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1. 发明授权

US07087356B2 193nm resist with improved post-exposure properties 失效
标题翻译： 193nm抗蚀剂，具有改善的曝光后特性
公开(公告)号：US07087356B2
公开(公告)日：2006-08-08
申请号：US10261249
申请日：2002-09-30
申请人： Mahmoud H. Khojasteh , Kuang-Jung Chen , Pushkara Rao Varanasi , Yukio Nishimura , Eiichi Kobayashi
发明人： Mahmoud H. Khojasteh , Kuang-Jung Chen , Pushkara Rao Varanasi , Yukio Nishimura , Eiichi Kobayashi
IPC分类号： G03C1/73 , G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.
摘要翻译：可以通过193nm辐射和/或可能的其它辐射成像并且可显影以形成改进的显影特性和改善的耐蚀刻性的抗蚀剂结构的酸催化的正性抗蚀剂组合物是通过使用含有成像聚合物组分的抗蚀剂组合物来实现的，具有具有含有远离酸不稳定部分的侧基的单体单元的敏感性聚合物。

2. 发明授权

US07521169B2 Radiation-sensitive resin composition 有权
标题翻译：辐射敏感树脂组合物
公开(公告)号：US07521169B2
公开(公告)日：2009-04-21
申请号：US10533223
申请日：2003-10-23
申请人： Yukio Nishimura , Hiroyuki Ishii , Isao Nishimura , Eiichi Kobayashi
发明人： Yukio Nishimura , Hiroyuki Ishii , Isao Nishimura , Eiichi Kobayashi
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/114
摘要： A radiation-sensitive resin composition suitable as a chemically-amplified resist useful for microfabrication utilizing various types of radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser. The radiation-sensitive resin composition of the present invention comprises: (A) a resin comprising a recurring unit (1-1) shown by the following formula (I-1) and (B) a radiation-sensitive acid generator such as 1-(4-n-butoxynaphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition may further comprise (C) an acid diffusion controller such as phenylbenzimidazole
摘要翻译：适用于利用KrF准分子激光器或ArF准分子激光器表示的各种类型的辐射如深紫外线的用于微细加工的化学放大型抗蚀剂的辐射敏感性树脂组合物。本发明的辐射敏感性树脂组合物包含：（A）包含下式（I-1）所示的重复单元（1-1）和（B）的辐照敏感性酸产生剂的树脂，（4-正丁氧基萘基）四氢噻吩六氟正丁磺酸盐。辐射敏感性树脂组合物还可以包含（C）酸扩散控制剂如苯基苯并咪唑

3. 发明授权

US07638261B2 Radiation-sensitive resin composition 有权
标题翻译：辐射敏感树脂组合物
公开(公告)号：US07638261B2
公开(公告)日：2009-12-29
申请号：US12348171
申请日：2009-01-02
申请人： Yukio Nishimura , Hiroyuki Ishii , Isao Nishimura , Eiichi Kobayashi
发明人： Yukio Nishimura , Hiroyuki Ishii , Isao Nishimura , Eiichi Kobayashi
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/114
摘要： A radiation-sensitive resin composition suitable as a chemically-amplified resist useful for microfabrication utilizing various types of radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser. The radiation-sensitive resin composition of the present invention comprises: (A) a resin comprising a recurring unit (1-1) shown by the following formula (I-1) and (B) a radiation-sensitive acid generator such as 1-(4-n-butoxynaphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition may further comprise (C) an acid diffusion controller such as phenylbenzimidazole.
摘要翻译：适用于利用KrF准分子激光器或ArF准分子激光器表示的各种类型的辐射如深紫外线的用于微细加工的化学放大型抗蚀剂的辐射敏感性树脂组合物。本发明的辐射敏感性树脂组合物包含：（A）包含下式（I-1）所示的重复单元（1-1）和（B）的辐照敏感性酸产生剂的树脂，（4-正丁氧基萘基）四氢噻吩六氟正丁磺酸盐。辐射敏感性树脂组合物还可以包含（C）酸扩散控制剂如苯基苯并咪唑。

4. 发明申请

US20090148790A1 RADIATION-SENSITIVE RESIN COMPOSITION 有权
标题翻译：辐射敏感性树脂组合物
公开(公告)号：US20090148790A1
公开(公告)日：2009-06-11
申请号：US12348171
申请日：2009-01-02
申请人： Yukio Nishimura , Hiroyuki Ishii , Isao Nishimura , Eiichi Kobayashi
发明人： Yukio Nishimura , Hiroyuki Ishii , Isao Nishimura , Eiichi Kobayashi
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/114
摘要： A radiation-sensitive resin composition suitable as a chemically-amplified resist useful for microfabrication utilizing various types of radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser. The radiation-sensitive resin composition of the present invention comprises: (A) a resin comprising a recurring unit (1-1) shown by the following formula (I-1) and (B) a radiation-sensitive acid generator such as 1-(4-n-butoxynaphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition may further comprise (C) an acid diffusion controller such as phenylbenzimidazole.
摘要翻译：适用于利用KrF准分子激光器或ArF准分子激光器表示的各种类型的辐射如深紫外线的用于微细加工的化学放大型抗蚀剂的辐射敏感性树脂组合物。本发明的辐射敏感性树脂组合物包含：（A）包含下式（I-1）所示的重复单元（1-1）和（B）的辐照敏感性酸产生剂的树脂，（4-正丁氧基萘基）四氢噻吩六氟正丁磺酸盐。辐射敏感性树脂组合物还可以包含（C）酸扩散控制剂如苯基苯并咪唑。

5. 发明授权

US06677419B1 Preparation of copolymers 失效
标题翻译：共聚物的制备
公开(公告)号：US06677419B1
公开(公告)日：2004-01-13
申请号：US10293740
申请日：2002-11-13
申请人： Phillip J. Brock , Eiichi Kobayashi , Isao Nishimura , Yukio Nishimura , Thomas I. Wallow , Masafumi Yamamoto
发明人： Phillip J. Brock , Eiichi Kobayashi , Isao Nishimura , Yukio Nishimura , Thomas I. Wallow , Masafumi Yamamoto
IPC分类号： C08F1000
CPC分类号： C08F232/08 , C08F220/06 , C08F220/18 , C08F220/28
摘要： A scaleable and high-yielding method of preparing copolymers that is useful as a component of a radiation sensitive resin composition is provided. The method includes the step of reacting at least one monomer A which is an unsaturated alicyclic monomer and forms a polymer main chain by dissociation of the unsaturated bond, and at least one unsaturated monomer B, which also forms a polymer chain by dissociation of an unsaturated bond, wherein less than two electron-withdrawing groups are directly appended to said unsaturation, and where said monomer B is other than the unsaturated alicyclic monomer and forms a polymer main chain, in the presence of a free radical initiator. The reacting step is carried out in a stoichiometric excess of monomer A as compared to monomer B. By carrying out the reacting step in an excess of monomer A as compared to monomer B, the resultant copolymer will have a greater molar concentration of monomer A than is obtainable using other methods.
摘要翻译：提供了可用作辐射敏感性树脂组合物的组分的共聚物的可扩展和高产率的方法。所述方法包括使至少一种不饱和脂环族单体的单体A与不饱和键解离形成聚合物主链的至少一种不饱和单体B，其通过不饱和键解离形成聚合物链键，其中少于两个吸电子基团直接连接到所述不饱和基团上，并且其中所述单体B不同于不饱和脂环族单体并形成聚合物主链，在自由基引发剂存在下。与单体B相比，反应步骤在化学计量过量的单体A中进行。通过与单体B相比，通过进行过量单体A的反应步骤，所得共聚物将具有比单体A更大的摩尔浓度可以使用其他方法获得。

6. 发明授权

US06403288B1 Resist pattern formation method 有权
标题翻译：抗蚀图案形成方法
公开(公告)号：US06403288B1
公开(公告)日：2002-06-11
申请号：US09520345
申请日：2000-03-07
申请人： Yukio Nishimura , Toshiyuki Kai , Eiichi Kobayashi , Takeo Shioya
发明人： Yukio Nishimura , Toshiyuki Kai , Eiichi Kobayashi , Takeo Shioya
IPC分类号： G03F7039
CPC分类号： G03F7/30 , G03F7/0045 , Y10S430/115
摘要： A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 Å smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 Å smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 Å reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.
摘要翻译：从化学放大正射线敏感性树脂组合物形成抗蚀剂图案的方法。湿法显影后由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜的未曝光部分的膜厚比以前小100至400埃湿发展。或者，由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜在足以确保湿显影后抗蚀剂膜的未曝光部分的膜厚度比100至400小的温度和时间都被湿成型在湿显影之前的抗蚀剂膜是由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜，通过湿显影而经历100〜400的未曝光部分的膜厚度的降低作为形成抗蚀剂图案的抗蚀剂膜是有用的。

7. 发明申请

US20060234153A1 Radiation-sensitive resin composition 有权
公开(公告)号：US20060234153A1
公开(公告)日：2006-10-19
申请号：US10533223
申请日：2003-10-23
申请人： Yukio Nishimura , Hiroyuki Ishii , Isao Nishimura , Eiichi Kobayashi
发明人： Yukio Nishimura , Hiroyuki Ishii , Isao Nishimura , Eiichi Kobayashi
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/114
摘要： A radiation-sensitive resin composition suitable as a chemically-amplified resist useful for microfabrication utilizing various types of radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser. The radiation-sensitive resin composition of the present invention comprises: (A) a resin comprising a recurring unit (1-1) shown by the following formula (I-1) and (B) a radiation-sensitive acid generator such as 1-(4-n-butoxynaphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition may further comprise (C) an acid diffusion controller such as phenylbenzimidazole.

8. 发明授权

US06337171B1 Radiation-sensitive resin composition 有权
标题翻译：辐射敏感树脂组合物
公开(公告)号：US06337171B1
公开(公告)日：2002-01-08
申请号：US09435922
申请日：1999-11-08
申请人： Eiichi Kobayashi , Yukio Nishimura , Takeo Shioya
发明人： Eiichi Kobayashi , Yukio Nishimura , Takeo Shioya
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039 , G03F7/0392 , Y10S430/115
摘要： A radiation-sensitive resin composition comprising (A) resin which comprises a recurring unit (1) shown by the following formula (1) and either or both of a recurring unit (2) shown by the following formula (2) and a recurring unit (3) shown by the following formula (3), and (B) a photoacid generator shown by the following formula (4).
摘要翻译：一种辐射敏感性树脂组合物，其包含（A）树脂，其包含由下式（1）表示的重复单元（1）和由下式（2）表示的重复单元（2）和重复单元（3）表示的光致酸发生剂，（B）由下式（4）表示的光致酸产生剂。

9. 发明授权

US09598520B2 Radiation-sensitive resin composition, polymer and method for forming a resist pattern 有权
公开(公告)号：US09598520B2
公开(公告)日：2017-03-21
申请号：US13473957
申请日：2012-05-17
申请人： Yuko Kiridoshi , Takehiko Naruoka , Yukio Nishimura , Yusuke Asano , Takanori Kawakami , Hiromitsu Nakashima
发明人： Yuko Kiridoshi , Takehiko Naruoka , Yukio Nishimura , Yusuke Asano , Takanori Kawakami , Hiromitsu Nakashima
IPC分类号： G03F7/004 , G03F7/38 , C08F220/24 , C08F228/00 , C08F220/22 , C08L33/14 , G03F7/039 , G03F7/11 , G03F7/20
CPC分类号： C08F220/22 , C08F220/24 , C08F228/00 , C08L33/14 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , C08L101/00
摘要： A radiation-sensitive resin composition includes a first polymer, a second polymer and a radiation-sensitive acid generator. The first polymer has a structure unit represented by a following formula (1-1), a structure unit represented by a following formula (1-2), or both thereof, and has a content of fluorine atoms of no less than 5% by mass to a total mass of the first polymer. The second polymer has an acid-dissociable group, and has a content of fluorine atoms of less than 5% by mass to a total mass of the second polymer.

10. 发明授权

US08435718B2 Upper layer-forming composition and photoresist patterning method 有权
标题翻译：上层形成组合物和光致抗蚀剂图案化方法
公开(公告)号：US08435718B2
公开(公告)日：2013-05-07
申请号：US13272501
申请日：2011-10-13
申请人： Atsushi Nakamura , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
发明人： Atsushi Nakamura , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
IPC分类号： G03F7/00 , G03F7/004 , G03F7/11 , G03F7/40
CPC分类号： G03F7/11 , C08F220/18 , C08F220/30 , G03F7/0046 , G03F7/2041
摘要： An upper layer-forming composition includes a resin, and a solvent. The resin is dissolvable in a developer for a photoresist film which is to be covered by the upper layer-forming composition to form a pattern by exposure to radiation. The solvent dissolves the resin in the solvent. The solvent includes a compound shown by a formula (1). Each of R1 and R2 independently represents a hydrocarbon group having 1 to 8 carbon atoms or a halogenated hydrocarbon group. R1—O—R2 (1)
摘要翻译：上层形成组合物包括树脂和溶剂。该树脂可溶于用于由上层形成组合物覆盖以形成通过辐射照射的图案的光致抗蚀剂膜的显影剂。溶剂溶解在溶剂中的树脂。溶剂包括由式（1）表示的化合物。 R 1和R 2各自独立地表示碳原子数1〜8的烃基或卤代烃基。 R1-O-R2（1）

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