专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH0588433B2 失效
公开(公告)号：JPH0588433B2
公开(公告)日：1993-12-22
申请号：JP7171283
申请日：1983-04-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TAKU
IPC分类号： G01R33/035 , G01R33/02 , H01L39/22

2. 发明专利

JPH04132134A COLD CATHODE 失效
公开(公告)号：JPH04132134A
公开(公告)日：1992-05-06
申请号：JP24999090
申请日：1990-09-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TAKU , TAKAMI TETSUYA , KOJIMA KAZUYOSHI , KURODA KENICHI , TANIOKU MASAMI , HAMANAKA KOICHI
IPC分类号： H01J1/30 , H01J1/312
摘要： PURPOSE:To discharge a number of electrons which have uniform energy (speed) into a vacuum by using superconducting tunnel junction for a cold cathode. CONSTITUTION:The lower portion electrode 21 and the upper portion electrode 22 are super electroconduction bodies, and constitute superconducting tunnel junction that becomes a cold cathode (emitter) which conducts electron discharge together with a thin insulation film 3 that becomes a tunnel barrier. The condition density of the lower portion electrode consisting of a superconductor body becomes large emittingly in the vicinity of Fermi level, so a number of electrons with energy in the vicinity of Fermi level can be discharged into a vacuum. Also, as a layer structure is used for the emitter, the unevenness of the discharge characteristics of electrons from the emitter is little, and the accumulation of elements becomes possible. Electrons discharged into the vacuum are accelerated by means of a collector plate 5 that is positively biased.

3. 发明专利

JPH01241874A JOSEPHSON JUNCTION ELEMENT 失效
公开(公告)号：JPH01241874A
公开(公告)日：1989-09-26
申请号：JP7051888
申请日：1988-03-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAMI TETSUYA , NOGUCHI TAKU , HAMANAKA KOICHI , KOJIMA KAZUYOSHI , KURODA KENICHI , KANEMOTO KYOZO
IPC分类号： H01L39/22 , C30B23/02 , C30B29/22
摘要： PURPOSE:To miniaturize an element and to perform an integration by epitaxially growing oxide superconductor having an oxygen defective triple perovskite structure on a single crystalline substrate in which a face having different planar orientation from other part is presented on its part, and forming a superconduction weak coupling on the part having different planar orientation. CONSTITUTION:A step is formed on an SrTiO3 single crystalline substrate 2 in a plane (100), and a surface in a plane (110) is presented on the stepped part. An oxide superconductor YBaCuO film 1 having an oxygen defective triple perovskite structure is epitaxially grown on the substrate, the film 1 is etched and patterned in the face of the substrate 2, thereby presenting a Josephson junction element. The matching of a lattice occurs on the stepped part on the substrate 2 and the coherence length of YBaCuO is short 4.4-37Angstrom . Accordingly, its superconductivity is weakened at the mismatched part to form a weak coupling.

4. 发明专利

JPH01101679A FORMATION OF SUPERCONDUCTING CIRCUIT 失效
公开(公告)号：JPH01101679A
公开(公告)日：1989-04-19
申请号：JP26038987
申请日：1987-10-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAMI TETSUYA , NOGUCHI TAKU , OOKAWA KUNIO , KOJIMA KAZUYOSHI , KANEMOTO KYOZO , TSUKADA NORIAKI
IPC分类号： H01L21/3205 , H01L23/52 , H01L39/24
摘要： PURPOSE:To simplify the process and to reduce costs of a device by reducing oxygen in an oxide superconductive thin film and causing such superconductive thin film to lose its superconductivity while increasing its oxygen defects. CONSTITUTION:A flat superconducting circuit is obtained by causing a superconductive thin film 2 to lose by means of an hydrogen plasma 4 using a photoresist 3 as a mask. Hence, the hydrogen plasma 4 is of an oxygen deficient triple perovskite structure having many oxygen defects by reducing the oxygen in the oxide superconducting thin film 2 having a K2NiF4 structure, and it causes the oxide superconducting thin film 2 to lose the superconductivity. According to the constitution, a flat superconducting circuit can be obtained with a simple process as well as at low costs.

5. 发明专利

JPS6329985A SUPERCONDUCTING RECTIFIER 失效
公开(公告)号：JPS6329985A
公开(公告)日：1988-02-08
申请号：JP17181186
申请日：1986-07-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TAKU
IPC分类号： H02M7/04 , H01L39/22 , H02M7/00 , H03D1/00 , H03K17/92
摘要： PURPOSE:To obtain a superconducting rectifier capable of operating at a low temperature such as liquid helium temperature by using at least one control line magnetically connected to a Josephson device, and applying a d.c. current and an a.c. input signal to the control line. CONSTITUTION:When a constant d.c. current IB flows from a terminal 12 to a Josephson device 10, a voltage V appears across the Josephson device 10. Now suppose that a control current IC1 flows through a control line 1 to magnetically bias the Josephson device 10 (the bias current IB is kept to flow through the Josephson device 10), and that an a.c. current is delivered to a control line 2. Both currents are mathematically added together to apply a magnetic field to the Josephson device 10. After d.c. components are removed by a blocking capacitor 5, the output voltage is further smoothed by a smoothing circuit 11 and a d.c. voltage is obtained. With this, a rectifier which is capable of operating at a very low temperature and has a remarkably small thermal noise effect and a high resolution can be obtained.

6. 发明专利

JPS61284679A SUPERCONDUCTIVE QUANTUM INTERFERENCE DEVICE 失效
公开(公告)号：JPS61284679A
公开(公告)日：1986-12-15
申请号：JP12518985
申请日：1985-06-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TAKU , OOKAWA NORIO
IPC分类号： G01R33/035
摘要： PURPOSE:To improve resolution by connecting plural superconductive quantum interference elements in series and connecting respective input coils in series. CONSTITUTION:When it is assumed that a voltage DELTAV is developed at a superconductive quantum interference element S1 by flowing a current I to an input coil 3A1, a voltage DELTAV is developed at respective elements 3A1, 3A2-3AN by flowing the current I to a set 3A of N series connection type input coils. Therefore, N.DELTAV is developed across all the elements Si and an output voltage which is N times as high as the signal current flowing through the coil 3A is obtained, so that the resolution is improved.

7. 发明专利

JPS61166204A BIAS POWER SUPPLY DEVICE FOR SUPERCONDUCTION TUNNEL JUNCTION MIXER 失效
公开(公告)号：JPS61166204A
公开(公告)日：1986-07-26
申请号：JP789985
申请日：1985-01-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TAKU
IPC分类号： H03D7/04 , H01L39/22
摘要： PURPOSE:To prevent a high frequency being an RF band or over from giving to a superconduction tunel junction mixer through an earth by providing an optical coupling means between a DC current and the superconduction tunnel junction mixer and separating the earth line of the pre-stage and post-stage circuit of the optical coupling means. CONSTITUTION:A light emitting diode 14 and a photodiode 15 form an optical coupling means whose input/output are isolated electrically completely. Thus, the earth line of the electric circuit at the left side (pre-stage) from the light emitting diode 14 and the earth line of the electric circuit at the right side (post-stage) from the photodiode 15 are separated, and in applying a radio wave shield 21 to the circuit at the right side from the light emitting diode 14, a spurious high frequency mixed in the light emitting diode 14 from the DC power supply 11 given to the superconduction tunnel junction mixer through the earth line is prevented. Further, the high frequency being the highest transfer frequency or over of the optical coupling means 13 cannot pass through the optical coupling means 13 and is rejected from the power supply line.

8. 发明专利

JPH02297026A SUPERCONDUCTIVE INFRARED-RAY DETECTOR 失效
公开(公告)号：JPH02297026A
公开(公告)日：1990-12-07
申请号：JP11741989
申请日：1989-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAMI TETSUYA , NOGUCHI TAKU , HAMANAKA KOICHI
IPC分类号： G01J1/00 , H01L31/0264 , H01L39/22
摘要： PURPOSE:To reduce the absorption of an incident light to a substrate and to improve the response speed by covering an infrared-ray detection area in which an oxide superconductive thin film is formed on a substrate and each part on the substrate except a formed electrode with a reflector whose reflection factor of infrared rays is high. CONSTITUTION:An infrared-ray detecting area is a part in which an oxide superconductive thin film 2 of the center part of a substrate 1 forms a zigzag pattern, and when infrared rays are allowed to be made incident on this part, infrared rays which are made incident on other part than the infrared-ray detecting area are reflected by a metallic thin film 4 consisting of a material whose reflection factor in an infrared-ray area of Au, etc., is high, therefore, the infrared rays are not absorbed to the substrate 1. Therefore, since only the infrared rays which are made incident on only the inside of the infrared-ray detecting area excite quasi-particles in the oxide superconductive thin film 2, intensity of infrared rays is detected, and a thermal response is reduced. As a result, infrared rays absorbed to the substrate are reduced, and such an effect as a response speed becomes high is obtained.

9. 发明专利

JPH02113585A JOSEPHSON ELEMENT 失效
公开(公告)号：JPH02113585A
公开(公告)日：1990-04-25
申请号：JP26650688
申请日：1988-10-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAMI TETSUYA , NOGUCHI TAKU , KOJIMA KAZUYOSHI , HAMANAKA KOICHI
IPC分类号： H01L39/22
摘要： PURPOSE:To extend the length of a feeble coupling part, making any fine processing needless and reducing the variability of an element by a method wherein a hetero-structure of semiconductor is used in the feeble coupling part of a Josephson element. CONSTITUTION:A hetero structure is formed by depositing a carrier feeding layer 2 comprising AlGaAs doped with Si, Sn, etc., on a GaAs substrate successively depositing a conductive channel 4 comprising GaAs on the carrier feeding layer 2 and then further depositing the carrier feeding layer 2 comprising AlGaAs again. Later, after forming a ridge structure to be a feeble coupling part, superconducting electrodes 3 comprising Nb are formed on both sides of the ridge structure. When locked up in a conductive channel 4 due to the band structure in the hetero structural part, electrons not subjected to the scattering effect by impurities are provided with high mobility and notable coherence length thereby enabling the length L of the feeble coupling part to exceed a specified value. Through these procedures, any fine processing can be made needless while enabling the variability of elements to be reduced.

10. 发明专利

JPH01161789A FORMATION OF JOSEPHSON JUNCTION 失效
公开(公告)号：JPH01161789A
公开(公告)日：1989-06-26
申请号：JP32217387
申请日：1987-12-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAMI TETSUYA , NOGUCHI TAKU
IPC分类号： H01L39/24
摘要： PURPOSE:To enable thickness of a bridge section in a Josephson junction device to be thinned with ease and good control by means of a system which provides high mass production and has a simple structure, by a method wherein an oxide superconducting film which is masked except a bridge section is exposed to hydrogen plasma, and thereby the surface layer of the exposed bridge section of the oxide superconducting film is chemically reduced. CONSTITUTION:An oxide superconducting film 2 is formed between electrodes in a pattern of a bridge type Josephson device having a bridge which is connected between the electrodes, and the resulting oxide superconducting film 2 is then covered with a mask 3, excepting a bridge section 2c. Subsequently, the oxide superconducting film 2 covered with the mask 3 is exposed to hydrogen plasma and thereby the exposed bridge section 2c of the oxide superconducting film 2 is for the surface layer 5 chemically reduced. Thus, a bridge type Josephson junction is produced. For example, after an Y-Ba-Cu-O-type oxide superconducting film 2 is formed on a substrate 1 of MgO, the superconducting film 2 is processed into a bridge type Josephson device pattern by means of an etching technique. Next, a photoresist 3 is coated allover on the substrate body and an opening section is then formed only in the position corresponding to a bridge section 2c. Therefore, when the masked oxide superconducting film 2 is exposed to hydrogen plasma 4, the surface layer 5 of the bridge section 2c is chemically reduced to be an insulating film.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式