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    • 2. 发明申请
    • Pattern Dimension Measurement Method Using Electron Microscope, Pattern Dimension Measurement System, and Method for Monitoring Changes in Electron Microscope Equipment Over Time
    • 使用电子显微镜的图案尺寸测量方法,图案尺寸测量系统以及随时间监测电子显微镜设备变化的方法
    • US20130166240A1
    • 2013-06-27
    • US13807281
    • 2011-05-20
    • Chie ShishidoMaki TanakaKatsuhiro Sasada
    • Chie ShishidoMaki TanakaKatsuhiro Sasada
    • G01Q40/00
    • G01B15/04G01Q40/00H01J37/263H01J37/28H01J2237/22H01J2237/24514H01J2237/24578H01J2237/2823H01J2237/2826
    • Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.
    • 之前,测量每个临界尺寸SEM的器件特征图案,通过模型基本库(MBL)匹配系统推测进行尺寸测量的物体的截面形状,通过SEM模拟产生信号波形来进行尺寸测量 输入推定的截面形状和装置特性参数,将尺寸测量结果的差异作为机器差异进行登记。 在实际测量中,从每个临界尺寸SEM的尺寸测量结果可以看出,通过减去注册的机器差异来校正机器差异。 此外,通过周期性地测量上述器件特性参数并预测上述尺寸测量结果来监测临界尺寸SEM随时间变化的变化。 根据本发明,需要相当多的时间和精力的机器差异的实际测量是不必要的。 另外,随着时间的推移,随着时间的推移,随着时间的推移,随着时间的推移,样品随着时间变化的变化也受到影响。
    • 6. 发明授权
    • Method and apparatus for measuring shape of a specimen
    • 用于测量样品形状的方法和装置
    • US07889908B2
    • 2011-02-15
    • US11335515
    • 2006-01-20
    • Atsushi MiyamotoMaki TanakaHidetoshi Morokuma
    • Atsushi MiyamotoMaki TanakaHidetoshi Morokuma
    • G06K9/00A61N5/00G06G5/00
    • H01J37/28H01J37/222H01J2237/226H01J2237/2611
    • In the past, when a shape was corrected by adjusting parameters of a shape calculating equation proper for a measuring method used in measuring a two-dimensional or three-dimensional shape by correlating the parameters and a shape index value, the degree of freedom of modifying a shape by correction depended on a model equation used in the calculation of the shape, and therefore such a shape correction method was unsuitable for objects of correction having a number of shape variations. According to the present invention, the three-dimensional shape is corrected by fitting a curvature equation to a three-dimensional shape of a semiconductor pattern measured by any three-dimensional shape measuring method and by adjusting parameters of the curvature equation based on a shape index value separately calculated. The relations between the shape index value and the parameters are stored in a data base, and at the time of measurement the measured shapes are corrected based on the relations mentioned above.
    • 过去,当通过对参数和形状指标值进行关联来调整用于测量二维或三维形状的测量方法的形状计算方程的参数来校正形状时,修改自由度 通过校正的形状取决于在形状计算中使用的模型方程,因此这种形状校正方法不适合具有多个形状变化的校正对象。 根据本发明,通过将曲率方程拟合为通过任何三维形状测量方法测量的半导体图案的三维形状并且通过基于形状指数调整曲率方程的参数来校正三维形状 价值分别计算。 形状指标值与参数之间的关系存储在数据库中,在测量时,根据上述关系校正测量的形状。
    • 10. 发明授权
    • Method of measuring dimensions of pattern
    • 测量图案尺寸的方法
    • US07335881B2
    • 2008-02-26
    • US11019995
    • 2004-12-23
    • Maki TanakaChie ShishidoYuji Takagi
    • Maki TanakaChie ShishidoYuji Takagi
    • H01L21/02G01B15/00
    • G01N23/2251
    • With complexity of a process, the setting of conditions for pattern measurement by an SEM image falls into difficulties. However, the present invention aims to realize the setting of easy and reliable measuring conditions even with respect to a pattern complex in structure. Points characterized in terms of an SEM image signal are calculated as candidates for measurement values. The calculated candidates for measurement values are displayed with being superimposed on the SEM image. An operator selects the optimum one from the displayed candidates and thereby determines the optimum image processing condition for measurement. The relationship between the result of measurement under a predetermined image processing condition and pattern portions has been made clear using model data of a sectional shape and an electron beam simulation image.
    • 由于处理的复杂性,通过SEM图像进行图案测定的条件的设定变得困难。 然而,本发明的目的在于即使对于结构上的图案复合体也能实现容易且可靠的测量条件的设定。 以SEM图像信号为特征的点被计算为测量值的候选。 计算出的测量值候选被叠加在SEM图像上。 操作者从所显示的候选者中选择最佳值,从而确定用于测量的最佳图像处理条件。 使用截面形状和电子束模拟图像的模型数据,在预定图像处理条件下的测量结果与图案部分之间的关​​系已经被清楚。