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1. 发明授权

US06228246B1 Removal of metal skin from a copper-Invar-copper laminate 失效
标题翻译：从铜Inv铜层压板去除金属表皮
公开(公告)号：US06228246B1
公开(公告)日：2001-05-08
申请号：US09347581
申请日：1999-07-01
申请人： Madhav Datta , Raymond T. Galasco , Lawrence P. Lehman , Roy H. Magnuson , Robin A. Susko , Robert D. Topa
发明人： Madhav Datta , Raymond T. Galasco , Lawrence P. Lehman , Roy H. Magnuson , Robin A. Susko , Robert D. Topa
IPC分类号： C25F300
CPC分类号： H05K3/44 , C25F3/00 , H05K3/07 , H05K2201/0338 , H05K2201/0347 , H05K2203/0285 , H05K2203/0361
摘要： A method of removing a metal skin from a through-hole surface of a copper-Invar-copper (CIC) laminate without causing differential etchback of the laminate. The metal skin includes debris deposited on the through-hole surface as the through hole is being formed by laser or mechanical drilling of a substrate that includes the laminate as an inner plane. Removing the metal skin combines electrochemical polishing (ECP) with ultrasonics. ECP dissolves the metal skin in an acid solution, while ultrasonics agitates and circulates the acid solution to sweep the metal skin out of the through hole. ECP is activated when a pulse power supply is turned on and generates a periodic voltage pulse from a pulse power supply whose positive terminal is coupled to the laminate and whose negative terminal is coupled to a conductive cathode. After the metal skin is removed, the laminate is differentially etched such that the copper is etched at a faster rate than the Invar. To prevent the differential etching, a copper layer is formed on a surface of the substrate with an electrical resistance R1 between the copper layer and the positive terminal of the pulse power supply. Additionally, an electrical resistance R2 is formed between the laminate and the positive terminal of the pulse power supply. Adjustment of R1 and R2 controls the relative etch rates of the copper and the Invar.
摘要翻译：从铜 - 堇青铜（CIC）层压板的通孔表面去除金属表皮而不会引起层压板的不均匀回蚀的方法。金属皮肤包括沉积在通孔表面上的碎屑，因为通孔是通过激光或机械钻孔形成的，所述基底包括层压体作为内平面。去除金属皮肤结合电化学抛光（ECP）与超声波。 ECP将金属皮肤溶解在酸性溶液中，同时超声波搅拌并循环酸溶液以将金属皮肤从通孔中扫出。当脉冲电源接通时，ECP被激活，并从脉冲电源产生周期性的电压脉冲，该脉冲电源的正极端子耦合到层压板并且其负极端子连接到导电阴极。在去除金属表皮之后，层压体被差异蚀刻，使得以比Invar更快的速度蚀刻铜。为了防止差分蚀刻，在衬底的表面上在铜层和脉冲电源的正端之间具有电阻R1形成铜层。此外，在层压体和脉冲电源的正极端之间形成电阻R2。 R1和R2的调整控制铜和殷钢的相对蚀刻速率。

2. 发明授权

US08952550B2 Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same 有权
公开(公告)号：US08952550B2
公开(公告)日：2015-02-10
申请号：US12655975
申请日：2010-01-12
申请人： Madhav Datta , Dave Emory , Subhash M. Joshi , Susanne Menezes , Doowon Suh
发明人： Madhav Datta , Dave Emory , Subhash M. Joshi , Susanne Menezes , Doowon Suh
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05647 , H01L2224/10126 , H01L2224/11009 , H01L2224/1147 , H01L2224/1148 , H01L2224/11849 , H01L2224/11901 , H01L2224/11912 , H01L2224/13023 , H01L2224/13099 , H01L2224/13111 , H01L2224/13116 , H01L2224/13147 , H01L2224/13166 , H01L2924/0002 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2224/05552
摘要： The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

3. 发明授权

US08299604B2 Bonded metal and ceramic plates for thermal management of optical and electronic devices 有权
标题翻译：粘合金属和陶瓷板用于光学和电子设备的热管理
公开(公告)号：US08299604B2
公开(公告)日：2012-10-30
申请号：US12536402
申请日：2009-08-05
申请人： Madhav Datta , Mark McMaster
发明人： Madhav Datta , Mark McMaster
IPC分类号： B32B3/00 , B32B15/04
CPC分类号： F28F7/02 , C04B37/026 , C04B2237/12 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/127 , C04B2237/34 , C04B2237/343 , C04B2237/366 , C04B2237/40 , C04B2237/403 , C04B2237/405 , C04B2237/407 , C04B2237/408 , C04B2237/592 , C04B2237/62 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/72 , C04B2237/74 , H01L23/3735 , H01L2924/0002 , H05K1/0203 , H05K1/0207 , H05K1/0272 , H05K1/0306 , H05K3/0061 , H05K3/38 , H05K3/4629 , H05K3/4641 , H05K2201/0355 , H05K2201/064 , Y10T428/24612 , Y10T428/31678 , H01L2924/00
摘要： A ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. The ceramic assembly includes a ceramic layer to provide this electrical isolation. The ceramic layer has high thermal conductivity and high electrical resistivity. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer. The top conductive layer and the joining layer are etched to form the electrically isolated conductive pads. The conductive layers are bonded to the ceramic layer using a bare ceramic approach or a metallized ceramic approach.
摘要翻译：陶瓷组件包括一个或多个热耦合到发热装置的导电和导热焊盘，每个导电焊盘彼此电隔离。陶瓷组件包括提供该电隔离的陶瓷层。陶瓷层具有高导热性和高电阻率。使用中间接合材料，陶瓷层的顶表面和底表面各自与导电层（例如铜）接合。执行钎焊工艺以通过接合层将陶瓷层粘合到导电层。接合层是接合材料，陶瓷层和导电层的复合物。蚀刻顶部导电层和接合层以形成电隔离的导电焊盘。使用裸陶瓷方法或金属化陶瓷方法将导电层结合到陶瓷层。

4. 发明申请

US20110073292A1 FABRICATION OF HIGH SURFACE AREA, HIGH ASPECT RATIO MINI-CHANNELS AND THEIR APPLICATION IN LIQUID COOLING SYSTEMS 审中-公开
标题翻译：高表面积，高比例微通道的制造及其在液体冷却系统中的应用
公开(公告)号：US20110073292A1
公开(公告)日：2011-03-31
申请号：US12571265
申请日：2009-09-30
申请人： Madhav Datta , Peng Zhou , Hae-won Choi , Brandon Leong , Mark McMaster , Douglas E. Werner
发明人： Madhav Datta , Peng Zhou , Hae-won Choi , Brandon Leong , Mark McMaster , Douglas E. Werner
IPC分类号： F28F9/00 , F28F9/24 , B21D53/02
CPC分类号： F28F1/40 , F28F3/02 , F28F2260/02 , F28F2275/04 , H01L23/473 , H01L2924/0002 , Y10T29/4935 , H01L2924/00
摘要： The present invention provides methods and apparatuses which achieve high heat transfer in a fluid cooling system, and which do so with a small pressure drop across the system. The present invention teaches the use of wall features on the fins of a heat exchanger to cool fluid in a fluid cooling system. The present invention also discloses high aspect ratio, high surface area structures applicable in micro-heat exchangers for fluid cooling systems and cost effective methods for manufacturing the same.
摘要翻译：本发明提供了在流体冷却系统中实现高热传递的方法和装置，并且在整个系统上具有小的压降。本发明教导了在热交换器的翅片上使用壁特征来冷却流体冷却系统中的流体。本发明还公开了可用于流体冷却系统的微型热交换器的高纵横比，高表面积结构和其制造成本有效的方法。

5. 发明申请

US20100035024A1 BONDED METAL AND CERAMIC PLATES FOR THERMAL MANAGEMENT OF OPTICAL AND ELECTRONIC DEVICES 有权
标题翻译：粘合金属和陶瓷板用于光学和电子设备的热管理
公开(公告)号：US20100035024A1
公开(公告)日：2010-02-11
申请号：US12536402
申请日：2009-08-05
申请人： Madhav Datta , Mark McMaster
发明人： Madhav Datta , Mark McMaster
IPC分类号： B32B3/00 , B32B15/04
CPC分类号： F28F7/02 , C04B37/026 , C04B2237/12 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/127 , C04B2237/34 , C04B2237/343 , C04B2237/366 , C04B2237/40 , C04B2237/403 , C04B2237/405 , C04B2237/407 , C04B2237/408 , C04B2237/592 , C04B2237/62 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/72 , C04B2237/74 , H01L23/3735 , H01L2924/0002 , H05K1/0203 , H05K1/0207 , H05K1/0272 , H05K1/0306 , H05K3/0061 , H05K3/38 , H05K3/4629 , H05K3/4641 , H05K2201/0355 , H05K2201/064 , Y10T428/24612 , Y10T428/31678 , H01L2924/00
摘要： A ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. The ceramic assembly includes a ceramic layer to provide this electrical isolation. The ceramic layer has high thermal conductivity and high electrical resistivity. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer. The top conductive layer and the joining layer are etched to form the electrically isolated conductive pads. The conductive layers are bonded to the ceramic layer using a bare ceramic approach or a metallized ceramic approach.
摘要翻译：陶瓷组件包括一个或多个热耦合到发热装置的导电和导热焊盘，每个导电焊盘彼此电隔离。陶瓷组件包括提供该电隔离的陶瓷层。陶瓷层具有高导热性和高电阻率。使用中间接合材料，陶瓷层的顶表面和底表面各自与导电层（例如铜）接合。执行钎焊工艺以通过接合层将陶瓷层粘合到导电层。接合层是接合材料，陶瓷层和导电层的复合物。蚀刻顶部导电层和接合层以形成电隔离的导电焊盘。使用裸陶瓷方法或金属化陶瓷方法将导电层结合到陶瓷层。

6. 发明申请

US20070175621A1 Re-workable metallic TIM for efficient heat exchange 审中-公开
标题翻译：可重复使用的金属TIM，用于高效的热交换
公开(公告)号：US20070175621A1
公开(公告)日：2007-08-02
申请号：US11345556
申请日：2006-01-31
申请人： Madhav Datta , Peng Zhou , James Hom , Mark Munch , Mark McMaster
发明人： Madhav Datta , Peng Zhou , James Hom , Mark Munch , Mark McMaster
IPC分类号： H05K7/20
CPC分类号： H01L23/3736 , H01L23/3735 , H01L23/473 , H01L2224/73253
摘要： A heat exchanging system uses a metallic TIM for efficient heat transfer between a heat source and a heat exchanger. The heat source is preferably an integrated circuit coupled to a circuit board. The metallic TIM preferably comprises indium. The metallic TIM is comprised of either a separate metallic TIM foil or as a deposited layer of metal material. The metallic TIM foil is mechanically joined to a first surface of the heat exchanger and to a first surface of the integrated circuit by applying sufficient pressure during clamping. Disassembly is accomplished by un-clamping the heat exchanger, the metallic TIM foil, and the integrated circuit from each other. Once disassembled, the heat exchanger and the metallic TIM foil are available to be used again. If the metallic TIM is deposited onto the heat exchanger, disassembly yields a heat exchanging sub-assembly that is also reusable.
摘要翻译：热交换系统使用金属TIM来在热源和热交换器之间进行有效的热传递。热源优选为耦合到电路板的集成电路。金属TIM优选包含铟。金属TIM由单独的金属TIM箔或金属材料的沉积层组成。金属TIM箔通过在夹紧期间施加足够的压力机械地连接到热交换器的第一表面和集成电路的第一表面。通过将热交换器，金属TIM箔和集成电路彼此不夹紧来实现拆卸。一旦分解，热交换器和金属TIM箔可以再次使用。如果金属TIM沉积在热交换器上，则拆卸产生也是可重复使用的热交换子组件。

7. 发明授权

US06977224B2 Method of electroless introduction of interconnect structures 有权
标题翻译：化学引入互连结构的方法
公开(公告)号：US06977224B2
公开(公告)日：2005-12-20
申请号：US09753256
申请日：2000-12-28
申请人： Valery M. Dubin , Christopher D. Thomas , Paul McGregor , Madhav Datta
发明人： Valery M. Dubin , Christopher D. Thomas , Paul McGregor , Madhav Datta
IPC分类号： H01L21/288 , H01L21/768 , H01L23/532 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/76846 , H01L21/76849 , H01L21/76864 , H01L21/76873 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, and introducing a conductive shunt material through a chemically-induced oxidation-reduction reaction. A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, introducing a conductive shunt material having an oxidation number over an exposed surface of the interconnect structure, and reducing the oxidation number of the shunt. An apparatus comprising a substrate comprising a device having contact point, a dielectric layer overlying the device with an opening to the contact point, and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material.
摘要翻译：一种方法，包括在开口中通过接触点上的电介质引入互连结构，以及通过化学诱导的氧化还原反应引入导电分流材料。一种方法，包括在开口中通过介电层在接触点上引入互连结构，在互连结构的暴露表面上引入具有氧化数的导电分流材料，并减少分流的氧化数。一种装置，包括：衬底，其包括具有接触点的器件，覆盖所述器件的介电层，所述器件具有到所述接触点的开口;以及布置在所述开口中的互连结构，包括互连材料和不同的导电分流材料。

8. 发明授权

US06258703B1 Reflow of low melt solder tip C4's 有权
标题翻译：低熔点焊料C4的回流
公开(公告)号：US06258703B1
公开(公告)日：2001-07-10
申请号：US09359061
申请日：1999-07-21
申请人： John Michael Cotte , Madhav Datta , Sung Kwon Kang
发明人： John Michael Cotte , Madhav Datta , Sung Kwon Kang
IPC分类号： H01L2144
CPC分类号： H05K3/3436 , H01L24/11 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/13116 , H01L2224/1357 , H01L2224/13616 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H05K3/3452 , H05K2201/2081 , H05K2203/159 , H05K2203/306 , Y02P70/613 , H01L2924/0105 , H01L2224/13099 , H01L2224/29099
摘要： An array of C4 solder bumps and a method for making is described incorporating an array of conductive areas on an electrical device, each conductive area having a layer of ball limited metalurgy at the device surface and two layers of solder having respective melting temperatures to form the C4 structure. The method includes melting the second layer of solder in the down position or towards earth to form a C4 solder ball or bump. The invention overcomes the problem of low temperature solder from wicking over the sidewall surfaces of the high melt solder of the C4 structure and attacking the edges of the underlying seed layers of the ball limited metalurgy.
摘要翻译：描述了C4焊料凸块的阵列和制造方法，其中在电气装置上结合有导电区域的阵列，每个导电区域在器件表面具有一层球限定的金属，并且具有相应的熔化温度的两层焊料形成 C4结构。该方法包括将第二层焊料熔化在向下的位置或者朝向地球，以形成C4焊球或凸块。本发明克服了在C4结构的高熔点焊料的侧壁表面上芯吸的低温焊料的问题，并攻击了有限的金属冶金的下层种子层的边缘。

9. 发明授权

US5462638A Selective etching of TiW for C4 fabrication 失效
标题翻译：选择性蚀刻TiW用于C4制造
公开(公告)号：US5462638A
公开(公告)日：1995-10-31
申请号：US260049
申请日：1994-06-15
申请人： Madhav Datta , Ravindra V. Shenoy
发明人： Madhav Datta , Ravindra V. Shenoy
IPC分类号： C23F1/26 , C23F1/44 , H01L21/28 , H01L21/306 , H01L21/3213 , H01L21/60 , H01L23/485 , H01L21/00 , B44C1/22 , C23F1/02
CPC分类号： H01L24/11 , C23F1/26 , C23F1/44 , H01L24/13 , H01L2224/13099 , H01L2224/13116 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/19043
摘要： A chemical etchant (and a method for forming the etchant) is disclosed for removing thin films of titanium-tungsten alloy in microelectronic chip fabrication. The alloy removed is preferably 10% Ti and 90% W, which is layered onto a substrate under chromium and copper seed layers for electrodeposition of C4 solder bumps. In this application the Ti--W etchant should not attack aluminum, chromium, copper, or lead-tin solders, and should dissolve Ti--W rapidly. The invention achieves this with a mixture of 30% by weight hydrogen peroxide and water, to which is added EDTA and potassium sulfate. The hydrogen peroxide etches Ti--W rapidly at temperatures between 40.degree. C. and 60.degree. C. EDTA forms a complex with tungsten to prevent plating of the Pb--Sn solder with W, and potassium sulfate forms a protective coating on the Pb--Sn solder to protect it from chemical attack.
摘要翻译：公开了用于在微电子芯片制造中去除钛 - 钨合金薄膜的化学腐蚀剂（和形成蚀刻剂的方法）。除去的合金优选为10％Ti和90％W，其在铬和铜种子层下层叠到基底上，用于电沉积C4焊料凸块。在这种应用中，Ti-W蚀刻剂不应该侵蚀铝，铬，铜或铅锡焊料，并应迅速溶解Ti-W。本发明通过30重量％的过氧化氢和水的混合物实现，向其中加入EDTA和硫酸钾。过氧化氢在40℃至60℃的温度下快速蚀刻Ti-W。EDTA与钨形成复合物，以防止用W镀Pb-Sn焊料，硫酸钾在Pb-Sn上形成保护涂层焊料保护它免受化学侵蚀。

10. 发明授权

US5190463A High performance metal cone contact 失效
标题翻译：高性能金属锥接触
公开(公告)号：US5190463A
公开(公告)日：1993-03-02
申请号：US797575
申请日：1991-11-25
申请人： Madhav Datta , David E. King , Alan D. Knight , Carlos J. Sambucetti
发明人： Madhav Datta , David E. King , Alan D. Knight , Carlos J. Sambucetti
IPC分类号： H01H1/06 , H01L21/60 , H01R12/04 , H01R12/32 , H01R13/03 , H01R13/22 , H01R43/16 , H05K1/11 , H05K3/06 , H05K3/07 , H05K3/24 , H05K3/38 , H05K3/40
CPC分类号： H05K3/07 , H01R13/22 , H05K3/4007 , H01L2924/0002 , H01R13/03 , H01R43/16 , H05K2201/0367 , H05K2201/0373 , H05K2203/0369 , H05K3/064 , H05K3/383 , Y10T29/49222
摘要： An electrical interconnection, which includes a method for fabricating the device, is disclosed. The interconnection comprises two contact surfaces, on at least one of which is disposed at least one solid metal conical projection in predetermined dimension and location. Rather than necessarily being permanently cojoined, the contact surfaces are attachable and detachable when desired. The conical projections on one contact surface make ohmic contact, either by wiping with an intermeshing like structure on a second contact surface or by contacting a second contact surface which is a substantially flat contact pad. An interconnection, in this invention, is the combination of at least one contact having individual conical projections and another contact, optionally having individual conical projections. The conical projections are formed in metal by electrochemical machining in neutral salt solution, optionally in a continuous foil. The conical projections are also optionally formed on the head of a contact pin.
摘要翻译：公开了一种包括制造该装置的方法的电互连。互连包括两个接触表面，其中至少一个接触表面设置有至少一个预定尺寸和位置的固体金属锥形突起。不必一定地永久地共同接合，当需要时，接触表面是可附接的和可拆卸的。一个接触表面上的锥形突起通过在第二接触表面上用相互啮合的结构擦拭或者通过接触作为基本上平坦的接触垫的第二接触表面来进行欧姆接触。在本发明中的互连是至少一个具有单独的锥形突起的接触件和另一个接触件的组合，可选地具有单独的锥形突出部。锥形凸起通过在中性盐溶液中的电化学机械加工形成金属，任选地在连续的箔中。锥形突起也可选地形成在接触销的头部上。

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