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    • 1. 发明申请
    • PARTICLE REDUCTION THROUGH GAS AND PLASMA SOURCE CONTROL
    • 通过气体和等离子体源控制减少颗粒
    • WO2008154222A1
    • 2008-12-18
    • PCT/US2008/065651
    • 2008-06-03
    • MKS INSTRUMENTS, INC.ENTLEY, William, RobertCHEN, XingSHAJII, AliBAKHTARI, KavehCOWE, Andrew
    • ENTLEY, William, RobertCHEN, XingSHAJII, AliBAKHTARI, KavehCOWE, Andrew
    • H01J37/32
    • H01J37/3299H01J37/32357H01J37/3244H01J37/32449
    • A system for producing excited gases for introduction to a. semiconductor processing chamber. The system includes a plasma source (104) for generating a plasma. The plasma source includes a plasma chamber (156) and a gas inlet (126) for receiving process gases from a gas source (116). A gas flow rate controller (108) is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas. to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 seem to about 10,000 seem over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.
    • 用于生产用于引入a的激发气体的系统。 半导体处理室。 该系统包括用于产生等离子体的等离子体源(104)。 等离子体源包括用于从气体源(116)接收工艺气体的等离子体室(156)和气体入口(126)。 气体流量控制器(108)耦合到气体入口,用于经由气体入口控制从气体源到等离子体室的处理气体的入口流量。 该系统包括用于检测来自第一处理气体的转变的控制回路。 到第二工艺气体并且用于在大于约300毫秒的时间段内将第二工艺气体的入口流量从约0sccm调节至约10,000sccm,以将由等离子体施加的瞬态热通量负载保持在 等离子体室低于等离子体室的汽化温度。
    • 2. 发明申请
    • OZONE AND PLASMA GENERATION USING ELECTRON BEAM TECHNOLOGY
    • 使用电子束技术的臭氧和等离子体生成
    • WO2012083184A1
    • 2012-06-21
    • PCT/US2011/065523
    • 2011-12-16
    • ADVANCED ELECTRON BEAMS, INC.BAKHTARI, Kaveh
    • BAKHTARI, Kaveh
    • H01L21/306
    • B01J19/085C01B13/10H01J3/02H01J33/00H01J37/3233H01J37/32357H01J37/32816
    • This invention proposes, among other things, systems and methods for providing ozone generators or plasma generators that generate an electric field in an electron generation chamber that is separate from a reaction chamber. An electron beam emitter in an electron generation chamber is configured to emit a beam of electrons and is separated from the reaction chamber by an electron permeable barrier that provides a window through which the beam of electrons passes. The electrons are accelerated to the required energy in the electron generation chamber and transmitted through the barrier to the reaction chamber, where an input gas source introduces an input gas into the reaction chamber. The input gas may react with the beam of electrons inside the reaction chamber to form an output gas comprising a plasma or a concentration of ozone, and the output gas passes from the reaction chamber to a wafer processing chamber.
    • 本发明尤其提出了用于提供在与反应室分离的电子发生室中产生电场的臭氧发生器或等离子体发生器的系统和方法。 电子发生室中的电子束发射器被配置为发射电子束,并且通过电子可透过的屏障与反应室分离,该屏障提供电子束通过的窗口。 电子被加速到电子发生室中所需的能量,并通过势垒传递到反应室,其中输入气体源将输入气体引入反应室。 输入气体可以与反应室内的电子束反应形成包含等离子体或浓度的臭氧的输出气体,并且输出气体从反应室通到晶片处理室。