专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS63306503A RECORDING AND REPRODUCING DEVICE FOR MAGNETIC CARD 失效
公开(公告)号：JPS63306503A
公开(公告)日：1988-12-14
申请号：JP14185787
申请日：1987-06-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAJIMA OSAMU , SUGAWARA HIROSHI , KOMURA AKIRA
IPC分类号： G11B5/09 , G11B5/00 , G11B5/127 , G11B5/80
摘要： PURPOSE:To easily record and reproduce information by providing a magnetic head with a heating body for heating a magnetic film and easing magnetism. CONSTITUTION:Current is allowed to flow between electrodes 8A, 8B and the heating body 7 is heated to heat the vicinity of an area opposed to a gap part 6 of a 2nd magnetic film 4 in contact with a magnetic head 5 and to set up its temperature to a value more than the curie temperature of the 2nd magnetic film 4. Since the magnetic film 4 is turned to a nonmagnetic state and a magnetic field due to the magnetism of a 1st magnetic film 2 is leaked to the external, the information can be reproduced by a magnetic head 5. While nonmagnetizing the magnetic film 4 by supplying current to the heating body 7, the information can be similarly recorded. Consequently, information can be easily recorded/reproduced in/from a magnetic card.

2. 发明专利

JPS58151076A JOSEPHSON TUNNEL JUNCTION ELEMENT 失效
公开(公告)号：JPS58151076A
公开(公告)日：1983-09-08
申请号：JP3359582
申请日：1982-03-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGAWARA HIROSHI , TSUBOI SHIYUNGO , NOGUCHI TAKU
IPC分类号： H01L39/22
摘要： PURPOSE:To contrive the improvement of corrosion resistance without damaging the characteristic, by forming the electrode material of a Josephson tunnel junction element of a thin film laminated structure by adding Bi and Cr to Pb. CONSTITUTION:The lower electrode 2 of the Josephson tunnel junction element is provided on a substrate 1 by continuously depositing by evaporating Au to 4.5nm, Pb to 160nm and In to 35.5nm, and a tunnel barrier layer 4 is provided on an aperture part of an SiO2 deposited film 3, while the upper electrode 5 is formed by continuously depositing by evaporating Pb to 136nm, Bi to 128nm, Pb to 136nm and Cr to 30-100nm. The lower electrode is easily changed into an alloy at a room temperature or the temperature of approx. 80 deg.C, and the upper electrode is likewise diffused and changed into an alloy except for Cr. Besides, Cr is diffused to the lowermost part of the film, and accordingly the corrosion resistance is improved. On the other hand, the temperature of superconductive transition is decreased more or less by the Cr diffusion into Pb-Bi, however, there is no hindrance in using this junction element for a logic and memory circuit.

3. 发明专利

JPS5823391A JOSEPHSON MEMORY DEVICE 失效
公开(公告)号：JPS5823391A
公开(公告)日：1983-02-12
申请号：JP12209581
申请日：1981-08-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGAWARA HIROSHI
IPC分类号： G11C11/44 , H01L39/22 , H01L39/24 , H03K19/195
摘要： PURPOSE:To form a device through the use of a material high in superconduction transit temperature with simple process and to attain high speed operation, by adopting a current injection Josephson element construction as a driver switching gate. CONSTITUTION:The 1st electrode 25 constitutes a current supply loop line and the 2nd upper electrode 29 forms a current injection control line. After a thermo- oxidated silicon substrate 20 is heated to a temperature of 400 deg.C and a niobium nitride (NbN) film is formed on the entire substrate surface with the high frequency reaction sputtering method, a ground plane 21 and a lower electrode 23 are separately formed with the plasma etching in gaseous carbon tetrafluoride (CF4). After an isolation layer 24 is formed with an SiO evaportion film with the lift-off method and a tunnel barrier layer 26 is formed with the sputter oxidation method, and the 1st and 2nd upper electrodes 25 and 29 are simultaneously formed with a bismuth lead continuous evaporation film by the lift-off method.

4. 发明专利

JPS5798368A THIN FILM TYPE THERMAL HEAD 失效
公开(公告)号：JPS5798368A
公开(公告)日：1982-06-18
申请号：JP17604180
申请日：1980-12-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： UMEZAKI MITSUMASA , SUGAWARA HIROSHI
IPC分类号： H05B3/14 , B41J2/335 , C22C16/00 , H01C7/00 , H01L49/02
摘要： PURPOSE:To provide a thin film type thermal head for heat sensitive printing with high performance and recording stability even under large electric power at low cost by a head provided with a heat emitting resistor comprising a Zr- Al2O3 cermet film. CONSTITUTION:A thermal head provided with a heat emitting resistor comprising a Zr-Al2O3 cermet film. The Zr-Al2O3 cermet film is preferably formed by electron beam evaporation or low temperature sputtering. In practice, the thermal head comprises an alumina substrate 11, for example, which is formed thereon with a glazed layer 12, Zr-Al2O3 cermet heat emitting resistor layer 13, electrode layer 14, oxidation preventing film 15 and a wear-resistant layer 16.

5. 发明专利

JPS55113124A THINNFILM MAGNETIC RESISTANCE HEAD 失效
公开(公告)号：JPS55113124A
公开(公告)日：1980-09-01
申请号：JP1750179
申请日：1979-02-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGAWARA HIROSHI , KUZUMI HISATOSHI , UMEZAKI MITSUMASA
IPC分类号： G11B5/39 , G01R33/09
摘要： PURPOSE:To obtain a head of short shield gap length by making an adjustment to the best bias by feeding current through a conductive permanent magnet film while applying a constant bias magnetic filed to a magnetic resistance element by forming a bias film of the magnet film. CONSTITUTION:On glass substrate 1, lower magnetic shield film 2 and insulating film 3 are formed and on film 3, conductive film 12 and conductive permanent magnet film (e.g. Co-Ni alloy film) 13 are bonded. Next, after films 12 and 13 are etched by using a pattern, insulating film 5, magnetic resistance element 6, insulating film 7, and upper shield film 8 are provided on them to constitute a head. Although this head is applied with a constant bias by permanent magnet film 13, a bias-adjusting current is further flowed through conductive film 12 via connected current terminal 9, so that a bias magnetic field can be held in the best state.

6. 发明专利

JPS5541786A METHOD OF FORMING METAL IMAGE 失效
公开(公告)号：JPS5541786A
公开(公告)日：1980-03-24
申请号：JP11609278
申请日：1978-09-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： UMEZAKI MITSUMASA , SUGAWARA HIROSHI , OZEKI TATSUO , TOTSUTORI HIROSHI
IPC分类号： H01L21/306 , H01L21/302
摘要： PURPOSE:To provide the subject method comprising the steps of: providing partitions consisting of photoresists the intervals of which are defined on the substrate, applying metal films on the partitioned regions, and removing by etching metal films in the unnecessary partitions while masking the partitioned regions with the resists thereby to obtain a fine metal wiring. CONSTITUTION:If the substrate 1 is made of a material unable to be electroplated, a plated layer 2 which becomes a surface layer is firstly applied thereon, and there are formed thereon partitions 7 consisting of plating photoresist images having a width d of less than 10mum at an interval of l the same as the width t of the fine image 5 formed subsequently. Then, while the layer 2 encircled by partitions 7 is subjected to photoresist coat plating to form the metal film 3, the film 3 is divided into two parts 3a and 3b without adhering to the partitions 7. Thereafter, an etching photoresist image 8 containing the upper parts of partitions 7 at both sides are removed by etching using the image 8 as a mask. Then, the partitions 7 and the image 8 are removed, and only the fine image 5 having the width t being caused to remain at the central part.

7. 发明专利

JPS5424604A INFORMATION SIGNAL RECORDING CARRIER 失效
公开(公告)号：JPS5424604A
公开(公告)日：1979-02-24
申请号：JP9019177
申请日：1977-07-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGAWARA HIROSHI , KUBO TAKAHIRO , ISHII KENJI
IPC分类号： G11B7/243 , G02B27/00 , G03G5/00 , G11B23/00
摘要： PURPOSE:To improve SN ratio of recording discs of the type of emitting signals by making use of macroscopical differences in reflectance and make possible contribution to volume production by selectively heating and radiating a specific metal element vapor deposition film with light beams.

8. 发明专利

JPH0560168B2 失效
公开(公告)号：JPH0560168B2
公开(公告)日：1993-09-01
申请号：JP12408684
申请日：1984-06-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUTSUMI KAZUHIKO , SUGAWARA HIROSHI
IPC分类号： G11B5/66 , C23C14/06 , G11B5/64 , G11B5/667 , G11B5/73 , H01F10/18

9. 发明专利

JPS63306530A MAGNETIC CARD AND MAGNETIC CARD RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JPS63306530A
公开(公告)日：1988-12-14
申请号：JP14185987
申请日：1987-06-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： HANDA ICHIRO , SUGAWARA HIROSHI , KOMURA AKIRA
IPC分类号： C09D5/23 , C09D7/12 , G11B5/02 , G11B5/80 , G11B5/82
摘要： PURPOSE:To enable easy recording or reproducing of information by providing a 1st magnetic film and 2nd magnetic film on a substrate in such a manner that the 2nd magnetic film has low coercive force and high magnetic permeability at ordinary temp. and has the curie temp. lower than the Curie temp. of the 1st magnetic film. CONSTITUTION:The 2nd magnetic film 4 has the low coercive force and the high magnetic permeability at ordinary temp. and the Curie temp. thereof is lower than the Curie temp. of the 1st magnetic film 2. A main magnetic flux path is formed by the 1st and 2nd magnetic films when the 1st magnetic film 2 is in a magnetized state. The magnetic field generated from a magnetic head is absorbed in the 2nd magnetic film 4 in the case of recording information on a magnetic card by an ordinary magnetic head. The 2nd magnetic layer is heated by a heating mechanism so as to lose its magnetism, by which the information is recorded on the 1st magnetic film 2 or the information is reproduced from the magnetic card. The recording of the information on the magnetic card or the reproducing of the information from the magnetic card is thereby facilitated with the simple constitution.

10. 发明专利

JPS6295739A PRODUCTION OF MAGNETIC RECORDING MEDIUM 失效
公开(公告)号：JPS6295739A
公开(公告)日：1987-05-02
申请号：JP23811085
申请日：1985-10-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： DAI KAZUHIKO , SUGAWARA HIROSHI
IPC分类号： C23C14/20 , C30B28/12 , C30B29/52 , G11B5/85 , G11B5/851
摘要： PURPOSE:To obtain a smooth surface by applying a high-frequency bias voltage to a substrate and selectively resputtering a film grown on the projecting parts of the substrate in the stage of forming a high permeability magnetic film on the substrate by a sputtering method. CONSTITUTION:Ar is introduced into a vessel 8 to maintain a prescribed vacuum degree therein. A high-frequency voltage is impressed from a power source 3 to a target 1 to generated plasma and a high permeability Fe-Ni alloy film is formed on the Al alloy substrate 4 formed by subjecting the surface to an alumite treatment from Fe-Ni 2. Electrons from the plasma are accumulated in the substrate and the same state as the state in which a negative bias voltage is impressed is attained when the high-frequency voltage is impressed from a power source 6 to a substrate holder 5. The Ar ions in the plasma arrive at the substrate and balance near the substrate 4. The average negative DC bias is thus determined. The film grown on the projecting parts of the substrate is selectively resputtered by the Ar ions arriving at the substrate, by which the surface is smoothed and the vertical magnetic recording medium having a good surface characteristic is obtd. The spacing quantity between a magnetic head and the medium is decreased and the substantial reproduction voltage is obtd.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式