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1. 发明申请

WO2011153228A2 REDUCTION OF COPPER OR TRACE METAL CONTAMINANTS IN PLASMA ELECTROLYTIC OXIDATION COATINGS 审中-公开
标题翻译：在等离子体电解氧化涂料中还原铜或金属污染物
公开(公告)号：WO2011153228A2
公开(公告)日：2011-12-08
申请号：PCT/US2011/038746
申请日：2011-06-01
申请人： MKS INSTRUMENTS, INC. , CHEN, Xing , JI, Chengxiang , TAI, Chiu-Ying
发明人： CHEN, Xing , JI, Chengxiang , TAI, Chiu-Ying
IPC分类号： C25D5/48 , C25D11/04 , C23C16/44 , H01J37/16 , H01J37/32
CPC分类号： C25D11/04 , C23C28/321 , C25D5/48 , C25D11/026 , C25D11/16 , H01J37/16 , H01J37/32357 , H01J37/32431 , H01J37/32467
摘要： A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen- comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.
摘要翻译：一种在半导体处理系统中用于产生包含铝和铜的物体表面上的铜浓度降低的氧化物层的方法。使用等离子体电解氧化方法生产的氧化物层具有降低的铜峰浓度，这降低了铜污染的风险，并且包括在暴露于包含激发的含卤素气体或含卤素的等离子体时可转化为卤化镁的氧化镁以增加氧化物层的侵蚀/耐腐蚀性。

2. 发明申请

WO2015148246A1 MICROWAVE PLASMA APPLICATOR WITH IMPROVED POWER UNIFORMITY 审中-公开
标题翻译：具有改进功率均匀性的MICROWAVE等离子体应用器
公开(公告)号：WO2015148246A1
公开(公告)日：2015-10-01
申请号：PCT/US2015/021382
申请日：2015-03-19
申请人： MKS INSTRUMENTS, INC.
发明人： CHEN, Xing , JI, Chengxiang , MADDEN, Erin , POKIDOV, Ilya , WENZEL, Kevin, W.
IPC分类号： H05H1/46
CPC分类号： H01J37/32229 , H01J37/32201 , H01J37/32311 , H01J37/32522 , H05H1/46 , H05H2001/4622
摘要： An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.
摘要翻译：用于产生等离子体的装置包括等离子体放电管和螺旋缠绕在等离子体放电管的外表面上的导电线圈。波导耦合到围绕等离子体放电管的微波腔，以将微波能量引导到等离子体放电管中，使得等离子体在等离子体放电管中产生。波导被定位成使得微波能量的电场相对于等离子体放电管的纵向轴线定向成预定角度。导电线圈中产生的感应电流影响等离子体放电管中的功率吸收，该预定角度是可选择的，使得等离子体放电管中的功率吸收相对于等离子体放电管的纵向轴线具有预定的轮廓。

3. 发明申请

WO2013085885A1 GAS INJECTOR APPARATUS FOR PLASMA APPLICATOR 审中-公开
标题翻译：燃气喷射装置等离子喷涂机
公开(公告)号：WO2013085885A1
公开(公告)日：2013-06-13
申请号：PCT/US2012/067724
申请日：2012-12-04
申请人： MKS INSTRUMENTS, INC.
发明人： CHEN, Xing , GU, Youfan , JI, Chengxiang , LOOMIS, Paul A. , POKIDOV, Ilya , WENZEL, Kevin W.
IPC分类号： H01J37/32 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/452 , H01J37/32495
摘要： A plasma chamber for use with a reactive gas source that includes a first conduit comprising a wall, an inlet, an outlet, an inner and outer surface, and a plurality of openings through the wall, the inlet receives a first gas for generating a reactive gas in the first conduit with a plasma formed in the first conduit. The plasma chamber also includes a second conduit that includes a wall, an inlet, and an inner surface. The first conduit is disposed in the second conduit defining a channel between the outer surface of the first conduit and the inner surface of the second conduit. A second gas provided to the inlet of the second conduit flows along the channel and through the plurality of openings of the wall of the first conduit into the first conduit to surround the reactive gas and plasma in the first conduit.
摘要翻译：一种与反应性气体源一起使用的等离子体室，其包括第一导管，其包括壁，入口，出口，内部和外部表面以及穿过壁的多个开口，所述入口容纳用于产生反应性的第一气体第一导管中的气体在第一导管中形成等离子体。等离子体室还包括第二导管，其包括壁，入口和内表面。第一导管设置在第二导管中，限定在第一导管的外表面和第二导管的内表面之间的通道。设置到第二导管入口的第二气体沿着通道流动并且穿过第一导管的壁的多个开口进入第一导管，以围绕第一导管中的反应气体和等离子体。

4. 发明公开

EP2789005A1 GAS INJECTOR APPARATUS FOR PLASMA APPLICATOR 审中-公开
标题翻译：气体注入用于等离子体施放
公开(公告)号：EP2789005A1
公开(公告)日：2014-10-15
申请号：EP12809402.6
申请日：2012-12-04
申请人： MKS Instruments, Inc.
发明人： CHEN, Xing , GU, Youfan , JI, Chengxiang , LOOMIS, Paul A. , POKIDOV, Ilya , WENZEL, Kevin W.
IPC分类号： H01J37/32 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/452 , H01J37/32495
摘要： A plasma chamber for use with a reactive gas source that includes a first conduit comprising a wall, an inlet, an outlet, an inner and outer surface, and a plurality of openings through the wall, the inlet receives a first gas for generating a reactive gas in the first conduit with a plasma formed in the first conduit. The plasma chamber also includes a second conduit that includes a wall, an inlet, and an inner surface. The first conduit is disposed in the second conduit defining a channel between the outer surface of the first conduit and the inner surface of the second conduit. A second gas provided to the inlet of the second conduit flows along the channel and through the plurality of openings of the wall of the first conduit into the first conduit to surround the reactive gas and plasma in the first conduit.

5. 发明公开

EP3123840A1 MICROWAVE PLASMA APPLICATOR WITH IMPROVED POWER UNIFORMITY 有权
标题翻译：食品加工食品加工机械
公开(公告)号：EP3123840A1
公开(公告)日：2017-02-01
申请号：EP15715899.9
申请日：2015-03-19
申请人： MKS Instruments, Inc.
发明人： CHEN, Xing , JI, Chengxiang , MADDEN, Erin , POKIDOV, Ilya , WENZEL, Kevin, W.
IPC分类号： H05H1/46
摘要： An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.
摘要翻译：用于产生等离子体的装置包括等离子体放电管和螺旋缠绕在等离子体放电管的外表面上的导电线圈。波导耦合到围绕等离子体放电管的微波腔，以将微波能量引导到等离子体放电管中，使得在等离子体放电管中产生等离子体。波导被定位成使得微波能量的电场相对于等离子体放电管的纵向轴线以预定的角度定向。导电线圈中产生的感应电流影响等离子体放电管中的功率吸收，预定角度是可选择的，使得等离子体放电管中的功率吸收相对于等离子体放电管的纵向轴线具有预定的轮廓。

6. 发明公开

EP2576872A2 REDUCTION OF COPPER OR TRACE METAL CONTAMINANTS IN PLASMA ELECTROLYTIC OXIDATION COATINGS 有权
标题翻译： REDUZIERUNG VON KUPFER- ODER SPURENMETALLVERUNREINIGUNGEN BEI PLASMAELEKTROLYTISCHEN OXIDATIONSBESCHICHTUNGEN
公开(公告)号：EP2576872A2
公开(公告)日：2013-04-10
申请号：EP11727017.3
申请日：2011-06-01
申请人： MKS Instruments, Inc.
发明人： CHEN, Xing , JI, Chengxiang , TAI, Chiu-Ying
IPC分类号： C25D5/48 , C25D11/04 , C23C16/44 , H01J37/16 , H01J37/32
CPC分类号： C25D11/04 , C23C28/321 , C25D5/48 , C25D11/026 , C25D11/16 , H01J37/16 , H01J37/32357 , H01J37/32431 , H01J37/32467
摘要： A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen- comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.
摘要翻译：一种用于在半导体处理系统中使用的包含铝和铜的物体的表面上的铜浓度降低的氧化物层的制造方法。使用等离子体电解氧化方法生产的氧化物层具有降低的铜峰浓度，这降低了铜污染的风险，并且包括在暴露于含激发的含卤素气体或含卤素的等离子体时可转化为卤化镁的氧化镁以增加氧化物层的侵蚀/耐腐蚀性。

7. 发明授权

EP2576872B1 REDUCTION OF COPPER OR TRACE METAL CONTAMINANTS IN PLASMA ELECTROLYTIC OXIDATION COATINGS 有权
标题翻译：在等离子体电解氧化涂层中还原铜或痕量金属污染物
公开(公告)号：EP2576872B1
公开(公告)日：2017-08-23
申请号：EP11727017.3
申请日：2011-06-01
申请人： MKS Instruments, Inc.
发明人： CHEN, Xing , JI, Chengxiang , TAI, Chiu-Ying
IPC分类号： C25D11/02 , C25D11/16 , C23C28/00 , C25D11/04 , C25D5/48 , H01J37/16 , H01J37/32
CPC分类号： C25D11/04 , C23C28/321 , C25D5/48 , C25D11/026 , C25D11/16 , H01J37/16 , H01J37/32357 , H01J37/32431 , H01J37/32467

8. 发明公开

EP3641507A1 MICROWAVE PLASMA APPLICATOR WITH IMPROVED POWER UNIFORMITY 有权
公开(公告)号：EP3641507A1
公开(公告)日：2020-04-22
申请号：EP19209218.7
申请日：2015-03-19
申请人： MKS Instruments, Inc.
发明人： CHEN, Xing , JI, Chengxiang , MADDEN, Erin , POKIDOV, Ilya , WENZEL, Kevin W.
IPC分类号： H05H1/46 , H01J37/32
摘要： An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.

9. 发明授权

EP3123840B1 MICROWAVE PLASMA APPLICATOR WITH IMPROVED POWER UNIFORMITY 有权
公开(公告)号：EP3123840B1
公开(公告)日：2019-12-25
申请号：EP15715899.9
申请日：2015-03-19
申请人： MKS Instruments, Inc.
发明人： CHEN, Xing , JI, Chengxiang , MADDEN, Erin , POKIDOV, Ilya , WENZEL, Kevin, W.
IPC分类号： H05H1/46

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