端面设置在等于或大于5倍的空间距离在真空室1中从等离子体边界的气体分子的平均自由程。

6. 发明授权

US08197634B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08197634B2
公开(公告)日：2012-06-12
申请号：US11848262
申请日：2007-08-31
申请人： Kenetsu Yokogawa , Tatehito Usui
发明人： Kenetsu Yokogawa , Tatehito Usui
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/32972 , H01J37/32935
摘要： An arrangement is provided for suppressing interference phenomenon on the surface of a sample that deteriorates the detection accuracy upon detecting the time variation of plasma conditions such as plasma space distribution or the processing status of the sample. For example, light scattering element for diffusing and transmitting incident light and a convex lens are arranged on a front stage of an optical fiber light receiving unit connected to a photodetector disposed on an opposite side from the sample for observing the emission of plasma. This serves to prevent the changes in light quantity accompanying the interference effect caused by the changes in thin film thickness on the surface of the sample from reaching the photodetector. An arrangement is also provided to prevent the light scattering element from being directly exposed to the plasma to prevent alteration of the light scattering element.
摘要翻译：提供了一种用于抑制样品表面上的干扰现象的装置，其在检测等离子体状态如等离子体空间分布或样品的处理状态的时间变化时使检测精度降低。例如，用于扩散和透射入射光的光散射元件和凸透镜布置在光纤光接收单元的前级，该光纤接收单元连接到设置在与用于观察等离子体的发射的样品相反的一侧的光电检测器。这用于防止伴随由样品表面上的薄膜厚度的变化引起的干涉效应的光量的变化到达光电检测器。还提供了一种布置，以防止光散射元件直接暴露于等离子体以防止光散射元件的改变。

7. 发明授权

US08083888B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08083888B2
公开(公告)日：2011-12-27
申请号：US12041741
申请日：2008-03-04
申请人： Tatehito Usui , Tsuyoshi Yoshida , Tsuyoshi Matsumoto , Satoru Muto , Kenetsu Yokogawa
发明人： Tatehito Usui , Tsuyoshi Yoshida , Tsuyoshi Matsumoto , Satoru Muto , Kenetsu Yokogawa
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01J37/32972 , G01N21/68 , H01J37/32091 , H01J37/32935
摘要： The invention provides a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously realize long life and ensure sufficient light to be received via a light transmitting unit, to enable long term stable operation and to improve the processing accuracy via accurate etching quantity detection. In a plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light transmitting unit composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained by the light transmitting unit, wherein the end surface of the light transmitting unit through which light is entered is arranged at a distance of five times or greater of the mean free path of gas molecules within the vacuum reactor from the end surface of the shower plate facing the plasma.
摘要翻译：本发明提供了一种用于测量被处理材料的蚀刻量的等离子体处理装置，并且利用正在处理的样品表面上的光学干涉来检测蚀刻终点，以同时实现长寿命并确保足够的光被接收通过光发射单元，能够进行长期稳定的操作，并通过精确的蚀刻量检测来提高加工精度。在用于通过在淋浴板和下部电极之间产生等离子体来处理被处理样品的等离子体处理装置中，用于检测经由淋浴板处理的样品的表面的光的检测器包括：光导体，进入光的分光器和用于分析由光发射单元获得的光的分光镜，其中进入光的光透射单元的端面布置在气体的平均自由程的五倍或更大的距离真空反应器内的分子从淋浴板的端面朝向等离子体。

8. 发明授权

US08496781B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08496781B2
公开(公告)日：2013-07-30
申请号：US11182793
申请日：2005-07-18
申请人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
发明人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/32082
摘要： The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation. The plasma processing apparatus according to the invention is based upon the dry etching apparatus having parallel plate structure and is characterized in that a low-pass filter having high impedance to a frequency of a high frequency power source for generating discharge, having small resistance to direct current and grounded is connected to an electrode for generating discharge which is arranged in a position opposite to the work piece and to which the high frequency power source for generating discharge is connected or a low-pass filter having small resistance to direct current and grounded and a direct-current power source connected in series with it are connected to the electrode for generating discharge.
摘要翻译：本发明提供了一种基于干蚀刻装置的等离子体处理装置，其可以抑制由溅射引起的工件对真空室的壁的污染，异物的发生，运行成本的增加更换真空室的壁和操作速度的恶化。根据本发明的等离子体处理装置基于具有平行板结构的干式蚀刻装置，其特征在于，具有高阻抗频率的低通滤波器，用于产生放电的高频电源的频率，具有较小的直接阻抗电流和接地连接到用于产生放电的电极，其布置在与工件相对的位置，并且用于产生放电的高频电源被连接到该电极上，或者具有对直流电阻和接地电阻小的低通滤波器，与其串联连接的直流电源连接到用于产生放电的电极。

9. 发明授权

US08029874B2 Plasma processing apparatus and method for venting the same to atmosphere 有权
标题翻译：等离子体处理装置和方法，用于将其排放到大气中
公开(公告)号：US08029874B2
公开(公告)日：2011-10-04
申请号：US12035759
申请日：2008-02-22
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H05H1/24
CPC分类号： C23C16/4401
摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
摘要翻译：在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径，并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得淋浴板的背侧的压力成为压力这是相对于处理室中的压力的正压力并且小于喷淋板的耐受压力。

10. 发明申请

US20080210376A1 PLASMA PROCESSING APPARATUS CAPABLE OF CONTROLLING PLASMA EMISSION INTENSITY 失效
标题翻译：能够控制等离子体排放强度的等离子体处理装置
公开(公告)号：US20080210376A1
公开(公告)日：2008-09-04
申请号：US12105018
申请日：2008-04-17
申请人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
发明人： Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/02 , C23C16/513
CPC分类号： H01J37/32935 , H01J37/32082 , H01J2237/3341
摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
摘要翻译：具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式