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1. 发明申请

WO2006128018A2 DEVICE AND METHOD FOR THE REDUCTION OF PARTICLES IN THE THERMAL TREATMENT OF ROTATING SUBSTRATES 审中-公开
标题翻译：用于减少旋转基板热处理颗粒的装置和方法
公开(公告)号：WO2006128018A2
公开(公告)日：2006-11-30
申请号：PCT/US2006/020497
申请日：2006-05-25
申请人： MATTSON TECHNOLOGY, INC. , ASCHNER, Helmut , SCHMID, Patrick , THEILER, Thomas , HEUDORFER, Ottmar
发明人： ASCHNER, Helmut , SCHMID, Patrick , THEILER, Thomas , HEUDORFER, Ottmar
IPC分类号： A61B17/02
CPC分类号： H01L21/67115 , F27B5/04 , F27B17/0025 , F27D5/0037 , H01L21/324 , H01L21/6719 , H01L21/68792
摘要： A device and a method for reducing particle exposure to substrates during thermal treatment are disclosed. Semiconductor wafers may be rotated on a device within a process chamber divided into two partial chambers such that a first partial chamber contains the substrate to be thermally treated and a second partial chamber contains at least parts of the rotation device. Between the partial chambers, a flow of gas is set such that gas from the second partial chamber is substantially prevented from passing into the first partial chamber. In this way, particles which are produced by rotation abrasion in the second partial chamber are largely prevented from passing onto the substrate to be thermally treated. This device and this method are particularly advantageous if the rotation is realized by means of a gas drive, wherein the gas used for the rotation can be introduced directly into the second partial chamber.
摘要翻译：公开了一种用于在热处理期间减少颗粒暴露于基板的装置和方法。半导体晶片可以在分成两个部分室的处理室内的装置上旋转，使得第一部分室包含待热处理的基板，并且第二部分室至少包含旋转装置的一部分。在部分室之间，设置气流，使得基本上防止来自第二部分室的气体进入第一部分室。以这种方式，通过第二部分室中的旋转磨损产生的颗粒被大大地防止被传递到待热处理的基板上。如果通过气体驱动实现旋转，则该装置和该方法是特别有利的，其中用于旋转的气体可以直接引入第二部分室。

2. 发明申请

WO2006015620A1 METHOD FOR THE THERMAL TREATMENT OF DISK-SHAPED SUBSTRATES 审中-公开
标题翻译：盘形基板热处理方法
公开(公告)号：WO2006015620A1
公开(公告)日：2006-02-16
申请号：PCT/EP2004/012181
申请日：2004-10-28
申请人： MATTSON THERMAL PRODUCTS GMBH , NENYEI, Zsolt , FRIGGE, Steffen , SCHMID, Patrick , HÜLSMANN, Thorsten , THEILER, Thomas
发明人： NENYEI, Zsolt , FRIGGE, Steffen , SCHMID, Patrick , HÜLSMANN, Thorsten , THEILER, Thomas
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , F27B5/04 , F27B17/0025 , H01L21/67115
摘要： For the purposes of reducing the number of particles on substrates and especially on semiconductor wafers which are being thermally treated, there is provided a method for the thermal treatment of the substrate in at least one process chamber, wherein the substrate is heated in a first process step to a temperature which is greater than that of the immediate environment whilst being kept static, and wherein the substrate continues to be heated in a second process step and is additionally set in motion. Furthermore, it is possible for a gas not to be introduced into the process chamber during the first process step, whereas a gas is introduced in the second process step.
摘要翻译：为了减少基板上，特别是在被热处理的半导体晶片上的颗粒数量，提供了一种用于在至少一个处理室中对基板进行热处理的方法，其中基板在第一工艺中被加热在保持静止的情况下步进到大于直接环境的温度，并且其中基板在第二工艺步骤中继续被加热并且另外设置成运动。此外，在第一工艺步骤期间，不能将气体引入处理室，而在第二工艺步骤中引入气体。

3. 发明申请

WO2009109896A1 APPARATUS FOR THE HEAT TREATMENT OF DISC SHAPED SUBSTRATES 审中-公开
标题翻译：用于处理盘形基板的装置
公开(公告)号：WO2009109896A1
公开(公告)日：2009-09-11
申请号：PCT/IB2009/050828
申请日：2009-03-02
申请人： MATTSON TECHNOLOGY, INC. , DIETL, Walter , SCHMID, Patrick , JAGER, Eddy
发明人： DIETL, Walter , SCHMID, Patrick , JAGER, Eddy
IPC分类号： H01L21/00 , C23C16/455
CPC分类号： H01L21/67115 , H01L21/67017
摘要： The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Further¬ more, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes. The collar ring surrounds the hole region and has at least one inlet opening. The first gas conveyance duct has an outlet which is aligned with the inlet opening of the collar ring, a gas flow flowing out of the outlet having a main flow direction which is directed past a centre point of the collar ring.
摘要翻译：本申请涉及用于盘形基底，特别是半导体晶片的热处理的装置。所述设备具有至少一个辐射源和处理室，其容纳具有上壁元件和下壁元件的基底，所述壁元件中的至少一个位于与所述至少一个辐射源相邻并且对于辐射来说基本上是透明的辐射源。此外，该装置提供至少第一气体入口装置。第一气体入口装置具有设置在基板和上壁元件之间的处理室内的板元件，设置在板元件和上壁元件之间的套环，以及至少部分地延伸到第一气体输送管道治疗室。板元件具有比基板更大的直径，并且在大致对应于基板的直径的孔区域中具有多个通孔。轴环围绕孔区域并且具有至少一个入口开口。第一气体输送管道具有与套环的入口开口对准的出口，从出口流出的气流具有被引导通过套环的中心点的主流动方向。

4. 发明申请

WO2008124477A1 METHOD AND SYSTEM FOR THERMALLY PROCESSING A PLURALITY OF WAFER-SHAPED OBJECTS 审中-公开
标题翻译：用于热处理多晶圆形物体的方法和系统
公开(公告)号：WO2008124477A1
公开(公告)日：2008-10-16
申请号：PCT/US2008/059228
申请日：2008-04-03
申请人： MATTSON TECHNOLOGY, INC. , NENYEI, Zsolt , TIMANS, Paul, Janis , LERCH, Wilfried , NIESS, Juergen , FALTER, Manfred , O'CARROLL, Conor, Patrick , CARDEMA, Rudy , FIDELMAN, Igor , TAY, Sing-Pin , HU, Yao Zhi , DEVINE, Daniel, J. , SCHMID, Patrick
发明人： NENYEI, Zsolt , TIMANS, Paul, Janis , LERCH, Wilfried , NIESS, Juergen , FALTER, Manfred , O'CARROLL, Conor, Patrick , CARDEMA, Rudy , FIDELMAN, Igor , TAY, Sing-Pin , HU, Yao Zhi , DEVINE, Daniel, J. , SCHMID, Patrick
IPC分类号： H01L21/324
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

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