专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH02296722A OXIDE SUPERCONDUCTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH02296722A
公开(公告)日：1990-12-07
申请号：JP11726289
申请日：1989-05-12
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , TOKYO ELECTRIC POWER CO , HITACHI LTD , MITSUBISHI MATERIALS CORP , TOSHIBA CORP , OKI ELECTRIC IND CO LTD , SUMITOMO ELECTRIC INDUSTRIES , MITSUBISHI ELECTRIC CORP , KANSAI ELECTRIC POWER CO , FURUKAWA ELECTRIC CO LTD , CHUBU ELECTRIC POWER , MATSUSHITA ELECTRIC IND CO LTD
发明人： SAKURAI TAKESHI , YAMASHITA TORU , SAKAI SUKEYUKI , YAMAUCHI HISAO , TANAKA SHOJI , IKEDA HIROSHI , IKEGAWA SUMIO , ITO TAKAO , OKUDA SHIGERU , SUZUKI NOBURO , NISHIKAWA TOKUHIRO , NOZAKI AYUMI , MAEDA TOSHIHIKO , MIYAJIMA MASAMICHI , WADA TAKAHIRO
IPC分类号： C04B35/00 , C01G1/00 , C01G3/00 , C04B35/45 , H01B12/00 , H01L39/12
摘要： PURPOSE:To easily manufacture the oxide superconductor in which a superconducting phase appears over the wide compositional range by subjecting an oxide sintered body contg. each specified molar ratio of Nd, Ce, Ba and Cu to heat treatment in a reducing atmosphere. CONSTITUTION:An oxide sintered body expressed by compositional formula of {Nd1-x(Ce1-yBay)x}2CuO4-d and contg. Nd, Ce, Ba and Cu each in the molar ratio of 2(1-x):2x(1-y):2xy:1 (where 0

2. 发明专利

JPH01212225A OXIDE SUPERCONDUCTING MATERIAL 失效
公开(公告)号：JPH01212225A
公开(公告)日：1989-08-25
申请号：JP3580488
申请日：1988-02-18
申请人： TANAKA SHOJI , TOKYO ELECTRIC POWER CO , CHUBU ELECTRIC POWER , KANSAI ELECTRIC POWER CO , OKI ELECTRIC IND CO LTD , SUMITOMO ELECTRIC INDUSTRIES , TOSHIBA CORP , HITACHI LTD , FURUKAWA ELECTRIC CO LTD , MATSUSHITA ELECTRIC IND CO LTD , MITSUBISHI ELECTRIC CORP
发明人： TANAKA SHOJI , WADA TAKAHIRO , HONDA TOSHIHISA , SAKAI SUKEYUKI , SUZUKI NOBURO , IKEDA HIROSHI , MIYAJIMA MASAMICHI , NISHIKAWA TOKUHIRO , ITO TAKAO , OKUDA SHIGERU , IKEGAWA SUMIO , KOMINAMI SHINYA , MAEDA TOSHIHIKO
IPC分类号： H01L39/12 , C01G1/00 , C01G29/00 , C04B35/00 , C04B35/45 , H01B12/00
摘要： PURPOSE:To decrease the synthesis temp. and to increase the critical temp. of the title material by substituting a part of Sr and Ca for >=1 kind of an alkali metal element in a specified molar ratio in the oxide superconducting material based on Bi-Sr-Ca-Cu-O. CONSTITUTION:The oxide superconducting material is the superconducting oxide consisting of oxygen and metallic elements such as Bi, Sr, Ca, Cu, and A (A is >=1 kind of alkali metal element selected from La, Na, K, Rb, or Cs). The composition of the metallic elements is in the range shown by the formula. In the formula, (a+b+c)=1, (X+Y+Z)=1, 0.05

3. 发明专利

JPH01234353A HEAT TREATMENT OF SUPERCONDUCTING MATERIAL 失效
公开(公告)号：JPH01234353A
公开(公告)日：1989-09-19
申请号：JP5757988
申请日：1988-03-11
申请人： TANAKA SHOJI , TOKYO ELECTRIC POWER CO , CHUBU ELECTRIC POWER , KANSAI ELECTRIC POWER CO , OKI ELECTRIC IND CO LTD , SUMITOMO ELECTRIC INDUSTRIES , TOSHIBA CORP , HITACHI LTD , FURUKAWA ELECTRIC CO LTD , MATSUSHITA ELECTRIC IND CO LTD , MITSUBISHI ELECTRIC CORP
发明人： TANAKA SHOJI , WADA TAKAHIRO , HONDA TOSHIHISA , SAKAI SUKEYUKI , SUZUKI NOBURO , IKEDA HIROSHI , MIYAJIMA MASAMICHI , NISHIKAWA TOKUHIRO , ITO TAKAO , OKUDA SHIGERU , IKEGAWA SUMIO , KOMINAMI SHINYA , MAEDA TOSHIHIKO
IPC分类号： H01L39/24 , C01G1/00 , C04B35/00 , C04B35/45 , C04B41/80 , H01B13/00
摘要： PURPOSE:To obtain a superconducting material having >=90K critical temp. at a low cost by applying a combination of two processes with different temps. and oxygen partial pressures to a super-conducting material consisting essentially of LaBa2Cu3O7-delta. CONSTITUTION:The superconducting material consisting essentially of LaBa2Cu3 O7-delta is heated at a temp. higher than 950 deg.C and not exceeding the m.p. and at atm oxygen partial pressure. The heated material is heated at atm oxygen partial pressure in a water-free atmosphere. The water-free atmosphere contains 0.005mg/l water, and can be realized by passing an oxygen- contg. gas through a dehydrating agent such as silica gel, KOH, and P2O5 and supplying the dehydrated gas to a reaction zone.

4. 发明专利

JPH03259764A METHOD AND DEVICE FOR MEASURING ALTERNATING CURRENT MAGNETIZATION RATE 失效
公开(公告)号：JPH03259764A
公开(公告)日：1991-11-19
申请号：JP5972490
申请日：1990-03-09
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , UBE INDUSTRIES , TOSHIBA CORP
发明人： YOSHIKAWA HIROSHI , IKEGAWA SUMIO , YAMAUCHI HISAO
IPC分类号： G01R33/16 , G01R33/02 , G01R35/00
摘要： PURPOSE:To easily and accurately measure the phase of a detector by setting high-temperature superconductors in mutual induction coils, and varying measured temperature in a temperature area which is much lower than its critical temperature and impressing a voltage to a primary coil. CONSTITUTION:Eight mutual induction coils 101-108 are incorporated in a cryostat 1. The high-temperature superconductors are inserted into the coils 101-108 and the measured temperature is varied in the temperature area which is much lower than the critical temperature; and a scanner 2 switches the coils 101-108 in order to detect the phase difference between the phase of voltages impressed to primary coils M1 of the coils 101-108 and the phase of voltages induced across secondary coils M2, and output signals are stored in an external storage device through a lock-in amplifier 3. Those measured values are utilized to adjust the phase differences from the voltages impressed to the primary coils M1 when the phases of the voltages induced across the secondary coils M2 of the coils 101-108 are detected sensitively, thereby finding the actual AC magnetization rates of the samples.

5. 发明专利

JP2013251336A Magnetic storage element and manufacturing method of magnetic memory 审中-公开
标题翻译：磁记忆的磁性储存元件和制造方法
公开(公告)号：JP2013251336A
公开(公告)日：2013-12-12
申请号：JP2012123440
申请日：2012-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , AIKAWA HISANORI , TOKO MASARU , YODA HIROAKI , KISHI TATSUYA , IKEGAWA SUMIO
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
CPC分类号： H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To maintain the magnetization state of a magnetic storage element even when the magnetic storage element underwent a reflow process.SOLUTION: A magnetic storage element 20 includes: a storage layer 30; a first non-magnetic layer 31 provided adjacent to the storage layer 30; a reference layer 32 provided adjacent to the first non-magnetic layer 31 and including a ferrimagnetic material; a second non-magnetic layer 33 provided adjacent to the reference layer 32; and an adjustment layer 34 provided adjacent to the second non-magnetic layer 33. A manufacturing method of a magnetic memory 11 including the magnetic storage element 20 includes the steps of: packaging the magnetic memory 11 and forming a memory package 10; and joining the memory package 10 to a substrate 18 by reflow soldering. A reflow temperature in the reflow process is set to a temperature that is equal to or higher than a compensation temperature of the reference layer 32 and is equal to or lower than Neel temperature.
摘要翻译：要解决的问题：即使当磁存储元件经受回流处理时，也能保持磁存储元件的磁化状态。解决方案：磁存储元件20包括：存储层30; 与存储层30相邻设置的第一非磁性层31; 设置在第一非磁性层31附近并包括铁磁材料的参考层32; 与参考层32相邻设置的第二非磁性层33; 以及与第二非磁性层33相邻设置的调整层34.包括磁性存储元件20的磁性存储器11的制造方法包括以下步骤：包装磁性存储器11并形成存储器组件10; 并通过回流焊接将存储器封装10连接到衬底18。回流处理中的回流温度设定为等于或高于参考层32的补偿温度并且等于或低于Neel温度的温度。

6. 发明专利

JP2013069862A Magnetoresistance effect element 审中-公开
标题翻译：磁阻效应元素
公开(公告)号：JP2013069862A
公开(公告)日：2013-04-18
申请号：JP2011207323
申请日：2011-09-22
申请人： Toshiba Corp , 株式会社東芝
发明人： MURAYAMA AKIYUKI , IKEGAWA SUMIO , NAKAYAMA MASAHIKO , AIKAWA HISANORI , KISHI TATSUYA
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To inhibit malfunction of a magnetic memory.SOLUTION: A magnetoresistance effect element of an element comprises: a storage layer having perpendicular magnetic anisotropy and a variable magnetization direction; a reference layer having perpendicular magnetic anisotropy and an invariable magnetization direction; a non-magnetic layer 11 between the storage layer and the reference layer; and a shift adjustment layer having an invariable magnetization direction. The reference layer includes a first temperature dependence LM1 of magnetization and the shift adjustment layer includes a second temperature dependence LM2 of magnetization different from that of the reference layer. A leak field of the reference layer and a leak field of the shift adjustment layer are cancelled with each other under a memory operation temperature. A shift magnetic field caused by one of a leak field of the reference layer and a leak field of the shift adjustment layer is applied to magnetization of the storage layer under a mounting temperature.
摘要翻译：要解决的问题：抑制磁存储器的故障。解决方案：元件的磁阻效应元件包括：具有垂直磁各向异性和可变磁化方向的存储层; 具有垂直磁各向异性和不变磁化方向的参考层; 存储层和参考层之间的非磁性层11; 以及具有不变磁化方向的移位调整层。参考层包括磁化的第一温度依赖性LM1，移位调整层包括不同于参考层的磁化的第二温度依赖性LM2。参考层的泄漏场和位移调整层的泄漏场在存储器操作温度下相互抵消。在安装温度下，对存储层的磁化施加由参考层的泄漏场和移动调整层的泄漏场中的一个引起的移动磁场。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012094894A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2012094894A
公开(公告)日：2012-05-17
申请号：JP2011286353
申请日：2011-12-27
申请人： Toshiba Corp , 株式会社東芝
发明人： OSEGI JUNICHI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KAI TADASHI , NAKAYAMA MASAHIKO , AIKAWA HISANORI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce a leakage field applied to a memory layer as much as possible.SOLUTION: A magnetoresistance effect element comprises a ferromagnetic layer 10 having magnetic anisotropy in the direction perpendicular to the film surface, a first nonmagnetic layer 8 provided on the ferromagnetic layer, a reference layer 6 provided on the first nonmagnetic layer and having magnetic anisotropy in the direction perpendicular to the film surface, magnetization anti-parallel with the direction of magnetization of the ferromagnetic layer and a film thickness equal to 1/2.8-1/1.5 that of the ferromagnetic layer in the lamination direction, a second nonmagnetic layer 8 provided on the reference layer, and a memory layer 2 provided on the second nonmagnetic layer and having magnetic anisotropy in the direction perpendicular to the film surface, and direction of magnetization which changes by action of spin-polarized electrons.
摘要翻译：要解决的问题：尽可能减少施加到存储器层的泄漏场。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的铁磁层10，设置在铁磁层上的第一非磁性层8，设置在第一非磁性层上并具有磁性的参考层6 在垂直于膜表面的方向上的各向异性，与铁磁层的磁化方向平行的磁化强度和层叠方向上的铁磁层的磁化强度等于1 / 2.8-1 / 1.5的膜厚度，第二非磁性层 8，以及设置在第二非磁性层上并且在垂直于膜表面的方向上具有磁各向异性的存储层2以及由自旋极化电子的作用而改变的磁化方向。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2009194393A Manufacturing method of reluctance element 有权
标题翻译：制动元件的制造方法
公开(公告)号：JP2009194393A
公开(公告)日：2009-08-27
申请号：JP2009107971
申请日：2009-04-27
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA TOMOMASA , AIKAWA HISANORI , YOSHIKAWA MASATOSHI , SHIMOMURA NAOHARU , NAKAYAMA MASAHIKO , IKEGAWA SUMIO , HOSOYA KEIJI , NAGAMINE MAKOTO
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To make it possible to manufacture a reluctance element capable of reducing an inversion current when magnetization is inverted in a simple process.
SOLUTION: The manufacturing method comprises the steps of forming a bottom electrode film on a substrate, forming a laminated film having a laminated structure of a first magnetic layer the magnetization direction of which provides an adhered magnetization adhered layer, a tunnel barrier layer and a second magnetic layer the magnetization direction of which provides a variable magnetization free layer on the bottom electrode film, forming a first top electrode film on the laminated film, patterning the first top electrode film to form a first top electrode, patterning the first top electrode to the second magnetic layer of the laminated layer as a mask, forming an insulating film so as to cover the first top electrode, exposing the top face of the first top electrode, forming a second top electrode film so as to cover the first top electrode, patterning the second top electrode film to form a second top electrode, and processing the second top electrode to the bottom electrode film as a mask with self-alignment.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了使得可以在简单的过程中制造当磁化反转时能够降低反转电流的磁阻元件。解决方案：制造方法包括以下步骤：在基板上形成底电极膜，形成具有层叠结构的叠层膜，该叠层结构具有其磁化方向提供粘附的磁化粘附层的第一磁性层，隧道势垒层以及第二磁性层，其磁化方向在底部电极膜上提供可变的磁化自由层，在层叠膜上形成第一顶部电极膜，图案化第一顶部电极膜以形成第一顶部电极，使第一顶部电极到层叠层的第二磁性层作为掩模，形成绝缘膜以覆盖第一顶部电极，暴露第一顶部电极的顶面，形成第二顶部电极膜以覆盖第一顶部电极，图案化第二顶部电极膜以形成第二顶部电极，以及将第二顶部电极处理到底部电极膜作为具有自我对准的面具。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008187048A MAGNETORESISTIVE EFFECT ELEMENT 审中-公开
公开(公告)号：JP2008187048A
公开(公告)日：2008-08-14
申请号：JP2007019973
申请日：2007-01-30
申请人： TOSHIBA CORP
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KISHI TATSUYA , YODA HIROAKI , UEDA TOMOMASA
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To achieve both reduction in writing currents and improvement in MR ratio at reading. SOLUTION: The magnetoresistive effect element comprises first and second ferromagnetic layers 11A and 11B of which magnetizing directions are fixed mutually opposite; a third ferromagnetic layer 12, which is arranged between the first and second ferromagnetic layers 11A and 11B with magnetizing direction changing; a first non magnetic layer 13A arranged between the first ferromagnetic layer 11A and the third ferromagnetic layer 12; and a second non magnetic layer 13B arranged between the second ferromagnetic layer 11B and the third ferromagnetic layer 12. When a reading voltage Ir is biased, MR ratio of a first unit U1 is in inverse state, while the MR ratio of a second unit U2 is in normal state. When writing voltages Iw"0" and Iw"1" are biased, the MR ratio of the first and second units U1 and U2 are both in the normal state. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2005251336A Magnetoresistive random access memory and driving method therefor 有权
标题翻译：磁性随机访问存储器及其驱动方法
公开(公告)号：JP2005251336A
公开(公告)日：2005-09-15
申请号：JP2004062788
申请日：2004-03-05
申请人： Toshiba Corp , 株式会社東芝
发明人： IKEGAWA SUMIO , IWATA YOSHIHISA , TSUCHIDA KENJI
IPC分类号： G11C11/15 , G11C11/00
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive random access memory with which read errors are reduced as far as possible and a large reproduction signal can be obtained.
SOLUTION: The driving method of a magnetoresistive random access memory having a memory cell which changes between binary resister values by the same write pulse comprises: a step for reading the resister value of the selected memory cell and making the read resister value a 1st resister value; a step for performing a 1st writing operation to the selected memory cell using a write pulse; a step for reading the resister value of the selected memory cell and making the read resister value a 2nd resister value; a step for comparing the 2nd resister value with the 1st resister value and deciding a data originally stored in the selected memory cell on the basis of the result of this comparison; and a step for performing 2nd write operation to the selected memory cell using the write pulse.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供尽可能减少读取误差的磁阻随机存取存储器，并且可以获得大的再现信号。解决方案：具有通过相同写入脉冲在二进制寄存器值之间变化的存储单元的磁阻随机存取存储器的驱动方法包括：读取所选存储单元的寄存器值并使读取寄存器值为a 第一名使用写入脉冲对选择的存储单元执行第一写入操作的步骤; 读取所选存储单元的寄存器值并使读取寄存器值为第二寄存器值的步骤; 将第二寄存器值与第一寄存器值进行比较的步骤，并且基于该比较的结果来决定原来存储在所选存储器单元中的数据; 以及使用写脉冲对选择的存储单元执行第二写操作的步骤。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式