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1. 发明申请

US20130166240A1 Pattern Dimension Measurement Method Using Electron Microscope, Pattern Dimension Measurement System, and Method for Monitoring Changes in Electron Microscope Equipment Over Time 有权
标题翻译：使用电子显微镜的图案尺寸测量方法，图案尺寸测量系统以及随时间监测电子显微镜设备变化的方法
公开(公告)号：US20130166240A1
公开(公告)日：2013-06-27
申请号：US13807281
申请日：2011-05-20
申请人： Chie Shishido , Maki Tanaka , Katsuhiro Sasada
发明人： Chie Shishido , Maki Tanaka , Katsuhiro Sasada
IPC分类号： G01Q40/00
CPC分类号： G01B15/04 , G01Q40/00 , H01J37/263 , H01J37/28 , H01J2237/22 , H01J2237/24514 , H01J2237/24578 , H01J2237/2823 , H01J2237/2826
摘要： Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.
摘要翻译：之前，测量每个临界尺寸SEM的器件特征图案，通过模型基本库（MBL）匹配系统推测进行尺寸测量的物体的截面形状，通过SEM模拟产生信号波形来进行尺寸测量输入推定的截面形状和装置特性参数，将尺寸测量结果的差异作为机器差异进行登记。在实际测量中，从每个临界尺寸SEM的尺寸测量结果可以看出，通过减去注册的机器差异来校正机器差异。此外，通过周期性地测量上述器件特性参数并预测上述尺寸测量结果来监测临界尺寸SEM随时间变化的变化。根据本发明，需要相当多的时间和精力的机器差异的实际测量是不必要的。另外，随着时间的推移，随着时间的推移，随着时间的推移，随着时间的推移，样品随着时间变化的变化也受到影响。

2. 发明授权

US09671223B2 Pattern dimension measurement method using electron microscope, pattern dimension measurement system, and method for monitoring changes in electron microscope equipment over time 有权
公开(公告)号：US09671223B2
公开(公告)日：2017-06-06
申请号：US13807281
申请日：2011-05-20
申请人： Chie Shishido , Maki Tanaka , Katsuhiro Sasada
发明人： Chie Shishido , Maki Tanaka , Katsuhiro Sasada
IPC分类号： G01B15/04 , G01Q40/00 , H01J37/26 , H01J37/28
CPC分类号： G01B15/04 , G01Q40/00 , H01J37/263 , H01J37/28 , H01J2237/22 , H01J2237/24514 , H01J2237/24578 , H01J2237/2823 , H01J2237/2826
摘要： Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.

3. 发明授权

US07894658B2 Pattern inspection method and apparatus 有权
标题翻译：图案检验方法及装置
公开(公告)号：US07894658B2
公开(公告)日：2011-02-22
申请号：US11931693
申请日：2007-10-31
申请人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
发明人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/956 , G01N2021/8854 , G01N2021/8861 , G01N2021/8864 , G01R31/311 , G03F1/86 , G06T1/0007 , G06T7/0002 , G06T7/001 , G06T2200/24 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/28
摘要： An apparatus for processing a defect candidate image, including: an imager for taking an enlarged image of a specimen; an image processor for processing the image taken by the imager to detect defect candidates existing on the specimen and classify the detected defect candidates into one of plural defect classes; a memory for storing information of the defect candidates including the images of the defect candidates and the classified defect class data outputted from the image processor; and a display unit having a display screen for displaying information stored in the memory, wherein the display unit displays an image of the defect candidates together with the defect class data stored in the memory and the displayed defect class data is changeable on the display screen, and the memory changes the stored defect class data of the displayed defect candidate to the changed defect class data.
摘要翻译：一种用于处理缺陷候选图像的装置，包括：用于拍摄样本的放大图像的成像器; 图像处理器，用于处理由成像器拍摄的图像以检测存在于样本上的缺陷候选，并将检测到的缺陷候选分类为多个缺陷类别中的一个; 存储器，用于存储包括缺陷候选图像和从图像处理器输出的分类缺陷类别数据的缺陷候选的信息; 以及显示单元，具有用于显示存储在存储器中的信息的显示屏幕，其中所述显示单元与存储在所述存储器中的缺陷类别数据一起显示所述缺陷候选的图像，并且所显示的缺陷类别数据可在所述显示屏幕上变化，并且存储器将存储的缺陷候选的缺陷类别数据改变为改变的缺陷类别数据。

4. 发明申请

US20090212212A1 Scanning Electron Microscope system and Method for Measuring Dimensions of Patterns Formed on Semiconductor Device By Using the System 有权
标题翻译：扫描电子显微镜系统和通过使用系统测量在半导体器件上形成的图案尺寸的方法
公开(公告)号：US20090212212A1
公开(公告)日：2009-08-27
申请号：US12370870
申请日：2009-02-13
申请人： Chie Shishido , Maki Tanaka , Atsushi Miyamoto
发明人： Chie Shishido , Maki Tanaka , Atsushi Miyamoto
IPC分类号： G01N23/00
CPC分类号： G03F1/84 , G03F1/86 , G03F7/70625
摘要： The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.
摘要翻译：本发明提供一种扫描电子显微镜系统，其适于输出与样品的实际图案边缘端相匹配的轮廓信息，并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形到扫描电子显微镜图像的图案边缘的每个点处的图案边缘，通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状将横截面形状与电子束信号波形相关联，以横截面形状获得边缘端配件的位置坐标，并将图案的轮廓作为位置坐标的范围输出。

5. 发明授权

US07457453B2 Pattern inspection method and apparatus 有权
标题翻译：图案检验方法及装置
公开(公告)号：US07457453B2
公开(公告)日：2008-11-25
申请号：US11782274
申请日：2007-07-24
申请人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
发明人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/956 , G01N2021/8854 , G01N2021/8861 , G01N2021/8864 , G01R31/311 , G03F1/86 , G06T1/0007 , G06T7/0002 , G06T7/001 , G06T2200/24 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/28
摘要： A pattern inspection apparatus including: an image detecting part for detecting a digital image of an object substrate; a display having a screen on which the digital image of the object substrate and/or a distribution of defect candidates in a map form are displayable; an input device for inputting information of a non-inspection region to be masked on the object substrate by defining a region on the screen on which said distribution of defect candidates is displayed in a map form; a memory part for storing coordinate data, pattern data or feature quantity data of the non-inspection region to be masked on the object substrate inputted on the screen by the input device; and a defect judging part in which the digital image detected by the image detecting part is examined in a state that a region matching with a condition stored in the memory part is masked and a defect is detected in a region other than said masked region.
摘要翻译：一种图案检查装置，包括：图像检测部，用于检测对象基板的数字图像; 具有可以显示对象基板的数字图像的屏幕和/或以地图形式的缺陷候选的分布的显示器; 输入装置，用于通过在屏幕上定义要以掩模形式显示所述缺陷候选的分布的区域来输入要被掩蔽在对象基板上的不检查区域的信息; 用于存储由输入装置输入到屏幕上的待掩蔽的待检查区域的坐标数据，图案数据或特征量数据的存储部分; 以及缺陷判断部分，其中在与存储在存储器部分中的条件匹配的区域被屏蔽并且在除了所述屏蔽区域之外的区域中检测到缺陷的状态下，检查由图像检测部分检测到的数字图像。

6. 发明授权

US07335881B2 Method of measuring dimensions of pattern 有权
标题翻译：测量图案尺寸的方法
公开(公告)号：US07335881B2
公开(公告)日：2008-02-26
申请号：US11019995
申请日：2004-12-23
申请人： Maki Tanaka , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Chie Shishido , Yuji Takagi
IPC分类号： H01L21/02 , G01B15/00
CPC分类号： G01N23/2251
摘要： With complexity of a process, the setting of conditions for pattern measurement by an SEM image falls into difficulties. However, the present invention aims to realize the setting of easy and reliable measuring conditions even with respect to a pattern complex in structure. Points characterized in terms of an SEM image signal are calculated as candidates for measurement values. The calculated candidates for measurement values are displayed with being superimposed on the SEM image. An operator selects the optimum one from the displayed candidates and thereby determines the optimum image processing condition for measurement. The relationship between the result of measurement under a predetermined image processing condition and pattern portions has been made clear using model data of a sectional shape and an electron beam simulation image.
摘要翻译：由于处理的复杂性，通过SEM图像进行图案测定的条件的设定变得困难。然而，本发明的目的在于即使对于结构上的图案复合体也能实现容易且可靠的测量条件的设定。以SEM图像信号为特征的点被计算为测量值的候选。计算出的测量值候选被叠加在SEM图像上。操作者从所显示的候选者中选择最佳值，从而确定用于测量的最佳图像处理条件。使用截面形状和电子束模拟图像的模型数据，在预定图像处理条件下的测量结果与图案部分之间的关系已经被清楚。

7. 发明授权

US07266235B2 Pattern inspection method and apparatus 有权
标题翻译：图案检验方法及装置
公开(公告)号：US07266235B2
公开(公告)日：2007-09-04
申请号：US09986577
申请日：2001-11-09
申请人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
发明人： Takashi Hiroi , Masahiro Watanabe , Chie Shishido , Aritoshi Sugimoto , Maki Tanaka , Hiroshi Miyai , Asahiro Kuni , Yasuhiko Nara
IPC分类号： G60K9/00
CPC分类号： G01N21/9501 , G01N21/956 , G01N2021/8854 , G01N2021/8861 , G01N2021/8864 , G01R31/311 , G03F1/86 , G06T1/0007 , G06T7/0002 , G06T7/001 , G06T2200/24 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/28
摘要： A pattern inspection method in which an image can be detected without an image detection error caused by an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/non-connection, and pattern edge formation. A digital image of an object substrate is attained through microscopic observation thereof, the attained digital image is examined to detect defects, while masking a region pre-registered in terms of coordinates, or while masking a pattern meeting a pre-registered pattern, and an image of each of the defects thus detected is displayed. Further, each of the defects detected using the digital image attained through microscopic observation is checked to determine whether its feature meets a pre-registered feature or not. Defects having a feature that meets the pre-registered feature are so displayed that they can be turned on/off, or they are so displayed as to be distinguishable from the other defects.
摘要翻译：图案检查方法，其中可以检测图像，而不会由于植入在晶片中的离子，图案连接/非连接和图案边缘形成等因素所引起的不利影响而引起图像检测误差。通过显微镜观察目标基板的数字图像，检查所获得的数字图像以检测缺陷，同时掩蔽预先登记的区域上的坐标，或者在掩蔽满足预先注册的图案的图案的同时，显示由此检测到的每个缺陷的图像。此外，检查使用通过显微镜观察获得的数字图像检测到的每个缺陷，以确定其特征是否满足预先注册的特征。具有满足预注册特征的特征的缺陷被显示为可以打开/关闭，或者它们被显示为与其他缺陷区分开。

8. 发明授权

US07230239B2 Apparatus for inspecting three dimensional shape of a specimen and method of watching an etching process using the same 有权
标题翻译：用于检查样本的三维形状的装置和使用其的观察蚀刻工艺的方法
公开(公告)号：US07230239B2
公开(公告)日：2007-06-12
申请号：US10918381
申请日：2004-08-16
申请人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G06T7/0004 , G01N23/225 , G01N2223/6116 , G06T2207/30148 , H01J2237/2814 , H01L22/12
摘要： A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a variation of the signal quantity. The size of the divided regions is used for quantitative evaluation of a three dimensional shape of the specimen. This system, especially by displaying measurement results of the pattern shape for each divided signal waveform (bottom width in the final shape, resist bottom width, etching shift quantity, and etching slope-angle component by the exposure), permits an easy check on which a component varies and how the component varies in all shape variations. With this arrangement, a pattern cross section information effective in determining etching process conditions can be acquired using images by an in-line SEM capable of nondestructive observation.
摘要翻译：用于检查图案形状的系统用于通过照射聚焦电子束来检测来自样品的二次电子，并对该检测信号进行运算处理。检测信号波形根据信号量的变化被分成多个区域。分割区域的大小用于样本的三维形状的定量评估。该系统特别是通过显示每个分割信号波形（最终形状的底部宽度，抗蚀剂底部宽度，蚀刻偏移量和通过曝光的蚀刻倾斜角度分量）的图案形状的测量结果，可以容易地检查哪个一个组件变化，以及组件在所有形状变化中的变化。通过这种布置，可以通过能够进行非破坏性观察的直列SEM的图像来获取有效确定蚀刻工艺条件的图案横截面信息。

9. 发明授权

US07216311B2 System and method for evaluating a semiconductor device pattern, method for controlling process of forming a semiconductor device pattern and method for monitoring a semiconductor device manufacturing process 有权
标题翻译：用于评估半导体器件图案的系统和方法，用于控制形成半导体器件图案的工艺的方法和用于监测半导体器件制造工艺的方法
公开(公告)号：US07216311B2
公开(公告)日：2007-05-08
申请号：US10648231
申请日：2003-08-27
申请人： Maki Tanaka , Chie Shishido , Ryo Nakagaki , Yuji Takagi
发明人： Maki Tanaka , Chie Shishido , Ryo Nakagaki , Yuji Takagi
IPC分类号： G06F17/50 , G06F9/45 , G01N23/00
CPC分类号： H01L22/20 , G11C29/006 , G11C2029/0403 , G11C2029/5002 , H01L2924/0002 , H01L2924/00
摘要： In order to realize a means for acquiring three-dimensional shape information about patterns by nondestruction and evaluate a relationship between the three-dimensional shape information about these patterns and device properties, a semiconductor device pattern evaluating system is provided with a feature index calculating means for quantifying a property of a three-dimensional shape of a pattern to be evaluated, as feature index, a database that records therein a relationship between the feature index of each three-dimensional pattern shape and a device property of a circuit containing patterns each having the feature index, and a device property estimating means for estimating a property of a device circuit formed by the pattern to be evaluated, on the basis of the feature index of the three-dimensional pattern shape, which have been quantified by the feature index calculating means, and the information recorded in the database.
摘要翻译：为了实现用于通过非破坏获取关于图案的三维形状信息的手段，并且评估关于这些图案的三维形状信息和装置特性之间的关系，半导体装置图案评估系统设置有特征指标计算装置，量化要评估的图案的三维形状的属性作为特征索引，记录其中每个三维图案形状的特征索引与包含各自具有所述三维图案形状的图案的电路的装置特性之间的关系的数据库特征索引，以及装置属性估计装置，用于根据由特征指标计算装置量化的三维图案形状的特征指标，估计由待评估图案形成的装置电路的特性，以及记录在数据库中的信息。

10. 发明授权

US07173268B2 Method of measuring pattern dimension and method of controlling semiconductor device process 有权
标题翻译：测量图案尺寸的方法和半导体器件工艺的控制方法
公开(公告)号：US07173268B2
公开(公告)日：2007-02-06
申请号：US10986910
申请日：2004-11-15
申请人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
发明人： Maki Tanaka , Hidetoshi Morokuma , Chie Shishido , Yuji Takagi
IPC分类号： G01N21/86
CPC分类号： H01J37/28 , H01J37/304 , H01J2237/2814 , H01J2237/2817 , H01J2237/30455
摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.
摘要翻译：本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差，从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。

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