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    • 2. 发明申请
    • REYNOLDS NUMBER CORRECTION FUNCTION FOR MASS FLOW RATE SENSOR
    • 适用于大量流量传感器的数字校正功能
    • WO2006055314A2
    • 2006-05-26
    • PCT/US2005/040280
    • 2005-11-07
    • MKS INSTRUMENTS, INC.SHAJII, AliMENEGHINI, Paul
    • SHAJII, AliMENEGHINI, Paul
    • G01F15/046G01F1/6847G01F1/6965G01F5/00
    • A mass flow rate sensor uses a Reynolds number correction function to compensate for errors in a bypass ratio of the sensor for all gases, based on the fact that all bypass errors are functions of Reynolds number. The sensor includes a sensor tube and a bypass tube dividing flow, wherein a bypass ratio of the sensor equals a total flow rate through the sensor divided by a flow rate through just the sensor tube. Heater elements heat an upstream portion and a downstream portion of the sensor tube, and a circuit is connected to the heater elements for producing a voltage based upon a difference in resistance between the heater elements. The voltage is calibrated based on known flow rates of a reference gas, and the flow rate through the sensor is based upon the calibrated voltage multiplied by a multi-gas correction function and a Reynolds number correction function.
    • 基于所有旁路误差是雷诺数的函数的事实,质量流量传感器使用雷诺数校正功能来补偿所有气体的传感器的旁路比的误差。 传感器包括传感器管和旁路管分流,其中传感器的旁路比等于通过传感器的总流量除以仅通过传感器管的流量。 加热元件加热传感器管的上游部分和下游部分,并且电路连接到加热器元件,用于基于加热器元件之间的电阻差产生电压。 基于参考气体的已知流速校准电压,并且通过传感器的流量基于校准电压乘以多气体校正功能和雷诺数校正功能。
    • 8. 发明申请
    • PARTICLE REDUCTION THROUGH GAS AND PLASMA SOURCE CONTROL
    • 通过气体和等离子体源控制减少颗粒
    • WO2008154222A1
    • 2008-12-18
    • PCT/US2008/065651
    • 2008-06-03
    • MKS INSTRUMENTS, INC.ENTLEY, William, RobertCHEN, XingSHAJII, AliBAKHTARI, KavehCOWE, Andrew
    • ENTLEY, William, RobertCHEN, XingSHAJII, AliBAKHTARI, KavehCOWE, Andrew
    • H01J37/32
    • H01J37/3299H01J37/32357H01J37/3244H01J37/32449
    • A system for producing excited gases for introduction to a. semiconductor processing chamber. The system includes a plasma source (104) for generating a plasma. The plasma source includes a plasma chamber (156) and a gas inlet (126) for receiving process gases from a gas source (116). A gas flow rate controller (108) is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas. to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 seem to about 10,000 seem over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.
    • 用于生产用于引入a的激发气体的系统。 半导体处理室。 该系统包括用于产生等离子体的等离子体源(104)。 等离子体源包括用于从气体源(116)接收工艺气体的等离子体室(156)和气体入口(126)。 气体流量控制器(108)耦合到气体入口,用于经由气体入口控制从气体源到等离子体室的处理气体的入口流量。 该系统包括用于检测来自第一处理气体的转变的控制回路。 到第二工艺气体并且用于在大于约300毫秒的时间段内将第二工艺气体的入口流量从约0sccm调节至约10,000sccm,以将由等离子体施加的瞬态热通量负载保持在 等离子体室低于等离子体室的汽化温度。